MICROCHIP TC4423M

TC4423M/TC4424M/TC4425M
3A Dual High-Speed Power MOSFET Drivers
Features
General Description
• High Peak Output Current: 3A
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 1800 pF in 25 ns
• Short Delay Times: <40 ns (typ)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 3.5 mA (Max)
- With Logic ‘0’ Input – 350 µA (Max)
• Low Output Impedance: 3.5Ω (typ)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input: Will Withstand Negative Swing Up To
5V
• ESD Protected: 4 kV
• Pin-compatible with the TC4426M/TC4427M/
TC4428M and TC4426AM/TC4427AM/
TC4428AM devices
• Wide Operating Temperature Range:
- -55°C to +125°C
• See TC4423/TC4424/TC4425 Data Sheet
(DS21421) for additional temperature range and
packaging offerings
The TC4423M/TC4424M/TC4425M devices are a
family of 3A, dual output buffers/MOSFET drivers. Pincompatible with both the TC4426M/TC4427M/
TC4428M and TC4426AM/4427AM/4428AM families
(dual 1.5A drivers), the TC4423M/TC4424M/TC4425M
family has an increased latch-up current rating of 1.5A,
making them even more robust for operation in harsh
electrical environments.
The TC4423M/TC4424M/TC4425M inputs may be
driven directly from either TTL or CMOS (2.4V to 18V).
In addition, 300 mV of hysteresis is built-in to provide
noise immunity and to allow the device to be driven
from slowly rising or falling waveforms.
Package Types
8-Pin CERDIP TC4423M TC4424M TC4425M
NC 1
IN A 2
GND 3
IN B 4
TC4423M
TC4424M
TC4425M
Applications
As MOSFET drivers, the TC4423M/TC4424M/
TC4425M can easily charge 1800 pF gate capacitance
in under 35 nsec, while providing low enough
impedances in both the on and off states to ensure the
MOSFET's intended state will not be affected, even by
large transients.
8
NC
NC
NC
7
OUT A
OUT A
OUT A
6
VDD
VDD
VDD
5
OUT B
OUT B
OUT B
• Switch-mode Power Supplies
• Pulse Transformer Drive
• Line Drivers
© 2005 Microchip Technology Inc.
DS21937A-page 1
TC4423M/TC4424M/TC4425M
Functional Block Diagram
Inverting
VDD
300 mV
Output
Non-inverting
Input
Effective
Input C = 20 pF
(Each Input)
4.7V
GND(1)
TC4423M Dual Inverting
TC4424M Dual Non-inverting
TC4425M One Inverting,
One Non-inverting
Note 1: Unused inputs should be grounded.
DS21937A-page 2
© 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+22V
Input Voltage, IN A or IN B .......... (VDD + 0.3V) to (GND – 5V)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
-1
—
1
µA
High Output Voltage
VOH
VDD –
0.025
—
—
V
Low Output Voltage
VOL
—
—
0.025
V
Output Resistance, High
ROH
—
2.8
5
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
3.5
5
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
3
—
A
Latch-Up Protection Withstand
Reverse Current
IREV
—
>1.5
—
A
Duty cycle ≤ 2%, t ≤ 300 µsec.
Rise Time
tR
—
23
35
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
tF
—
25
35
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD1
—
33
75
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD2
—
38
75
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
IS
—
—
1.5
0.15
2.5
0.25
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Input
0V ≤ VIN ≤ VDD
Output
Switching Time (Note 1)
Power Supply
Power Supply Current
Note 1:
Switching times ensured by design.
© 2005 Microchip Technology Inc.
