AP2310GN
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Small Package Outline
D
▼ Surface Mount Device
BVDSS
60V
RDS(ON)
90mΩ
ID
3A
S
SOT-23
Description
G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
60
V
±20
V
3
3
A
3
2.3
A
10
A
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1,2
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
1.38
W
Linear Derating Factor
0.01
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
90
℃/W
200910041
AP2310GN
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
60
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.05
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3A
-
-
90
mΩ
VGS=4.5V, ID=2A
-
-
120
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=5V, ID=3A
-
5
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=48V ,VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=3A
-
6
10
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
2
VGS=0V, ID=250uA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3
-
nC
VDS=30V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
16
-
ns
tf
Fall Time
RD=30Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
490
780
pF
Coss
Output Capacitance
VDS=25V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
40
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=1.2A, VGS=0V
-
-
1.2
V
trr
Reverse Recovery Time
IS=3A, VGS=0V,
-
25
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
26
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
AP2310GN
10
10
8
ID , Drain Current (A)
ID , Drain Current (A)
8
10V
7.0V
5.0V
4.5V
T A = 150 o C
10V
7.0V
5.0V
4.5V
o
T A =25 C
6
V G = 3.0 V
4
2
6
V G = 3.0 V
4
2
0
0
0
1
2
3
4
0
5
1
2
3
4
5
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
105
2.0
ID=2A
99
ID=3A
V G =10V
1.8
o
T A =25 C
Normalized R DS(ON)
RDS(ON) (mΩ )
1.6
93
87
1.4
1.2
1.0
81
0.8
0.6
75
2
4
6
8
-50
10
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
3
Normalized VGS(th) (V)
1.2
IS(A)
2
T j =150 o C
T j =25 o C
1
1.0
0.8
0.6
0.4
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP2310GN
f=1.0MHz
1000
ID=3A
12
C iss
V DS = 30 V
V DS =38V
V DS =48V
10
C (pF)
VGS , Gate to Source Voltage (V)
14
8
100
6
C oss
C rss
4
2
10
0
0
3
6
9
12
1
15
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100.000
Normalized Thermal Response (Rthja)
Duty factor=0.5
10.000
100us
1.000
ID (A)
1ms
10ms
0.100
100ms
1s
DC
T A =25 o C
Single Pulse
0.010
0.2
0.1
0.1
0.05
PDM
0.01
t
T
Single Pulse
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270℃
℃ /W
0.001
0.0001
0.001
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
1000
t , Pulse Width (s)
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q