FREESCALE MHL19338NN

Freescale Semiconductor
Technical Data
PCS Band
RF Linear LDMOS Amplifier
LIFETIME BUY
Designed for ultra - linear amplifier applications in 50 ohm systems operating
in the PCS frequency band. A silicon FET Class A design provides outstanding
linearity and gain. In addition, the excellent group delay and phase linearity
characteristics are ideal for digital modulation systems, such as TDMA and
CDMA.
• Third Order Intercept: 46 dBm Typ
• Power Gain: 30 dB Typ (@ f = 1960 MHz)
• Input VSWR v 1.5:1
Features
• Excellent Phase Linearity and Group Delay Characteristics
• Ideal for Feedforward Base Station Applications
• RoHS Compliant
MHL19338NN
1900- 2000 MHz
4.0 W, 30 dB
RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1. Absolute Maximum Ratings (TC = 25°C unless otherwise noted)
Symbol
Rating
Value
Unit
DC Supply Voltage
VDD
30
Vdc
RF Input Power
Pin
+10
dBm
Storage Temperature Range
Tstg
- 40 to +100
°C
Operating Case Temperature Range
TC
- 20 to +100
°C
Table 2. Electrical Characteristics (VDD = 28 Vdc, TC = 25°C; 50 Ω System)
Characteristic
Supply Current
Power Gain
(f = 1960 MHz)
Gain Flatness
(f = 1900 - 2000 MHz)
Power Output @ 1 dB Compression
(f = 1950 MHz)
Symbol
Min
Typ
Max
Unit
IDD
—
500
525
mA
Gp
29
30
32
dB
GF
—
0.1
0.4
dB
P1dB
35
36
—
dBm
Third Order Intercept (f1 = 1950 MHz, f2 = 1955 MHz)
ITO
45
46
—
dBm
Noise Figure
NF
—
4.2
4.5
dB
(f = 2000 MHz)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
LAST ORDER 31 DEC 07 LAST SHIP 30 JUN 08
Document Number: MHL19338NN
Rev. 0, 12/2006
MHL19338NN
1
PACKAGE DIMENSIONS
A
A
2X
G
0.020 (0.51)
M
T A
R
1
2
3
4
K
W
0.020 (0.51)
M
4X
D
T B
M
N
L
H
F
E
C
4X
P
0.020 (0.51)
M
T S
A
M
M
NOTES:
1. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION "F" TO CENTER OF LEADS.
S
J
M
S
B
M
Q
0.008 (0.20)
T
SEATING
PLANE
T
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
R
S
W
INCHES
MIN
MAX
1.760
1.780
1.370
1.390
0.245
0.265
0.017
0.023
0.080
0.100
0.086 BSC
1.650 BSC
1.290 BSC
0.266
0.280
0.125
0.165
0.990 BSC
0.390 BSC
0.008
0.013
0.118
0.132
0.535
0.555
0.445
0.465
0.090 BSC
STYLE 1:
PIN 1.
2.
3.
4.
CASE:
MILLIMETERS
MIN
MAX
44.70
45.21
34.80
35.31
6.22
6.73
0.43
0.58
2.03
2.54
2.18 BSC
41.91 BSC
32.77 BSC
6.76
7.11
3.18
4.19
25.15 BSC
9.91 BSC
0.20
0.33
3.00
3.35
13.59
14.10
11.30
11.81
2.29 BSC
RF INPUT
VDD1
VDD2
RF OUTPUT
GROUND
CASE 301AP - 02
ISSUE E
MHL19338NN
2
RF Device Data
Freescale Semiconductor
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
Dec. 2006
Description
• Initial Release of Data Sheet
MHL19338NN
RF Device Data
Freescale Semiconductor
3
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MHL19338NN
Document Number: MHL19338NN
4Rev. 0, 12/2006
RF Device Data
Freescale Semiconductor