AME, Inc. 600mA CMOS LDO AME8850 n General Description The AME8850 family of positive, linear regulators feature low quiescent current (30µA Typ.) with low dropout voltage, making them ideal for battery applications. The space-saving SOT-25/TSOT-25, SOP-8 & DFN8(3mmx3mmx0.75mm) packages are attractive for " Pocket " and " Hand Held " applications. These rugged devices have both Thermal Shutdown, and Current Fold-back to prevent device failure under the " Worst " operating conditions. n Functional Block Diagram OUT IN Overcurrent Shutdown Thermal Shutdown EN The AME8850 is stable with an output capacitance of 2.2µF or greater. AMP ADJ n Features VREF =1.2V l Very Low Dropout Voltage GND l Guaranteed 600mA Output l Typical 30µA Quiescent Current l Output Voltage Accurate to within 2.5% l Over-Temperature Shutdown l Current Limiting l Short Circuit Current Fold-back l Power-Saving Shutdown Mode n Typical Application EN IN IN l Space-Saving SOT-25/TSOT-25, SOP-8 & C1 DFN-8 (3mmx3mmx0.75mm) Packages 1µF l User Adjustable Output Voltages OUT OUT AME8850 GND ADJ C2 R1 100p C3 2.2µF R2 l Low Temperature Coefficient l All AME's Lead Free Products Meet RoHS Standards n Applications l Instrumentation l Portable Electronics l Wireless Devices l Cordless Phones l PC Peripherals VOUT = 1.2 ( R1/R2 +1 ) C2 is unnecessary if R1 or R2 < 20 K Ohms R R and R use resistance value within 1% accuracy for 1 2 and correct VOUT l Battery Powered Widgets Rev.B.01 1 AME, Inc. 600mA CMOS LDO AME8850 n Pin Configuration SOP-8 Top View 8 7 6 SOT-25 / TSOT-25 Top View AME8850AEHA 5 2 3 4 AME8850AEEV 1. IN 2. GND 2. GND 4. EN 伍 豐 明 年 每 股 E P S挑5.戰ADJ 11 元 伍 豐 6. GND 1 4 1. IN 3. GND AME8850 5 AME8850 3. EN 4. ADJ 5. OUT 1 2 3 7. GND 8. OUT * Die Attach: Conductive Epoxy * Die Attach: Conductive Epoxy DFN-8 (3mmx3mmx0.75mm) Top View 8 7 6 5 AME8850AEVA 1. EN 2. GND 3. GND 4. IN AME8850 5. OUT 1 2 3 4 6. GND 7. GND 8. ADJ * Die Attach: Conductive Epoxy Note: The area enclosed by dashed line represents Exposed Pad and connect to GND. 2 Rev.B.01 AME, Inc. 600mA CMOS LDO AME8850 n Ordering Information AME8850 x x x x xxx x - x Special Feature2 Special Feature1 Output Voltage Number of Pins Package Type Operating Ambient Temperature Range Pin Configuration Pin Configuration A: 1. IN 2. GND 3. GND 4. EN 5. ADJ 6. GND 7. GND 8. OUT (SOP-8) Operating Ambient Temperature Range E: -40OC to 85OC Package Type H: SOP V: DFN E: SOT-2X Number of Pins A: 8 V: 5 Output Voltage Special Feature1 Special Feature 2 (For DFN package only) ADJ: Adjustable Z: Lead Free Lead Free & Y: Low Profile 3: 3x3x0.75(mm)(LxWxH) (For TSOT-25 only ) A: 1. EN 2. GND 3. GND 4. IN 5. OUT 6. GND 7. GND 8. ADJ (DFN-8) A: 1. IN 2. GND (TSOT-25) 3. EN 4. ADJ 5. OUT (SOT-25) Rev.B.01 3 AME, Inc. 600mA CMOS LDO AME8850 n Ordering