STD4LNK60Z STF4LNK60Z N-channel 600 V, 2.2 Ω, 3.3 A, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID Pw STD4LNK60Z 600 V < 2.7 Ω 3.3 A 70 W STF4LNK60Z 600 V < 2.7 Ω 3.3 A 25 W 3 3 ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Improved ESD capability 1 TO-220FP Application ■ Figure 1. 1 2 DPAK Internal schematic diagram Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST’s full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Table 1. Device summary Order codes Marking Package Packaging STD4LNK60Z 4LNK60Z DPAK Tape and reel STF4LNK60Z 4LNK60Z TO-220FP Tube July 2008 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/11 www.st.com 11 Contents STD4LNK60Z - STF4LNK60Z Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 .............................................. 6 STD4LNK60Z - STF4LNK60Z 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220FP DPAK VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 3.3 (1) 3.3 A ID Drain current (continuous) at TC = 100 °C 2 (1) 2 A 13.2(1) 13.2 A Total dissipation at TC = 25 °C 25 70 W Derating factor 0.2 0.56 W/°C 2500 -- V IDM PTOT VISO Tj Tstg Drain current (pulsed) Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Operating junction temperature Storage temperature -55 to 150 °C 1. Limited by package Table 3. Thermal data Value Symbol Parameter Unit TO-220FP DPAK Rthj-case Thermal resistance junction-case 5 1.79 °C/W Rthj-pcb Thermal resistance junction-pcb(1) -- 50 °C/W Rthj-amb Thermal resistance junction-amb 62.5 -- °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit 1. Minimum footprint Table 4. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) TBD A EAS Single pulse avalanche energy (1) TBD mJ 1. Starting Tj = 25 °C, ID = IAR, VDD = 50 V 3/11 Electrical characteristics 2 STD4LNK60Z - STF4LNK60Z Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ± 30 V VGS(th) Gate threshold voltage VDS= VGS, ID = 50 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 2.7 A Symbol Ciss Coss Crss Coss eq. Qg Qgs Qgd Table 7. Symbol td(on) tr td(off) tf Min. Typ. Max. 600 1 50 µA µA ±100 nA 3 4 V 2.2 2.7 Ω Typ. Max. Unit VDS = Max rating,Tc=125 °C 2 Unit V VDS = Max rating, IDSS Table 6. 4/11 On/off states Dynamic Parameter Test conditions Min. Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 400 50 10 pF pF pF Equivalent output capacitance VDS = 0 to 480 V, VGS =0 44.4 pF VDD= 480 V, ID = 3.3 A 14 TBD TBD nC nC nC Total gate charge Gate-source charge Gate-drain charge VGS = 10 V (see Figure 3) Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD= 300 V, ID= 3.3 A, RG=4.7 Ω, VGS=10 V (see Figure 2) VDD=300 V, ID= 3.3 A, RG=4.7 Ω, VGS= 10 V (see Figure 2) Min. Typ. Max. Unit 7.5 19.5 ns ns 28 24 ns ns STD4LNK60Z - STF4LNK60Z Table 8. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM Electrical characteristics Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward on voltage ISD= 3.3 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 3.3 A, di/dt = 100 A/µs, VDD=480 V, Tj=150°C (see Figure 7) TBD TBD TBD Max. Unit 3.3 13.2 A A TBD V ns nC A 1. Pulse width limited by package 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/11 Test circuits STD4LNK60Z - STF4LNK60Z 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform 6/11 Figure 3. Figure 7. Gate charge test circuit STD4LNK60Z - STF4LNK60Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/11 Package mechanical data STD4LNK60Z - STF4LNK60Z TO-220FP mechanical data mm. Dim. Min. A 4.40 inch Typ Max. Min. 4.60 0.173 Typ. 0.181 Max. B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.017 0.027 F 0.75 1.00 0.030 0.039 F1 1.15 1.50 0.045 0.067 F2 1.15 1.50 0.045 0.067 G 4.95 5.20 0.195 0.204 G1 2.40 2.70 0.094 0.106 H 10 10.40 0.393 L2 16 0.409 0.630 28.6 30.6 1.126 L4 9.80 10.60 0.385 1.204 0.417 L5 2.9 3.6 0.114 0.141 L6 15.90 16.40 0.626 0.645 L7 9 9.30 0.354 0.366 Dia 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 Dia F F1 L7 L2 L5 1 2 3 L4 7012510-I 8/11 STD4LNK60Z - STF4LNK60Z Package mechanical data TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 9/11 Revision history 5 STD4LNK60Z - STF4LNK60Z Revision history Table 9. 10/11 Document revision history Date Revision 24-Jul-2008 1 Changes Initial release. STD4LNK60Z - STF4LNK60Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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