Central CMFSH-3i TM Semiconductor Corp. DUAL, ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFSH-3i consists of two electrically isolated silicon Schottky diodes packaged in an epoxy molded SOT-143 surface mount case. This devices is designed fast switching applications requiring a low forward voltage drop. MARKING CODE: C3I SOT-143 CASE MAXIMUM RATINGS: (TA=25 °C) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 30 V Continuous Forward Current IF 100 mA Peak Repetitive Forward Current IFRM 200 mA Forward Surge Current, tp=10ms IFSM 750 mA Power Dissipation PD 350 mW Operating and Storage Junction Temperature TJ, Tstg Thermal Resistance ΘJA -65 to +150 °C 357 °C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25 °C unless otherwise noted) TEST CONDITIONS MIN TYP MAX SYMBOL IR IR BVR VF VF VF CT trr VR=25V VR=25V, TA=100 °C IR=100µA IF=2.0mA 500 nA 25 100 µA 0.29 0.33 V V 30 V IF=15mA IF=100mA 0.40 0.45 0.74 1.00 VR=1.0V, f=1.0MHz 7.0 IF=IR=10mA, Irr=1.0mA, RL=100Ω UNITS 90 V pF 5.0 ns R3 (3-December 2003) Central TM CMFSH-3i Semiconductor Corp. DUAL, ISOLATED SILICON SCHOTTKY DIODES SOT-143 CASE - MECHANICAL OUTLINE LEAD CODE: 1) CATHODE D1 2) CATHODE D2 3) ANODE D2 4) ANODE D1 MARKING CODE: C3I R3 (3-December 2003)