PROCESS CPD65 Central Low Leakage Diode TM Semiconductor Corp. Picoampere Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 9.5 X 9.5 MILS Die Thickness 7.5 MILS Anode Bonding Pad Area 2.5 MILS DIAMETER Top Side Metalization Al - 30,000Å Back Side Metalization Au - 13,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 125,200 PRINCIPAL DEVICE TYPES BAV45 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (1-August 2002) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD65 Typical Electrical Characteristics R1 (1-August 2002)