STMICROELECTRONICS T810H-6G

T810H
High temperature 8 A sensitive TRIACs
Features
A2
■
Medium current TRIAC
■
Logic level sensitive TRIAC
■
150 °C max. Tj turn-off commutation
■
Clip bounding
■
RoHS (2002/95/EC) compliant packages
G
A1
A2
Applications
A2
■
The T810H is designed for the control of AC
actuators in appliances and industrial systems.
■
The multi-port drive of the microcontroller can
control the multiple loads of such appliances
and systems through these sensitive gate
TRIACs.
A2
G
G
A2
A1
A1
D2PAK
T810H-6G
TO-220AB
T810H-6T
Description
Specifically designed to operate at 150 °C, the
new 8 A T810H TRIACs provide an enhanced
performance in terms of power loss and thermal
dissipation. This allows the optimization of the
heatsink size, leading to space and cost
effectiveness when compared to electromechanical solutions.
Based on ST logic level technology, they offer an
IGT lower than 10 mA and specified minimal
commutation and high noise immunity levels valid
up to the Tj max.
May 2009
Table 1.
Device summary
Symbol
Value
Unit
IT(RMS)
8
A
VDRM/VRRM
600
V
IGT MAX
10
mA
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10
Characteristics
T810H
1
Characteristics
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
A
IT(RMS)
On-state rms current (full sine wave)
D2PAK, TO-220AB
Tc = 135 °C
8
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
F = 60 Hz
t = 16.7 ms
84
ITSM
F = 50 Hz
t = 20 ms
80
I²t Value for fusing
tp = 10 ms
Critical rate of rise of on-state current
IG = 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Non repetitive surge peak off-state
voltage
Peak gate current
I²t
dI/dt
VDSM/VRSM
IGM
PG(AV)
Tstg
Tj
Table 3.
VGT
VGD
IH
(1)
IL
dV/dt (1)
(dI/dt)c (1)
42
A ²s
Tj = 150 °C
50
A/µs
tp = 10 ms
Tj = 25 °C
VDRM/VRRM
+ 100
V
tp = 20 µs
Tj = 150 °C
4
A
Tj = 150 °C
1
W
- 40 to + 150
- 40 to + 150
°C
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
IGT
A
Test conditions
VD = 12 V RL = 33 Ω
Quadrant
Min
Max.
Unit
I - II - III
1
10
mA
1.0
V
I - II - III
VD = VDRM, RL = 3.3 kΩ
I - II - III
IT = 100 mA
V
25
IG = 1.2 IGT
I - III
30
II
35
mA
mA
VD = 67% VDRM, gate open, Tj = 150 °C
75
Logic level, 0.1 V/µs, Tj = 150 °C
11.4
Logic level, 15 V/µs, Tj = 150 °C
3.0
1. For both polarities of A2 referenced to A1.
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V/µs
A/ms
T810H
Characteristics
Table 4.
Static characteristics
Symbol
Test conditions
VT (1)
Value
Unit
ITM = 11.3 A, tp = 380 µs
Tj = 25 °C
MAX.
1.5
V
Vt0
(1)
Threshold voltage
Tj = 150 °C
MAX.
0.80
V
Rd
(1)
Dynamic resistance
Tj = 150 °C
MAX.
55.0
mΩ
Tj = 25 °C
MAX.
5
µA
Tj = 150 °C
MAX.
3.1
VD/VR = 400 V (at peak mains voltage) Tj = 150 °C
MAX.
2.5
VD/VR = 200 V (at peak mains voltage) Tj = 150 °C
MAX.
2.0
VDRM = VRRM
IDRM
IRRM
mA
1. for both polarities of A2 referenced to A1.
Table 5.
Thermal resistance
Symbol
Parameter
D2PAK / TO-220AB
Junction to case (AC)
Rth(j-c)
S=1
Rth(j-a)
Figure 1.
Value
cm2
Unit
1.60
D2PAK
45
TO-220AB
60
°C/W
Junction to ambient
Maximum power dissipation versus Figure 2.
on-state rms current (full cycle)
P(W)
On-state rms current versus case
temperature (full cycle)
IT(RMS)(A)
10
10
9
9
8
8
7
7
6
6
5
5
4
4
3
3
2
2
1
1
IT(RMS)(A)
TC(°C)
0
0
0
1
2
3
4
5
6
7
8
0
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25
50
75
100
125
150
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Characteristics
Figure 3.
T810H
On-state rms current versus
ambient temperature (free air
convection, full cycle)
Figure 4.
Relative variation of thermal
impedance, versus pulse duration
K=[Zth/Rth]
IT(RMS)(A)
1.E+00
3.0
2.5
Zth(j-c)
1.E-01
2.0
Zth(j-a)
1.5
1.0
1.E-02
0.5
Ta (°C)
tp(s)
0.0
0
25
Figure 5.
