MICROCHIP TC1185

TC1014/TC1015/TC1185
50mA, 100mA and 150mA CMOS LDOs with Shutdown and Reference Bypass
Features
• Extremely Low Supply Current (50µA, Typ.)
• Very Low Dropout Voltage
• Choice of 50mA (TC1014), 100mA (TC1015) and
150mA (TC1016) Output
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Power Saving Shutdown Mode
• Reference Bypass Input for Ultra Low-Noise
Operation
• Over Current and Over Temperature Protection
• Space-Saving 5-Pin SOT-23A Package
• Pin Compatible Upgrades for Bipolar Regulators
Applications
•
•
•
•
•
•
•
Battery Operated Systems
Portable Computers
Medical Instruments
Instrumentation
Cellular/GSM/PHS Phones
Linear Post-Regulator for SMPS
Pagers
Device Selection Table
Part Number
Package
Junction
Temp. Range
TC1014-xxVCT
5-Pin SOT-23A
-40°C to +125°C
TC1015-xxVCT
5-Pin SOT-23A
-40°C to +125°C
TC1185-xxVCT
5-Pin SOT-23A
-40°C to +125°C
NOTE: xx indicates output voltages. Available output
voltages: 1.8, 2.5, 2.6, 2.7, 2.8, 2.85, 3.0, 3.3, 3.6, 4.0, 5.0.
Other output voltages are available. Please contact Microchip
Technology Inc. for details.
Package Type
5-Pin SOT-23A
VOUT
Bypass
5
4
TC1014
TC1015
TC1185
1
2
3
VIN
GND
SHDN
NOTE: 5-Pin SOT-23A is equivalent to the EIAJ (SC-74A)
 2002 Microchip Technology Inc.
DS21335B-page 1
TC1014/TC1015/TC1185
General Description
The TC1014/TC1015/TC1185 are high accuracy
(typically ±0.5%) CMOS upgrades for older (bipolar)
low dropout regulators such as the LP2980. Designed
specifically for battery-operated systems, the devices’
CMOS construction eliminates wasted ground current,
significantly extending battery life. Total supply current
is typically 50µA at full load (20 to 60 times lower than
in bipolar regulators).
The devices’ key features include ultra low noise operation (plus optional Bypass input), fast response to step
changes in load, and very low dropout voltage –
typically 85mV (TC1014); 180mV (TC1015); and
270mV (TC1185) at full load. Supply current is reduced
to 0.5µA (max) and VOUT falls to zero when the
shutdown input is low. The devices incorporate both
over-temperature and over-current protection.
The TC1014/TC1015/TC1185 are stable with an output
capacitor of only 1µF and have a maximum output
current of 50mA, 100mA and 150mA, respectively. For
higher output current regulators, please see the
TC1107/TC1108/TC1173 (IOUT = 300mA) data sheets.
DS21335B-page 2
Typical Application
VIN
1
2
VIN
VOUT
5
VOUT
+
TC1014
TC1015
TC1185
1µF
GND
3
SHDN
Bypass
4
470pF
Reference
Bypass Cap
(Optional)
Shutdown Control
(from Power Control Logic)
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
1.0
ELECTRICAL
CHARACTERISTICS
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage ...........................(-0.3V) to (VIN + 0.3V)
Power Dissipation ............... Internally Limited (Note 7)
Maximum Voltage on Any Pin .........VIN +0.3V to -0.3V
Operating Temperature Range ......-40°C < TJ < 125°C
Storage Temperature ......................... -65°C to +150°C
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VR + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
VIN
Input Operating Voltage
2.7
—
6.0
V
IOUTMAX
Maximum Output Current
50
100
150
—
—
—
—
—
—
mA
VR – 2.5%
VR ±0.5% VR + 2.5%
Device
Test Conditions
Note 1
TC1014
TC1015
TC1185
VOUT
Output Voltage
V
Note 2
TCVOUT
VOUT Temperature Coefficient
—
—
20
40
—
—
ppm/°C
Note 3
∆VOUT/∆VIN
Line Regulation
(VR + 1V) ≤ VIN ≤ 6V
—
0.05
0.35
%
∆VOUT/VOUT Load Regulation
—
—
0.5
0.5
2
3
%
TC1014; TC1015 IL = 0.1mA to IOUTMAX
IL = 0.1mA to IOUTMAX
TC1185
(Note 4)
VIN-VOUT
Dropout Voltage
—
—
—
—
—
2
65
85
180
270
—
—
120
250
400
mV
IL = 100µA
IL = 20mA
IL = 50mA
TC1015; TC1185 IL = 100mA
IL = 150mA (Note 5)
TC1185
IIN
Supply Current (Note 8)
—
50
80
µA
SHDN = VIH, IL = 0
IINSD
Shutdown Supply Current
—
0.05
0.5
µA
SHDN = 0V
PSRR
Power Supply Rejection
Ratio
—
64
—
dB
FRE ≤ 1kHz
IOUTSC
Output Short Circuit Current
—
300
450
mA
VOUT = 0V
∆VOUT/∆PD
Thermal Regulation
—
0.04
—
V/W
Notes 6, 7
TSD
Thermal Shutdown Die
Temperature
—
160
—
°C
∆TSD
Thermal Shutdown
Hysteresis
—
10
—
°C
eN
Output Noise
—
600
—
nV/√Hz
Note
1:
2:
3:
4:
5:
6:
7:
8:
IL = IOUTMAX, F = 10kHz
470pF from Bypass
to GND
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT.
