PROCESS CPD64 Central Low Leakage Diode TM Semiconductor Corp. Low Leakage Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 17.5 x 17.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 8.0 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 6,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 36,890 PRINCIPAL DEVICE TYPES CMPD3003 1N3595 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (1-August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD64 Typical Electrical Characteristics R2 (1-August 2002)