50
75
100
125
150
1.E-03
1.E-03
1.E-02
Relative variation of gate trigger
Figure 6.
current and voltage versus junction
temperature (typical values)
IGT, VGT[T j] / IGT, VGT[T j=25 °C]
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Relative variation of holding and
latching current versus junction
temperature (typical values)
IH, IL [T j] / IH, IL [T j=25 °C]
2.5
2.0
IGT Q3
IGT Q1- Q2
2.0
IH
1.5
1.5
IL
1.0
1.0
VGT Q1- Q2 -Q3
0.5
0.5
Tj(°C)
Tj(°C)
0.0
0.0
-50
Figure 7.
-25
0
25
50
75
100
125
150
Surge peak on-state current
versus number of cycles
-50
-25
Figure 8.
0
25
50
75
100
125
150
Non-repetitive surge peak on-state
current and corresponding value
of I2t
ITSM (A), I²t (A²s)
ITSM(A)
1000
80
Tj initial=25 °C
70
ITSM
t=20ms
60
Non repetitive
Tj initial=25 °C
50
dI/dt limitation: 50 A/µs
One cycle
100
40
I²t
30
10
20
Repetitive
TC=135 °C
10
Number of cycles
Sinusoidal pulse width tp < 10 ms
0
1
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tP(ms)
1
10
100
1000
0.01
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1.00
10.00
T810H
Characteristics
Figure 9.
On-state characteristics (maximum Figure 10. Relative variation of critical rate of
values)
decrease of main current versus
junction temperature
ITM (A)
(dI/dt)C [T j] / (dI/dt)c [T j=150 °C]
100
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Tj max
Vto = 0.80 V
Rd = 55 mΩ
10
Tj=150 °C
Tj=25 °C
VTM (V)
1
0
1
2
3
4
50
75
100
125
150
Figure 12. Relative variation of static dV/dt
immunity versus junction
temperature
dV/dt [T j] / dV/dt [T j=150 °C]
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
4
3
2
1
(dV/dt)C (V/µs)
0
0.1
25
5
Figure 11. Relative variation of critical rate of
decrease of main current versus
reapplied dV/dt (typical values)
T j(°C)
1.0
10.0
100.0
VD=VR=400 V
T j(°C)
25
50
75
100
125
150
Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal
junction temperature for different
resistance versus repetitive peak
values of blocking voltage
off-state voltage
IDRM/IRRM [Tj;V DRM/ VRRM]/IDRM/IRRM [Tj=150°C; 600V]
Rth(c-a) (°C/W)
1.0E+00
60
Rth(j-c)=1.6 °C/W
TJ=150 °C
55
VDRM=VRRM=600 V
50
1.0E-01
45
VDRM=VRRM=400 V
40
35
VDRM=VRRM=200 V
1.0E-02
30
25
20
15
1.0E-03
10
VAC PEAK(V)
5
T j(°C)
0
1.0E-04
25
50
75
100
125
150
200
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400
500
600
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Ordering information scheme
2
T810H
Ordering information scheme
Figure 15. Ordering information scheme
T
Triac series
Current
8=8A
Sensitivity
10 = 10 mA
High temperature
Voltage
6 = 600 V
Package
G = D2PAK
T = TO-220AB
Packing
Blank = Tube (D2PAK, TO-220AB)
-TR = Tape and reel (D2PAK)
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8
10 H - 6 y
-TR
T810H
3
Package information
Package information
●
Epoxy meets UL94, V0
●
Recommended torque 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
D2PAK dimensions
Dimensions
Ref.
Millimeters
Min.
Typ.
Inches
Max.
Min.
Typ.
Max.
A
4.30
4.60
0.169
0.181
A1
2.49
2.69
0.098
0.106
A2
0.03
0.23
0.001
0.009
B
0.70
0.93
0.027
0.037
B2
1.25
C
0.45
0.60
0.017
0.024
C2
1.21
1.36
0.047
0.054
D
8.95
9.35
0.352
0.368
E
10.00
10.28 0.393
0.405
G
4.88
5.28
0.192
0.208
L
15.00
15.85 0.590
0.624
L2
1.27
1.40
0.050
0.055
L3
1.40
1.75
0.055
0.069
A
E
C2
L2
D
L
L3
1.40
0.048 0.055
A1
B2
R
C
B
G
A2
2mm min.
FLAT ZONE
V2
R
0.40
V2
0°
0.016
8°
0°
8°
Figure 16. Footprint (dimensions in mm)
16.90
10.30
5.08
1.30
8.90
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Package information
Table 7.
T810H
TO-220AB dimensions
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
C
B
ØI
F
A
I4
Max.
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
b2
L
Typ.
Inches
l3
c2
a1
l2
a2
M
b1
e
c1
M
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0.102
T810H
4
Ordering information
Ordering information
Table 8.
5
Ordering information
Order code
Marking
Package
Weight
Base qty
Delivery mode
T810H-6G
T810H 6G
D2PAK
1.5 g
50
Tube
T810H-6G-TR
T810H 6G
D2
1.5 g
1000
Tape and reel
T810H-6T
T810H 6T
2.3 g
50
Tube
PAK
TO-220AB
Revision history
Table 9.
Document revision history
Date
Revision
15-May-2009
1
Changes
First issue.
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T810H
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