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUT MAX – VOUT MIN)x 10 6
VOUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Apply for Junction Temperatures of -40°C to +85°C.
 2002 Microchip Technology Inc.
DS21335B-page 3
TC1014/TC1015/TC1185
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = VR + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface type
specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input
VIH
SHDN Input High Threshold
45
—
—
%VIN
VIN = 2.5V to 6.5V
VIL
SHDN Input Low Threshold
—
—
15
%VIN
VIN = 2.5V to 6.5V
Note
1:
2:
3:
4:
5:
6:
7:
8:
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT .
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC VOUT = (VOUT MAX – VOUT MIN)x 10 6
VOUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θ JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Apply for Junction Temperatures of -40°C to +85°C.
DS21335B-page 4
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(5-Pin SOT-23A)
Symbol
1
VIN
Description
Unregulated supply input.
2
GND
3
SHDN
Shutdown control input. The regulator is fully enabled when a logic high is applied to this input.
The regulator enters shutdown when a logic low is applied to this input. During shutdown,
output voltage falls to zero, ERROR is open circuited and supply current is reduced to 0.5µA
(max).
4
Bypass
Reference bypass input. Connecting a 470pF to this input further reduces output noise.
5
VOUT
 2002 Microchip Technology Inc.
Ground terminal.
Regulated voltage output.
DS21335B-page 5
TC1014/TC1015/TC1185
3.0
DETAILED DESCRIPTION
3.1
Bypass Input
The TC1014/TC1015/TC1185 are precision fixed
output voltage regulators. (If an adjustable version is
desired, please see the TC1070/TC1071/TC1187 data
sheet.) Unlike bipolar regulators, the TC1014/TC1015/
TC1185 supply current does not increase with load
current. In addition, VOUT remains stable and within
regulation over the entire 0mA to IOUTMAX operating
load current ranges (an important consideration in RTC
and CMOS RAM battery back-up applications).
A 470pF capacitor connected from the Bypass input to
ground reduces noise present on the internal
reference, which in turn significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but results in a longer time period to rated output
voltage when power is initially applied.
Figure 3-1 shows a typical application circuit. The
regulator is enabled any time the shutdown input
(SHDN) is at or above VIH, and shutdown (disabled)
when SHDN is at or below VIL. SHDN may be
controlled by a CMOS logic gate, or I/O port of a
microcontroller. If the SHDN input is not required, it
should be connected directly to the input supply. While
in shutdown, supply current decreases to 0.05µA
(typical), VOUT falls to zero volts.
A 1µF (min) capacitor from VOUT to ground is required.
The output capacitor should have an effective series
resistance greater than 0.1Ω and less than 5Ω. A 1µF
capacitor should be connected from VIN to GND if there
is more than 10 inches of wire between the regulator
and the AC filter capacitor, or if a battery is used as the
power source. Aluminum electrolytic or tantalum
capacitor types can be used. (Since many aluminum
electrolytic capacitors freeze at approximately -30°C,
solid tantalums are recommended for applications
operating below -25°C.) When operating from sources
other than batteries, supply-noise rejection and
transient response can be improved by increasing the
value of the input and output capacitors and employing
passive filtering techniques.
