STMICROELECTRONICS VNQ830P-E

VNQ830P-E
Quad channel high-side driver
Features
Type
RDS(on)
IOUT
VCC
VNQ830P-E
65 mΩ(1)
6A
36 V
1. Per each channel.
■
ECOPACK®: lead free and RoHS compliant
■
Automotive Grade: compliance with AEC
guidelines
■
Very low standby current
■
CMOS compatible input
■
On-state open-load detection
■
Off-state open-load detection
■
Thermal shutdown protection and diagnosis
■
Undervoltage shutdown
■
Overvoltage clamp
■
Output stuck to VCC detection
■
Load current limitation
■
Reverse battery protection
■
Electrostatic discharge protection
SO-28 (double island)
Description
The VNQ830P-E is a quad HSD formed by
assembling two VND830P-E chips in the same
SO-28 package. The VND830P-E is a monolithic
device made using| STMicroelectronics™
VIPower™ M0-3 technology. The VNQ830P-E is
intended for driving any type of multiple load with
one side connected to ground.
The active VCC pin voltage clamp protects the
device against low energy spikes (see ISO7637
transient compatibility table). Active current
limitation combined with thermal shutdown and
automatic restart protects the device against overload. The device detects the open-load condition
in both the on and off-state.
In the off-state the device detects if the output is
shorted to VCC. The device automatically turns off
in the case where the ground pin becomes
disconnected.
Table 1.
May 2010
Device summary
Package
Tube
Tape and reel
SO-28
VNQ830P-E
VNQ830PTR-E
Doc ID 10861 Rev 3
1/28
www.st.com
1
VNQ830P-E
Contents
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
3.1
4
6
3.1.1
Solution 1: a resistor in the ground line (RGND only) . . . . . . . . . . . . . . 18
3.1.2
Solution 2: a diode (DGND) in the ground line . . . . . . . . . . . . . . . . . . . . 19
3.2
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.3
MCU I/O protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
3.4
Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.5
Maximum demagnetization energy (VCC = 13.5 V) . . . . . . . . . . . . . . . . . 21
Package and PCB thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.1
5
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 18
SO-28 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.1
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.2
SO-28 packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 10861 Rev 3
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VNQ830P-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Table 16.
Table 17.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Suggested connections for unused and not connected pins . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal data (per island) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
VCC - output diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching (VCC = 13V; Tj = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Logic inputs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Status pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Open-load detection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Electrical transient requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Thermal calculation according to the PCB heatsink area . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SO-28 mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Doc ID 10861 Rev 3
3/28
VNQ830P-E
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Status timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Off-state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Turn-on voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Overvoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Turn-off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
ILIM vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
On-state resistance vs VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
On-state resistance vs Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Status leakage current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Status low output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Status clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Open-load on-state detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Open-load off-state voltage detection threshold . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Open-load detection in off-state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Maximum turn-off current versus load inductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
SO-28 PC board . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Rthj-amb vs PCB copper area in open box free air condition . . . . . . . . . . . . . . . . . . . . . . 23
SO-28 thermal impedance junction ambient single pulse . . . . . . . . . . . . . . . . . . . . . . . . . 23
Thermal fitting model of a quad channel HSD in SO-28 . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
SO-28 package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
SO-28 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
SO-28 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Doc ID 10861 Rev 3
4/28
VNQ830P-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
VCC1,2
Vcc
OVERVOLTAGE
CLAMP
UNDERVOLTAGE
GND1,2
CLAMP 1
OUTPUT1
INPUT1
DRIVER 1
CLAMP 2
STATUS1
CURRENT LIMITER 1
LOGIC
DRIVER 2
OUTPUT2
OVERTEMP. 1
OPEN-LOAD ON 1
CURRENT LIMITER 2
INPUT2
OPEN-LOAD OFF 1
OPEN-LOAD ON 2
STATUS2
OPEN-LOAD OFF 2
OVERTEMP. 2
VCC3,4
Vcc
CLAMP
OVERVOLTAGE
UNDERVOLTAGE
GND3,4
CLAMP 3
INPUT3
OUTPUT3
DRIVER 3
CLAMP 4
STATUS3
OVERTEMP. 3
LOGIC
CURRENT LIMITER 3
DRIVER 4
OUTPUT4
OPEN-LOAD ON 3
CURRENT LIMITER 4
INPUT4
OPEN-LOAD OFF 3
OPEN-LOAD ON 4
STATUS4
OPEN-LOAD OFF 4
OVERTEMP. 4
Doc ID 10861 Rev 3
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VNQ830P-E
Block diagram and pin description
Figure 2.
