SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION ·With TO-3 package ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS 2N5621 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N5623/5625 Open emitter -100 2N5627 -120 2N5621 -60 2N5623/5625 Emitter-base voltage UNIT -80 Open base 2N5627 VEBO VALUE -80 V V -100 Open collector -5 V -10 A 100 W IC Collector current PD Total power dissipation Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.5 UNIT /W SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2N5621 VCEO(SUS) Collector-emitter sustaining voltage 2N5623/5625 TYP. MAX UNIT -60 IC=-50mA ;IB=0 V -80 -100 2N5627 VCEsat MIN Collector-emitter saturation voltage IC=-10A; IB=-1A -1.5 V VBE Base-emitter on voltage IC=-5A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 -0.1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA 2N5621/5625 hFE fT 70 200 2N5623/5627 30 90 2N5621/5625 40 DC current gain IC=-5A ; VCE=-5V Transition frequency IC=-1A ; VCE=-12V 2N5623/5627 MHz 30 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 PACKAGE OUTLINE Fig.2 outline dimensions 3