Central CXTA62 TM Semiconductor Corp. SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA62 is a PNP Silicon Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL UNITS Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCES 20 V Emitter-Base Voltage VEBO 10 V Collector Current IC 500 Power Dissipation PD 1.2 mA W TJ,Tstg -65 to +150 °C ΘJA 104 °C/W Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C) SYMBOL TEST CONDITIONS ICBO IEBO VCB=15V VEB=10V BVCES IC=100µA IC=100µA BVCBO VCESAT VBEON IC=10mA, IB=10µA VCE=5.0V, IC=10mA hFE VCE=5.0V, IC=10mA MIN TYP MAX UNITS 100 nA 100 nA 20 V 20 V 1.0 V 1.4 V 20K R2 (20-May 2004) Central TM Semiconductor Corp. CXTA62 SURFACE MOUNT PNP SILICON DARLINGTON TRANSISTOR SOT-89 CASE - MECHANICAL OUTLINE BOTTOM VIEW LEAD CODE: 1) EMITTER 2) COLLECTOR 3) BASE MARKING CODE: FULL PART NUMBER DIMENSIONS INCHES MILLIMETERS MAX MIN MAX SYMBOL MIN A 0.055 0.067 1.40 1.70 B 4° 4° C 0.014 0.018 0.35 0.46 D 0.173 0.185 4.40 4.70 E 0.064 0.074 1.62 1.87 F 0.146 0.177 3.70 4.50 G 0.090 0.106 2.29 2.70 H 0.028 0.051 0.70 1.30 J 0.014 0.019 0.36 0.48 K 0.017 0.023 0.44 0.58 L 0.059 1.50 M 0.118 3.00 SOT-89 (REV: R4) R2 (20-May 2004)