STMICROELECTRONICS BUL138_01

BUL138
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125oC
APPLICATIONS
■ ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■ FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUL138 is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability. It
uses a Cellular Emitter structure with planar edge
termination to enhance switching speeds.
The BUL series is designed for use in lighting
applications and low cost switch-mode power
supplies.
3
1
2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CES
Collector-Emitter Voltage (V BE = 0)
800
V
V CEO
Collector-Emitter Voltage (I B = 0)
400
V
V EBO
Emitter-Base Voltage (I C = 0)
9
V
IC
I CM
IB
Collector Current
Collector Peak Current (t p < 5 ms)
Base Current
5
A
10
A
2
A
I BM
Base Peak Current (t p < 5 ms)
4
A
P tot
Total Dissipation at T c = 25 o C
80
W
T stg
Storage Temperature
Tj
June 2001
Max. Operating Junction Temperature
-65 to 150
o
C
150
o
C
1/6
BUL138
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
1.56
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 800 V
V CE = 800 V
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 400 V
Collector-Emitter
Sustaining Voltage
I C = 100 mA
Emitter-Base Voltage
I E = 10 mA
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
IC
VCEO(sus)
V EBO
V CE(sat) ∗
V BE(sat) ∗
=
=
=
=
=
1
2
3
4
5
A
A
A
A
A
Typ.
T j = 125 o C
L = 25 mH
IB
IB
IB
IB
IB
=
=
=
=
=
250
µA
V
0.5
0.7
1
1
V
V
V
V
V
1.1
1.3
1.5
V
V
V
0.7
I B = 0.2 A
I B = 0.4 A
I B = 0.6 A
DC Current Gain
IC = 2 A
I C = 10 mA
V CE = 5 V
V CE = 5 V
RESISTIVE LOAD
Storage Time
IC = 2 A
V CC = 250 V
I B1 = -I B2 = 0.4 A
ts
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
V BE(off) = -5 V
V CL = 250 V
I B1 = 0.4 A
R BB = 0 Ω
L = 200 µH
0.7
50
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2 A
V BE(off) = -5V
V CL = 250 V
T j = 125 o C
I B1 = 0.4 A
R BB = 0 Ω
L = 200 µH
1
75
Derating Curve
µA
µA
9
IC = 1 A
IC = 2 A
IC = 3 A
Safe Operating Areas
Unit
100
500
V
0.2 A
0.4 A
0.6 A
1A
1A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Max.
400
Base-Emitter
Saturation Voltage
h FE ∗
2/6
Min.
8
10
40
2.4
3.5
µs
1.4
100
µs
ns
µs
ns
BUL138
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Inductive Fall Time
Inductive Storage Time
3/6
BUL138
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuits
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
4/6
BUL138
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
L2
L4
16.40
13.00
0.409
0.645
14.00
0.511
0.551
0.116
L5
2.65
2.95
0.104
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
0.154
3.85
0.147
M
DIA.
2.60
3.75
0.102
0.151
P011CI
5/6
BUL138
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2001 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com
6/6