Information Part Number Marking* Output Voltage Package Operating Ambient Temperature Range AME8850AEHAADJZ 8850 AEHA yyww Adjustable SOP-8 - 40oC to 85oC Adjustable SOT-25 - 40oC to 85oC Adjustable TSOT-25 - 40oC to 85oC Adjustable DFN-8 (3mmx3mmx0.75mm) - 40oC to 85oC AME8850AEEVADJZ BIRww 伍 豐 明 年 每 股 E P S挑 戰 11 元 伍 豐 BIRww AME8850AEEVADJY AME8850AEVAADJZ-3 BIQ yyww Note: yyww & ww represents the date code and pls refer to Date Code Rule page on Package Dimension. * A line on top of the first letter represents lead free plating such as 8850 Please consult AME sales office or authorized Rep./Distributor for package type availability. 4 Rev.B.01 AME, Inc. 600mA CMOS LDO AME8850 n Absolute Maximum Ratings Parameter Maximum Unit Input Voltage -0.3 to 8 V EN Voltage -0.3 to 8 V Output Voltage -0.3 to VIN + 0.3 V Output Current PD / (V IN - VOUT) mA B* ESD Classification Caution: Stress above the listed absolute maximum rating may cause permanent damage to the device. *HBM B:2000V~3999V n Recommended Operating Conditions Parameter Symbol Rating Ambient Temperature Range TA - 40 to 85 o Junction Temperature Range TJ - 40 to 125 o Storage Temperature Range TSTG - 65 to 150 o Rev.B.01 Unit C C C 5 AME, Inc. 600mA CMOS LDO AME8850 n Thermal Information Parameter Package Die Attach Symbol SOP-8 Thermal Resistance* (Junction to Case) θJC SOT-25 / TSOT-25 Internal Power Dissipation SOT-25 / TSOT-25 Unit 60 DFN-8 (3mmx3mmx0.75mm) 伍 豐 明 年 每 股 E P S挑 戰 11 元 伍 豐 SOP-8 Thermal Resistance (Junction to Ambient) Maximum 81 17 o C/W 150 Conductive Epoxy θJA 260 DFN-8 (3mmx3mmx0.75mm) 125 SOP-8 810 SOT-25 / TSOT-25 DFN-8 (3mmx3mmx0.75mm) Solder Iron (10 Sec)** PD 400 mW 800 350 o C * Measure θJC on center of molding compound if IC has no tab. O ** MIL-STD-202G 210F F 6 Rev.B.01 AME, Inc. 600mA CMOS LDO AME8850 n Electrical Specifications TA = 25OC unless otherwise noted Parameter Input Voltage VIN Output Voltage Accuracy VOUT Dropout Voltage Test Condition Symbol VDROP Min IOUT = 1mA Typ Max Units Note 1 7 V -2.5 2.5 % 1.2V < VOUT(nom) <= 2.0V IOUT = 600mA VOUT = VOUT(nom) -2.0% 1400 See chart 2.0V < VOUT(nom) <= 2.8V 2.8V < VOUT(nom) 800 mV 600 Output Current IOUT VOUT > 1.2V 600 Current Limit ILIM VOUT >= 1.2V 600 Short Circuit Current ISC VOUT < 0.8V 300 600 mA Quiescent Current IQ IOUT = 0mA 30 50 µA Ground Pin Current IGND IOUT = 1mA to 600mA 30 Line Regulation REGLINE Load Regulation REGLOAD Over Temperature Shutdown IOUT=1mA VOUT < 2.0V VIN=VOUT+1 to VOUT+2 VOUT >= 2.0V IOUT = 1mA to 600mA OTS mA 800 % 0.02 0.1 % 0.2 1 % 150 o o OTH 30 VO Temperature Coefficient TC 30 Power Supply Ripple Rejection Output Voltage Noise ADJ Reference Voltage EN Input Threshold EN Input Bias Current Shutdown Current PSRR eN CO = 2.2µF f = 10Hz to 100kHz IOUT = 10mA µA 0.15 Over Temperature