PROCESS CPD81 Schottky Rectifier 5 Amp Schottky Barrier Rectifier Chip PROCESS DETAILS Die Size 72.5 x 72.5 MILS Die Thickness 11.8 MILS Anode Bonding Pad Area 63.8 x 63.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 2,178 PRINCIPAL DEVICE TYPES CZSH5-40 CZSH10-40CN (Dual Chip) 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 (13 -August 2004) PROCESS CPD81 Typical Electrical Characteristics 10 1 0.1 0.01 0 0.1 0.2 0.3 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com 0.4 0.5 0.6 R0 (13 -August 2004)