SSM6P41FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6P41FE ○ Power Management Switches 1.5-V drive Low ON-resistance : Ron = 1.04 Ω (max) (@VGS = -1.5 V) : Ron = 0.67 Ω (max) (@VGS = -1.8 V) : Ron = 0.44 Ω (max) (@VGS = -2.5 V) : Ron = 0.30 Ω (max) (@VGS = -4.5 V) Unit: mm 1.6±0.05 Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±8 V Drain current DC ID -720 Pulse IDP -1440 Drain power dissipation mA PD (Note1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Total rating Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 0.135 mm2 × 6) Marking 6 5 3 4 ES6 1.Source1 4.Source2 2.Gate1 5.Gate2 3.Drain2 6.Drain1 JEDEC ― JEITA ― TOSHIBA 2-2N1D Weight: 3.0 mg (typ.) Equivalent Circuit (top view) 5 4 6 PP3 1 2 0.2±0.05 Symbol 6 0.55±0.05 Characteristic 1 0.12±0.05 Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common) 1.0±0.05 0.5 0.5 1.2±0.05 1.6±0.05 • • 2 5 4 Q1 Q2 3 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. Precaution Let Vth be the voltage applied between gate and source that causes the drain current (ID) to be low (-1mA for the SSM6P41FE). Then, for normal switching operation, VGS(on) must be higher than Vth, and VGS(off) must be lower than Vth. This relationship can be expressed as: VGS(off) < Vth < VGS(on). Take this into consideration when using the device. 1 2009-06-25 SSM6P41FE Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common) Characteristics Symbol Drain-source breakdown voltage Test Conditions Min Typ. Max V (BR) DSS ID = -1 mA, VGS = 0 V -20 ⎯ ⎯ V (BR) DSX ID = -1 mA, VGS = 8 V -12 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS = -20 V, VGS = 0 V ⎯ ⎯ -10 μA Gate leakage current IGSS VGS = ±8 V, VDS = 0 V ⎯ ⎯ ±1 μA Gate threshold voltage Vth VDS = -3 V, ID = -1 mA -0.3 ⎯ -1.0 V Forward transfer admittance |Yfs| VDS = -3 V, ID = -400 mA (Note2) 850 ⎯ ⎯ mS ID = -400 mA, VGS = -4.5 V (Note2) ⎯ 0.25 0.30 ID = -200 mA, VGS = -2.5 V (Note2) ⎯ 0.34 0.44 ID = -100 mA, VGS = -1.8 V (Note2) ⎯ 0.44 0.67 ID = -50 mA, VGS = -1.5 V (Note2) ⎯ 0.55 1.04 Drain-source ON-resistance RDS (ON) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total Gate Charge Qg Gate−Source Charge Qgs Gate−Drain Charge Qgd Switching time Turn-on time Turn-off time Drain-source forward voltage VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, IDS= -720 mA VGS = -4.5 V ⎯ 110 ⎯ ⎯ 28 ⎯ ⎯ 20 ⎯ ⎯ 1.76 ⎯ ⎯ 1.22 ⎯ ⎯ 0.54 ⎯ ton VDD = -10 V, ID = -100 mA ⎯ 11 ⎯ toff VGS = 0 to -2.5 V, RG = 50 Ω ⎯ 38 ⎯ ⎯ 0.85 1.2 VDSF ID = 720 mA, VGS = 0 V (Note2) Ω pF nC ns V Note2: Pulse test Switching Time Test Circuit (a) Test circuit 0 OUT (b) VIN 0V 10% IN RG −2.5V 10 μs VDD = −10 V RG = 50 Ω Duty ≤ 1% VIN: tr, tf < 5 ns (Zout = 50 Ω) Common Source Ta = 25°C VDD 90% −2.5 V RL (c) VOUT VDS (ON) 90% 10% VDD tr ton 2 tf toff 2009-06-25 SSM6P41FE (Q1, Q2 Common) ID – VDS ID – VGS -1.6 -2.5 V -8 V -4.5 V Common Source Ta = 25 °C Common Source VDS = -3 V -1.8 V Drain current ID (A) Drain current ID (A) -1.4 -10 -1.2 -1 -1.5 V -0.8 -0.6 -0.4 VGS=-1.2 V -1 -0.1 Ta = 100 °C 25 °C -0.01 − 25 °C -0.001 -0.2 0 0 -0.2 -0.4 -0.8 -0.6 Drain-source voltage -0.0001 0 -1.0 -1.0 VDS (V) Gate-source voltage RDS (ON) – VGS 1.4 Common Source Common Source Ta = 25°C 1.0 0.8 0.6 25 °C 0.4 Ta = 25°C 1.2 Drain-source ON-resistance RDS (ON) (Ω) Drain-source ON-resistance RDS (ON) (Ω) RDS (ON) – ID 1.4 ID = -100 mA 1.2 -2.0 VGS (V) Ta = 100 °C 0.2 1.0 0.8 -1.5 V 0.6 -1.8 V 0.4 -2.5 V 0.2 VGS = -4.5 V − 25 °C 0 0 0 -2 -4 -6 Gate-source voltage -8 -500 0 VGS (V) -1000 Vth – Ta RDS (ON) – Ta 1 -1.0 Common Source Common Source VDS = -3 V Vth (V) -50 mA / -1.5 V 0.8 -100 mA / -1.8 V 0.6 -200 mA / -2.5 V Gate threshold voltage Drain-source ON-resistance RDS (ON) (Ω) -1500 Drain current ID (mA) 0.4 ID = -400 mA / VGS = -4.5 V 0.2 0 −50 0 50 100 ID = -1 mA -0.5 0 −50 150 Ambient temperature Ta (°C) 0 50 100 150 Ambient temperature Ta (°C) 3 2009-06-25 SSM6P41FE (Q1, Q2 Common) |Yfs| – ID IDR – VDS 10000 10000 Common Source VGS = 0 V Common Source 1000 100 10 D (mA) Ta = 25°C 1000 -1 -10 -100 -1000 IDR G Drain reverse current IDR Forward transfer admittance ⏐Yfs⏐ (mS) VDS = -3 V 100 S Ta =100 °C 10 25 °C 1 −25 °C 0.1 0 -10000 Drain current ID (mA) 0.6 Drain-source voltage C – VDS 1000 0.4 0.2 0.8 VDS (V) Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 °C RG = 50Ω 500 Switching time t (ns) (pF) Capacitance C Ciss 50 Common Source 30 Ta = 25°C f = 1 MHz VGS = 0 V 1 -1 -10 -100 (mW) P D* Drain power dissipation VGS (V) Ta = 25°C VDD = - 10 V VDD = - 16 V -2 Total Gate Charge 2 Qg -1000 -10000 PD* – Ta -6 1 -100 Drain current ID (mA) Common Source 0 -10 -1 VDS (V) ID = -0.72 A 0 ton 10 tr Dynamic Input Characteristic -4 100 Crss Drain-Source voltage -8 tf Coss 10 -0.1 Gate-source voltage toff 1000 100 1.2 t – ID 10000 300 1.0 250 200 150 100 150 0 -40 3 (nC) Mounted on FR4 board. (25.4mm × 25.4mm × 1.6mm , Cu Pad : 0.135 mm2 × 6) -20 *:Total Rating 4 0 20 40 60 80 Ambient temperature 100 120 Ta 140 160 (°C) 2009-06-25 SSM6P41FE RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. 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