Hysterisis IOUT = 100mA mA C C ppm/oC f = 1kHz 50 f = 10kHz 20 f = 100kHz 15 Co = 2.2µF 30 µVrms 1.176 1.200 1.224 V VREF dB VEH VIN = 2.7V to 7V 2.0 Vin V VEL VIN = 2.7V to 7V 0 0.4 V IEH VEN = VIN, VIN = 2.7V to 7V 0.1 µA IEL VEN = 0V, VIN = 2.7V to 7V 0.5 µA ISHDN VIN = 5V, VOUT = 0V, VEN < VEL 1 µA 0.5 Note1:VIN(min)=VOUT+VDROPOUT Rev.B.01 7 AME, Inc. 600mA CMOS LDO AME8850 n Detailed Description n Enable The AME8850 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error amplifier, over-current protection, and thermal shutdown. The Enable pin normally floats high. When actively, pulled low, the PMOS pass transistor shuts off, and all internal circuits are powered down. In this state, the quiescent current is less than 1µA. This pin behaves much like an electronic switch. The P-channel pass transistor receives data from the error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference. Over-current Thermal shutdown become ac伍and 豐明 年每 股 E P S挑circuits 戰 11 元 tive when the junction temperature exceeds 150oC, or 伍 豐 the current exceeds 600mA. During thermal shutdown, the output voltage remains low. Normal operation is restored when the junction temperature drops below 120oC. The AME8850 switches from voltage mode to current mode when the load exceeds the rated output current. This prevents over-stress. The AME8850 also incorporates current fold-back to reduce power dissipation when the output is short circuited. This feature becomes active when the output drops below 0.8 volts, and reduces the current flow by 65%. Full current is restored when the voltage exceeds 0.8 volts. n ADJ The ADJ pin is the positive input to the error amplifier which, due to the PMOS pass element inversion, means it is actually the negative input of the LDO feedback loop. The feedback works to keep the voltage at the ADJ pin 1.2V with respect to ground. Since the internal circuitry at the ADJ pin is essentially an ESD protected CMOS gate the input current at the ADJ pin is virtually zero. n External Capacitors The AME8850 is stable with an output capacitor to ground of 2.2µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize Vin. The input capacitor should be at least 0.1µF to have a beneficial effect. All capacitors should be placed in close proximity to the pins. A "Quiet" ground termination is desirable. This can be achieved with a "Star" connection. 8 Rev.B.01 AME, Inc. 600mA CMOS LDO AME8850 n External Resistor Divider Table (contd.) R1 (K Ohm) 0 1 2 3 Rev.B.01 5 6 7 8 9 10 192.00 96.00 64.00 48.00 38.40 32.00 27.43 24.00 21.33 19.20 17.45 16.00 14.77 13.71 12.80 12.00 11.29 10.67 10.11 9.60 9.14 8.73 8.35 8.00 7.68 7.38 7.11 6.86 6.62 6.40 6.19 6.00 5.82 5.65 5.49 5.33 5.19 5.05 216.00 108.00 72.00 54.00 43.20 36.00 30.86 27.00 24.00 21.60 19.64 18.00 16.62 15.43 