Central CZT3120 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT3120 NPN Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers, DC-DC converters, and general fast switching applications. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS (TA=250C) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation UNITS 120 V VCEO 70 V VEBO 7.0 V IC PD 3.0 A 2.0 W TJ, Tstg -65 to +150 Operating and Storage Junction Temperature Thermal Resistance ΘJA 0 0 62.5 C C/W ELECTRICAL CHARACTERISTICS(TA=250C) SYMBOL TEST CONDITIONS ICBO IEBO VCB=80V VEB=5.0V BVCBO IC=50µA IC=10mA 120 IE=50µA IC=2.0A, IB=200mA IC=2.0A, VCE=1.0V 100 170 100 165 hFE VCE=5.0V, IC=10mA VCE=5.0V, IC=500mA VCE=5.0V, IC=3.0A 40 75 fT VCE=10V, IC=500mA, f=1.0MHz 8.0 BVCEO BVEBO VCE(SAT) VBE(ON) hFE hFE MIN TYP MAX UNITS 1.0 µA 1.0 µA 160 V 70 90 V 7.0 15 V 250 500 mV 0.95 1.1 V 300 MHz R2 (17-June 2004) Central TM CZT3120 Semiconductor Corp. SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0° 10° 0° 10° 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15° 15° 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R2 (17-June 2004)