STW45NM50FD N-channel 500 V, 0.07 Ω, 45 A, TO-247 FDmesh™ Power MOSFET (with fast diode) Features Type VDSS RDS(on) max ID STW45NM50FD 500 V < 0.1 Ω 45 A ■ 100% avalanche tested ■ High dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3 1 TO-247 Application ■ Switching applications Figure 1. Description Internal schematic diagram The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. $ ' 3 !-V Table 1. Device summary Order code Marking Package Packaging STW45NM50FD W45NM50FD TO-247 Tube July 2009 Doc ID 7955 Rev 10 1/12 www.st.com 12 Contents STW45NM50FD Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 7955 Rev 10 STW45NM50FD 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 45 A ID Drain current (continuous) at TC=100 °C 28.4 A Drain current (pulsed) 180 A Total dissipation at TC = 25 °C 417 W Derating factor 2.08 W/°C 20 V/ns -65 to 150 °C Value Unit 0.3 °C/W Thermal resistance junction-ambient max 30 °C/W Maximum lead temperature for soldering purpose 300 °C Value Unit IDM (1) PTOT dv/dt(2) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 45 A, di/dt ≤ 400 A/µs, VDD = 80%V(BR)DSS Table 3. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max Rthj-a Tl Table 4. Symbol Avalanche data Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 22.5 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 800 mJ Doc ID 7955 Rev 10 3/12 Electrical characteristics 2 STW45NM50FD Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit Drain-source breakdown voltage ID = 250 µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 30 V ±100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 22.5 A 0.07 0.10 Ω Min. Typ. Max. Unit V(BR)DSS Table 6. Symbol 500 3 V Dynamic Parameter Test conditions gfs (1) Forward transconductance VDS >ID(on) x RDS(on)max ID = 22.5 A - 20 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 - 3600 1260 80 pF pF pF Equivalent output capacitance VGS=0, VDS =0 to 400 V - 350 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 400 V, ID = 45 A VGS =10 V Figure 14 - 92 22 40 RG Gate input resistance f=1 MHz Gate DC Bias= 0 test signal level = 20 mV open drain - 2 Coss eq.(2) 120 nC nC nC Ω 1. Pulsed: pulse duration=300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 Doc ID 7955 Rev 10 STW45NM50FD Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=250 V, ID= 22.5 A, RG=4.7 Ω, VGS=10 V Figure 15 - 26.5 107.5 - ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD=400 V, ID= 45 A, RG=4.7 Ω, VGS=10 V Figure 15 - 21.6 87.7 110.9 - ns ns ns Min. Typ. Table 8. Symbol ISD ISDM(1) VSD (2) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Test conditions Max. Unit Source-drain current - 45 A Source-drain current (pulsed) - 180 A 1.5 V Forward on voltage ISD = 45 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45 A, VDD = 100 V di/dt = 100 A/µs, (see Figure 18) - 200 1600 16 ns nC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 45 A, Tj = 150 °C di/dt = 100 A/µs, VDD=100 V, (see Figure 18) - 324 4017 24.8 ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Doc ID 7955 Rev 10 5/12 Electrical characteristics STW45NM50FD 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Transconductance Figure 7. Static drain-source on resistance 6/12 Doc ID 7955 Rev 10 STW45NM50FD Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics Doc ID 7955 Rev 10 7/12 Test circuits 3 STW45NM50FD Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 µF 2200 RL µF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 µF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 AM01469v1 Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit A A D.U.T. FAST DIODE B B L A D G VD L=100µH S 3.3 µF B 25 Ω 1000 µF D VDD 2200 µF 3.3 µF VDD ID G RG S Vi D.U.T. Pw AM01470v1 Figure 17. Unclamped inductive waveform AM01471v1 Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/12 0 Doc ID 7955 Rev 10 10% AM01473v1 STW45NM50FD 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Doc ID 7955 Rev 10 9/12 Package mechanical data STW45NM50FD TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 10/12 Max. 5.15 5.50 Doc ID 7955 Rev 10 STW45NM50FD 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 05-Apr-2005 8 Modified value on Source drain diode 26-Apr-2006 9 New template 23-Jul-2009 10 Modified values on Switching times Doc ID 7955 Rev 10 11/12 STW45NM50FD Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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