Configuration diagram (top view)
VCC1,2
1
VCC1,2
GND 1,2
OUTPUT1
INPUT1
OUTPUT1
STATUS1
OUTPUT1
STATUS2
OUTPUT2
INPUT2
OUTPUT2
VCC1,2
OUTPUT2
VCC3,4
OUTPUT3
GND 3,4
OUTPUT3
INPUT3
OUTPUT3
STATUS3
OUTPUT4
STATUS4
OUTPUT4
INPUT4
OUTPUT4
VCC3,4
Table 2.
28
14
15
VCC3,4
Suggested connections for unused and not connected pins
Connection / pin
Status
N.C.
Output
Input
Floating
X
X
X
X
To ground
X
Doc ID 10861 Rev 3
Through 10 KΩ
resistor
6/28
VNQ830P-E
Electrical specifications
2
Electrical specifications
2.1
Absolute maximum ratings
Stressing the device above the rating listed in Table 3 may cause permanent damage to the
device. These are stress ratings only and operation of the device at these or any other
conditions above those indicated in the operating sections of this specification is not implied.
Exposure to Absolute Maximum Rating conditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality
document.
Table 3.
Absolute maximum ratings
Symbol
VCC
Parameter
DC supply voltage
Value
Unit
41
V
- VCC
Reverse DC supply voltage
- 0.3
V
- IGND
DC reverse ground pin current
- 200
mA
Internally limited
A
-6
A
IOUT
- IOUT
DC output current
Reverse DC output current
IIN
DC input current
+/- 10
mA
ISTAT
DC status current
+/- 10
mA
VESD
Electrostatic discharge (Human Body Model: R=1.5 KΩ;
C = 100 pF)
- INPUT
- STATUS
- OUTPUT
- VCC
4000
4000
5000
5000
V
V
V
V
EMAX
Maximum switching energy
(L = 1.5 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C; IL = 9 A)
85
mJ
6.25
W
Internally limited
°C
- 55 to 150
°C
Ptot
Tj
Tstg
Power dissipation (per island) at Tlead = 25 °C
Junction operating temperature
Storage temperature
Doc ID 10861 Rev 3
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VNQ830P-E
2.2
Electrical specifications
Thermal data
Table 4.
Thermal data (per island)
Symbol
Parameter
Value
Unit
15
°C/W
Rthj-lead
Thermal resistance junction-lead
Rthj-amb
Thermal resistance junction-ambient
(one chip ON)
60(1)
44(2)
°C/W
Rthj-amb
Thermal resistance junction-ambient
(two chips ON)
46(1)
31(2)
°C/W
1. When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35 µm thick) connected
to all VCC pins. Horizontal mounting and no artificial air flow.
2. When mounted on a standard single-sided FR-4 board with 6cm2 of Cu (at least 35 µm thick) connected to
all VCC pins. Horizontal mounting and no artificial air flow.
2.3
Electrical characteristics
Values specified in this section are for 8 V < VCC < 36 V; -40°C < Tj < 150°C, unless
otherwise stated.
Figure 3.
Current and voltage conventions
IS3,4
IS1,2
VCC3,4
VCC3,4
VCC1,2
VF1(1)
VCC1,2
IIN1
ISTAT1
VIN1
IIN2
VSTAT1
ISTAT2
VIN2
IIN3
VSTAT2
ISTAT3
VIN3
VSTAT3
IIN4
VIN4 ISTAT4
VSTAT4
INPUT1
IOUT1
STATUS1
OUTPUT1
VOUT1
IOUT2
INPUT2
OUTPUT2
STATUS2
VOUT2
IOUT3
INPUT3
OUTPUT3
STATUS3
IOUT4
INPUT4
OUTPUT4
STATUS4
GND3,4
VOUT3
VOUT4
GND1,2
IGND3,4
IGND1,2
1. VFn = VCCn - VOUTn during reverse battery condition.
Table 5.
