Freescale Semiconductor Technical Data Document Number: MM908E621 Rev 4.0, 6/2007 Integrated Quad Half-Bridge and Triple High-Side with Embedded MCU and LIN for High End Mirror 908E621 QUAD HALF-BRIDGE AND TRIPLE HIGHSIDE SWITCH WITH EMBEDDED MCU AND LIN The 908E621 is an integrated single-package solution that includes a high-performance HC08 microcontroller with a SMARTMOSTM analog control IC. The HC08 includes flash memory, a timer, enhanced serial communications interface (ESCI), an analog-to-digital converter (ADC), serial peripheral interface (SPI) (only internal), and an internal clock generator module. The analog control die provides four half-bridge and three high-side outputs with diagnostic functions, a Hall-Effect sensor input, analog inputs, voltage regulator, window watchdog, and local interconnect network (LIN) physical layer. The single-package solution, together with LIN, provides optimal application performance adjustments and space-saving PCB design. It is well suited for the control of automotive high-end mirrors. DWB SUFFIX 98ARL10519D 54-TERMINAL SOICW-EP Features 100nF High-Performance M68HC908EY16 Core 16 K Bytes of On-Chip Flash Memory, 512 Bytes of RAM Internal Clock Generator Module (ICG) Two 16-Bit, 2-Channel Timers 10-Bit Analog-to-Digital Converter (ADC) LIN Physical Layer Interface Autonomous MCU Watchdog / MCU Supervision One Analog Input with Switchable Current Source Four Low RDS(ON) Half-Bridge Outputs Three Low RDS(ON) High-Side Outputs Wake-Up Input One 2/3-Pin Hall-Effect Sensor Input • 12 Microcontroller I/Os >22µF • • • • • • • • • • • • ORDERING INFORMATION LIN VSUP[1:8] Temperature Range (TA) Package MM908E621ACDWB/R2 -40°C to 85°C 54 SOICW-EP L0 M VSSA/VREFL EVSS VSS PTB3/AD3 PTB4/AD4 PTB5/AD5 µC PortC PTC2/MCLK PTC3/OSC2 PTC4/OSC1 Internally connected µC PortD HB4 HS1 High Side Output 1 HS2 High Side Output 2 HS3 High Side Output 3 HVDD Switched 5V output A0 A0CST PTD0/TACH0 PTD1/TACH1 H0 µC PortE Internally connected PTE1/RxD 4 x Half Bridge Outputs M PTA0/KBD0 PTA1/KBD1 PTA2/KBD2 PTA3/KBD3 PTA4/KBD4 µC PortB M HB3 RST_A RST IRQ_A IRQ µC PortA Wake Up Input HB1 HB2 4,7µF 100nF VDDA/VREFH EVDD VDD Device GND[1:4] EP TESTMODE Analog Input with current source Analog Input current source trim 2-/3-pin hall sensor input Pull to ground for user mode Figure 1. 908E621 Simplified Application Diagram Freescale Semiconductor, Inc. reserves the right to change the detail specifications, as may be required, to permit improvements in the design of its products. © Freescale Semiconductor, Inc., 2007. All rights reserved. 2 Single External IRQ Module 24 Integral System Integration Module PTA6/SS PTA5/SPSCK PTA4/KBD4 PTA3/KBD3 PTA2/KBD2 PTA1/KBD1 PTA0/KBD0 PTB7/AD7/TBCH1 PTB6/AD6/TBCH0 PTB5/AD5 PTB4/AD4 PTB3/AD3 PTB2/AD2 PTB0/AD0 PTB0/AD0 Security Module Power-ON Reset Module VREFH VDDA 10 Bit Analog-toVREFL Digital Converter Module VSSA VDD POWER VSS IRQ RST OSC2 Internal Clock OSC1 Generator Module User Flash Vector Space, 36 Bytes DDRA PORT A PTB0/AD0 ADOUT SPSCK MOSI PTC1/MOSI PTA5/SPSCK MISO SS PWM PTC0/MISO PTA6/SS PTD0/TACH0 TXD PTE0/TXD Analog Multiplexer SPI & CONTROL Autonomous Watchdog Reset Control LIN Physical Layer TESTMODE IRQ_A Figure 2. 