STN851 Low voltage fast-switching NPN power transistor Features ■ Very low collector to emitter saturation voltage ■ High current gain characteristic ■ Fast-switching speed 4 Applications 1 ■ Emergency lighting ■ Voltage regulators ■ Relay drivers ■ High efficiency low voltage switching applications 2 3 SOT-223 Figure 1. Internal schematic diagram Description The device is manufactured in Planar Technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Table 1. Device summary Order code Marking Package Packaging STN851 N851 SOT-223 Tape and reel March 2009 Rev 7 1/10 www.st.com 10 Electrical ratings 1 STN851 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Unit VCBO Collector-base voltage (IE = 0) 150 V VCEO Collector-emitter voltage (IB = 0) 60 V VEBO Emitter-base voltage (IC = 0) 7 V Collector current 5 A Collector peak current (tP < 5 ms) 10 A Base current 1 A IBM Base peak current (tP < 5 ms) 2 A Ptot Total dissipation at Tamb = 25 °C 1.6 W Tstg Storage temperature -65 to 150 °C 150 °C Value Unit 78 °C/W IC ICM IB TJ Table 3. Symbol Rthj-amb Max. operating junction temperature Thermal data Parameter Thermal resistance junction-ambient (1) 1. Device mounted on a p.c.b. area of 1 cm2 2/10 Value STN851 2 Electrical characteristics Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol Electrical characteristics Parameter Test conditions Min. Typ. Max. Unit VCB = 120 V Tc = 100 C 50 1 nA µA 10 nA VCB = 120 V ICBO Collector cut-off current (IE = 0) IEBO Emitter cut-off current (IC = 0) VEB = 7 V Collector-base breakdown voltage (IE = 0) IC = 100 µA 150 V Collector-emitter V(BR)CEO(1) breakdown voltage (IB = 0) IC = 10 mA 60 V IE = 100 µA 7 V V(BR)CBO V(BR)EBO VCE(sat) (1) Emitter-base breakdown voltage (IC = 0) Collector-emitter saturation voltage o IC = 100 mA IB = 5 mA IC = 1 A_ _ IB = 50 mA IC = 2 A IB = 50 mA IC = 5 A_ _ IB = 200 mA 10 70 140 320 1 1.15 V 0.89 1 V VBE(sat) (1) Base-emitter saturation voltage IC = 4 A_ _ IB = 200 mA VBE(on) (1) Base-emitter on voltage IC = 4 A_ _ VCE = 1 V IC = 10 mA IC = 2 A_ _ VCE = 1 V VCE = 1 V IC = 5 A VCE = 1 V hFE (1) DC current gain IC = 10 A _ VCE = 1 V 150 150 90 30 300 270 140 50 50 120 250 500 mV mV mV mV 350 fT Transition frequency VCE = 10 V IC = 100 mA 130 MHz CCBO Collector-base capacitance (IE = 0) VCB = 10 V f = 1 MHz 50 pF VCC = 10 V 50 ns 1.35 µs 120 ns Resistive load ton Turn-on time IC = 1 A ts Storage time IB1 = -IB2 = 0.1 A tf Fall time 1. Pulse duration = 300 µs, duty cycle ≤ 1.5% 3/10 Electrical characteristics STN851 2.1 Electrical characteristics (curves) Figure 2. Derating curve Figure 3. DC current gain Figure 4. Collector-emitter saturation voltage Figure 5. Collector-emitter saturation voltage Figure 6. Base-emitter saturation voltage Figure 7. Base-emitter on voltage 4/10 STN851 Figure 8. Electrical characteristics Resistive load switching time Figure 10. Resistive load switching time Figure 9. Resistive load switching time Figure 11. Inductive load switching time Figure 12. Inductive load switching time 5/10 Electrical characteristics 2.2 Test circuit Figure 13. Resistive load switching test circuit 1) Fast electronic switch 2) Non-inductive resistor 6/10 STN851 STN851 3 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and products status are available at: www.st.com. ECOPACK is an ST trademark. 7/10 Package mechanical data STN851 SOT-223 mechanical data mm. DIM. min. typ A max. 1.80 A1 0.02 0.1 B 0.60 0.70 0.85 B1 2.90 3.00 3.15 c 0.24 0.26 0.35 D 6.30 6.50 6.70 e 2.30 e1 4.60 E 3.30 3.50 3.70 H 6.70 7.00 7.30 V 10 o 0046067_L 8/10 STN851 4 Revision history Revision history Table 5. Document revision history Date Revision 09-Sep-2003 6 16-Mar-2009 7 Changes Updated SOT-223 mechanical data 9/10 STN851 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS “AUTOMOTIVE GRADE” MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10