Central CTLSH1-40M832D SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES Top View Bottom View TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLSH1-40M832D Dual, Isolated, Low VF Schottky diodes are designed for applications where small size and operational effciency are the prime requirements. With a maximum power dissipation of 1.65W, and a very small package footprint (approximately equal to the SOT-23), this leadless package design is capable of dissipating up to 4 times the power of similar devices in comparable sized surface mount packages. FEATURES: • Dual Chip Device • High Current (IF=1.0A) • Low Forward Voltage Drop (VF=0.55V MAX @ 1.0A) TLM832D CASE MARKING CODE: CFA • High Thermal Efficiency • Small TLM 3x2mm case APPLICATIONS: • DC/DC Converters • Reverse Battery Protection MAXIMUM RATINGS: (TA=25°C) • Battery Powered Portable Equipment SYMBOL Peak Repetitive Reverse Voltage UNITS VRRM 40 V IF 1.0 A Peak Repetitive Forward Current, tp ≤ 1ms IFRM 3.5 A Forward Surge Current, tp = 8ms IFSM 10 A PD 1.65 W* TJ, Tstg -65 to +150 °C ΘJA 75.8 °C/W* Continuous Forward Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: SYMBOL TEST CONDITIONS IR IR (TA=25°C unless otherwise noted) MAX UNITS VR= 5V VR= 8V 10 μA 20 μA IR BVR VR= 15V IR= 100μA 50 μA VF IF= 10mA IF= 100mA 0.29 V VF VF VF CJ MIN TYP 40 V IF= 500mA IF= 1.0A VR= 4.0V, f=1.0MHz *FR-4 Epoxy PCB with copper mounting pad area of 54mm2 0.36 V 0.45 V 0.55 50 V pF R2 (27-April 2006) Central TM CTLSH1-40M832D SURFACE MOUNT DUAL, HIGH CURRENT, LOW VF SILICON SCHOTTKY DIODES Semiconductor Corp. TLM832D CASE - MECHANICAL OUTLINE Suggested mounting pad layout for maximum power dissipation (Dimensions in mm) For standard mounting refer to TLM832D Package Details LEAD CODE: 1) 2) 3) 4) 5) 6) 7) 8) ANODE D1 ANODE D1 ANODE D2 ANODE D2 CATHODE D2 CATHODE D2 CATHODE D1 CATHODE D1 MARKING CODE: CFA R2 (27-April 2006)