DS21937A-page 3
TC4423M/TC4424M/TC4425M
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
-10
—
+10
µA
VOH
VDD – 0.025
—
—
V
Low Output Voltage
VOL
—
—
0.025
V
Output Resistance, High
ROH
—
3.7
8
Ω
IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
4.3
8
Ω
IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
3.0
—
A
Latch-Up Protection
Withstand Reverse Current
IREV
—
>1.5
—
A
Duty cycle ≤ 2%, t ≤ 300 µsec
Rise Time
tR
—
28
60
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Fall Time
tF
—
32
60
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD1
—
32
100
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
Delay Time
tD2
—
38
100
ns
Figure 4-1, Figure 4-2,
CL = 1800 pF
IS
—
—
2.0
0.2
3.5
0.3
mA
VIN = 3V (Both inputs)
VIN = 0V (Both inputs)
Input
0V ≤ VIN ≤ VDD
Output
High Output Voltage
Switching Time (Note 1)
Power Supply
Power Supply Current
Note 1: Switching times ensured by design.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ VDD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
TA
-55
—
+125
ºC
Conditions
Temperature Ranges
Specified Temperature Range (M)
Maximum Junction Temperature
TJ
—
—
+150
ºC
Storage Temperature Range
TA
-65
—
+150
ºC
θJA
—
150
—
ºC/W
Package Thermal Resistances
Thermal Resistance, 8L-CERDIP
DS21937A-page 4
© 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
100
100
4700 pF
4700 pF
80
tFALL (nsec)
tRISE (nsec)
80
3300 pF
60
2200 pF
40
1500 pF
1000 pF
20
470 pF
0
2200 pF
40
1500 pF
1000 pF
20
470 pF
0
4
6
8
FIGURE 2-1:
Voltage.
10
12
VDD (V)
14
16
18
Rise Time vs. Supply
4
6
8
10
12
VDD (V)
FIGURE 2-4:
Voltage.
5V
tFALL (nsec)
60
10V
15V
40
0
100
Fall Time vs. Supply
5V
60
10V
15V
40
1000
0
100
10,000
1000
CLOAD (pF)
CLOAD (pF)
FIGURE 2-2:
Load.
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
32
10,000
Fall Time vs. Capacitive
100
CLOAD = 2200 pF
tRISE
22
tFALL
20
-35
FIGURE 2-3:
Temperature.
-15
DELAY TIME (nsec)
tRISE
26
24
CLOAD = 2200 pF
VDD = 10V
tFALL
28
TIME (nsec)
18
20
20
18
-55
16
80
80
30
14
100
100
tRISE (nsec)
3300 pF
60
tD1
80
60
40
tD2
20
5
25 45
TA (°C)
65
85
105 125
Rise and Fall Times vs.
© 2005 Microchip Technology Inc.
0
FIGURE 2-6:
Amplitude.
1
2
3
4
5 6 7
INPUT (V)
8
9
10 11 12
Propagation Delay vs. Input
DS21937A-page 5
TC4423M/TC4424M/TC4425M
Typical Performance Curves (Continued)
50
50
CLOAD = 2200 pF
CLOAD = 2200 pF
45
DELAY TIME (nsec)
DELAY TIME (nsec)
45
40
35
tD2
30
tD1
tD2
40
35
tD1
30
25
25
20
-55
20
4
6
8
FIGURE 2-7:
Supply Voltage.
10
12
VDD (V)
14
16
18
Propagation Delay Time vs.
-35
-15
5
FIGURE 2-10:
Temperature.
25 45
TA (°C)
65
85
105 125
Propagation Delay Time vs.
1.4
TA = 25°C
BOTH INPUTS = 1
1.2
IQUIESCENT (mA)
IQUIESCENT (mA)
1
BOTH INPUTS = 0
0.1
1.0
0.8
BOTH INPUTS = 1
0.6
0.4
0.2
0.01
4
6
8
FIGURE 2-8:
Supply Voltage.
10
12
VDD (V)
14
16
18
Quiescent Current vs.
-35
-15
5
FIGURE 2-11:
Temperature.
14
25 45
TA (°C)
65
85
105 125
Quiescent Current vs.
14
12
12
WORST CASE
@ TJ = +150°C
10
RDS(ON) (Ω)
RDS(ON) (Ω)
BOTH INPUTS = 0
0.0
-55
8
6
TYP @
TA = +25°C
4
WORST CASE
@ TJ = +150°C
10
8
6
TYP @
TA = +25°C
4
2
2
4
6
8
10
12
VDD (V)
14
16
18
FIGURE 2-9:
Output Resistance (Output
High) vs. Supply Voltage.
DS21937A-page 6
4
6
8
10
12
VDD (V)
14
16
18
FIGURE 2-12:
Output Resistance (Output
Low) vs. Supply Voltage.
