MICROCHIP TC1221ECH

M
TC1221/TC1222
High Frequency Switched Capacitor Voltage Converters
with Shutdown in SOT Packages
Features
General Description
•
•
•
•
•
•
•
•
The TC1221/TC1222 are CMOS “charge-pump”
voltage converters in ultra-small 6-Pin SOT-23A
packages. They invert and/or double an input voltage
which can range from +1.8V to +5.5V. Conversion
efficiency is typically 96%. Switching frequency is
125kHz for the TC1221, 750kHz for the TC1222. When
the shutdown pin is held at a logic low, the device goes
into a very low power mode of operation, consuming
less than 1µA of supply current.
Charge Pumps in 6-Pin SOT-23A Package
96% Voltage Conversion Efficiency
Voltage Inversion and/or Doubling
Operates from +1.8V to +5.5V
Up to 25mA Output Current
Only Two External Capacitors Required
Power-Saving Shutdown Mode
Fully Compatible with 1.8V Logic Systems
For standard voltage inverter applications, the device
requires only two external capacitors. With a few
additional components a positive doubler can also be
built. All other circuitry, including control, oscillator,
power MOSFETs are integrated on-chip. Typical supply
currents are 290µA (TC1221) and 1800µA (TC1222).
Applications
•
•
•
•
•
LCD Panel Bias
Cellular Phones
Pagers
PDAs, Portable Data Loggers
Battery-Powered Devices
All devices are available in 6-pin SOT-23A surface
mount packages.
Device Selection Table
Part
Number
Functional Block Diagram
Osc.
Freq.
(kHz)
Package
Negative Voltage Inverter
Operating
Temp.
Range
TC1221ECH 6-Pin SOT-23A
125
-40°C to +85°C
TC1222ECH 6-Pin SOT-23A
750
-40°C to +85°C
C+
+
C1
C–
VIN
Input
TC1221
TC1222
ON
SHDN
Package Type
OFF
6-Pin SOT-23A
V–
Output
OUT
C+
SHDN
GND
6
5
4
GND
C2
+
TC1221ECH
TC1222ECH
1
2
3
OUT
VIN
C–
NOTE: 6-Pin SOT-23A is equivalent to the EIAJ SC-74
 2002 Microchip Technology Inc.
DS21367B-page 1
TC1221/TC1222
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
Input Voltage (VIN to GND)....................... +6.0V, -0.3V
Output Voltage (OUT to GND).................. -6.0V, +0.3V
Current at OUT Pin..............................................50mA
Short-Circuit Duration – OUT to GND ............Indefinite
Power Dissipation (TA ≤ 70°C)
6-Pin SOT-23A .........................................240mW
Operating Temperature Range.............-40°C to +85°C
Storage Temperature (Unbiased) .......-65°C to +150°C
TC1121 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = -40°C to +85°C, VIN = +5V, C1 = C2 = 1µF, (TC1221), C1 = C2 = 0.22µF (TC1222), Typical values
are at TA = +25°C.
Symbol
Parameter
IDD
Supply Current
Min
Typ
Max
Units
—
—
290
1800
600
2800
µA
Device
Test Conditions
TC1221
TC1222
ISHDN
Shutdown Supply Current
—
0.01
1.0
µA
SHDN = GND, VIN = 5V (Note 2)
VMIN
Minimum Supply Voltage
1.8
—
—
V
RLOAD = 1kΩ
VMAX
Maximum Supply Voltage
—
—
5.5
V
FOSC
Oscillator Frequency
81
550
125
750
169
950
kHz
VIH
SHDN Input Logic High
1.4
—
V
VIN = VMIN to VMAX
VIL
SHDN Input Logic Low
—
—
0.4
V
VIN = VMIN to VMAX
PEFF
Power Efficiency
—
—
90
70
—
—
%
VEFF
Voltage Conversion Efficiency
94
96
—
%
RLOAD = ∞
ROUT
Output Resistance
—
—
25
65
Ω
ILOAD = 0.5mA to 25mA (Note 1)
TWK
Wake-up Time From Shutdown
Mode
—
—
80
25
—
—
µsec
Note
1:
2:
RLOAD = 1kΩ
TC1221
TC1222
TC1221
TC1222
TC1221
TC1222
RLOAD = 1kΩ
RLOAD = 1kΩ
Capacitor contribution is approximately 20% of the output impedance [ESR = 1/ pump frequency x capacitance].
