PROCESS CPS041 Silicon Controlled Rectifier Sensitive Gate SCR Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 41 x 41 MILS Die Thickness 8.7 MILS ± 0.6 MILS Cathode Bonding Pad Area 18 x 8 MILS Gate Bonding Pad Area 7.1 x 7.1 MILS Top Side Metalization Al - 45,000Å Back Side Metalization Au - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 6,474 PRINCIPAL DEVICE TYPES CS18D BRX49 CS92D CS89M 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005) PROCESS CPS041 Typical Electrical Characteristics 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R1 (19 -May 2005)