Symbol
Power
Parameter
VCC
Operating supply
voltage
VUSD
VOV
Test conditions
Min.
Typ. Max. Unit
5.5
13
36
V
Undervoltage shutdown
3
4
5.5
V
Overvoltage shutdown
36
Doc ID 10861 Rev 3
V
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VNQ830P-E
Electrical specifications
Table 5.
Power (continued)
Symbol
Parameter
RON
Min.
Typ. Max. Unit
IOUT = 2 A; Tj = 25°C
IOUT = 2 A; VCC > 8 V
On-state resistance
Supply current
IS
65
130
mΩ
mΩ
Off-state; VCC = 13 V;
VIN = VOUT = 0 V
12
40
µA
Off-state; VCC = 13 V;
VIN = VOUT = 0 V;
Tj = 25°C
12
25
µA
On-state; VCC = 13 V; VIN = 5 V;
IOUT = 0 A
5
7
mA
0
50
µA
-75
0
µA
IL(off1)
Off-state output current VIN = VOUT = 0 V
IL(off2)
Off-state output current VIN = 0V; VOUT = 3.5 V
IL(off3)
Off-state output current
VIN = VOUT = 0V; VCC = 13 V;
Tj = 125°C
5
µA
IL(off4)
Off-state output current
VIN = VOUT = 0 V; VCC = 13 V;
Tj =25°C
3
µA
Table 6.
Protections
Symbo
l
Min.
Typ.
Max.
Unit
Shutdown temperature
150
175
200
°C
TR
Reset temperature
135
Thyst
Thermal hysteresis
7
tSDL
Status delay in overload
conditions
Tj > TTSD
Ilim
Current limitation
VCC = 13 V
5.5 V < VCC < 36 V
Turn-off output clamp
voltage
IOUT = 2 A;
L = 6 mH
TTSD
Vdemag
Note:
Test conditions
Parameter
Test conditions
°C
15
6
VCC -41
°C
9
20
µs
15
15
A
A
VCC -48 VCC -55
V
To ensure long term reliability under heavy overload or short circuit conditions, protection
and related diagnostic signals must be used together with a proper software strategy. If the
device is subjected to abnormal conditions, this software must limit the duration and number
of activation cycles.
Table 7.
VCC - output diode
Symbol
Parameter
Test conditions
VF
Forward on voltage
- IOUT = 1.2 A; Tj = 150°C
Doc ID 10861 Rev 3
Min.
Typ.
Max.
Unit
-
-
0.6
V
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VNQ830P-E
Electrical specifications
Table 8.
Symbol
Switching (VCC = 13V; Tj = 25°C)
Parameter
Test conditions
Min.
Typ.
Max. Unit
td(on)
Turn-on delay time
RL = 6.5Ω from VIN rising
edge to VOUT = 1.3 V (see
Figure 5)
-
30
-
µs
td(off)
Turn-off delay time
RL = 6.5 Ω from VIN falling
edge to VOUT = 11.7 V
(see Figure 5)
-
30
-
µs
dVOUT/dt(on) Turn-on voltage slope
RL = 6.5 Ω from VOUT =
1.3 V to VOUT = 10.4 V
(see Figure 5)
-
See
Figure 10
-
V/µs
dVOUT/dt(off) Turn-off voltage slope
RL = 6.5 Ω from VOUT =
11.7 V to VOUT = 1.3 V
(see Figure 5)
-
See
Figure 12
-
V/µs
Table 9.
Symbol
Logic inputs
Parameter
Test conditions
VIL
Input low level
IIL
Low level input current
VIH
Input high level
IIH
High level input current
VI(hyst)
Input hysteresis voltage
VICL
Table 10.
Symbol
Input clamp voltage
VIN = 1.25 V
Min.
Typ.
Max.
Unit
1.25
V
1
µA
3.25
V
VIN = 3.25 V
10
0.5
IIN = 1 mA
IIN = -1 mA
6
µA
V
6.8
- 0.7
8
V
V
Max.
Unit
Status pin
Parameter
Test conditions
Min.
Typ.