14.40 13.50 12.71 12.00 11.37 10.80 10.29 9.82 9.39 9.00 8.64 8.31 8.00 7.71 7.45 7.20 6.97 6.75 6.55 6.35 6.17 6.00 5.84 5.68 240.00 120.00 80.00 60.00 48.00 40.00 34.29 30.00 26.67 24.00 21.82 20.00 18.46 17.14 16.00 15.00 14.12 13.33 12.63 12.00 11.43 10.91 10.43 10.00 9.60 9.23 8.89 8.57 8.28 8.00 7.74 7.50 7.27 7.06 6.86 6.67 6.49 6.32 R2(K Ohm)=(1.2*R1(K Ohm))/(Vout-1.2) Vout 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 1.85 1.90 1.95 2.00 2.05 2.10 2.15 2.20 2.25 2.30 2.35 2.40 2.45 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 2.95 3.00 3.05 3.10 4 330 N/A N/A 24.00 12.00 8.00 6.00 4.80 4.00 3.43 3.00 2.67 2.40 2.18 2.00 1.85 1.71 1.60 1.50 1.41 1.33 1.26 1.20 1.14 1.09 1.04 1.00 0.96 0.92 0.89 0.86 0.83 0.80 0.77 0.75 0.73 0.71 0.69 0.67 0.65 0.63 48.00 24.00 16.00 12.00 9.60 8.00 6.86 6.00 5.33 4.80 4.36 4.00 3.69 3.43 3.20 3.00 2.82 2.67 2.53 2.40 2.29 2.18 2.09 2.00 1.92 1.85 1.78 1.71 1.66 1.60 1.55 1.50 1.45 1.41 1.37 1.33 1.30 1.26 72.00 36.00 24.00 18.00 14.40 12.00 10.29 9.00 8.00 7.20 6.55 6.00 5.54 5.14 4.80 4.50 4.24 4.00 3.79 3.60 3.43 3.27 3.13 3.00 2.88 2.77 2.67 2.57 2.48 2.40 2.32 2.25 2.18 2.12 2.06 2.00 1.95 1.89 96.00 48.00 32.00 24.00 19.20 16.00 13.71 12.00 10.67 9.60 8.73 8.00 7.38 6.86 6.40 6.00 5.65 5.33 5.05 4.80 4.57 4.36 4.17 4.00 3.84 3.69 3.56 3.43 3.31 3.20 3.10 3.00 2.91 2.82 2.74 2.67 2.59 2.53 120.00 60.00 40.00 30.00 24.00 20.00 17.14 15.00 13.33 12.00 10.91 10.00 9.23 8.57 8.00 7.50 7.06 6.67 6.32 6.00 5.71 5.45 5.22 5.00 4.80 4.62 4.44 4.29 4.14 4.00 3.87 3.75 3.64 3.53 3.43 3.33 3.24 3.16 144.00 72.00 48.00 36.00 28.80 24.00 20.57 18.00 16.00 14.40 13.09 12.00 11.08 10.29 9.60 9.00 8.47 8.00 7.58 7.20 6.86 6.55 6.26 6.00 5.76 5.54 5.33 5.14 4.97 4.80 4.65 4.50 4.36 4.24 4.11 4.00 3.89 3.79 168.00 84.00 56.00 42.00 33.60 28.00 24.00 21.00 18.67 16.80 15.27 14.00 12.92 12.00 11.20 10.50 9.88 9.33 8.84 8.40 8.00 7.64 7.30 7.00 6.72 6.46 6.22 6.00 5.79 5.60 5.42 5.25 5.09 4.94 4.80 4.67 4.54 4.42 9 AME, Inc. 600mA CMOS LDO AME8850 n External Resistor Divider Table (contd.) Note: If VOUT=1.2V then R1=0 Ω and max value of R2 is 300KΩ. R1 (K Ohm) Vout 1.25 1 2 3 4 6 7 8 9 10 192.00 96.00 64.00 48.00 38.40 32.00 27.43 24.00 21.33 19.20 17.45 16.00 14.77 13.71 12.80 12.00 11.29 10.67 10.11 9.60 9.14 8.73 8.35 8.00 7.68 7.38 7.11 6.86 6.62 6.40 6.19 6.00 5.82 5.65 5.49 5.33 5.19 5.05 216.00 108.00 72.00 54.00 43.20 36.00 30.86 27.00 24.00 21.60 19.64 18.00 16.62 15.43 14.40 13.50 12.71 12.00 11.37 10.80 10.29 9.82 9.39 9.00 8.64 8.31 8.00 7.71 7.45 7.20 6.97 6.75 6.55 6.35 6.17 6.00 5.84 5.68 240.00 120.00 80.00 60.00 48.00 40.00 34.29 30.00 26.67 24.00 21.82 20.00 18.46 17.14 16.00 15.00 14.12 13.33 12.63 12.00 11.43 10.91 10.43 10.00 9.60 9.23 8.89 8.57 8.28 8.00 7.74 7.50 7.27 7.06 6.86 6.67 6.49 6.32 