BD135 BD139 ® NPN SILICON TRANSISTORS Type ■ Marking BD135 BD135 BD135-10 BD135-10 BD135-16 BD135-16 BD139 BD139 BD139-10 BD139-10 BD139-16 BD139-16 STMicroelectronics PREFERRED SALESTYPES DESCRIPTION The BD135 and BD139 are silicon Epitaxial Planar NPN transistors mounted in Jedec SOT-32 plastic package, designed for audio amplifiers and drivers utilizing complementary or quasi-complementary circuits. The complementary PNP types are BD136 and BD140 respectively. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value BD135 Unit BD139 V CBO Collector-Base Voltage (I E = 0) 45 80 V V CEO Collector-Emitter Voltage (I B = 0) 45 80 V V EBO Emitter-Base Voltage (I C = 0) IC I CM Collector Current Collector Peak Current V A 3 A 0.5 A P tot Total Dissipation at T c ≤ 25 o C 12.5 W P tot Total Dissipation at T amb ≤ 25 o C Storage Temperature 1.25 IB T stg Tj Base Current 5 1.5 Max. Operating Junction Temperature September 2001 W -65 to 150 o C 150 o C 1/4 BD135 / BD139 THERMAL DATA R thj-case Thermal Resistance Junction-case Max o 10 C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions I CBO Collector Cut-off Current (I E = 0) V CB = 30 V V CB = 30 V I EBO Emitter Cut-off Current (I C = 0) V EB = 5 V V CEO(sus) ∗ Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) ∗ T C = 125 o C I C = 30 mA for BD135 for BD139 Typ. Max. Unit 0.1 10 µA µA 10 µA 45 80 V V Collector-Emitter Saturation Voltage I C = 0.5 A I B = 0.05 A 0.5 V V BE ∗ Base-Emitter Voltage I C = 0.5 A V CE = 2 V 1 V h FE ∗ DC Current Gain I C = 5 mA I C = 150 mA I C = 0.5 A V CE = 2 V V CE = 2 V V CE = 2 V h FE h FE Groups I C = 150 mA VCE = 2 V for BD135/BD139 group-10 for BD135/BD139 group-16 * Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area 2/4 Min. 25 40 25 250 63 100 160 250 BD135 / BD139 SOT-32 (TO-126) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 7.4 7.8 0.291 0.307 B 10.5 10.8 0.413 0.425 b 0.7 0.9 0.028 0.035 b1 0.40 0.65 0.015 0.025 C 2.4 2.7 0.094 0.106 c1 1.0 1.3 0.039 0.051 D 15.4 16.0 0.606 0.630 e 2.2 0.087 e3 4.4 0.173 F G 3.8 3 0.150 3.2 H 0.118 0.126 2.54 0.100 H2 2.15 0.084 I 1.27 0.05 O 0.3 0.011 V o 10 10o 1: Base 2: Collector 3: Emitter 0016114/B 3/4 BD135 / BD139 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics © 2001 STMicroelectronics – Printed in Italy – All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4