SANYO SCH2308

SCH2308
Ordering number : ENA1217
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
SCH2308
General-Purpose Switching Device
Applications
Features
•
•
•
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Low ON-resistance.
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
Unit
VDSS
VGSS
--30
±10
V
V
ID
--200
mA
mA
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
--800
Allowable Power Dissipation
PD
When mounted on ceramic substrate (900mm 2✕0.8mm) 1unit
0.65
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Symbol
V(BR)DSS
IDSS
Conditions
ID=--1mA, VGS=0V
Ratings
min
typ
Unit
max
--30
V
VDS=--30V, VGS=0V
--1
μA
±10
μA
IGSS
VGS(off)
VGS=±8V, VDS=0V
VDS=--10V, ID=--100μA
--0.4
Forward Transfer Admittance
⏐yfs⏐
RDS(on)1
VDS=--10V, ID=--100mA
190
ID=--100mA, VGS=--4V
1.8
2.4
Ω
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
ID=--50mA, VGS=--2.5V
2.4
3.4
Ω
ID=--10mA, VGS=--1.5V
4.5
9.0
Ω
Cutoff Voltage
Marking : MH
--1.4
320
V
mS
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52808PE TI IM TC-00001377 No. A1217-1/4
SCH2308
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
min
typ
Unit
max
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
35
pF
7.2
pF
2.1
pF
See specified Test Circuit.
75
ns
See specified Test Circuit.
170
ns
See specified Test Circuit.
550
ns
See specified Test Circuit.
350
ns
0.58
nC
0.17
nC
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--200mA
VDS=--10V, VGS=--4V, ID=--200mA
VDS=--10V, VGS=--4V, ID=--200mA
Diode Forward Voltage
VSD
IS=--200mA, VGS=0V
Package Dimensions
Ratings
Conditions
0.12
--0.89
nC
--1.2
V
Electrical Connection
unit : mm (typ)
7028-006
6
5
4
1
2
3
1.6
0.2
1.5
1
2
3
0.5
0.25
0.56
0.05
1.6
0.05
0.2
6 5 4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : SCH6
Switching Time Test Circuit
VDD= --15V
VIN
0V
--4V
ID= --100mA
RL=150Ω
VOUT
VIN
D
PW=10μs
D.C.≤1%
G
P.G
Rg
SCH2308
50Ω
S
Rg=5kΩ
No. A1217-2/4
SCH2308
--80
V
VGS= --1.5
--60
--40
75°C
Ta= -25°C
--150
--100
Ta=
75°
C
--25
°C
--100
VDS= --10V
--200
25
°C
--120
--250
Drain Current, ID -- mA
--140
--2
--8.0
V
Drain Current, ID -- mA
--160
.0V
--2
.5V
--6.0
V --5.0
V --4.0
V
--180
ID -- VGS
--300
25°
C
ID -- VDS
--200
--50
--20
0
0
--0.1
0
--0.2
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
--0.9
0
--1.0
--1.5
--2.0
--2.5
Gate-to-Source Voltage, VGS -- V
RDS(on) -- VGS
10
--1.0
--0.5
IT11698
--3.0
IT11699
RDS(on) -- Ta
7
9
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Ta=25°C
8
ID= --100mA
7
--50mA
6
--10mA
5
4
3
2
6
, I D=
--1.5V
V GS=
5
A
--10m
4
A
--50m
V, I D=
3
--2.5
V GS=
00mA
I = --1
--4.0V, D
V GS=
2
1
1
0
--4
--5
--6
--7
Gate-to-Source Voltage, VGS -- V
3
-25
=a
T
°C
C
5°
7
100
7
°C
25
5
3
20
40
60
80
100
120
140
160
IT11701
IS -- VSD
VGS=0V
3
2
--100
7
5
3
2
--10
7
5
3
2
2
10
--1.0
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Drain Current, ID -- mA
5 7--1000
IT11702
0
--0.2
--0.4
Ciss, Coss, Crss -- pF
tf
3
2
tr
--1.2
--1.4
IT11703
f=1MHz
5
5
--1.0
7
Ciss
1000
td (off)
--0.8
Ciss, Coss, Crss -- VDS
100
VDS= --15V
VGS= --4V
7
--0.6
Diode Forward Voltage, VSD -- V
SW Time -- ID
2
Switching Time, SW Time -- ns
0
--1000
7
5
5
2
--20
Ambient Temperature, Ta -- °C
Source Current, IS -- mA
Forward Transfer Admittance, ⏐yfs⏐ -- mS
VDS= --10V
7
--40
IT11700
⏐yfs⏐ -- ID
1000
0
--60
--8
--25
°C
--3
25°C
--2
5°C
--1
Ta=
7
0
3
2
10
Coss
7
5
3
100
td(on)
Crss
2
7
5
--10
1.0
2
3
5
7
--100
2
Drain Current, ID -- mA
3
5
7
IT11704
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT11705
No. A1217-3/4
SCH2308
VGS -- Qg
--3.5
--1.0
7
5
--3.0
--2.5
--2.0
--1.5
3
2
IDP= --800mA
PW≤10μs
1m
10
ID= --200mA
DC
--0.1
7
5
s
ms
10
0m
op
s
era
tio
Ta
=
Operation in this
area is limited by RDS(on).
3
2
n(
25
°C
)
--0.01
7
5
--1.0
3
2
--0.5
0
0
0.1
0.2
0.3
0.4
0.5
Total Gate Charge, Qg -- nC
0.6
0.7
IT11706
PD -- Ta
0.7
Allowable Power Dissipation, PD -- W
ASO
2
VDS= --10V
ID= --200mA
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--4.0
Ta=25°C
Single pulse
When mounted on ceramic substrate (900mm2✕0.8mm) 1unit
--0.001
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Drain-to-Source Voltage, VDS -- V
3
5
IT13696
When mounted on ceramic substrate
(900mm2✕0.8mm) 1unit
0.65
0.6
0.5
0.4
0.3
0.2
0.1
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13697
Note on usage : Since the SCH2308 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
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without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
PS No. A1217-4/4