R2(K Ohm)=(1.2*R1(K Ohm))/(Vout-1.2) 24.00 48.00 72.00 96.00 1.30 12.00 24.00 36.00 48.00 1.35伍 豐 明 8.00 16.00 年每 股 E P S挑24.00 戰 11 元32.00 1.40 6.00 12.00 18.00 24.00 伍 豐 1.45 4.80 9.60 14.40 19.20 1.50 4.00 8.00 12.00 16.00 1.55 3.43 6.86 10.29 13.71 1.60 3.00 6.00 9.00 12.00 1.65 2.67 5.33 8.00 10.67 1.70 2.40 4.80 7.20 9.60 1.75 2.18 4.36 6.55 8.73 1.80 2.00 4.00 6.00 8.00 1.85 1.85 3.69 5.54 7.38 1.90 1.71 3.43 5.14 6.86 1.95 1.60 3.20 4.80 6.40 2.00 1.50 3.00 4.50 6.00 2.05 1.41 2.82 4.24 5.65 2.10 1.33 2.67 4.00 5.33 2.15 1.26 2.53 3.79 5.05 2.20 1.20 2.40 3.60 4.80 2.25 1.14 2.29 3.43 4.57 2.30 1.09 2.18 3.27 4.36 2.35 1.04 2.09 3.13 4.17 2.40 1.00 2.00 3.00 4.00 2.45 0.96 1.92 2.88 3.84 2.50 0.92 1.85 2.77 3.69 2.55 0.89 1.78 2.67 3.56 2.60 0.86 1.71 2.57 3.43 2.65 0.83 1.66 2.48 3.31 2.70 0.80 1.60 2.40 3.20 2.75 0.77 1.55 2.32 3.10 2.80 0.75 1.50 2.25 3.00 2.85 0.73 1.45 2.18 2.91 2.90 0.71 1.41 2.12 2.82 2.95 0.69 1.37 2.06 2.74 3.00 0.67 1.33 2.00 2.67 3.05 0.65 1.30 1.95 2.59 3.10 0.63 1.26 1.89 2.53 10 5 120.00 60.00 40.00 30.00 24.00 20.00 17.14 15.00 13.33 12.00 10.91 10.00 9.23 8.57 8.00 7.50 7.06 6.67 6.32 6.00 5.71 5.45 5.22 5.00 4.80 4.62 4.44 4.29 4.14 4.00 3.87 3.75 3.64 3.53 3.43 3.33 3.24 3.16 144.00 72.00 48.00 36.00 28.80 24.00 20.57 18.00 16.00 14.40 13.09 12.00 11.08 10.29 9.60 9.00 8.47 8.00 7.58 7.20 6.86 6.55 6.26 6.00 5.76 5.54 5.33 5.14 4.97 4.80 4.65 4.50 4.36 4.24 4.11 4.00 3.89 3.79 168.00 84.00 56.00 42.00 33.60 28.00 24.00 21.00 18.67 16.80 15.27 14.00 12.92 12.00 11.20 10.50 9.88 9.33 8.84 8.40 8.00 7.64 7.30 7.00 6.72 6.46 6.22 6.00 5.79 5.60 5.42 5.25 5.09 4.94 4.80 4.67 4.54 4.42 Rev.B.01 AME, Inc. 600mA CMOS LDO AME8850 n External Resistor Divider Table R1 (K Ohm) 1 2 3 Rev.B.01 5 6 7 8 9 10 4.92 4.80 4.68 4.57 4.47 4.36 4.27 4.17 4.09 4.00 3.92 3.84 3.76 3.69 3.62 3.56 3.49 3.43 3.37 3.31 3.25 3.20 3.15 3.10 3.05 3.00 2.95 2.91 2.87 2.82 2.78 2.74 2.70 2.67 2.63 2.59 2.56 2.53 5.54 5.40 5.27 5.14 5.02 4.91 4.80 4.70 4.60 4.50 4.41 4.32 4.24 4.15 4.08 4.00 3.93 3.86 3.79 3.72 3.66 3.60 3.54 3.48 3.43 3.37 3.32 3.27 3.22 3.18 3.13 3.09 3.04 3.00 2.96 2.92 2.88 2.84 6.15 6.00 5.85 5.71 5.58 5.45 5.33 5.22 5.11 5.00 4.90 4.80 4.71 4.62 4.53 4.44 4.36 4.29 4.21 4.14 4.07 4.00 3.93 3.87 3.81 3.75 3.69 3.64 3.58 3.53 3.48 3.43 3.38 3.33 3.29 3.24 3.20 3.16 R2(K Ohm)=(1.2*R1(K Ohm))/(Vout-1.2) Vout 3.15 3.20 3.25 3.30 3.35 3.40 3.45 3.50 3.55 3.60 3.65 3.70 3.75 3.80 3.85 3.90 3.95 4.00 4.05 4.10 4.15 4.20 4.25 4.30 4.35 4.40 4.45 4.50 4.55 4.60 4.65 4.70 4.75 4.80 4.85 4.90 4.95 5.00 4 0.62 0.60 0.59 0.57 0.56 0.55 0.53 0.52 0.51 0.50 0.49 0.48 0.47 0.46 0.45 0.44 0.44 0.43 0.42 0.41 0.41 0.40 0.39 0.39 0.38 0.37 0.37 0.36 0.36 0.35 0.35 0.34 0.34 0.33 0.33 0.32 0.32 0.32 1.23 1.20 1.17 1.14 1.12 1.09 1.07 1.04 1.02 1.00 