PROCESS CP753V Small Signal Transistors PNP - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 7.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS Emitter 2 Bonding Pad Area 7.9 x 9.5 MILS Top Side Metalization Al-Si 30,000Å Back Side Metalization Au 12,000Å GEOMETRY GROSS DIER PER 5 INCH WAFER 3,878 PRINCIPAL DEVICE TYPES CZT953 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (23- September 2005)