TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions (in mm): ∅ 5 Leads with stand-off Peak wavelength: λp = 940 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 22° Low forward voltage Suitable for high pulse current operation Good spectral matching with Si photodetectors Compliant to RoHS directive 2002/95/EC and accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a blue-gray plastic package. in APPLICATIONS • Infrared remote control units with high power requirements • Free air transmission systems • Infrared source for optical counters and card readers PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λP (nm) tr (ns) ± 22 940 800 TSAL5300 45 Note Test conditions see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TSAL5300 TSAL5300-MSZ PACKAGING REMARKS PACKAGE FORM Bulk Tape and ammopack MOQ: 4000 pcs, 4000 pcs/bulk MOQ: 5000 pcs, 1000 pcs/ammopack T-1¾ T-1¾ Note MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE Reverse voltage TEST CONDITION VR 5 UNIT V Forward current IF 100 mA mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 Surge forward current tp = 100 µs IFSM 1.5 A Power dissipation PV 160 mW Junction temperature Tj 100 °C °C Operating temperature range Tamb - 40 to + 85 Storage temperature range Tstg - 40 to + 100 °C t ≤ 5 s, 2 mm from case Tsd 260 °C J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W Soldering temperature Thermal resistance junction/ambient Note Tamb = 25 °C, unless otherwise specified Document Number: 81008 Rev. 2.0, 29-Jun-09 For technical questions, contact: [email protected] www.vishay.com 1 TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 120 160 IF - Forward Current (mA) PV - Power Dissipation (mW) 180 140 120 100 RthJA = 230 K/W 80 60 40 100 80 RthJA = 230 K/W 60 40 20 20 0 0 0 10 21211 20 30 40 50 60 70 80 90 100 0 21212 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 2 - Forward Current Limit vs. Ambient Temperature BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 µs Temperature coefficient of VF Reverse current Forward voltage Junction capacitance Radiant intensity Radiant power Temperature coefficient of φe MIN. TYP. MAX. UNIT VF 1.35 1.6 V VF 2.6 3 V IF = 1 mA TKVF - 1.8 VR = 5 V IR VR = 0 V, f = 1 MHz, E = 0 Cj IF = 100 mA, tp = 20 ms Ie 30 45 260 mV/K 10 µA 150 mW/sr 25 pF IF = 1 A, tp = 100 µs Ie 350 mW/sr IF = 100 mA, tp = 20 ms φe 35 mW IF = 20 mA TKφe - 0.6 %/K ϕ ± 22 deg nm Angle of half intensity Peak wavelength IF = 100 mA λp 940 Spectral bandwidth IF = 100 mA Δλ 50 nm Temperature coefficient of λp IF = 100 mA TKλp 0.2 nm/K IF = 100 mA tr 800 ns IF = 1 A tr 500 ns IF = 100 mA tf 800 ns IF = 1 A tf 500 ns Method: 63 % encircled energy d 2.3 mm Rise time Fall time Virtual source diameter Note Tamb = 25 °C, unless otherwise specified www.vishay.com 2 For technical questions, contact: [email protected] Document Number: 81008 Rev. 2.0, 29-Jun-09 TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified 1000 Φ e - Radiant Power (mW) I F - Forward Current (A) 10 1 I FSM = 1 A (Single Pulse) t p/T = 0.01 0.05 10 0 0.1 0.5 1.0 10 -1 10 -2 96 11987 10 -1 10 0 10 1 t p - Pulse Duration (ms) 10 1 0.1 10 0 10 2 13602 1.6 103 1.2 Ie rel; Φe rel 104 102 tP = 100 µs tP/T = 0.001 101 0.8 0.4 0 1 2 3 0 - 10 0 10 4 VF - Forward Voltage (V) 13600 50 100 140 T amb - Ambient Temperature (°C) 94 7993 Fig. 4 - Forward Current vs. Forward Voltage Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature 1000 1.25 Φe rel - Relative Radiant Power I e - Radiant Intensity (mW/sr) 10 4 IF = 20 mA 100 100 10 1 1.0 0.75 0.5 0.25 IF = 100 mA 0 0.1 100 14327 10 1 10 2 10 3 I F - Forward Current (mA) Fig. 6 - Radiant Power vs. Forward Current Fig. 3 - Pulse Forward Current vs. Pulse Duration IF - Forward Current (mA) 100 101 102 103 I F - Forward Current (mA) Fig. 5 - Radiant Intensity vs. Forward Current Document Number: 81008 Rev. 2.0, 29-Jun-09 890 104 14291 940 990 λ - Wavelength (nm) Fig. 8 - Relative Radiant Power vs. Wavelength For technical questions, contact: [email protected] www.vishay.com 3 TSAL5300 Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs 0° 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 94 8883 ϕ - Angular Displacement Ie rel - Relative Radiant Intensity 30° 80° 0.6 0.4 0 0.2 Fig. 9 - Relative Radiant Intensity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters C Ø 5.8 ± 0.15 A <0.7 7.7 ± 0.15 8.7 ± 0.3 Area not plane 34.4 ± 0.55 11.4 ± 0.3 (3.6) R2.49 (sphere) 1.1 ± 0.25 1 min. Ø 5 ± 0.15 + 0.15 0.5 - 0.05 + 0.15 0.5 - 0.05 technical drawings according to DIN specifications 2.54 nom. 6.544-5258.05-4 Issue: 8; 19.05.09 96 12122 www.vishay.com 4 For technical questions, contact: [email protected] Document Number: 81008 Rev. 2.0, 29-Jun-09 TSAL5300 High Power Infrared Emitting Diode, Vishay Semiconductors 940 nm, GaAlAs/GaAs TAPE DIMENSIONS TSAL5300 OPTION H ± 0.5 mm QUANTITY/BOX CS21Z 22 1000 FSZ 27 1000 GSZ 29 1000 MSZ 25.5 1000 ±1 ±2 “H” ± 0.5 9 ± 0.3 12 18 +1 - 0.5 0.3 ± 0.2 12.7 ± 1 0.9 max. Ø4 2.54 ± 0.2 + 0.6 - 0.1 5.08 ± 0.7 6.35 12.7 ± 0.2 19314 ± 0.7 Measure limit over 20 index-holes: ± 1 Fig. 10 - ∅ 5 mm Devices on Tape AMMOPACK The tape is folded in a concertina arrangement and laid in cardboard box. Tape feed direction Diodes: cathode before anode Transistors: collector before emitter If components are required with cathode before the anode (figure 12), then start of tape should be taken from the side of the box marked “-”. If components are required with anode before cathode, then tape should be taken from the side of the box marked “+”. Label Tape feed direction Diodes: anode before cathode Transistors: emitter before collector C A B 94 8667 Fig. 11 - Tape Direction Document Number: 81008 Rev. 2.0, 29-Jun-09 For technical questions, contact: [email protected] www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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