908E621 Simplified Internal Block Diagram PTE0/TXD PTE1/RXD PTD0/TACH0 PTD1/TACH1 PTC4/OSC1 PTC3/OSC2 PTC2/MCLK PTC1/MOSI PTC0/MISO BEMF Module Prescaler Module Arbiter Module Periodic Wake-up Timebase Module Configuration Register Module Serial Peripheral Interface Module Computer Operating Properly Module Enhanced Serial Communication Interface Module 2-channel Timer Interface Module B PORT C DDRC FLSVPP PTD1/TACH1 PTC4/OSC1 PTC3/OSC2 PTC2/MCLK PTB5/AD5 PTB4/AD4 PTB3/AD3 PTA4/KBD4 VDDA/VREFH PTA3/KBD3 EVDD 2-channel Timer Interface Module A PTD0/TACH0 RXD PTE1/RXD PTE1/RXD RST_A PTA2/KBD2 EVSS 5-Bit Keyboard Interrupt Module LIN PTA1/KBD1 PTA0/KBD0 VSSA/VREFL VSS A0 A0CST H0 HALLPORT HB4 HB3 HB2 HB1 Analog Port with Current Source Half Bridge Driver & Diagnostic Half Bridge Driver & Diagnostic Half Bridge Driver & Diagnostic Half Bridge Driver & Diagnostic HS3 HS2 High Side Driver & Diagnostic High Side Driver & Diagnostic HS1[a:b] L0 HVDD VDD High Side Driver & Diagnostic Wakeup Port Switched VDD Driver & Diagnostic Voltage Regulator VSUP[1:8] Control and Status Register, 64 Bytes User Flash, 15,872 Bytes User RAM, 512 Bytes Monitor ROM, 310 Bytes Flash programming (Burn-in), ROM 1024 Bytes Single Breakpoint Break Module GND[1:4] M68HC08 CPU CPU ALU Registers INTERNAL BLOCK DIAGRAM INTERNAL BLOCK DIAGRAM PORT D PORT E DDRD DDRE IRQ RST Internal Bus DDRB PORT B 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor TERMINAL CONNECTIONS TERMINAL CONNECTIONS Transparent Top View of Package PTC4/OSC1 PTC3/OSC2 PTC2/MCLK PTB5/AD5 PTB4/AD4 PTB3/AD3 1 54 2 53 3 52 4 51 5 50 6 49 IRQ RST 7 48 8 47 (PTD0/TACH0/BEMF -> PWM) PTD1/TACH1 9 46 10 45 RST_A IRQ_A 11 44 12 43 LIN A0CST A0 GND1 HB4 VSUP1 GND2 HB3 VSUP2 NC NC TESTMODE GND3 HB2 VSUP3 13 14 15 42 Exposed Pad 41 40 16 39 17 38 18 37 19 36 20 35 21 34 22 33 23 32 24 31 25 30 26 29 27 28 PTA0/KBD0 PTA1/KBD1 PTA2/KBD2 FLSVPP PTA3/KBD3 PTA4/KBD4 VDDA/VREFH EVDD EVSS VSSA/VREFL (PTE1/RXD <- RXD) VSS VDD HVDD L0 H0 HS3 VSUP8 HS2 VSUP7 HS1b HS1a VSUP6 VSUP5 GND4 HB1 VSUP4 Figure 3. Terminal Connections Table 1. Terminal Definitions A functional description of each terminal can be found in the Functional Terminal Description section beginning on page 21. Die Terminal Terminal Name Formal Name Definition MCU 1 2 3 PTC4/OSC1 PTC3/OSC2 PTC2/MCLK Port C I/Os These terminals are special-function, bidirectional I/O port terminals that are shared with other functional modules in the MCU. MCU 4 5 6 PTB5/AD5 PTB4/AD4 PTB3/AD3 Port B I/Os These terminals are special-function, bidirectional I/O port terminals that are shared with other functional modules in the MCU. MCU 7 IRQ External Interrupt Input MCU 8 RST External Reset This terminal is bidirectional, allowing a reset of the entire system. It is driven low when any internal reset source is asserted. MCU / Analog 9 (PTD0/TACH0/BEMF -> PWM) PWM signal This terminal is the PWM signal test terminal. It internally connects the MCU PTD0/TACH0 terminal with the Analog die PWM input. This terminal is an asynchronous external interrupt input terminal. Note: Do not connect in the application. MCU 10 PTD1/TACH1 Port D I/Os MCU / Analog 44 (PTE1/RXD <- RXD) LIN Transceiver Output This terminal is a special-function, bidirectional I/O port terminal that is shared with other functional modules in the MCU. This terminal is the LIN Transceiver output test terminal. It internally connects the MCU PTE1/RXD terminal with the Analog die LIN transceiver output terminal RXD. Note: Do not connect in the application. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 3 TERMINAL CONNECTIONS Table 1. Terminal Definitions (continued) A functional description of each terminal can be found in the Functional Terminal Description section beginning on page 21. Die Terminal Terminal Name Formal Name Definition MCU 45 VSSA/VREFL VDDA/VREFH ADC Supply and 48 Reference Terminals These terminals are the power supply and voltage reference terminals for the analog-to-digital converter (ADC). MCU 46 47 EVSS EVDD MCU Power Supply Terminals These terminals are the ground and power supply terminals, respectively. The MCU operates from a single power