CZT250K SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT250K type is an NPN silicon Darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) 50 Collector-Emitter Voltage SYMBOL VCBO VCEO 25 V Emitter-Base Voltage VEBO 10 V Collector Current IC PD 1.0 A 2.0 W Collector-Base Voltage Power Dissipation Operating and Storage Junction Temperature TJ,Tstg -65 to +150 ΘJA Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN VCB=30V BVCEO BVEBO VCE(SAT) VBE(ON) hFE °C 62.5 SYMBOL ICBO BVCBO UNITS V °C/W MAX 100 UNITS nA IC=10µA IC=10mA 50 25 V IE=100µA IC=100mA, IB=0.1mA VCE=5.0V, IC=100mA 10 V hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=100mA 250,000 fT VCE=5.0V, IC=10mA, f=100MHz 125 V 1.5 V 2.0 V 250,000 MHz R2 ( 17-June 2004) Central TM CZT250K Semiconductor Corp. SURFACE MOUNT NPN EXTREMELY HIGH hFE SILICON DARLINGTON TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R2 ( 17-June 2004)