VSTAT
Status low output voltage
ISTAT = 1.6 mA
0.5
V
ILSTAT
Status leakage current
Normal operation;
VSTAT = 5 V
10
µA
CSTAT
Status pin input capacitance
Normal operation;
VSTAT = 5 V
100
pF
VSCL
Status clamp voltage
ISTAT = 1 mA
ISTAT = - 1 mA
8
V
V
Doc ID 10861 Rev 3
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6.8
- 0.7
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VNQ830P-E
Electrical specifications
Table 11.
Open-load detection
Symbol
Parameter
Test conditions
IOL
Open-load on-state detection
VIN = 5 V
threshold
tDOL(on)
Open-load on-state detection
IOUT = 0 A
delay
VOL
Open-load off-state voltage
detection threshold
tDOL(off)
Open-load detection delay at
turn-off
Figure 4.
VIN = 0 V
Min.
Typ.
Max.
Unit
50
100
200
mA
200
µs
3.5
V
1000
µs
1.5
2.5
Status timings
OPEN-LOAD STATUS TIMING (with external pull-up)
IOUT < IOL
VOUT > VOL
VINn
OVERTEMP STATUS TIMING
Tj > TTSD
VINn
VSTATn
VSTATn
tSDL
tDOL(off)
tSDL
tDOL(on)
Doc ID 10861 Rev 3
11/28
VNQ830P-E
Electrical specifications
Figure 5.
Switching characteristics
VOUT
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
10%
tr
tf
t
ISENSE
90%
INPUT
t
tDSENSE
td(on)
td(off)
t
Table 12.
Truth table
Conditions
Input
Output
Status
Normal operation
L
H
L
H
H
H
Current limitation
L
H
H
L
X
X
H
(Tj < TTSD) H
(Tj > TTSD) L
Overtemperature
L
H
L
L
H
L
Undervoltage
L
H
L
L
X
X
Overvoltage
L
H
L
L
H
H
Output voltage > VOL
L
H
H
H
L
H
Output current < IOL
L
H
L
H
H
L
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VNQ830P-E
Electrical specifications
Table 13.
Electrical transient requirements
ISO T/R
Test level
7637/1
test pulse
I
II
III
IV
1
- 25 V(1)
- 50 V(1)
- 75 V(1)
- 100 V(1)
2
V(1)
(1)
(1)
(1)
0.2 ms, 10 Ω
- 100 V
(1)
- 150 V
0.1 µs, 50 Ω
+ 75 V(1)
+ 100 V(1)
0.1 µs, 50 Ω
+ 25
(1)
3a
- 25 V
3b
+ 25 V(1)
4
5
-4
V(1)
(1)
+ 26.5 V
+ 50 V
- 50 V
(1)
+ 50 V(1)
(1)
-5V
(2)
+ 46.5 V
+ 75 V
(1)
(1)
-6V
+ 66.5 V
(2)
Delays and impedance
+ 100 V
(1)
-7V
+ 86.5 V
(2)
2 ms, 10 Ω
100 ms, 0.01 Ω
400 ms, 2 Ω
1. All functions of the device are performed as designed after exposure to disturbance.
2. One or more functions of the device is not performed as designed after exposure and cannot be returned to
proper operation without replacing the device.
Doc ID 10861 Rev 3
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VNQ830P-E
Electrical specifications
Figure 6.
Waveforms
NORMAL OPERATION
INPUTn
LOAD VOLTAGEn
STATUSn
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUTn
LOAD VOLTAGEn
STATUS
undefined
OVERVOLTAGE
VCC<VOV
VCC > VOV
VCC
INPUTn
LOAD VOLTAGEn
STATUSn
OPEN-LOAD with external pull-up
INPUTn
VOUT > VOL
LOAD VOLTAGEn
VOL
STATUSn
OPEN-LOAD without external pull-up
INPUTn
LOAD VOLTAGEn
STATUSn
Tj
TTSD
TR
OVERTEMPERATURE
INPUTn
LOAD CURRENTn
STATUSn
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VNQ830P-E
Electrical specifications
2.4
Electrical characteristics curves
Figure 7.
Off-state output current
Figure 8.
IL(off1) (uA)
High level input current
Iih (uA)
2.5
5
2.25
4.5
Off state
Vcc=36V
Vin=Vout=0V
2
1.75
Vin=3.25V
4
3.5
1.5
3
1.25
2.5
1
2
0.75
1.5
0.5
1
0.25
0.5
0
0
-50
-25
0
25
50
75
100
125
150
-50
175
-25
0
25
Figure 9.