VIN is guaranteed to be disconnected from OUT when the converter is in shutdown..
DS21367B-page 2
 2002 Microchip Technology Inc.
TC1221/TC1222
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(6-Pin SOT-23A)
Symbol
1
OUT
2
VIN
3
C–
4
GND
5
SHDN
6
C
+
 2002 Microchip Technology Inc.
Description
Inverting charge pump output.
Positive power supply input.
Commutation capacitor negative terminal.
Ground.
Shutdown input (active low).
Commutation capacitor positive terminal.
DS21367B-page 3
TC1221/TC1222
3.0
DETAILED DESCRIPTION
The TC1221/TC1222 charge pump converters invert
the voltage applied to the VIN pin. Conversion consists
of a two-phase operation (Figure 3-1). During the first
phase, switches S2 and S4 are opened and S1 and S3
are closed. During this time, C1 charges to the voltage
on VIN and load current is supplied from C2. During the
second phase, S2 and S4 are closed, and S1 and S3
are opened. This action connects C1 across C2,
restoring charge to C2.
FIGURE 3-1:
IDEAL SWITCHED
CAPACITOR CHARGE
PUMP
S2
S1
VIN
TC1221/1222
C1
C2
S3
S4
VOUT = – (VIN)
OSC
Phase 1
DS21367B-page 4
 2002 Microchip Technology Inc.
TC1221/TC1222
4.0
APPLICATIONS INFORMATION
4.1
Output Voltage Considerations
The TC1221/TC1222 perform voltage conversion but
do not provide regulation. The output voltage will droop
in a linear manner with respect to load current. The
value of this equivalent output resistance is approximately 25Ω nominal at +25°C and VIN = +5V. VOUT is
approximately -5V at light loads, and droops according
to the equation below:
EQUATION 4-2:
PLOSS(4) = [(0.5)(C1)(VIN2 – VOUT2) + (0.5)
(C2)(VRIPPLE2 – 2VOUT VRIPPLE)] x fOSC
EQUATION 4-3:
VRIPPLE = [ IOUT / 2 x ( fOSC) (C2)] + 2 ( IOUT) (ESRC2)
FIGURE 4-1:
VDROP = IOUT x ROUT
VOUT = – (VIN – VDROP)
4.2
f
V+
Charge Pump Efficiency
The overall power efficiency of the charge pump is
affected by four factors:
1.
2.
3.
4.
Losses from power consumed by the internal
oscillator, switch drive, etc. (which vary with
input voltage, temperature and oscillator
frequency).
I2R losses due to the on-resistance of the
MOSFET switches on-board the charge pump.
Charge pump capacitor losses due to effective
series resistance (ESR).
Losses that occur during charge transfer (from
the commutation capacitor to the output
capacitor) when a voltage difference between
the two capacitors exists.
Most of the conversion losses are due to factors (2) and
(3) above. These losses are given by Equation 4-1(b).
EQUATION 4-1:
a) PLOSS (2, 3) = IOUT2 x ROUT
b) where ROUT = [ 1 / [fOSC(C1) ] + 8RSWITCH +
4ESRC1 + ESRC2]
IDEAL SWITCHED
CAPACITOR MODEL
VOUT
C1
FIGURE 4-2:
C2
RL
EQUIVALENT OUTPUT
RESISTANCE
REQUIV
V+
VOUT
REQUIV = 1
f x C1
4.3
C2
RL
Capacitor Selection
In order to maintain the lowest output resistance and
output ripple voltage, it is recommended that low ESR
capacitors be used. Additionally, larger values of C1
will lower the output resistance and larger values of
C2 will reduce output ripple. (Equation 4-1(b) and
Equation 4-3).
