STMICROELECTRONICS 2STW1693

2STW1693
High power PNP epitaxial planar bipolar transistor
Features
■
High breakdown voltage VCEO = -80 V
■
Complementary to 2STW4466
■
Typical ft = 20 MHz
■
Fully characterized at 125 oC
Applications
■
3
2
Audio power amplifier
1
TO-247
Description
The device is a PNP transistor manufactured in
low voltage planar technology using base island
layout. The resulting transistor shows good gain
linearity coupled with low VCE(sat) behaviour.
Recommended for 40W to 70W high fidelity audio
frequency amplifier output stage.
Table 1.
Figure 1.
Internal schematic diagram
Device summary
Order code
Marking
Package
Packaging
2STW1693
2STW1693
TO-247
Tube
October 2008
Rev 2
1/9
www.st.com
9
2STW1693
Electrical ratings
1
Electrical ratings
Table 2.
Absolute maximum rating
Symbol
Value
Unit
VCBO
Collector-base voltage (IE = 0)
-100
V
VCEO
Collector-emitter voltage (IB = 0)
-80
V
VEBO
Emitter-base voltage (IC = 0)
-6
V
Collector current
-6
A
Collector peak current (tP < 5 ms)
-12
A
PTOT
Total dissipation at Tc = 25 °C
60
W
Tstg
Storage temperature
-65 to 150
°C
150
°C
Value
Unit
2.08
°C/W
IC
ICM
TJ
Table 3.
Symbol
Rthj-case
2/9
Parameter
Max. operating junction temperature
Thermal data
Parameter
Thermal resistance junction-case _____________max
2STW1693
2
Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4.
Electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = -100 V
-0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = -6 V
-0.1
µA
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = -1 mA
V(BR)CBO
Collector-base breakdown
voltage (IE = 0)
IC = -100 µA
V(BR)CEO
Collector-emitter breakdown
IC = -50 mA
voltage (IB = 0)
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = -2 A
IB = -200 mA
IC = -6 A
IB = -600 mA
-0.6
-1.5
V
V
Base-emitter voltage
VCE = -4 V
IC = -6 A
-1.5
V
DC current gain
IC = -2 A
VCE = -4 V
Transition frequency
IC = -0.5 A
VCE = -12 V
20
MHz
Collector-base capacitance
(IE = 0)
VCB = -10 V
f = 1 MHz
80
pF
0.18
ns
0.6
ns
0.09
ns
VBE (1)
hFE
fT
CCBO
-6
V
-100
V
-80
V
50
120
Resistive load
ton
Turn-on time
IC = -3 A
tstg
Storage time
IB1 = -IB2 = -0.3 A
tf
Fall time
VCC = -30 V
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
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2STW1693
Electrical characteristics
2.1
4/9
Electrical characteristics (curves)
Figure 2.
DC current gain
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation
voltage
Figure 5.
Base-emitter saturation
voltage
Figure 6.
Base-emitter voltage
Figure 7.
Resistive load switching time
(on)
2STW1693
Electrical characteristics
Figure 8.
Resistive load switching time Figure 9.
(off)
Collector-base and emitterbase capacitance
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Package mechanical data
3
2STW1693
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
available at: www.st.com
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2STW1693
Package mechanical data
TO-247 Mechanical data
mm.
Dim.
A
Min.
4.85
A1
2.20
Typ
Max.
5.15
2.60
b
1.0
1.40
b1
2.0
2.40
b2
3.0
3.40
c
0.40
0.80
D
19.85
20.15
E
15.45
15.75
e
5.45
L
14.20
L1
3.70
L2
14.80
4.30
18.50
øP
3.55
3.65
øR
4.50
5.50
S
5.50
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2STW1693
Revision history
4
Revision history
Table 5.
8/9
Document revision history
Date
Revision
Changes
10-Oct-2007
1
Initial release
02-Oct-2008
2
Content reworked to improve readability, no technical changes.
2STW1693
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