supply. MCU 49 50 52 53 54 PTA4/KBD4 PTA3/KBD3 PTA2/KBD2 PTA1/KBD1 PTA0/KBD0 Port A I/Os MCU 51 FLSVPP Test Terminal For test purposes only. Do not connect in the application. Analog 11 RST_A Internal Reset This terminal is the bidirectional reset terminal of the analog die. Analog 12 IRQ_A Internal Interrupt Output This terminal is the interrupt output terminal of the analog die indicating errors or wake-up events. Analog 13 LIN LIN Bus This terminal represents the single-wire bus transmitter and receiver. Analog 14 A0CST Analog Input Trim Terminal Analog 15 A0 Analog 16 19 25 30 GND1 GND2 GND3 GND4 Power Ground Terminals Analog 29 26 20 17 HB1 HB2 HB3 HB4 Half-Bridge Outputs Analog 18 21 27 28 31 32 35 VSUP1 VSUP2 VSUP3 VSUP4 VSUP5 VSUP6 VSUP7 Power Supply Terminals – 22 23 NC NC No Connect Analog 24 TESTMODE TESTMODE Input Analog 34 35 HS1a HS1b High-Side HS1 Output This output terminal is a low RDS(ON) high-side switch. Analog 36 HS2 These output terminals are low RDS(ON) high-side switches. 38 HS3 High-Side HS2 Output High-Side HS3 Output Analog 39 H0 Hall-Effect Sensor / General Purpose Input Analog 40 L0 Wake-up Input This terminal provides an high voltage input, which is wake-up capable. Analog 41 HVDD Switchable VDD Output This terminal is a switchable VDD output for driving resistive loads requiring a regulated 5.0 V supply; e.g. potentiometers. These terminals are special-function, bidirectional I/O port terminals that are shared with other functional modules in the MCU. This is the Analog Input Trim Terminal for the A0 input. This is to connect a known fixed resistor value to trim the current source measurement. Analog Input Terminal This terminal is an analog input port with selectable source values. These terminals are device power ground connections. This device includes power MOSFETs configured as four half-bridge driver outputs. These outputs may be configured for DC motor drivers, or as high-side and low-side switches. Note: The HB3 and HB4 have a lower RDS(ON) then HB1 and HB2. These terminals are device power supply terminals. These terminals are not connected. Terminal for test purpose only. In application this terminal needs to be tied GND. This terminal provides an input for a Hall-effect sensor or general purpose input. 908E621 4 Analog Integrated Circuit Device Data Freescale Semiconductor TERMINAL CONNECTIONS Table 1. Terminal Definitions (continued) A functional description of each terminal can be found in the Functional Terminal Description section beginning on page 21. Die Terminal Terminal Name Formal Name Definition Analog 42 VDD Voltage Regulator Output The +5.0 V voltage regulator output terminal is intended to supply the embedded microcontroller. Analog 43 VSS Voltage Regulator Ground Ground terminal for the connection of all non-power ground connections (microcontroller and sensors). – EP Exposed Pad Exposed Pad The exposed pad terminal on the bottom side of the package conducts heat from the chip to the PCB board. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 5 MAXIMUM RATINGS MAXIMUM RATINGS Table 2. Maximum Ratings All voltages are with respect to ground unless otherwise noted. Exceeding limits on any terminal may cause permanent damage to the device. Rating Symbol Value Unit Analog Chip Supply Voltage under Normal Operation (Steady-State) VSUP(SS) -0.3 to 28 Analog Chip Supply Voltage under Transient Conditions (1) VSUP(PK) -0.3 to 40 VDD -0.3 to 5.5 VIN(ANALOG) -0.3 to 5.5 VIN(MCU) VSS -0.3 to VDD +0.3 All Terminals except VDD, VSS, PTA0:PTA4 IPIN(1) ±15 PTA0:PTA4 IPIN(2) ±25 Maximum Microcontroller VSS Output Current IMVSS 100 mA Maximum Microcontroller VDD Input Current IMVDD 100 mA Normal