50
75
100
125
150
175
150
175
150
175
Tc (°C)
Tc (°C)
Input clamp voltage
Figure 10. Turn-on voltage slope
dVout/dt(on) (V/ms)
Vicl (V)
800
8
7.8
700
Iin=1mA
7.6
Vcc=13V
Rl=6.5Ohm
600
7.4
500
7.2
400
7
6.8
300
6.6
200
6.4
100
6.2
0
6
-50
-25
0
25
50
75
100
125
150
-50
175
-25
0
25
Figure 11.
50
75
100
125
Tc (ºC)
Tc (°C)
Overvoltage shutdown
Figure 12. Turn-off voltage slope
Vov (V)
dVout/dt(off) (V/ms)
50
600
48
550
Vcc=13V
Rl=6.5Ohm
46
500
44
450
42
400
40
38
350
36
300
34
250
32
200
30
-50
-25
0
25
50
75
100
125
150
-50
175
-25
0
25
50
75
100
125
Tc (ºC)
Tc (°C)
Doc ID 10861 Rev 3
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VNQ830P-E
Electrical specifications
Figure 13. ILIM vs Tcase
Figure 14. On-state resistance vs VCC
Ilim (A)
Ron (mOhm)
20
120
18
Tc=150°C
110
Vcc=13V
16
100
90
14
80
12
70
10
60
8
50
6
40
4
30
Tc=25°C
Tc= - 40°C
20
2
Iout=2A
10
0
-50
-25
0
25
50
75
100
125
150
0
175
5
Tc (°C)
10
15
20
25
30
35
40
Vcc (V)
Figure 15. Input high level
Figure 16. Input hysteresis voltage
Vih (V)
Vhyst (V)
3.6
1.5
3.4
1.4
3.2
1.3
1.2
3
1.1
2.8
1
2.6
0.9
2.4
0.8
0.7
2.2
0.6
2
-50
-25
0
25
50
75
100
125
150
0.5
175
-50
Tc (°C)
-25
0
25
50
75
100
125
150
175
100
125
150
175
Tc (°C)
Figure 17. On-state resistance vs Tcase
Figure 18. Input low level
Ron (mOhm)
Vil (V)
160
2.6
2.4
140
Iout=2A
Vcc=8V; 13V & 36V
120
2.2
100
2
80
1.8
60
1.6
40
1.4
20
1.2
1
0
-50
-25
0
25
50
75
100
125
150
-50
175
-25
0
25
50
75
Tc (°C)
Tc (°C)
Doc ID 10861 Rev 3
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VNQ830P-E
Electrical specifications
Figure 19. Status leakage current
Figure 20. Status low output voltage
Ilstat (uA)
Vstat (V)
0.05
0.8
0.7
Istat=1.6mA
0.04
0.6
Vstat=5V
0.5
0.03
0.4
0.02
0.3
0.2
0.01
0.1
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
Tc (°C)
50
75
100
125
150
175
Tc (°C)
Figure 21. Status clamp voltage
Figure 22. Open-load on-state detection
threshold
Vscl (V)
Iol (mA)
8
150
7.8
140
Istat=1mA
7.6
Vcc=13V
Vin=5V
130
7.4
120
7.2
110
7
100
6.8
90
6.6
80
6.4
70
6.2
60
6
50
-50
-25
0
25
50
75
100
125
150
175
-50
Tc (°C)
-25
0
25
50
75
100
125
150
175
Tc (°C)
Figure 23. Open-load off-state voltage
detection threshold
Vol (V)
5
4.5
Vin=0V
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
175
Tc (°C)
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VNQ830P-E
3
Application information
Application information
Figure 24. Application schematic
+5V +5V
+5V
VCC1,2
VCC3,4
Rprot
STATUS1
Rprot
INPUT1
Dld
Rprot
STATUS2
Rprot
INPUT2
Rprot
STATUS3
μC
Rprot
OUTPUT1
OUTPUT2
OUTPUT3
INPUT3
Rprot
STATUS4
OUTPUT4
Rprot
INPUT4
GND1,2
GND3,4
RGND
VGND
+5V +5V
DGND
Note:
Channels 3 & 4 have the same internal circuit as channel 1 & 2.