© 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
Typical Performance Curves (Continued)
Note: Load on single output only
60
60
VDD = 18V
VDD = 18V
50
3300 pF
50
1000 pF
ISUPPLY (mA)
ISUPPLY (mA)
634 kHz
40
30
355 kHz
20
200 kHz
40
30
10,000 pF
20
100 pF
63.4 kHz
10 112.5 kHz
35.5 kHz
10
20 kHz
0
100
FIGURE 2-13:
Capacitive Load.
1000
CLOAD (pF)
0
10,000
Supply Current vs.
1.125 MHz
40
200 kHz
634 kHz
355 kHz
0
100
1000
CLOAD (pF)
FIGURE 2-14:
Capacitive Load.
60
50
40
30
10
0
10,000
Supply Current vs.
10
FIGURE 2-17:
Frequency.
120
100
FREQUENCY (kHz)
1000
Supply Current vs.
120
VDD = 6V
4700 pF
VDD = 6V
100
100
80
1.125 MHz
60
3.55 MHz
634 kHz
40
2 MHz
FIGURE 2-15:
Capacitive Load.
10,000 pF
80
2200 pF
60
1000 pF
40
100 pF
355 kHz
20
0
100
ISUPPLY (mA)
ISUPPLY (mA)
100 pF
10,000 pF
20
112.5 kHz
63.4 kHz
20 kHz
10
3300 pF
1000 pF
70
50
20
Supply Current vs.
VDD = 12V
80
2 MHz
60
30
1000
90
VDD = 12V
ISUPPLY (mA)
ISUPPLY (mA)
70
100
FREQUENCY (kHz)
FIGURE 2-16:
Frequency.
90
80
10
20
112.5 kHz
20 kHz
1000
CLOAD (pF)
10,000
Supply Current vs.
© 2005 Microchip Technology Inc.
0
10
FIGURE 2-18:
Frequency.
100
FREQUENCY (kHz)
1000
Supply Current vs.
DS21937A-page 7
TC4423M/TC4424M/TC4425M
Typical Performance Curves (Continued)
10-7
8
6
4
A • sec
2
10-8
8
6
4
2
10-9
0
2
4
6
8
10
12
14
16
18
VIN (V)
Note:
The values on this graph represent the
loss seen by both drivers in a package
during one complete cycle. For a single
driver, divide the stated values by 2. For
a single transition of a single driver,
divide the stated value by 4.
FIGURE 2-19:
Energy.
DS21937A-page 8
TC4423M Crossover
© 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
8-Pin
CERDIP
3.1
PIN FUNCTION TABLE
Symbol
Description
1
NC
No connection
2
IN A
Input A
3
GND
Ground
4
IN B
Input B
5
OUT B
6
VDD
7
OUT A
8
NC
Output B
Supply input
Output A
No connection
Input A (IN A)
IN A is a TTL/CMOS-compatible input that controls
OUT A. This input has 300 mV of hysteresis between
the high and low input levels that allows it to be driven
from slow rising and falling signals, as well as providing
noise immunity.
3.2
3.4
Output A (OUT A)
OUT A is a CMOS, push-pull output that is capable of
sourcing and sinking 3A peaks of current (VDD = 18V).
The low output impedance ensures the gate of the
external MOSFET will stay in the intended state even
during large transients. This output also has a reverse
current latch-up rating of 1.5A.
3.5
Supply Input (VDD)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with a local ceramic capacitor.
This bypass capacitor provides a localized lowimpedance path for the peak currents that are to be
provided to the load.
3.6
Ground (GND)
GND is the device return pin. The ground pin(s) should
have a low-impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin(s) when the capacitive load is being
discharged.
Input B (IN B)
IN B is a TTL/CMOS-compatible input that controls
OUT B. This input has 300 mV of hysteresis between
the high and low input levels that allows it to be driven
from slow rising and falling signals, as well as providing
noise immunity.
3.3
Output B (OUT B)
OUT B is a CMOS push-pull output that is capable of
sourcing and sinking 3A peaks of current (VDD = 18V).
The low output impedance ensures the gate of the
external MOSFET will stay in the intended state even
during large transients. This output also has a reverse
current latch-up rating of 1.5A.
© 2005 Microchip Technology Inc.