The 1/(fOSC)(C1) term in Equation 4-1(b) is the
effective output resistance of an ideal switched
capacitor circuit (Figure 4-1 and Figure 4-2). The value
of RSWITCH can be approximated at 0.5Ω for the
TC1221/TC1222.
The remaining losses in the circuit are due to factor (4)
above, and are shown in Equation 4-2. The output
voltage ripple is given by Equation 4-3.
 2002 Microchip Technology Inc.
DS21367B-page 5
TC1221/TC1222
Table 4-1 shows various values of C1 and the
corresponding output resistance values @ +25°C. It
assumes a 0.1Ω ESRC1 and 2Ω RSWITCH. Table 4-2
shows the output voltage ripple for various values of
C2. The VRIPPLE values assume 10mA output load
current and 0.1Ω ESRC2.
TABLE 4-1:
C1 (µF)
TC1221
ROUT(Ω)
TC1222
ROUT(Ω)
0.22
52.9
22.6
0.33
40.8
20.5
0.47
33.5
19.4
1.0
25
17.8
TABLE 4-2:
4.4
OUTPUT RESISTANCE
VS. C1 (ESR = 0.1Ω)
Shutdown Input
The TC1221/TC1222 is enabled when SHDN is high,
and disabled when SHDN is low. This input cannot be
allowed to float. The SHDN input should be limited to
0.5V above VIN to avoid significant current flows.
4.6
Voltage Inverter
The most common application for charge pump
devices is the inverter (Figure 4-3). This application
uses two external capacitors: C1 and C2 (plus a power
supply bypass capacitor, if necessary). The output is
equal to -VIN plus any voltage drops due to loading.
Refer to Table 4-1 and Table 4-2 for capacitor
selection.
FIGURE 4-3:
VOLTAGE INVERTER
TEST CIRCUIT
OUTPUT VOLTAGE RIPPLE
VS. C2 (ESR = 0.1Ω)
IOUT 10mA
C2 (µF)
TC1221
VRIPPLE (mV)
TC1222
VRIPPLE (mV)
0.22
184
32
0.33
123
22
0.47
87
16
1.0
42
9
Input Supply Bypassing
The VIN input should be capacitively bypassed to
reduce AC impedance and minimize noise effects due
to the internal switching of the device. The recommended capacitor depends on the configuration of the
TC1221/TC1222.
DS21367B-page 6
4.5
C3
VIN
+
VOUT
1
2
OUT
6
C1+
+
TC1221
IN TC1220
3
C1–
5
SHDN
Device
TC1221
TC1222
GND
+
C2
C1
RL
4
C1
1µF
0.22µF
C2
1µF
0.22µF
C3
1µF
0.22µF
 2002 Microchip Technology Inc.
TC1221/TC1222
4.7
Cascading Devices
4.8
Two or more TC1221/TC1222 can be cascaded to
increase output voltage (Figure 4-4). If the output is
lightly loaded, it will be close to (-2 x VIN) but will droop
at least by ROUT of the first device multiplied by the IQ
of the second. It can be seen that the output resistance
rises rapidly for multiple cascaded devices.
FIGURE 4-4:
Paralleling Devices
To reduce the value of ROUT, multiple TC1221/
TC1222’s can be connected in parallel (Figure 4-5).
The output resistance will be reduced by a factor of N
where N is the number of TC1221/TC1222. Each
device will require its own pump capacitor (C1), but all
devices may share one reservoir capacitor (C2).
However, to preserve ripple performance the value of
C2 should be scaled according to the number of
paralleled TC1221/TC1222.
CASCADING MULTIPLE DEVICES TO INCREASE OUTPUT VOLTAGE
...
VIN
2
2
3
3
4
C1
TC1221
TC1222
C1
4
TC1221
TC1222
6
5
"n"
+
+
6
5
VIN
1
"1"
...
