STMICROELECTRONICS 2N7000G

2N7000
2N7002
N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92
STripFET™ Power MOSFET
General features
Type
VDSS
RDS(on)
ID
2N7000
60V
<5Ω (@10V)
0.35
2N7002
60V
<5Ω (@10V)
0.20
3
2
1
■
Low Qg
■
Low threshold drive
SOT23-3L
TO-92
Description
This MOSFET is the second generation of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Internal schematic diagram
Applications
■
Switching application
SOT23-3L
TO-92
Order codes
Part number
Marking
Package
Packaging
2N7000
2N7000G
TO-92
Bulk
2N7002
STN2
SOT23-3L
Tape & reel
June 2006
Rev 7
1/14
www.st.com
14
Contents
2N7000 - 2N7002
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
................................................ 9
2N7000 - 2N7002
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
TO-92
VDS
VDGR
VGS
ID
IDM
(1)
PTOT
Unit
SOT23-3L
Drain-source voltage (VGS = 0)
60
V
Drain-gate voltage (RGS = 20 kΩ)
60
V
± 18
V
Gate- source voltage
Drain current (continuous) at TC = 25°C
0.35
0.20
A
Drain current (pulsed)
1.4
1
A
1
0.35
W
TO-92
SOT23-3L
125
357.1 (1)
Total dissipation at TC = 25°C
1. Pulse width limited by safe operating area
Table 2.
Rthj-amb
TJ
Tstg
1.
Thermal data
Thermal resistance junction-ambient max
°C/W
Operating junction temperature
- 55 to 150
°C
Storage temperature
When mounted on 1inch² FR-4, 2 Oz copper board.
3/14
Electrical characteristics
2
2N7000 - 2N7002
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
V(BR)DSS
Drain-source
breakdown voltage
ID = 250µA, VGS =0
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = max rating
VDS = max rating,
TC = 125°C
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 18V
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 0.5A
VGS = 4.5V, ID = 0.5A
Table 4.
Symbol
Test conditions
Typ.
Max.
60
1
Unit
V
1
10
µA
µA
±100
nA
2.1
3
V
1.8
2
5
5.3
Ω
Ω
Typ.
Max.
Unit
Dynamic
Parameter
Test conditions
Min.
gfs (1)
Forward
transconductance
VDS = 10V , ID = 0.5A
0.6
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1MHz,
VGS = 0
43
20
6
pF
pF
pF
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 30V, ID = 0.5A
RG = 4.7Ω VGS = 4.5V
(see Figure 15)
5
15
7
8
ns
ns
ns
ns
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 30V, ID = 1A,
VGS = 5V
(see Figure 16)
1.4
0.8
0.5
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
4/14
Min.
2
nC
nC
nC
2N7000 - 2N7002
Table 5.
Symbol
Electrical characteristics
Source drain diode
Parameter
ISDM (1)
Source-drain current
Source-drain current
(pulsed)
VSD (2)
Forward on voltage
ISD
trr
Qrr
IRRM
Test conditions
Min.
Typ.
ISD = 1A, VGS = 0
Reverse recovery time
ISD = 1A, di/dt = 100A/µs,
Reverse recovery charge VDD = 20V, Tj = 150°C
Reverse recovery current (see Figure 17)
32
25
1.6
Max.
Unit
0.35
1.40
A
A
1.2
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
5/14
Electrical characteristics
2N7000 - 2N7002
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area for TO-92
Figure 2.
Thermal impedance for TO-92
Figure 3.
Safe operating area for SOT23-3L
Figure 4.
Thermal impedance for SOT23-3L
Figure 5.
Output characterisics
Figure 6.
Transfer characteristics
6/14
2N7000 - 2N7002
Electrical characteristics
Figure 7.
Transconductance
Figure 9.
Gate charge vs gate-source voltage Figure 10. Capacitance variations
Figure 11. Normalized gate threshold voltage
vs temperature
Figure 8.
Static drain-source on resistance
Figure 12. Normalized on resistance vs
temperature
7/14
Electrical characteristics
Figure 13. Source-drain diode forward
characteristics
8/14
2N7000 - 2N7002
Figure 14. Normalized BVDSS vs temperature
2N7000 - 2N7002
3
Test circuit
Test circuit
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
Figure 18. Unclamped Inductive load test
switching and diode recovery times
circuit
Figure 19. Unclamped inductive waveform
Figure 20. Switching time waveform
9/14
Package mechanical data
4
2N7000 - 2N7002
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
10/14
2N7000 - 2N7002
Package mechanical data
TO-92 MECHANICAL DATA
mm.
inch
DIM.
MAX.
MIN.
A
4.32
MIN.
TYP
4.95
0.170
TYP.
0.194
MAX.
b
0.36
0.51
0.014
0.020
D
4.45
4.95
0.175
0.194
E
3.30
3.94
0.130
0.155
e
2.41
2.67
0.094
0.105
e1
1.14
1.40
0.044
0.055
L
12.70
15.49
0.50
0.610
R
2.16
2.41
0.085
0.094
S1
0.92
1.52
0.036
0.060
W
0.41
0.56
0.016
0.022
V
5°
5°
11/14
Package mechanical data
2N7000 - 2N7002
SOT23-3L MECHANICAL DATA
mm.
mils
DIM.
MIN.
TYP
MAX.
MIN.
TYP.
MAX.
A
0.890
1.120
35.05
44.12
A1
0.010
0.100
0.39
3.94
A2
0.880
1.020
34.65
0.950
37.41
40.17
b
0.300
0.500
11.81
19.69
C
0.080
0.200
3.15
7.88
D
2.800
3.040
110.26
E
2.100
2.64
82.70
E1
1.200
1.400
47.26
2.900
1.300
114.17
103.96
51.19
e
0.950
37.41
e1
1.900
74.82
L
0.400
0.600
L1
119.72
15.75
55.13
23.63
0.540
21.27
k
8°
8°
D
GAUGE
PLANE
e
L
E
E1
L1
0.25
b
c
C
e1
0.10
SEATING
PLANE
A
A2
C
A1
7110469/A
12/14
2N7000 - 2N7002
5
Revision history
Revision history
Table 6.
Document revision history
Date
Revision
Changes
09-Oct-2004
1
First document
22-Jun-2004
2
Complete document
06-Apr-2005
3
New typ and max value inserted for Vgs(th)
19-Apr-2005
4
New stylesheet
26-Apr-2005
5
New Pin Configuration for TO-92
28-Apr-2005
6
Pin configuration change again
19-Jun-2006
7
New template, no content change
13/14
2N7000 - 2N7002
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