STMICROELECTRONICS 2ST5949

2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■
High breakdown voltage VCEO = 250 V
■
Complementary to 2ST2121
■
Fast-switching speed
■
Typical ft = 25 MHz
■
Fully characterized at 125 oC
1
Applications
■
2
Audio power amplifier
TO-3
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
2ST5949
2ST5949
TO-3
tray
July 2008
Rev 3
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www.st.com
8
2ST5949
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Value
Unit
VCBO
Collector-base voltage (IE = 0)
250
V
VCEO
Collector-emitter voltage (IB = 0)
250
V
VEBO
Emitter-base voltage (IC = 0)
6
V
Collector current
17
A
Collector peak current (tP < 5ms)
34
A
PTOT
Total dissipation at Tc = 25°C
250
W
Tstg
Storage temperature
-65 to 200
°C
200
°C
Value
Unit
0.7
°C/W
IC
ICM
TJ
Table 3.
Symbol
Rthj-case
2/8
Parameter
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case
______________ __max
2ST5949
2
Electrical characteristics
Electrical characteristics
(Tcase = 25°C; unless otherwise specified)
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 250 V
5
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6 V
5
µA
Collector-emitter breakdown
V(BR)CEO(1) voltage (I = 0)
B
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = 50 mA
IC = 100 µA
Emitter-base breakdown voltage
IE = 1 mA
V(BR)EBO(1) (I = 0)
C
VCE(sat) (1)
VBE (1)
hFE
fT
250
V
250
V
6
V
Collector-emitter saturation
voltage
IC = 8 A
IB = 800 mA
Base-emitter on voltage
IC = 7 A
VCE = 5 V
IC = 1 A
V CE = 5 V
80
IC = 7 A
V CE = 5 V
35
IC = 1 A
V CE = 5 V
DC current gain
Transition frequency
3
V
1.5
V
160
25
MHz
1. Pulsed duration = 300 µs, duty cycle ≤1.5%
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2ST5949
Electrical characteristics
2.1
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Electrical characteristics (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
Figure 4.
Output characteristics
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation
voltage
Figure 7.
Base-emitter on voltage
2ST5949
3
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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2ST5949
Package mechanical data
TO-3 mechanical data
mm.
DIM.
min.
typ
max.
A
11.00
13.10
B
0.97
1.15
C
1.50
1.65
D
8.32
8.92
E
19.00
20.00
G
10.70
11.10
N
16.50
17.20
P
25.00
26.00
R
4.00
4.09
U
38.50
39.30
V
30.00
30.30
0015923C
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2ST5949
4
Revision history
Revision history
Table 5.
Document revision history
Date
Revision
Changes
05-Dec-2007
1
Initial release.
05-May-2008
2
New graphics. Updated figure 7 and maximum operating junction
temperature value.
11-Jul-2008
3
Updated figure 7 and maximum operating junction temperature value.
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2ST5949
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