TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 34 @ VGS = 4.5V 3 38 @ VGS = 2.5V 3 44 @ VGS = 2.0V 3 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Notebook PC Application ● Portable Equipment Applications Ordering Information Part No. Package Packing TSM1412CU6 RF SOT-363 3Kpcs / 7” Reel N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V ID 5 A IDM 15 A IS 1.0 A Continuous Drain Current Pulsed Drain Current Continuous Source Current (Diode Conduction) a,b o Maximum Power Dissipation Ta = 25 C PD o Ta = 75 C Operating Junction Temperature Operating Junction and Storage Temperature Range 1.6 W 0.8 TJ +150 o C TJ, TSTG -55 to +150 o C Symbol Limit Thermal Performance Parameter Junction to Case Thermal Resistance RӨJF 45 Junction to Ambient Thermal Resistance (PCB mounted) RӨJA 80 Unit o C/W o C/W Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. 1/4 Version: Preliminary TSM1412 Preliminary 20V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Static Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA BVDSS 20 -- -- V Gate Threshold Voltage VDS = VGS, ID = 250µA VGS(TH) 0.45 0.65 0.85 V Gate Body Leakage VGS = ±8V, VDS = 0V IGSS -- -- ±100 nA Zero Gate Voltage Drain Current VDS = 16V, VGS = 0V IDSS -- -- 1.0 µA On-State Drain Current VDS ≥ 10V, VGS = 4.5V ID(ON) 15 -- -- A -- 28 34 -- 32 38 -- 37 44 VGS = 4.5V, ID = 3A Drain-Source On-State Resistance VGS = 2.5V, ID = 3A RDS(ON) VGS = 2.0V, ID = 3A mΩ Forward Transconductance VDS = 15V, ID = 3A gfs -- 40 -- S Diode Forward Voltage IS = 1.0A, VGS = 0V VSD -- 0.8 1.2 V Qg -- 11 14 Qgs -- 1.5 -- Qgd -- 2.1 -- Ciss -- 900 -- Coss -- 140 -- Crss -- 100 -- td(on) -- 0.53 0.8 tr -- 1.4 2.2 td(off) -- 13.5 20 -- 5.9 9 Dynamic b Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching VDS = 10V, ID = 3A, VGS = 4.5V VDS = 10V, VGS = 0V, f = 1.0MHz nC pF c Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 10V, RL = 10Ω, ID = 1A, VGEN = 4.5V, RG = 6Ω Turn-Off Fall Time tf Notes: a. pulse test: PW ≤300µS, duty cycle ≤2% b. For DESIGN AID ONLY, not subject to production testing. b. Switching time is essentially independent of operating temperature. 2/4 nS Version: Preliminary TSM1412 Preliminary 20V N-Channel MOSFET SOT-363 Mechanical Drawing DIM A A1 A2 b b1 c c1 D E E1 e e1 L θ θ1 3/4 SOT-363 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX. 0.80 1.10 0.031 0.043 0 0.10 0 0.004 0.80 1.00 0.031 0.040 0.15 0.30 0.006 0.012 0.15 0.25 0.006 0.010 0.08 0.22 0.003 0.009 0.08 0.20 0.003 0.008 1.90 2.10 0.074 0.084 2.00 2.20 0.078 0.086 1.15 1.35 0.045 0.055 0.65 BSC 0.025 BSC 1.30 BSC 0.051 BSC 0.26 0.46 0.010 0.018 0º 8º 0º 8º 4º 10º 4º 10º Version: Preliminary Preliminary TSM1412 20V N-Channel MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 4/4 Version: Preliminary