SANYO SFT1302

SFT1302
Ordering number : ENA1178
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
SFT1302
General-Purpose Switching Device
Applications
Features
•
•
•
Motor drive application.
Low ON-resistance.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10μs)
Symbol
Conditions
Ratings
VDSS
VGSS
Unit
--35
ID
IDP
PW≤10μs, duty cycle≤1%
V
±20
V
--11
A
--44
A
1.0
W
Allowable Power Dissipation
PD
15
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Tc=25°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
Conditions
Ratings
min
typ
V(BR)DSS
IDSS
IGSS
ID=--1mA, VGS=0V
VDS=--35V, VGS=0V
VGS=±16V, VDS=0V
--35
VGS(off)
⏐yfs⏐
VDS=--10V, ID=--1mA
--1.2
VDS=--10V, ID=--5.5A
5.2
Marking : T1302
Unit
max
V
--1
μA
±10
μA
--2.6
V
8.7
S
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
www.semiconductor-sanyo.com/network
60309PA MS IM TC-00001157 No. A1178-1/4
SFT1302
Continued from preceding page.
Parameter
Symbol
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--5.5A, VGS=--10V
ID=--5.5A, VGS=--4.5V
Input Capacitance
RDS(on)3
Ciss
Output Capacitance
Coss
ID=--5.5A, VGS=--4V
VDS=--20V, f=1MHz
VDS=--20V, f=1MHz
Ratings
Conditions
min
typ
Unit
max
39
51
mΩ
55
77
mΩ
65
91
mΩ
1240
pF
185
pF
pF
Reverse Transfer Capacitance
Crss
td(on)
VDS=--20V, f=1MHz
See specified Test Circuit.
140
Turn-ON Delay Time
14
ns
Rise Time
tr
See specified Test Circuit.
100
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
95
ns
Fall Time
tf
See specified Test Circuit.
75
ns
Total Gate Charge
Qg
24
nC
Gate-to-Source Charge
Qgs
VDS=--17V, VGS=--10V, ID=--11A
VDS=--17V, VGS=--10V, ID=--11A
3.5
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--17V, VGS=--10V, ID=--11A
IS=--11A, VGS=0V
5.2
--0.95
Package Dimensions
Package Dimensions
unit : mm (typ)
7518-004
unit : mm(typ)
7003-004
0.5
0.6
1
2
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.3
2
3
0 to 0.2
0.6
0.5
3
2.5
0.8
1
7.5
0.8
1.6
0.85
1.2
SANYO : TP
1.2
5.5
0.85
0.7
0.5
1.5
1.5
4
7.0
5.5
4
2.3
6.5
5.0
0.5
V
7.0
2.3
6.5
5.0
nC
--1.5
1.2
2.3
2.3
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Switching Time Test Circuit
VDD= --17V
VIN
ID= --5.5A
RL=3.1Ω
0V
--10V
VOUT
D
VIN
PW=10μs
D.C.≤1%
G
P.G
50Ω
SFT1302
S
No. A1178-2/4
SFT1302
ID -- VDS
.0V
ID -- VGS
VDS= --10V
--15
--14
--7
--6
--3.0V
--5
--4
--3
--13
--12
--11
--10
--9
--8
--7
--6
--5
25° --25°
C
C
V
--3.5
--16
.
--8
--4
--16
Drain Current, ID -- A
--9
--17
--4
.5
V
0V --10.0
V
--10
Drain Current, ID -- A
--8
.
--6 0V
.0V
--11
--3
--2
--1
--1
0
0
--0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Drain-to-Source Voltage, VDS -- V
0
--1.0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
100
80
60
40
20
--2
--4
--6
--8
--10
--12
Gate-to-Source Voltage, VGS -- V
C
5°
--2
=
Ta
°C
75
2
1.0
7
5
3
--4.0
IT13578
60
40
20
--40
--20
0
20
40
60
80
100
120
140
160
IT13580
IS -- VSD
VGS=0V
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
2
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
Drain Current, ID -- A
2
--0.01
--0.2
3
--0.4
--0.6
--0.8
--1.2
--1.4
IT12582
Ciss, Coss, Crss -- VDS
3
VDD= --20V
VGS= --10V
f=1MHz
2
Ciss
Ciss, Coss, Crss -- pF
td(off)
100
7
tf
5
3
tr
2
1000
7
5
3
Coss
2
Crss
td(on)
10
7
--0.1
--1.0
Diode Forward Voltage, VSD -- V
IT13581
SW Time -- ID
3
2
--3.5
--10
7
5
5
3
--3.0
A
5.5
= -I
D
,
4V
= -.5A
V GS
= --5
I
D
,
.5V
= --4
VGS
A
= --5.5
V, I D
0
1
-V GS=
80
3
2
°C
25
7
--2.5
Case Temperature, Tc -- °C
⏐yfs⏐ -- ID
10
--2.0
100
IT13579
VDS= --10V
0.1
--0.01
Switching Time, SW Time -- ns
--16
Source Current, IS -- A
Forward Transfer Admittance, ⏐yfs⏐ -- S
2
--14
--1.5
RDS(on) -- Tc
0
--60
0
0
--1.0
Gate-to-Source Voltage, VGS -- V
120
Ta=25°C
ID= --5.5A
120
--0.5
IT13577
RDS(on) -- VGS
140
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
--0.9
--25°C
--0.2
25°C
--0.1
Ta=7
5°C
0
3
Ta
=7
5°
C
--4
VGS= --2.5V
--2
100
7
2
3
5
7 --1.0
2
3
5
Drain Current, ID -- A
7 --10
2
3
IT13583
0
--5
--10
--15
--20
--25
--30
Drain-to-Source Voltage, VDS -- V
--35
IT13584
No. A1178-3/4
SFT1302
VGS -- Qg
--10
--9
--8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--100
7
5
3
2
VDS= --20V
ID= --11A
--7
--6
--5
--4
--3
--2
--1
0
0
5
10
15
20
Total Gate Charge, Qg -- nC
--0.1
7
5
3
2
Operation in this
area is limited by RDS(on).
Tc=25°C
Single pulse
5 7--0.1
sin
k
0.4
0.2
0
2 3
5 7--1.0
2 3
5 7 --10
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
he
at
--1.0
7
5
3
2
5 7
IT13586
PD -- Tc
20
0.8
No
ID= --11A
IT13585
1.0
0.6
PW≤10μs
10
1m 0μs
s
1
10 0ms
0m
DC
s
op
era
tio
n
--10
7
5
3
2
--0.01
--0.01 2 3
PD -- Ta
1.2
Allowable Power Dissipation, PD -- W
25
ASO
IDP= --44A
15
10
5
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT13587
0
20
40
60
80
100
120
140
Case Temperature, Tc -- °C
160
IT13588
Note on usage : Since the SFT1302 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
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limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
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intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
This catalog provides information as of June, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1178-4/4