0.98 0.96 0.94 0.92 0.91 0.89 0.87 0.86 0.84 0.83 0.81 0.80 0.79 0.77 0.76 0.75 0.74 0.73 0.72 0.71 0.70 0.69 0.68 0.67 0.66 0.65 0.64 0.63 1.85 1.80 1.76 1.71 1.67 1.64 1.60 1.57 1.53 1.50 1.47 1.44 1.41 1.38 1.36 1.33 1.31 1.29 1.26 1.24 1.22 1.20 1.18 1.16 1.14 1.13 1.11 1.09 1.07 1.06 1.04 1.03 1.01 1.00 0.99 0.97 0.96 0.95 2.46 2.40 2.34 2.29 2.23 2.18 2.13 2.09 2.04 2.00 1.96 1.92 1.88 1.85 1.81 1.78 1.75 1.71 1.68 1.66 1.63 1.60 1.57 1.55 1.52 1.50 1.48 1.45 1.43 1.41 1.39 1.37 1.35 1.33 1.32 1.30 1.28 1.26 3.08 3.00 2.93 2.86 2.79 2.73 2.67 2.61 2.55 2.50 2.45 2.40 2.35 2.31 2.26 2.22 2.18 2.14 2.11 2.07 2.03 2.00 1.97 1.94 1.90 1.87 1.85 1.82 1.79 1.76 1.74 1.71 1.69 1.67 1.64 1.62 1.60 1.58 3.69 3.60 3.51 3.43 3.35 3.27 3.20 3.13 3.06 3.00 2.94 2.88 2.82 2.77 2.72 2.67 2.62 2.57 2.53 2.48 2.44 2.40 2.36 2.32 2.29 2.25 2.22 2.18 2.15 2.12 2.09 2.06 2.03 2.00 1.97 1.95 1.92 1.89 4.31 4.20 4.10 4.00 3.91 3.82 3.73 3.65 3.57 3.50 3.43 3.36 3.29 3.23 3.17 3.11 3.05 3.00 2.95 2.90 2.85 2.80 2.75 2.71 2.67 2.62 2.58 2.55 2.51 2.47 2.43 2.40 2.37 2.33 2.30 2.27 2.24 2.21 11 AME, Inc. 600mA CMOS LDO AME8850 Ground Current vs. Input Voltage Load Step (1mA-600mA) Vo(10mV/DIV) 45 85 OC 35 30 25 Output CL=2.2µF CIN=2.2µF O 25 C 20 15 10 伍 豐 明 年 每 股 E P S挑 戰 11 元 伍 豐 5 0 0 1 2 3 4 5 6 7 8 IL(200mA/DIV) Ground Current (µ A) 40 ILoad 0 Input Voltage (V) TIME (20mS/DIV) Drop Out Voltage vs. Output Voltage Power Supply Rejection Ratio 0 1400 Top to Bottom ILOAD=600mA ILOAD=500mA ILOAD=400mA ILOAD=300mA ILOAD=200mA ILOAD=100mA 1000 800 600 -10 400 -40 -50 10mA 100mA -70 1 2 3 4 5 6 10 1mA 1K 100K 10M Frequency (Hz) Safe Operating Area Noise Measurement 8850AEHA 8850AEVA 600 Vo (1mV DIV) 8850AEEV 100 10 0.1 100 µ A 100 µ A -80 Output Voltage (V) Output Current (mA) -30 -60 200 1.0 Input-Output Voltage Differential (V) 12 100mA CL=2.2µF Tantalum Tantalum C BYP =0 -20 PSRR (dB) Drop Out Voltage (mV) 1200 CL=2.2µF No Filter 8.0 TIME (20ms/DIV) Rev.B.01 AME, Inc. 600mA CMOS LDO AME8850 Current Limit Response I OUT (200mA/DIV) VOUT (1V/DIV) Overtemperature Shutdown 0 IOUT (200mA/DIV) VOUT (1V/DIV) R LOAD=6.6 Ω 0 TIME (0.5Sec/DIV) TIME (2mS/DIV) Short Circuit Response Enable (2V/DIV) Chip Enable Transient Response CL=2µF RL=10Ω 0 Output (1V/DIV) CLOAD=2.2µF CIN=1µF RLOAD<100mΩ VOUT (1V/DIV) IOUT (200mV/DIV) CLOAD=2.2µF CIN=1.0µF RLOAD=3.3Ω VOUTNOM=3.3V TIME (2mS/DIV) 0 TIME (1mS/DIV) VOUT (10mV/DIV) VIN(1V/DIV) Line Transient Response CLOAD=2.2µF ILOAD=1mA VOUTDC=3.3V VINDC=4.5V TIME (200mS/DIV) Rev.B.01 13 AME, Inc. 600mA CMOS LDO AME8850 n Date Code Rule Marking Date Code Year A A A W W xxx0 A A A W W xxx1 A A A W W xxx2 A A A W W 伍 豐 明 年 每 股 E P S挑 戰 11 元 A A A伍 豐 W W xxx3 xxx4 A A A W W xxx5 A A A W W xxx6 A A A W W xxx7 A A A W W xxx8 A A A W W xxx9 n Tape and Reel