FIGURE 3-1:
TYPICAL APPLICATION
CIRCUIT
VIN
+
1µF
+
Battery
VOUT
TC1014
TC1015
TC1185
VOUT
+
3.2
Output Capacitor
1µF
GND
SHDN
Bypass
470pF
Reference
Bypass Cap
(Optional)
Shutdown Control
(to CMOS Logic or Tie
to VIN if unused)
DS21335B-page 6
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
4.0
THERMAL CONSIDERATIONS
4.1
Thermal Shutdown
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
4.2
Equation 4-1 can be used in conjunction with Equation
4-2 to ensure regulator thermal operation is within
limits. For example:
Given:
VINMAX
VOUTMIN = 2.7V – 2.5%
ILOADMAX = 40mA
Power Dissipation
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
EQUATION 4-1:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
Where:
PD =
VINMAX =
VOUTMIN =
ILOADMAX =
Worst case actual power dissipation
Maximum voltage on VIN
Minimum regulator output voltage
Maximum output (load) current
= 3.0V +10%
TJMAX
= 125°C
TAMAX
= 55°C
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
PD ≈ (VINMAX – VOUTMIN)ILOADMAX
= [(3.0 x 1.1) – (2.7 x .975)]40 x 10–3
= 26.7mW
Maximum allowable power dissipation:
PDMAX = (TJMAX – TAMAX)
θJA
= (125 – 55)
220
The maximum allowable power dissipation (Equation
4-2) is a function of the maximum ambient temperature
(TAMAX), the maximum allowable die temperature
(TJMAX) and the thermal resistance from junction-to-air
(θJA). The 5-Pin SOT-23A package has a θJA of
approximately 220°C/Watt.
In this example, the TC1014 dissipates a maximum of
26.7mW; below the allowable limit of 318mW. In a
similar manner, Equation 4-1 and Equation 4-2 can be
used to calculate maximum current and/or input
voltage limits.
EQUATION 4-2:
4.3
PDMAX = (TJMAX – TAMAX)
θJA
Where all terms are previously defined.
 2002 Microchip Technology Inc.
= 318mW
Layout Considerations
The primary path of heat conduction out of the package
is via the package leads. Therefore, layouts having a
ground plane, wide traces at the pads, and wide power
supply bus lines combine to lower θJA and therefore
increase the maximum allowable power dissipation
limit.
DS21335B-page 7
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Dropout Voltage vs. Temperature
Dropout Voltage vs. Temperature
0.100
0.020
0.016
VOUT = 3.3V
ILOAD = 10mA
0.090
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.018
0.014
0.012
0.010
0.008
0.006
0.004
0.002
CIN = 1µF
COUT = 1µF
-20
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
-40
0.080
0
20
50
TEMPERATURE (°C)
70
0.000
125
VOUT = 3.3V
ILOAD = 50mA
CIN = 1µF
COUT = 1µF
-40
Dropout Voltage vs. Temperature
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
CIN = 1µF
COUT = 1µF
-40
-20
70
50
40
30
20
CIN = 1µF
COUT = 1µF
0.5 11 1.5
1.5 22 2.5
2.5 33 3.5
3.5 44 4.5
4.5 55 5.5
5.5 66 6.5
6.5 77 7.5
7.5
00 0.5
VIN (V)
DS21335B-page 8
0.200
0.150
0.100
0.050
90
CIN = 1µF
COUT = 1µF
-20
0
20
50
TEMPERATURE (°C)
70
125
Ground Current vs. VIN
VOUT = 3.3V
ILOAD = 100mA
80
GND CURRENT (µA)
GND CURRENT (µA)
60
0
VOUT = 3.3V
ILOAD = 150mA
-40
VOUT = 3.3V
ILOAD = 10mA
10
0.250
125
Ground Current vs. VIN
70
125
0.000
0
20
50
TEMPERATURE (°C)
90
80
70
0.300
