Central CBR50-020P SERIES TM Semiconductor Corp. 50 AMP SILICON BRIDGE RECTIFIER 200 thru 1000 VOLTS DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR50-020P series types are silicon single phase full wave bridge rectifiers designed for general purpose applications. The molded epoxy case has a built in metal baseplate for heat sink mounting. MARKING CODE: FULL PART NUMBER CASE FP MAXIMUM RATINGS (TA=25°C) SYMBOL Peak Repetitive Reverse Voltage Average Forward Current (TC=55°C) Peak Forward Surge Current CBR50- CBR50- CBR50060P 080P 100P UNITS VRRM 200 400 600 800 1000 V VR 200 400 600 800 1000 V VR(RMS) 140 280 420 560 700 V DC Blocking Voltage RMS Reverse Voltage CBR50- CBR50040P 020P IO 50 A IFSM 400 A TJ, Tstg -65 to +150 °C Thermal Resistance ΘJC 1.5 °C/W RMS Isolation Voltage (case to lead) Viso 2500 Vac Operating and Storage Junction Temperature ELECTRICAL CHARACTERISTICS PER DIODE (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX UNITS IR VR=Rated VRRM, TC=25°C 5.0 µA IR VR=Rated VRRM, TC=125°C 500 µA VF IF=25A 1.1 V CJ VR=4.0V, f=1.0MHz 300 pF R0 (31-August 2004) Central TM CBR50-020P SERIES Semiconductor Corp. 50 AMP SILICON BRIDGE RECTIFIER 200 thru 1000 VOLTS CASE FP - MECHANICAL OUTLINE SYMBOL MARKING CODE: FULL PART NUMBER A B C D E F (DIA.) G H J K L M (DIA.) DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 1.115 1.135 28.32 28.83 0.692 0.732 17.58 18.59 1.115 1.135 28.32 28.83 0.542 0.582 13.77 14.78 0.632 0.672 16.05 17.07 0.200 0.220 5.08 5.59 0.632 0.672 16.05 17.07 0.740 0.840 18.80 21.34 0.290 0.310 7.37 7.87 0.030 0.034 0.76 0.86 0.250 6.35 0.940 2.39 CASE FP (REV:R1) R0 (31-August 2004)