Dimension DFN-8 (3mmx3mmx0.75mm) P PIN 1 W AME AME Carrier Tape, Number of Components Per Reel and Reel Size 14 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size DFN-8 (3x3x0.75mm) 12.0±0.1 mm 4.0±0.1 mm 3000pcs 330±1 mm Rev.B.01 AME, Inc. 600mA CMOS LDO AME8850 n Tape and Reel Dimension SOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm TSOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size Rev.B.01 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size TSOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm 15 AME, Inc. 600mA CMOS LDO AME8850 n Tape and Reel Dimension SOP-8 P PIN 1 伍 豐 明 年 每 股 E P S挑 戰 11 元 伍 豐 W AME AME Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOP-8 12.0±0.1 mm 4.0±0.1 mm 2500pcs 330±1 mm n Package Dimension SOP-8 Top View Side View SYMBOLS E MAX MIN MAX A 1.35 1.75 0.05315 0.0689 A1 0.10 0.30 0.00394 0.01181 A2 D L θ Front View A A2 16 A1 e B 1.473 REF 0.05799 REF B 0.33 0.51 0.01299 0.02008 C 0.19 0.25 0.00748 0.00984 D 4.80 5.33 0.18898 0.20984 E 3.80 4.00 0.14961 0.15748 1.27 BSC e 7o(4X) INCHES MIN C H MILLIMETERS 0.05000 BSC L 0.40 1.27 0.01575 0.05000 H 5.80 6.30 0.22835 0.24803 y - 0.10 - 0.00394 θ 0o 8o 0o 8o Rev.B.01 AME, Inc. 600mA CMOS LDO AME8850 n Package Dimension SOT-25 Top View SYMBOLS Side View MIN D L θ1 MAX 0.0472REF 0.15 0.0000 0.0059 b 0.30 0.55 0.0118 0.0217 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 H θ1 Front View MIN 0.00 1.90 BSC 2.60 0.07480 BSC 3.00 0.37BSC L e INCHES A1 e S1 MAX 1.20REF A E H MILLIMETERS 0o 0.10236 0.11811 0.0146BSC 10o 0o 10 o 0.95BSC 0.0374BSC MILLIMETERS INCHES A1 A S1 b TSOT-25 SYMBOLS Top View E L D H MIN MAX MIN MAX A+A1 0.90 1.25 0.0354 0.0492 b 0.30 0.50 0.0118 0.0197 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 Side View 1.90 BSC e H θ1 S1 e 2.40 S1 3.00 0.35BSC L θ1 0.07480 BSC 0 o 10 0.95BSC 0.09449 0.11811 0.0138BSC o 0o 10o 0.0374BSC b Rev.B.01 A1 A Front View 17 AME, Inc. 600mA CMOS LDO AME8850 n Package Dimension DFN-8 (3mmx3mmx0.75mm) D SYMBOLS 伍 豐 明 年 每 股 E P S挑 戰 11 元 伍 豐 E TOP VIEW A G1 MILLIMETERS INCHES MIN MAX MIN MAX A 0.700 0.800 0.028 0.031 D 2.900 3.100 0.114 0.122 E 2.900 3.100 0.114 0.122 e 0.600 0.700 0.024 0.028 D1 2.200 2.400 0.087 0.094 E1 1.400 1.600 0.055 0.063 b 0.200 0.320 0.008 0.013 L 0.375 0.575 0.015 0.023 G 0.153 0.253 0.0060 0.010 G1 0.000 0.050 0.0000 0.002 G REAR VIEW b e L E1 PIN #1 D1 BOTTOM VIEW 18 Rev.B.01 www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , Auguest 2007 Document: 2095-DS8850-B.01 Corporate Headquarter U.S.A. (Subsidiary) AME, Inc. Analog Microelectronics, Inc. 2F, 302 Rui-Guang Road, Nei-Hu District 3100 De La Cruz Blvd., Suite 201 Taipei 114, Taiwan, R.O.C. Tel : 886 2 2627-8687 Santa Clara, CA. 95054-2438 Tel : (408) 988-2388 Fax: 886 2 2659-2989 Fax : (408) 988-2489