DS21937A-page 9
TC4423M/TC4424M/TC4425M
4.0
APPLICATIONS INFORMATION
VDD = 16V
VDD = 16V
1 µF
WIMA
MKS-2
Input
1 µF
WIMA
MKS-2
0.1 µF
Ceramic
Output
CL = 1800 pF
1
2
Input
TC4424M
(1/2 TC4425M)
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 ns
+5V
Input: 100 kHz,
square wave,
tRISE = tFALL ≤ 10 ns
+5V
90%
Input
0V
Output
CL = 1800 pF
1
2
TC4423M
(1/2 TC4425M)
0.1 µF
Ceramic
90%
Input
10%
16V
tD1
tF
tD2
0V
tR
90%
90%
Output
0V
FIGURE 4-1:
Time.
DS21937A-page 10
10%
16V
tD1 90%
Output
10%
10%
Inverting Driver Switching
0V
FIGURE 4-2:
Switching Time.
10%
tR
90%
tD2
tF
10%
Non-inverting Driver
© 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
8-Lead CERDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example:
TC4424
e3 256
MJA^^
0543
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
© 2005 Microchip Technology Inc.
DS21937A-page 11
TC4423M/TC4424M/TC4425M
8-Lead Ceramic Dual In-line – 300 mil (CERDIP)
E1
2
n
1
D
E
A2
A
c
L
B1
eB
B
A1
Units
Dimension Limits
n
p
Number of Pins
Pitch
Top to Seating Plane
Standoff §
Shoulder to Shoulder Width
Ceramic Pkg. Width
Overall Length
Tip to Seating Plane
Lead Thickness
Upper Lead Width
Lower Lead Width
Overall Row Spacing
*Controlling Parameter
JEDEC Equivalent: MS-030
A
A1
E
E1
D
L
c
B1
B
eB
p
MIN
.160
.020
.290
.230
.370
.125
.008
.045
.016
.320
INCHES*
NOM
8
.100
.180
.030
.305
.265
.385
.163
.012
.055
.018
.360
MAX
.200
.040
.320
.300
.400
.200
.015
.065
.020
.400
MILLIMETERS
NOM
8
2.54
4.06
4.57
0.51
0.77
7.37
7.75
5.84
6.73
9.40
9.78
3.18
4.13
0.20
0.29
1.14
1.40
0.41
0.46
8.13
9.15
MIN
MAX
5.08
1.02
8.13
7.62
10.16
5.08
0.38
1.65
0.51
10.16
Drawing No. C04-010
DS21937A-page 12
© 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
APPENDIX A:
REVISION HISTORY
Revision A (March 2005)
• Original Release of this Document.
© 2005 Microchip Technology Inc.
DS21937A-page 13
TC4423M/TC4424M/TC4425M
NOTES:
DS21937A-page 14
© 2005 Microchip Technology Inc.
TC4423M/TC4424M/TC4425M
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
XX
Device and Temperature
Range
Package
Device:
Package:
TC4423M: 3A Dual MOSFET Driver, Inverting,
-55°C to +125°C
TC4424M: 3A Dual MOSFET Driver, Non-Inverting,
-55°C to +125°C
TC4425M: 3A Dual MOSFET Driver, Complementary,
-55°C to +125°C
JA = Ceramic DIP, (300 mil body), 8-lead
© 2005 Microchip Technology Inc.
Examples:
a)
TC4423MJA:
3A Dual MOSFET Driver,
Inverting,
-55°C to +125°C
8LD CERDIP package.
a)
TC4424MJA:
3A Dual MOSFET Driver,
Non-Inverting,
-55°C to +125°C
8LD CERDIP package.
a)
TC4425MJA:
3A Dual MOSFET Driver,
Complementary,
-55°C to +125°C
8LD CERDIP package.
DS21937A-page 15
TC4423M/TC4424M/TC4425M
NOTES:
DS21937A-page 16
© 2005 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED,
WRITTEN OR ORAL, STATUTORY OR OTHERWISE,
RELATED TO THE INFORMATION, INCLUDING BUT NOT
LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE,
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written approval by Microchip. No licenses are conveyed,
implicitly or otherwise, under any Microchip intellectual property
rights.