VOUT = 3.3V
ILOAD = 100mA
DROPOUT VOLTAGE (V)
DROPOUT VOLTAGE (V)
0.160
0
20
50
TEMPERATURE (°C)
Dropout Voltage vs. Temperature
0.200
0.180
-20
70
60
50
40
30
20
CIN = 1µF
COUT = 1µF
10
0
1.5 2 2.5 3 3.5
0 0.5 11 1.5
3.5 44 4.5 55 5.5
5.5 6 6.5 7 7.5
7.5
VIN (V)
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
VOUT vs. VIN
Ground Current vs. VIN
3.5
80
VOUT = 3.3V
ILOAD = 150mA
3
60
40
30
2
1.5
1
20
CIN = 1µF
COUT = 1µF
0.5
CIN = 1µF
COUT = 1µF
10
0
VOUT = 3.3V
ILOAD = 0
2.5
50
VOUT (V)
GND CURRENT (µA)
70
0
0 0.5 1 1.5 2 2.5
2.5 3 3.5
3.5 4 4.5
4.5 5 5.5
5.5 6 6.5
6.5 77 7.5
VIN (V)
1.5 2 2.5 3 3.5
3.5 44 4.5 55 5.5
0 0.5
0.5 11 1.5
5.5 66 6.5
6.5 77
VIN (V)
VOUT vs. VIN
Output Voltage vs. Temperature
3.5
3.0
3.320
OUT == 3.3V
100mA
IVLOAD
ILOAD = 100mA
3.315
3.310
3.305
2.0
VOUT (V)
VOUT (V)
2.5
1.5
3.300
3.295
3.290
1.0
3.285
0.5
0.0
VOUT = 3.3V
ILOAD = 10mA
CIN = 1µF
COUT = 1µF
0
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7
VIN (V)
3.280
3.275
-40
CIN = 1µF
COUT = 1µF
VIN = 4.3V
-20
-10
0
20
40
TEMPERATURE (°C)
85
125
Output Voltage vs. Temperature
3.290
3.288
VOUT = 3.3V
ILOAD = 150mA
VOUT (V)
3.286
3.284
3.282
3.280
3.278
3.276
3.274
CIN = 1µF
COUT = 1µF
VIN = 4.3V
-40
-20
-10
0
20
40
TEMPERATURE (°C)
 2002 Microchip Technology Inc.
85
125
DS21335B-page 9
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Output Voltage vs. Temperature
Output Voltage vs. Temperature
5.025
5.020
4.994
VOUT = 5V
ILOAD = 10mA
4.992
4.990
4.988
5.010
VOUT (V)
VOUT (V)
5.015
5.005
5.000
4.995
4.990
4.985
-40
4.986
4.984
4.982
4.980
4.978
CIN = 1µF
COUT = 1µF
VIN = 6V
4.976
-20
-10
0
20
40
85
VOUT = 5V
ILOAD = 150mA
CIN = 1µF
COUT = 1µF
VIN = 6V
4.974
125
-40
-20
-10
0
20
40
TEMPERATURE (°C)
TEMPERATURE (°C)
80
70
GND CURRENT (µA)
40
30
20
0
-40
-20
40
30
20
CIN = 1µF
COUT = 1µF
VIN = 6V
-40
-10
0
20
40
TEMPERATURE (°C)
85
-10
0
20
40
TEMPERATURE (°C)
Stability Region vs. Load Current
RLOAD = 50Ω
COUT = 1µF
CIN = 1µF
CBYP = 0
1.0
-20
85
125
125
1000
Power Supply Rejection Ratio
-30
-35
COUT = 1µF
to 10µF
-40
100
COUT ESR (Ω)
NOISE (µV/√Hz)
50
0
Output Noise vs. Frequency
10.0
60
10
CIN = 1µF
COUT = 1µF
VIN = 6V
VOUT = 5V
ILOAD = 150mA
-45
10
1
Stable Region
PSRR (dB)
GND CURRENT (µA)
VOUT = 5V
ILOAD = 10mA
50
10
125
Temperature vs. Quiescent Current
Temperature vs. Quiescent Current
70
60
85
-50
IOUT = 10mA
VINDC = 4V
VINAC = 100mVp-p
VOUT = 3V
CIN = 0
COUT = 1µF
-55
-60
-65
0.1
-70
0.1
-75
0.0
0.01K 0.1K
0.01
1K
10K 100K 1000K
FREQUENCY (Hz)
DS21335B-page 10
0 10 20 30 40 50 60 70 80 90 100
LOAD CURRENT (mA)
-80
0.01K 0.1K
1K
10K 100K 1000K
FREQUENCY (Hz)
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO With Bypass Capacitor
Measure Rise Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 448µS
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Rise Time = 184µS
VSHDN
VSHDN
VOUT
VOUT
Measure Fall Time of 3.3V LDO With Bypass Capacitor
Measure Fall Time of 3.3V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA
VIN = 4.3V, Temp = 25°C, Fall Time = 100µS
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 4.3V, Temp = 25°C, Fall Time = 52µS
