Central CMCS5062 CMCS5064 CMCS5066 Semiconductor Corp. SURFACE MOUNT SILICON CONTROLLED RECTIFIER Peak Repetitive Off-State Voltage Peak Repetitive Reverse Voltage RMS On-State Current Average On-State Current (TC=67°C) Power Dissipation DESCRIPTION: The CENTRAL SEMICONDUCTOR CMCS5062, CMCS5064 and CMCS5066 types are epoxy molded PNPN Silicon Controlled Rectifiers manufactured in an SC-59 case, designed for control systems and sensing circuit applications. MARKING CODES: CMCS5062: CP2B CMCS5064: CP2D CMCS5066: CP2F SC-59 CASE MAXIMUM RATINGS: (TA=25°C) TM SYMBOL CMCS5062 CMCS5064 CMCS5066 VDRM VRRM UNITS 200 400 600 V 200 400 600 V IT(RMS) 0.8 A IT(AV) 0.51 A PD 350 mW TJ,Tstg -65 to +150 °C ΘJA 357 °C/W Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) CMCS5062 CMCS5064 CMCS5066 SYMBOL MIN MIN TEST CONDITIONS MIN MAX MAX MAX UNITS IDRM VD=Rated VDRM, RGK=1KΩ 1.0 1.0 1.0 µA IRRM VD=Rated VDRM, RGK=1KΩ 1.0 1.0 1.0 µA IDRM VD=Rated VDRM, RGK=1KΩ, TC=125°C 50 50 50 µA IRRM VD=Rated VDRM, RGK=1KΩ, TC=125°C 50 50 50 µA VT IT=1.2A 1.7 1.7 1.7 V IGT VD=7.0V, RL=100Ω, RGK=1KΩ 200 200 200 µA VGT VD=7.0V, RL=100Ω, RGK=1KΩ 0.8 0.8 0.8 V VGD VD= Rated VDRM, RL=100Ω, TC=125°C IH VD=7.0, RGK=1KΩ tON VD= Rated VDRM, IGT=1.0mA, RGK=1.0Ω, di/dt=6.0A/µs 0.1 0.1 0.1 V 5.0 5.0 5.0 mA 2.8 TYP 2.8 TYP 2.8 TYP µs R0 (7-March 2005) Central TM CMCS5062 CMCS5064 CMCS5066 Semiconductor Corp. SURFACE MOUNT SILICON CONTROLLED RECTIFIER MECHANICAL OUTLINE - SC-59 LEAD CODE: 1) CATHODE 2) GATE 3) ANODE MARKING CODES: CMCS5062: CP2B CMCS5064: CP2D CMCS5066: CP2F R0 (7-March 2005)