SHDN
1
VOUT
SHDN
C2
C2
+
+
VOUT = -nVIN
FIGURE 4-5:
PARALLELING MULTIPLE DEVICES TO REDUCE OUTPUT RESISTANCE
ROUT = ROUT OF SINGLE DEVICE
NUMBER OF DEVICES
...
VIN
VIN
2
2
3
3
4
C1
TC1221
TC1222
4
C1
TC1221
TC1222
+
+
6
5
"1"
1
6
"n"
5 SHDN
SHDN
1
VOUT
...
VOUT = -VIN
Shutdown
Control
 2002 Microchip Technology Inc.
+
C2
DS21367B-page 7
TC1221/TC1222
4.9
Voltage Doubler/Inverter
4.10
Another common application of the TC1221/TC1222 is
shown in Figure 4-6. This circuit performs two functions
in combination. C1 and C2 form the standard inverter
circuit described above. C3 and C4 plus the two diodes
form the voltage doubler circuit. C1 and C3 are the
pump capacitors and C2 and C4 are the reservoir
capacitors. Because both sub-circuits rely on the same
switches if either output is loaded, both will droop
toward GND. Make sure that the total current drawn
from both the outputs does not total more than 40mA.
FIGURE 4-6:
Diode Protection for Heavy Loads
When heavy loads require the OUT pin to sink large
currents being delivered by a positive source, diode
protection may be needed. The OUT pin should not be
allowed to be pulled above ground. This is
accomplished by connecting a Schottky diode
(1N5817) as shown in Figure 4-7.
4.11
Layout Considerations
As with any switching power supply circuit, good layout
practice is recommended. Mount components as close
together as possible to minimize stray inductance and
capacitance. Noise leakage into other circuitry can be
minimized with the use of a large ground plane.
COMBINED DOUBLER AND INVERTER
VIN
2
3
C1
+
4
TC1221
TC1222
6
D1, D2 = 1N4148
D1
1
VOUT = -VIN
5
C2
+
D2
VOUT = (2VIN) –
(VFD1) – (VFD2)
+
C3
+
C4
Shutdown
Control
FIGURE 4-7:
HIGH V– LOAD CURRENT
GND
4
TC1221
TC1222
OUT
DS21367B-page 8
1
 2002 Microchip Technology Inc.
TC1221/TC1222
5.0
TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Circuit of Figure 4-3, VIN = +5V, C1 = C2 = C3, TA = 25°C unless otherwise noted.
TC1221 Supply Current vs. Supply Voltage
TC1221 Output Voltage Droop
vs. Capacitance, C1 = C2
C1 = C2 = C3 = 1µF,
RL = ∞, +25°C
300
600
250
200
150
100
50
1.5
2.0
2.5
3.0
3.5
4.0
4.5
SUPPLY VOLTAGE (V)
5.0
5.5
OUTPUT VOLTAGE DROOP (mV)
SUPPLY CURRENT (µA)
350
VIN = 3.3V, RL = 1K, +25°C
VIN = 5.0V, RL = 1K, +25°C
500
400
VIN = 5.0V
300
VIN = 3.3V
200
100
0
0
15
TC1221 Oscillator Frequency
vs. Supply Voltage
55
130
50
45
40
35
1.5
2.0
2.5
3.0
3.5
4.0
4.5
SUPPLY VOLTAGE (V)
5.0
5.5
TC1221 Output Voltage Ripple
vs. Capacitance, C2
OUTPUT VOLTAGE RIPPLE (mVp-p)
5
10
CAPACITANCE (µF)
C1 = C2 = C3 = 1µF, +25°C
60
300
C1 = C2 = C3 = 1µF,
RL = ∞, +25°C
120
110
100
90
1.5
VIN = 3.3V, RL = 1K, +25°C
VIN = 5.0V, RL = 1K, +25°C
250
OSCILLATOR FREQUENCY (kHz)
OUTPUT RESISTANCE (Ohms)
TC1221 Output Resistance vs. Supply Voltage
65
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
SUPPLY VOLTAGE (V)
200
150
VIN = 5.0V
100
VIN = 3.3V
50
0
0
5
10
CAPACITANCE (µF)
