BR602L SILICON BRIDGE RECTIFIER BR6L PRV : 200 Volts Io : 6.0 Amperes 0.158 (4.00) 0.142 (3.60) FEATURES : * * * * * * * 0.445 (11.30) 0.405 (10.30) High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board Pb / RoHS Free AC 0.62 (15.75) 0.58 (14.73) 0.127 (3.20) 0.047 (1.20) AC 0.042 (1.06) 0.038 (0.96) 0.511 (13.0) 0.354 (9.0) MECHANICAL DATA : 0.433 (11.0) 0.275 (7.0) * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.16 grams 0.27 (6.9) 0.23 (5.8) Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specifie. Single phase, half wave, 60 Hz, resistive or inductive load For capacitive load, derate current by 20% RATING SYMBOL VALUE UNIT Maximum Recurrent Peak Reverse Voltage VRRM 200 V Maximum RMS Voltage VRMS 140 V Maximum DC Blocking Voltage VDC 200 V Maximum Average Forward Current Tc=50°C IF(AV) 6.0 A IFSM 200 A Peak Forward Surge Current, Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. It 2 64 AS Maximum Forward Voltage per Diode at I F =3 A. VF 1.0 V IR 10 μA IR(H) 200 μA RθJC 8.0 °C/W TJ - 40 to + 150 °C TSTG - 40 to + 150 °C Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Typical Thermal Resistance (Note 1) Operating Junction Temperature Range Storage Temperature Range 2 Notes : 1. Thermal Resistance from junction to case with units mounted on a 2.6" x 1.4" x 0.06" THK (6.5cm.x 3.5cm.x 0.15cm.) Al. Plate. Heatsink. Page 1 of 2 Rev. 03 : March 24, 2005 RATING AND CHARACTERISTIC CURVES ( BR602L ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 240 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 6.0 5.0 4.0 3.0 2.0 1.0 HEAT-SINK MOUNTING, Tc 2.6" x 1.4" x 0.06" THK. (6.5cm x 3.5cm x 0.15cm) Al.-PLATE 200 T J = 50 °C 160 120 80 8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD 40 0 0 0 25 50 75 100 125 150 175 1 CASE TEMPERATURE, ( °C) FORWARD CURRENT, AMPERES 100 10 Pulse Width = 300 μs 1 % Duty Cycle T J = 25 °C 0.1 REVERSE CURRENT, MICROAMPERES FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE 1.0 2 4 6 10 20 40 60 100 NUMBER OF CYCLES AT 60Hz FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE 10 T J = 100 °C 1.0 0.1 0.01 T J = 25 °C 0 20 40 60 80 100 120 140 PERCENT OF RATED REVERSE VOLTAGE, (%) 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE, VOLTS Page 2 of 2 Rev. 03 : March 24, 2005