CENTRAL CMLM3405

Central
CMLM3405
MULTI DISCRETE MODULE ™
SURFACE MOUNT
HIGH CURRENT
LOW VCE (SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
TM
TM
Semiconductor Corp.
DESCRIPTION:
The Central Semiconductor CMLM3405 is a single
NPN Transistor and Schottky Diode packaged in a
space saving SOT-563 case and designed for small
signal general purpose applications where size and
operational efficiency are prime requirements.
• Complementary Device: CMLM7405
• Combination High Current Low VCE (SAT)
Transistor and Low VF Schottky Diode.
SOT-563 CASE
MARKING CODE: C53
MAXIMUM RATINGS (SOT-563 Package): (TA=25°C)
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
SYMBOL
PD
350
UNITS
mW
TJ, Tstg
ΘJA
-65 to +150
357
°C
°C/W
MAXIMUM RATINGS Q1: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Peak)
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
40
25
6.0
1.0
1.5
UNITS
V
V
V
A
A
MAXIMUM RATINGS D1: (TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current, tp ≤ 1ms
Forward Surge Current, tp = 8ms
SYMBOL
VRRM
IF
IFRM
IFSM
40
500
3.5
10
UNITS
V
mA
A
A
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=40V
IEBO
VEB=6.0V
BVCBO
IC=100µA
40
BVCEO
IC=10mA
25
BVEBO
IE=100µA
6.0
VCE(SAT)
IC=50mA, IB=5.0mA
VCE(SAT)
IC=100mA, IB=10mA
VCE(SAT)
IC=200mA, IB=20mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=800mA, IB=80mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=800mA, IB=80mA
VBE(ON)
VCE=1.0V, IC=10mA
TYP
MAX
100
100
20
35
75
130
200
250
50
75
150
250
400
450
1.1
0.9
UNITS
nA
nA
V
V
V
mV
mV
mV
mV
mV
mV
V
V
R0 (23-March 2005)
CMLM3405
Central
MULTI DISCRETE MODULE ™
TM
SURFACE MOUNT
HIGH CURRENT
LOW VCE (SAT) SILICON NPN TRANSISTOR
AND
LOW VF SILICON SCHOTTKY DIODE
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS Q1 (continued)
SYMBOL
TEST CONDITIONS
hFE
VCE=1.0V, IC=10mA
hFE
VCE=1.0V, IC=100mA
hFE
VCE=1.0V, IC=500mA
hFE
VCE=1.0V, IC=1.0A
fT
VCE=10V, IC=50mA, f=100MHz
Cob
VCB=10V, IE=0, f=1.0MHz
MIN
100
100
100
50
100
MAX
300
10
ELECTRICAL CHARACTERISTICS D1 (TA=25°C)
IR
VR= 10V
IR
VR= 30V
BVR
IR= 500µA
VF
IF= 100µA
VF
IF= 1.0mA
VF
IF= 10mA
VF
IF= 100mA
VF
IF= 500mA
CT
VR= 1.0V, f=1.0 MHz
UNITS
20
100
40
0.13
0.21
0.27
0.35
0.47
50
MHz
pF
µA
µA
V
V
V
V
V
V
pF
SOT-563 - MECHANICAL OUTLINE
D
E
E
A
6
5
4
B
G
1
C
F
3
2
H
R0
MARKING CODE: C53
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) CATHODE D1
4) ANODE D1
5) ANODE D1
6) COLLECTOR Q1
R0 (23-March 2005)