TSC TSB1590CXRF

TSB1590
Low Vcesat PNP Transistor
SOT-23
PRODUCT SUMMARY
Pin Definition:
1. Base
2. Emitter
3. Collector
BVCBO
-40V
BVCEO
-25V
IC
-1A
VCE(SAT)
Features
●
●
Ordering Information
Low VCE(SAT) -0.4 @ IC / IB = -150mA / -15mA
Complementary part with TSD2444
Part No.
TSB1590CX RF
Structure
●
●
-0.18V @ IC / IB = -500mA / -50mA
Package
Packing
SOT-23
3Kpcs / 7” Reel
Epitaxial Planar Type
PNP Silicon Transistor
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
Emitter-Base Voltage
VCEO
VEBO
-25
-6
V
V
Collector Current
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
IC
PD
RθJA
-1
225
556
A
mW
o
C/W
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Note: Single pulse, Pw≤350us, Duty≤2%
TJ
TSTG
+150
- 55 to +150
o
o
C
C
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
IC = -50uA, IE = 0
IC = -1mA, IB = 0
BVCBO
BVCEO
-40
-25
---
---
V
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = -50uA, IC = 0
VCB = -35V, IE = 0
BVEBO
ICBO
-6
--
---
--100
V
nA
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
VEB = -6V, IC = 0
IC / IB = -500mA / -50mA
IEBO
*VCE(SAT)
---
--0.18
-100
-0.4
nA
V
Base-Emitter Saturation Voltage
IC / IB = -500mA / -50mA
VCE = -3V, IC = -100mA
VCE = -3V, IC = -800mA
*VBE(SAT)
*hFE 1
*hFE 2
-120
80
-0.9
---
-1.3
560
--
V
fT
--
150
--
MHz
Cob
--
15
--
pF
DC Current Transfer Ratio
Transition Frequency
VCE =-5V, IC=-50mA,
f=100MHz
Output Capacitance
VCB = -10V, f=1MHz
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
1/1
Version: A09
TSB1590
Low Vcesat PNP Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Cutoff Frequency vs. Ic
Figure 5. Power Derating Curve
2/2
Version: A09
TSB1590
Low Vcesat PNP Transistor
SOT-23 Mechanical Drawing
DIM
A
A1
B
C
D
E
F
G
H
I
J
3/3
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX.
0.95 BSC
0.037 BSC
1.9 BSC
0.074 BSC
2.60
3.00
0.102
0.118
1.40
1.70
0.055
0.067
2.80
3.10
0.110
0.122
1.00
1.30
0.039
0.051
0.00
0.10
0.000
0.004
0.35
0.50
0.014
0.020
0.10
0.20
0.004
0.008
0.30
0.60
0.012
0.024
5º
10º
5º
10º
Version: A09
TSB1590
Low Vcesat PNP Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A09