STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET Features Type VDSS RDS(on) max ID Pw STF7NK30Z 300 V < 0.9 Ω 5A 20 W STP7NK30Z 300 V < 0.9 Ω 5A 50 W STD7NK30Z 300 V < 0.9 Ω 5A 50 W ■ 100% avalanche tested ■ Extremely high dv/dt capability 3 3 1 1 2 2 TO-220 TO-220FP 3 1 ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability DPAK Applications ■ Figure 1. Internal schematic diagram Switching application Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products Table 1. Device summary Order codes Marking Package Packaging STD7NK30Z D7NK30Z DPAK Tape and reel STF7NK30Z F7NK30Z TO-220FP Tube STP7NK30Z P7NK30Z TO-220 Tube March 2009 Rev 5 1/15 www.st.com 15 Electrical ratings 1 STx7NK30Z Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit TO-220, DPAK TO-220FP VDS Drain-source voltage (VGS = 0) 300 V VGS Gate- source voltage ± 30 V ID ID IDM (2) PTOT 5 5 (1) A 3.2 3.2 (1) A Drain current (pulsed) 20 (1) A Total dissipation at TC = 25 °C 50 20 W Derating factor 0.4 0.16 W/°C Drain current (continuous) at TC = 25 °C Drain current (continuous) at TC = 100 °C 20 VESD(G-S) Gate source ESD(HBM-C=100 pF, R=1.5 kΩ) 2800 V dv/dt (3) Peak diode recovery voltage slope 4.5 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) Tj Tstg Operating junction temperature Storage temperature 2500 -55 to 150 V V 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD ≤ 5.7 A, di/dt ≤ 200 A/µs, VDD =80% V(BR)DSS. Table 3. Absolute maximum ratings Value Symbol Parameter Rthj-case Thermal resistance junction-case Max TO-220FP 2.50 6.25 V Rthj-amb Thermal resistance junction-ambient Max 62.5 V Tl Maximum lead temperature for soldering purpose 300 A Table 4. 2/15 Unit TO-220, DPAK Absolute maximum ratings Symbol Parameter Value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 5 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 130 mJ STx7NK30Z 2 Electrical characteristics Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Table 6. Symbol gfs (1) Ciss Coss Crss Coss eq. (2) Qg Qgs Qgd On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID =1 mA, VGS = 0 Min. Typ. Max. Unit 300 V VDS=max rating VDS=max rating @125 °C 1 50 µA µA VGS = ± 20 V ±10 µA 3.75 4.5 V 0.80 0.90 Ω Typ. Max. Unit VDS = VGS, ID = 50 µA 3 VGS = 10 V, ID = 2.5 A Dynamic Parameter Test conditions Min. Forward transconductance VDS =15 V, ID = 2.5 A 2.5 Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1MHz, VGS = 0 380 74 15 Equivalent output capacitance VGS = 0, VDS = 0 to 240 V 30 Total gate charge Gate-source charge Gate-drain charge VDD = 240 V, ID = 7 A, VGS = 10 V Figure 16 13 4.5 7.6 S pF pF pF pF 17 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. 3/15 Electrical characteristics Table 7. Symbol STx7NK30Z Switching times Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 150 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V Figure 15 11 25 20 10 ns ns ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 240 V, ID = 7 A, RG = 4.7 Ω, VGS = 10 V Figure 15 8.5 8.5 20 ns ns ns Table 8. Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Source Drain Diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Forward On voltage ISD = 5 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/µs VDD = 40 V, Tj = 150 °C Figure 20 Max. Unit 5 20 A A 1.6 V 154 716 9.3 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Table 9. Symbol BVGSO(1) Gate-source Zener diode Parameter Gate-source breakdown voltage Test conditions Igs=± 1mA (open drain) Min. Typ. Max. Unit 30 1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components 4/15 V STx7NK30Z Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP Figure 6. Output characteristics Figure 7. Transfer characteristics 5/15 Electrical characteristics Figure 8. Static drain source on resistance STx7NK30Z Figure 9. Normalized BVDSS vs temperature Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations Figure 12. Normalized gate threshold voltage vs temperature 6/15 Figure 13. Normalized on resistance vs temperature STx7NK30Z Electrical characteristics Figure 14. Source-drain diode forward characteristics 7/15 Test circuits 3 STx7NK30Z Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 17. Test circuit for inductive load Figure 18. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 19. Unclamped inductive waveform AM01471v1 Figure 20. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/15 0 10% AM01473v1 STx7NK30Z 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 9/15 Package mechanical data STx7NK30Z TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 10/15 Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 STx7NK30Z Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 11/15 Package mechanical data STx7NK30Z TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 12/15 STx7NK30Z 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 13/15 Revision history 6 STx7NK30Z Revision history Table 10. 14/15 Revision history Date Revision Changes 10-May-2005 1 New stylesheet 05-Sep-2005 2 Inserted Ecopack indication 04-Jan-2006 3 Some values changed on table 8. 22-Mar-2006 4 Inserted DPAK 05-Mar-2009 5 Section 4: Package mechanical data has been updated STx7NK30Z Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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