DATA SHEET MPS455 NPN TRANSISTOR TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR MPS455 is a silicon NPN Medium Power Transistor, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching applications. MAXIMUM RATINGS (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage SYMBOL VCBO VCEO 160 UNITS V 140 V VEBO IC 5.0 V 1.0 A 2.0 Power Dissipation ICM PD 1.0 A W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C 125 °C/W Emitter-Base Voltage Collector Current Peak Collector Current Thermal Resistance ΘJA ELECTRICAL CHARACTERISTICS (TA=25°C) SYMBOL ICBO IEBO TEST CONDITIONS VCB=140V BVCBO BVCEO VEB=4.0V IC=100µA IC=10mA BVEBO VCE(SAT) MIN TYP MAX 0.1 0.1 UNITS µA µA 160 V 140 V IE=100µA IC=150mA, IB=15mA 5.0 V hFE hFE fT VCE=10V, IC=150mA VCE=10V, IC=1.0A VCE=10V, IC=50mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz 0.70 V 300 10 100 MHz 15 pF (SEE REVERSE SIDE) R0 MPS455 NPN MEDIUM POWER TRANSISTOR TO-92 PACKAGE - MECHANICAL OUTLINE A B 123 SYMBOL A (DIA) B C D E F G H I C D Lead Code: E F G H I DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500 12.70 0.016 0.022 0.41 0.56 0.100 2.54 0.050 1.27 0.125 0.165 3.18 4.19 0.080 0.105 2.03 2.67 0.015 0.38 TO-92 (REV: R1) R1 1) Emitter 2) Base 3) Collector