Central CMPT5551HC SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5551HC type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: 1FHC SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage V VEBO 6.0 Continuous Collector Current IC 1.0 A Power Dissipation PD 350 mW TJ,Tstg -65 to +150 °C ΘJA 357 °C/W Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL MAX UNITS ICBO ICBO VCB=120V VCB=120V, TA=100°C 50 nA 50 µA IEBO BVCBO VEB=4.0V IC=100µA 50 nA BVCEO IC=1.0mA IE=10µA BVEBO VCE(SAT) VBE(SAT) VBE(SAT) hFE IC=50mA, IB=5.0mA VCE=5.0V, IC=1.0mA hFE VCE=5.0V, VCE=5.0V, hFE hFE fT Cob 180 V 160 V 6.0 IC=10mA, IB=1.0mA IC=50mA, IB=5.0mA IC=10mA, IB=1.0mA VCE(SAT) TYP IC=10mA IC=50mA VCE=10V, IC=1.0A VCE=10V, IC=10mA, f=100MHz VCB=10V, IE=0, f=1.0MHz V 0.15 V 0.20 V 1.00 V 1.00 V 80 80 250 30 10 100 MHz 15 pF R0 (28-January 2005) Central TM Semiconductor Corp. CMPT5551HC SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR SOT-23 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR MARKING CODE: 1FHC R0 (28-January 2005)