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PowerCal, PowerInfo, PowerMate, PowerTool, rfLAB,
rfPICDEM, Select Mode, Smart Serial, SmartTel, Total
Endurance and WiperLock are trademarks of Microchip
Technology Incorporated in the U.S.A. and other countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2005, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received ISO/TS-16949:2002 quality system certification for
its worldwide headquarters, design and wafer fabrication facilities in
Chandler and Tempe, Arizona and Mountain View, California in
October 2003. The Company’s quality system processes and
procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
© 2005 Microchip Technology Inc.
DS21937A-page 17
WORLDWIDE SALES AND SERVICE
AMERICAS
ASIA/PACIFIC
ASIA/PACIFIC
EUROPE
Corporate Office
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7200
Fax: 480-792-7277
Technical Support:
http://support.microchip.com
Web Address:
www.microchip.com
Australia - Sydney
Tel: 61-2-9868-6733
Fax: 61-2-9868-6755
India - Bangalore
Tel: 91-80-2229-0061
Fax: 91-80-2229-0062
China - Beijing
Tel: 86-10-8528-2100
Fax: 86-10-8528-2104
India - New Delhi
Tel: 91-11-5160-8631
Fax: 91-11-5160-8632
Austria - Weis
Tel: 43-7242-2244-399
Fax: 43-7242-2244-393
Denmark - Ballerup
Tel: 45-4450-2828
Fax: 45-4485-2829
China - Chengdu
Tel: 86-28-8676-6200
Fax: 86-28-8676-6599
Japan - Kanagawa
Tel: 81-45-471- 6166
Fax: 81-45-471-6122
France - Massy
Tel: 33-1-69-53-63-20
Fax: 33-1-69-30-90-79
China - Fuzhou
Tel: 86-591-8750-3506
Fax: 86-591-8750-3521
Korea - Seoul
Tel: 82-2-554-7200
Fax: 82-2-558-5932 or
82-2-558-5934
Germany - Ismaning
Tel: 49-89-627-144-0
Fax: 49-89-627-144-44
Atlanta
Alpharetta, GA
Tel: 770-640-0034
Fax: 770-640-0307
Boston
Westford, MA
Tel: 978-692-3848
Fax: 978-692-3821
Chicago
Itasca, IL
Tel: 630-285-0071
Fax: 630-285-0075
Dallas
Addison, TX
Tel: 972-818-7423
Fax: 972-818-2924
Detroit
Farmington Hills, MI
Tel: 248-538-2250
Fax: 248-538-2260
Kokomo
Kokomo, IN
Tel: 765-864-8360
Fax: 765-864-8387
China - Hong Kong SAR
Tel: 852-2401-1200
Fax: 852-2401-3431
China - Shanghai
Tel: 86-21-5407-5533
Fax: 86-21-5407-5066
China - Shenyang
Tel: 86-24-2334-2829
Fax: 86-24-2334-2393
China - Shenzhen
Tel: 86-755-8203-2660
Fax: 86-755-8203-1760
China - Shunde
Tel: 86-757-2839-5507
Fax: 86-757-2839-5571
Singapore
Tel: 65-6334-8870
Fax: 65-6334-8850
Taiwan - Kaohsiung
Tel: 886-7-536-4818
Fax: 886-7-536-4803
Taiwan - Taipei
Tel: 886-2-2500-6610
Fax: 886-2-2508-0102
Italy - Milan
Tel: 39-0331-742611
Fax: 39-0331-466781
Netherlands - Drunen
Tel: 31-416-690399
Fax: 31-416-690340
England - Berkshire
Tel: 44-118-921-5869
Fax: 44-118-921-5820
Taiwan - Hsinchu
Tel: 886-3-572-9526
Fax: 886-3-572-6459
China - Qingdao
Tel: 86-532-502-7355
Fax: 86-532-502-7205
Los Angeles
Mission Viejo, CA
Tel: 949-462-9523
Fax: 949-462-9608
San Jose
Mountain View, CA
Tel: 650-215-1444
Fax: 650-961-0286
Toronto
Mississauga, Ontario,
Canada
Tel: 905-673-0699
Fax: 905-673-6509
10/20/04
DS21937A-page 18
© 2005 Microchip Technology Inc.