VSHDN
VOUT
 2002 Microchip Technology Inc.
VSHDN
VOUT
DS21335B-page 11
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 5.0V LDO With Bypass Capacitor
Measure Rise Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 390µS
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Rise Time = 192µS
VSHDN
VSHDN
VOUT
VOUT
Measure Fall Time of 5.0V LDO With Bypass Capacitor
Measure Fall Time of 5.0V LDO Without Bypass Capacitor
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 470pF, ILOAD = 50mA
VIN = 6V, Temp = 25°C, Fall Time = 167µS
Conditions: CIN = 1µF, COUT = 1µF, CBYP = 0pF, ILOAD = 100mA
VIN = 6V, Temp = 25°C, Fall Time = 88µS
VSHDN
VSHDN
VOUT
VOUT
DS21335B-page 12
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Load Regulation of 3.3V LDO
Load Regulation of 3.3V LDO
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
ILOAD = 50mA switched in at 10kHz, VOUT is AC coupled
ILOAD = 100mA switched in at 10kHz, VOUT is AC coupled
ILOAD
ILOAD
VOUT
VOUT
Load Regulation of 3.3V LDO
Line Regulation of 3.3V LDO
Conditions: CIN = 1µF, COUT = 2.2µF, CBYP = 470pF,
VIN = VOUT + 0.25V, Temp = 25°C
Conditions: VIN = 4V, + 1V Squarewave @2.5kHz
ILOAD = 150mA switched in at 10kHz, VOUT is AC coupled
ILOAD
VOUT
VIN
VOUT
CIN = 0µF, COUT = 1µF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
 2002 Microchip Technology Inc.
DS21335B-page 13
TC1014/TC1015/TC1185
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Line Regulation of 5.0V LDO
Thermal Shutdown Response of 5.0V LDO
Conditions: VIN = 6V, + 1V Squarewave @2.5kHz
Conditions: VIN = 6V, CIN = 0µF, COUT = 1µF
VIN
VOUT
VOUT
CIN = 0µF, COUT = 1µF, CBYP = 470pF,
ILOAD = 100mA, VIN & VOUT are AC coupled
ILOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
DS21335B-page 14
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
“1” & “2” = part number code + temperature range and
voltage
(V)
TC1014
Code
TC1015
Code
TC1185
Code
1.8
AY
BY
NY
2.5
A1
B1
N1
2.6
NB
BT
NT
2.7
A2
B2
N2
2.8
AZ
BZ
NZ
2.85
A8
B8
N8
3.0
A3
B3
N3
3.3
A5
B5
N5
3.6
A9
B9
N9
4.0
A0
B0
N0
5.0
A7
B7
N7
“3” represents date code
“4” represents lot ID number
6.2
Taping Form
Component Taping Orientation for 5-Pin SOT-23A (EIAJ SC-74A) Devices
User Direction of Feed
Device
Marking
W
PIN 1
P
Standard Reel Component Orientation
TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package
5-Pin SOT-23A
 2002 Microchip Technology Inc.
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8 mm
4 mm
3000
7 in
DS21335B-page 15
TC1014/TC1015/TC1185
6.3
Package Dimensions
SOT-23A-5
.075 (1.90)
REF.
.071 (1.80)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.020 (0.50)
.012 (0.30)
PIN 1
.037 (0.95)
REF.
.122 (3.10)
.106 (2.70)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.010 (0.25)
.004 (0.09)
10° MAX.
.024 (0.60)
.004 (0.10)
Dimensions: inches (mm)
DS21335B-page 16
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21335B-page17
TC1014/TC1015/TC1185
NOTES:
DS21335B-page18
 2002 Microchip Technology Inc.
TC1014/TC1015/TC1185
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro ® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
 2002 Microchip Technology Inc.
DS21335B-page 19
WORLDWIDE SALES AND SERVICE
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05/01/02
*DS21335B*
DS21335B-page 20
 2002 Microchip Technology Inc.