PROCESS CPZ25 Zener Diodes 1.5 W Zener Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 33.5 X 33.5 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 23 X 23 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 10,070 PRINCIPAL DEVICE TYPES 1N5913B THRU 1N5956B ANODE BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R0 R0 (20-June 2002)