3.1
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
3.1.1
Solution 1: a resistor in the ground line (RGND only)
This can be used with any type of load.
The following show how to dimension the RGND resistor:
1.
RGND ≤ 600 mV / 2 (IS(on)max)
2.
RGND ≥ ( - VCC) / ( - IGND)
Doc ID 10861 Rev 3
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VNQ830P-E
Application information
where - IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power dissipation in RGND (when VCC < 0 during reverse battery situations) is:
PD = ( - VCC)2/ RGND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
RGND produces a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift varies depending on how many devices are ON in the case of several highside drivers sharing the same RGND .
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
3.1.2
Solution 2: a diode (DGND) in the ground line
A resistor (RGND = 1 kΩ) should be inserted in parallel to DGND if the device is driving an
inductive load. This small signal diode can be safely shared amongst several different HSD.
Also in this case, the presence of the ground network produces a shift (~600mV) in the input
threshold and the status output values if the microprocessor ground is not common with the
device ground. This shift not varies if more than one HSD shares the same diode/resistor
network. Series resistor in INPUT and STATUS lines are also required to prevent that,
during battery voltage transient, the current exceeds the Absolute Maximum Rating. Safest
configuration for unused INPUT and STATUS pin is to leave them unconnected.
3.2
Load dump protection
Dld is necessary (voltage transient suppressor) if the load dump peak voltage exceeds the
VCC maximum DC rating. The same applies if the device is subject to transients on the VCC
line that are greater than those shown in Table 13.
3.3
MCU I/O protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins are pulled negative. ST suggests to insert a resistor (Rprot) in line to prevent
the microcontroller I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of microcontroller
and the current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of
microcontroller I/Os:
- VCCpeak / Ilatchup ≤ Rprot ≤ (VOHμC - VIH - VGND) / IIHmax
Doc ID 10861 Rev 3
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VNQ830P-E
Application information
Example
For the following conditions:
VCCpeak = - 100 V
Ilatchup ≥ 20 mA
VOHμC ≥ 4.5 V
5 kΩ ≤ Rprot ≤ 65 kΩ.
Recommended values are:
Rprot = 10 kΩ
3.4
Open-load detection in off-state
Off-state open-load detection requires an external pull-up resistor (RPU) connected between
OUTPUT pin and a positive supply voltage (VPU) like the +5V line used to supply the
microprocessor.
The external resistor has to be selected according to the following requirements:
1.
No false open load indication when load is connected: in this case we have to avoid
VOUT to be higher than VOlmin; this results in the following condition:
VOUT = (VPU / (RL + RPU))RL < VOlmin.
2.
No misdetection when load is disconnected: in this case the VOUT has to be higher than
VOLmax; this results in the following condition:
RPU < (VPU - VOLmax) / IL(off2).
Because Is(OFF) may significantly increase if Vout is pulled high (up to several mA), the pullup resistor RPU should be connected to a supply that is switched OFF when the module is in
standby.
Figure 25. Open-load detection in off-state
V batt.
VPU
VCC
RPU
INPUT
DRIVER
+
LOGIC
IL(off2)
OUT
+
STATUS
R
VOL
RL
GROUND
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VNQ830P-E
3.5
Application information
Maximum demagnetization energy (VCC = 13.5 V)
Figure 26. Maximum turn-off current versus load inductance
ILM AX (A)
100
10
A
C
B
1
0.1
1
10
100
L(mH)
A = single pulse at TJstart = 150ºC
B= repetitive pulse at TJstart = 100ºC
C= repetitive pulse at TJstart = 125ºC
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
Note:
Values are generated with RL = 0 Ω.
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves B and C.
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VNQ830P-E
Package and PCB thermal data
4
Package and PCB thermal data
4.1
SO-28 thermal data
Figure 27. SO-28 PC board
Note:
Layout condition of Rth and Zth measurements (PCB FR4 area = 58 mm x 58 mm, PCB
thickness = 2 mm, Cu thickness = 35 µm, Copper areas: 0.5 cm2, 3 cm2, 6 cm2).
Table 14.
