SEMIKRON SKM50GB12V

SKM50GB12V
Absolute Maximum Ratings
Symbol
Conditions
Values
Unit
IGBT
VCES
IC
Tj = 175 °C
1200
V
Tc = 25 °C
79
A
Tc = 80 °C
60
A
50
A
ICnom
ICRM
SEMITRANS® 2
ICRM = 3xICnom
150
A
-20 ... 20
V
10
µs
-40 ... 175
°C
Tc = 25 °C
65
A
Tc = 80 °C
49
A
50
A
VGES
tpsc
VCC = 720 V
VGE ≤ 15 V
VCES ≤ 1200 V
Tj = 125 °C
Tj
Inverse diode
IF
SKM50GB12V
Tj = 175 °C
IFnom
Target Data
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
IFRM
IFRM = 3xIFnom
150
A
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
270
A
-40 ... 175
°C
Tj
Module
It(RMS)
Tstg
Visol
AC sinus 50Hz, t = 1 min
200
A
-40 ... 125
°C
4000
V
Characteristics
Symbol
typ.
max.
Unit
Tj = 25 °C
1.85
2.3
V
Tj = 150 °C
2.2
2.65
V
VCE0
Tj = 25 °C
0.94
1.25
V
Tj = 150 °C
0.88
1.22
V
rCE
Tj = 25 °C
18.2
21.0
mΩ
26.4
28.6
mΩ
6.5
7
V
0.1
0.3
mA
Typical Applications*
IGBT
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
VCE(sat)
Conditions
IC = 50 A
VGE = 15 V
chiplevel
VGE = 15 V
VGE(th)
VGE=VCE, IC = 2 mA
ICES
VGE = 0 V
VCE = 1200 V
Cies
Coes
Cres
VCE = 25 V
VGE = 0 V
min.
Tj = 150 °C
6
Tj = 25 °C
Tj = 150 °C
3
nF
f = 1 MHz
0.30
nF
f = 1 MHz
0.295
nF
540
nC
QG
RGint
td(on)
tr
Eon
td(off)
tf
Ω
4.0
VCC = 600 V
IC = 50 A
VGE = ±15 V
RG on = 13 Ω
RG off = 13 Ω
Tj = 150 °C
ns
Tj = 150 °C
Tj = 150 °C
ns
5
mJ
Tj = 150 °C
ns
Tj = 150 °C
ns
Tj = 150 °C
Eoff
Rth(j-c)
mA
f = 1 MHz
per IGBT
4
mJ
0.53
K/W
GB
© by SEMIKRON
Rev. 0 – 23.12.2009
1
SKM50GB12V
Characteristics
Symbol
SEMITRANS® 2
Conditions
min.
typ.
max.
Unit
Tj = 25 °C
2.2
2.5
V
Tj = 150 °C
2.2
2.5
V
Tj = 25 °C
1.3
1.5
V
Inverse diode
VF = VEC IF = 50 A
VGE = 0 V
chip
VF0
Tj = 150 °C
0.9
1.1
V
rF
Tj = 25 °C
18.4
20.8
mΩ
Tj = 150 °C
IF = 50 A
Tj = 150 °C
di/dtoff = 1380 A/µs T = 150 °C
j
VGE = ±15 V
T
j = 150 °C
VCC = 600 V
per diode
25.6
28.0
mΩ
TC = 25 °C
0.65
mΩ
TC = 125 °C
1
mΩ
IRRM
Qrr
Err
Rth(j-c)
35
A
8.7
µC
3.6
mJ
0.84
K/W
Module
SKM50GB12V
LCE
Target Data
RCC'+EE'
Features
• VCE(sat) with positive temperature
coefficient
• High short circuit capability, self
limiting to 6 x Icnom
• Fast & soft inverse CAL diodes
• Large clearance (10 mm) and
creepage distances (20 mm)
• Isolated copper baseplate using DBC
Technology (Direct Copper Bonding)
• UL recognized, file no. E63532
30
terminal-chip
Rth(c-s)
per module
Ms
to heat sink M6
Mt
0.04
to terminals M5
0.05
nH
K/W
3
5
Nm
2.5
5
Nm
Nm
w
160
g
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders at fsw up to 20 kHz
GB
2
Rev. 0 – 23.12.2009
© by SEMIKRON
SKM50GB12V
SEMITRANS 2
GB
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX
* The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested
for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is
subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal.
© by SEMIKRON
Rev. 0 – 23.12.2009
3