STV250N55F3 N-channel 55 V, 1.5 mΩ, 250 A, PowerSO-10 STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STV250N55F3 55 V < 2.2 mΩ 250 A 10 1 ■ Conduction losses reduced ■ Low profile, very low parasitic inductance PowerSO-10 Application ■ Switching applications Figure 1. Description Internal schematic diagram and connection diagram (top view) This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge. Table 1. Device summary Order code Marking Package Packaging STV250N55F3 250N55F3 PowerSO-10 Tape and reel March 2009 Rev 4 1/12 www.st.com 12 Contents STV250N55F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STV250N55F3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 55 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 250 A ID Drain current (continuous) at TC = 100 °C 175 A Drain current (pulsed) 1000 A Total dissipation at TC = 25 °C 300 W Derating factor 2.0 W/°C 1 J -55 to 175 °C Value Unit IDM (1) PTOT (2) EAS (3) Tstg Tj Single pulse avalanche energy Storage temperature Operating junction temperature 1. Pulse width limited by safe operating area 2. This value is rated according to Rthj-c 3. Starting Tj = 25 °C, ID = 60 A, VDD = 35 V Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max. 0.5 °C/W Rthj-pcb(1) Thermal resistance junction-pcb max. 50 °C/W 1. When mounted on 1 inch2 FR-4 2 oz Cu 3/12 Electrical characteristics 2 STV250N55F3 Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS = 0 IDSS VDS = Max rating, Zero gate voltage drain current (VGS = 0) VDS = Max rating, Tc = 125 °C IGSS Gate body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance Symbol Ciss Coss Crss Qg Qgs Qgd Min. Typ. Max. 55 1 10 µA µA ±100 nA 4 V 1.5 2.2 mΩ Typ. Max. Unit 2 VGS = 10 V, ID = 75 A Unit V VDS = ± 20 V VGS(th) Table 5. 4/12 On /off states Dynamic Parameter Test conditions Min. Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 6800 1450 15 pF pF pF Total gate charge Gate-source charge Gate-drain charge VDD = 44 V, ID = 120 A, VGS = 10 V Figure 14 100 30 26 nC nC nC STV250N55F3 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr Turn-on delay time Rise time VDD = 27.5 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V, Figure 13 25 150 ns ns td(off) tf Turn-off delay time Fall time VDD = 27.5 V, ID = 60 A RG = 4.7 Ω, VGS = 10 V, Figure 13 110 50 ns ns Table 7. Source drain diode Symbol Parameter ISD ISD (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 120 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120 A, di/dt = 100 A/µs VDD = 35 V, Tj = 150 °C Figure 18 trr Qrr IRRM Test conditions Min. Typ. 60 110 3.5 Max. Unit 250 1000 A A 1.5 V ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 5/12 Electrical characteristics STV250N55F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area ID (A) 100 Figure 3. Thermal impedance AM03164v1 ea 280tok K is δ=0.5 ar (on S is th RD in ax n m o ti y ra d b pe O mite i L ) 0.2 100µs 0.1 1ms 10 0.05 -1 10 0.02 10ms Tj=175°C 1 Zth=k Rthj-c δ=tp/τ 0.01 Tc=25°C Sinlge pulse τ 10 1 10 -5 10 VDS(V) Output characteristics VGS=10V 400 -1 10 10 tp (s) AM03166v1 VDS=5V 400 7V 6V 350 300 250 250 200 200 150 150 100 100 5V Figure 6. -2 -3 10 Transfer characteristics ID (A) 300 50 0 0 -4 10 Figure 5. AM03165v1 ID (A) 350 tp -2 0.1 0.1 Figure 4. Single pulse 50 2 0 4 6 VDS(V) Normalized BVDSS vs temperature 0 Figure 7. RDS(on) (Ω) 1 3 2 4 5 6 7 8 9 VGS(V) Static drain-source on resistance AM03167v1 VGS=10V 3.0 2.5 2.0 1.5 1.0 0.5 0 6/12 100 200 300 400 ID(A) STV250N55F3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/12 Test circuits 3 STV250N55F3 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STV250N55F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 9/12 Package mechanical data STV250N55F3 PowerSO-10 mechanical data mm Dim Min A A1 A2 A3 b c D D1 E E1 E2 E3 e L < Typ Max 3.70 0.10 3.60 1.35 0.53 0.55 9.60 7.60 14.40 9.50 7.60 6.10 0.00 3.40 1.25 0.40 0.35 9.40 7.40 13.80 9.30 7.20 5.90 1.27 0.95 0o 1.65 8o 0068039_E 10/12 STV250N55F3 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 25-Oct-2007 1 Initial release 20-Mar-2008 2 Content reworked to improve readability, no technical changes. 10-Nov-2008 3 Document status promoted from preliminary data to datasheet. 02-Mar-2009 4 Figure 2 has been updated. 11/12 STV250N55F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12