Thermal calculation according to the PCB heatsink area
Chip 1
Chip 2
Tjchip1
Tjchip2
Note
ON
OFF
RthA x Pdchip1 + Tamb
RthC x Pdchip1 + Tamb
OFF
ON
RthC x Pdchip2 + Tamb
RthA x Pdchip2 + Tamb
ON
ON
RthB x (Pdchip1 + Pdchip2) +
Tamb
RthB x (Pdchip1 + Pdchip2) +
Tamb
Pdchip1 = Pdchip2
ON
ON
(RthA x Pdchip1) + RthC x
Pdchip2 + Tamb
(RthA x Pdchip2) + RthC x
Pdchip1 + Tamb
Pdchip1 ≠ Pdchip2
RthA = thermal resistance junction to ambient with one chip ON
RthB = thermal resistance junction to ambient with both chips ON and Pdchip1 = Pdchip2
RthC = mutual thermal resistance
Doc ID 10861 Rev 3
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VNQ830P-E
Package and PCB thermal data
Figure 28. Rthj-amb vs PCB copper area in open box free air condition
RTHj_am b
(°C/W)
70
60
50
RthA
40
RthB
30
RthC
20
10
0
1
2
3
4
5
PCB Cu heatsink area (cm ^2)/island
6
7
Figure 29. SO-28 thermal impedance junction ambient single pulse
ZT H (°C/W)
1000
100
Footprint
6 cm2
10
1
0.1
0.0001
0.001
0.01
0.1
1
T ime (s)
Doc ID 10861 Rev 3
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100
1000
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VNQ830P-E
Package and PCB thermal data
Equation 1: pulse calculation formula
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ )
where
δ = tp ⁄ T
Figure 30. Thermal fitting model of a quad channel HSD in SO-28
Tj_1
P d1
T j _2
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
C 10
C 11
C 12
C 13
R 13
P d2
C 14
R 14
R 17
Tj_3
R 18
C7
C8
C9
R7
R8
R9
P d3
T j _4
P d4
C 15
R 15
R 10
R 11
R 12
C 16
R 16
T_am b
Table 15.
Thermal parameters
Area / island (cm2)
Footprint
R1 = R7 = R13 = R15 (°C/W)
0.15
R2 = R8 = R14 = R16 (°C/W)
0.8
R3 = R9 (°C/W)
4.5
R4 = R10 (°C/W)
11
R5 = R11 (°C/W)
15
R6 = R12 (°C/W)
5
C1 = C7 = C13 = C15 (W.s/°C)
0.0006
C2 = C8 = C14 = C16 (W.s/°C)
2.10 E-03
C3 = C9 (W.s/°C)
6 E-03
C4 = C10 (W.s/°C)
0.2
C5 = C11 (W.s/°C)
1.5
C6 = C12 (W.s/°C)
5
R17 = R18 (°C/W)
150
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8
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VNQ830P-E
Package and packing information
5
Package and packing information
5.1
ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Figure 31. SO-28 package dimensions
Table 16.
SO-28 mechanical data
Millimeters
Symbol
Min.
Typ.
A
Max.
2.65
a1
0.10
0.30
b
0.35
0.49
b1
0.23
0.32
C
0.50
c1
45° (typ.)
D
17.7
18.1
E
10.00
10.65
e
1.27
e3
16.51
F
7.40
7.60
L
0.40
1.27
S
8° (max.)
Doc ID 10861 Rev 3
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VNQ830P-E
5.2
Package and packing information
SO-28 packing information
Figure 32. SO-28 tube shipment (no suffix)
C
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
B
28
700
532
3.5
13.8
0.6
All dimensions are in mm.
A
Figure 33. SO-28 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
16.4
60
22.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
All dimensions are in mm.
16
4
12
1.5
1.5
7.5
6.5
2
End
Start
Top
cover
tape
No components
Components
No components
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
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VNQ830P-E
6
Revision history
Revision history
Table 17.
Replaced
Document revision history
Date
Revision
Changes
03-May-2006
1
Initial release.
18-Dec-2008
2
Document reformatted and restructured.
Added contents, list of tables and figures.
Added ECOPACK® packages information.
03-May-2010
3
Changed Features list.
Replaced VND830P-E to VND830-E.
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VNQ830P-E
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Doc ID 10861 Rev 3
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