Freescale Semiconductor Technical Data Document Number: MHPA18010N Rev. 4, 5/2006 CDMA Band RF Linear LDMOS Amplifier Designed for Class AB amplifier applications in 50 ohm systems operating in the 1800 to 1900 MHz frequency band. A silicon FET design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA and GSM modulation systems. • Typical CDMA Performance: 1840 MHz, 28 Volts IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 • Adjacent Channel Power: - 51 dBc @ 30 dBm Average Power, 885 kHz Channel Spacing • Power Gain: 24.5 dB Min (@ f = 1840 MHz) Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • N Suffix Indicates Lead - Free Terminations MHPA18010N 1805- 1880 MHz 10 W, 24.5 dB RF HIGH POWER LDMOS AMPLIFIER CASE 301AP - 02, STYLE 3 Table 1. Maximum Ratings (TC = 25°C unless otherwise noted) Symbol Value Unit DC Supply Voltage VDD 30 Vdc RF Input Power (Single Carrier CW) Pin +20 dBm Storage Temperature Range Tstg - 40 to +100 °C Operating Case Temperature Range TC - 20 to +100 °C Rating Table 2. Electrical Characteristics (VDD = 28 Vdc, VBIAS ≅ 8 V Set for Supply Current of 600 mA, TC = 25°C, 50 Ω System) Characteristic Supply Current Symbol Min Typ Max Unit IDD — 600 — mA Power Gain (f = 1840 MHz) Gp 24.5 25.5 — dB Gain Flatness (f = 1805 - 1880 MHz) GF — 0.2 0.5 dB Power Output @ 1 dB Comp. (f = 1840 MHz) P1dB — 41.5 — dBm Input VSWR (f = 1805 - 1880 MHz) VSWRin — 1.5:1 2:1 Noise Figure (f = 1840 MHz) NF — 8 10 dB ACPR — - 58 - 51 dBc Adjacent Channel Power Rejection @ 30 dBm Average Power, 1.23 MHz BW, 885 kHz Channel Spacing © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MHPA18010N 1 NOTES MHPA18010N 2 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A A 2X G 0.020 (0.51) M T A R 1 T S 2 3 4 K W 0.020 (0.51) M 4X D T B M N L H F E C 4X P 0.020 (0.51) M A M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION "F" TO CENTER OF LEADS. S J M S B M Q 0.008 (0.20) T SEATING PLANE T DIM A B C D E F G H J K L N P Q R S W INCHES MIN MAX 1.760 1.780 1.370 1.390 0.245 0.265 0.017 0.023 0.080 0.100 0.086 BSC 1.650 BSC 1.290 BSC 0.266 0.280 0.125 0.165 0.990 BSC 0.390 BSC 0.008 0.013 0.118 0.132 0.535 0.555 0.445 0.465 0.090 BSC STYLE 3: PIN 1. 2. 3. 4. CASE: MILLIMETERS MIN MAX 44.70 45.21 34.80 35.31 6.22 6.73 0.43 0.58 2.03 2.54 2.18 BSC 41.91 BSC 32.77 BSC 6.76 7.11 3.18 4.19 25.15 BSC 9.91 BSC 0.20 0.33 3.00 3.35 13.59 14.10 11.30 11.81 2.29 BSC RF INPUT VBIAS VDD RF OUTPUT GROUND CASE 301AP - 02 ISSUE E MHPA18010N RF Device Data Freescale Semiconductor 3 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS- compliant and/or Pb - free versions of Freescale products have the functionality and electrical characteristics of their non - RoHS- compliant and/or non - Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MHPA18010N Document Number: MHPA18010N 4Rev. 4, 5/2006 RF Device Data Freescale Semiconductor