 2002 Microchip Technology Inc.
15
DS21367B-page 9
TC1221/TC1222
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
TC1222 Output Voltage Droop
vs. Capacitance, C1 = C2
TC1222 Supply Current vs. Supply Voltage
C1 = C2 = C3 = 0.22µF,
RL = ∞, +25°C
1500
500
1250
1000
750
500
250
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
SUPPLY VOLTAGE (V)
OUTPUT VOLTAGE DROOP (mV)
SUPPLY CURRENT (µA)
1750
350
300
VIN = 5.0V
250
VIN = 3.3V
200
150
0
1
65
2
3
CAPACITANCE (µF)
5
4
C1 = C2 = C3 = 0.22µF, +25°C
60
55
TC1222 Oscillator Frequency
vs. Supply Voltage
50
750
45
40
35
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
SUPPLY VOLTAGE (V)
TC1222 Output Voltage Ripple
vs. Capacitance , C2
160
VIN = 3.3V, RL = 1K, +25°C
VIN = 5.0V, RL = 1K, +25°C
OSCILLATOR FREQUENCY (kHz)
OUTPUT RESISTANCE (Ohms)
400
100
TC1222 Output Resistance vs. Supply Voltage
OUTPUT VOLTAGE RIPPLE (mVp-p)
VIN = 3.3V, RL = 1K, +25°C
VIN = 5.0V, RL = 1K, +25°C
450
C1 = C2 = C3 = 0.22µF,
RL = ∞, +25°C
700
650
600
550
500
1.5
120
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
SUPPLY VOLTAGE (V)
VIN = 5.0V
VIN = 3.3V
80
40
0
0
1
DS21367B-page 10
2
3
CAPACITANCE (µF)
4
5
 2002 Microchip Technology Inc.
TC1221/TC1222
6.0
PACKAGING INFORMATION
6.1
Package Marking Information
1
&
2
= part number code + temperature range
(two-digit code)
TC1221/TC1222
TC1221ECH
TC1222ECH
Code
GA
GB
ex: 1221ECH = G A
1222ECH = G B
3
represents year and 2-month code
4
represents production lot ID code
6.2
Taping Form
Component Taping Orientation for 6-Pin SOT-23A (EIAJ SC-74) Devices
User Direction of Feed
Device
Marking
PIN 1
Standard Reel Component Orientation
For TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package
6-Pin SOT-23A
 2002 Microchip Technology Inc.
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8 mm
4 mm
3000
7 in
DS21367B-page 11
TC1221/TC1222
6.3
Package Dimensions
SOT-23A-6
.075 (1.90)
REF.
.069 (1.75)
.059 (1.50)
.122 (3.10)
.098 (2.50)
.020 (0.50)
.014 (0.35)
.037 (0.95)
REF.
.118 (3.00)
.110 (2.80)
.057 (1.45)
.035 (0.90)
.006 (0.15)
.000 (0.00)
.008 (0.20)
.004 (0.09)
10° MAX.
.024 (0.60)
.004 (0.10)
Dimensions: inches (mm)
DS21367B-page 12
 2002 Microchip Technology Inc.
TC1221/TC1222
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21367B-page13
TC1221/TC1222
NOTES:
DS21367B-page14
 2002 Microchip Technology Inc.
TC1221/TC1222
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
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 2002 Microchip Technology Inc.
DS21367B-page 15
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Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Tel: 630-285-0071 Fax: 630-285-0075
Dallas
4570 Westgrove Drive, Suite 160
Addison, TX 75001
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Kokomo
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-6766200 Fax: 86-28-6766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
Hong Kong
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
New York
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
03/01/02
' #$'
DS21367B-page 16
 2002 Microchip Technology Inc.