Operation (Steady-State) VBUS(SS) -18 to 40 Transient Input Voltage (per ISO7637 Specification) and with External Components (Figure 4, page 18) VBUS(PK) -150 to 100 Human Body Model H0 terminal VESD1-1 ±1000 Human Body Model all other terminals VESD1-2 ±2000 ELECTRICAL RATINGS Supply Voltage MCU Chip Supply Voltage V Input Terminal Voltage Analog Chip Microcontroller Chip V Maximum Microcontroller Current per Terminal mA LIN Supply Voltage V ESD Voltage (2) V Machine Model VESD2 ±200 Charge Device Model VESD3 ±750 Notes 1. Transient capability for pulses with a time of t < 0.5 sec. 2. ESD1 testing is performed in accordance with the Human Body Model (CZAP = 100 pF, RZAP = 1500 Ω), the Machine Model (CZAP =200 pF, RZAP = 0 Ω) and the Charge Device Model, Robotic (CZAP = 4.0 pF). 908E621 6 Analog Integrated Circuit Device Data Freescale Semiconductor MAXIMUM RATINGS Table 2. Maximum Ratings (continued) All voltages are with respect to ground unless otherwise noted. Exceeding limits on any terminal may cause permanent damage to the device. Rating Symbol Value Unit Operating Ambient Temperature (3) TA -40 to 85 °C Operating Junction Temperature (4) TJ -40 to 125 °C Storage Temperature TSTG -40 to 150 °C Peak Package Reflow Temperature During Reflow (6), (7) TPPRT Note 7 °C THERMAL RATINGS Notes 3. The limiting factor is junction temperature; taking into account the power dissipation, thermal resistance, and heat sinking. 4. The temperature of analog and MCU die is strongly linked via the package, but can differ in dynamic load conditions, usually because of higher power dissipation on the analog die. The analog die temperature must not exceed 150°C under these conditions. 5. Terminal soldering temperature is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. 6. Pin soldering temperature limit is for 10 seconds maximum duration. Not designed for immersion soldering. Exceeding these limits may cause malfunction or permanent damage to the device. 7. Freescale’s Package Reflow capability meets Pb-free requirements for JEDEC standard J-STD-020C. For Peak Package Reflow Temperature and Moisture Sensitivity Levels (MSL), Go to www.freescale.com, search by part number [e.g. remove prefixes/suffixes and enter the core ID to view all orderable parts. (i.e. MC33xxxD enter 33xxx), and review parametrics. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 7 STATIC ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit Nominal Operating Voltage VSUP1 9.0 — 16 V Extended Operating Voltage (LIN only 8..18V)(9) VSUP2 7.5 — 20 V IRUN — 25 — mA ISTOP — 40 50 µA ISLEEP — 12 20 µA Low-state Output Voltage (IOUT = -1.5 mA) VOL – – 0.4 High-state Output Voltage (IOUT = 250 uA) VOH 3.85 – – COUT – 4.0 – Input Logic Low Voltage VIL – – 1.5 Input Logic High Voltage VIH 3.5 – – CIN – 4.0 – pF Terminals IRQ_A, RST_A - Pullup Resistor RPULLUP1 – 10 – kOhm Terminals SS - Pullup Resistor RPULLUP2 – 100 – kOhm RPULLDOWN – 100 – kOhm IPULLUP – 35 – µA SUPPLY VOLTAGE RANGE SUPPLY CURRENT RANGE Normal Mode (9) VSUP = 12 V, Analog Chip in Normal Mode (PSON=1), MCU Operating Using Internal Oscillator at 32 MHz (8.0 MHz Bus Frequency), SPI, ESCI, ADC Enabled Stop Mode (9), (10) VSUP = 12 V, Voltage Regulator with limited current capability Sleep Mode (9), (10) VSUP = 12 V, Voltage Regulator off DIGITAL INTERFACE RATINGS (ANALOG DIE) Output terminals RST_A, IRQ_A, RXD (MISO probe only) V Output terminal RXD - Capacitance (11) Input terminals RST_A, PWM (SS, MOSI, TXD probe only) V Input terminals - Capacitance (11) Terminals MOSI, SPSCK, PWM - Pull-down Resistor Terminal TXD - PULLup Current Source pF Notes 8. Device is fully functional, but some of the parameters might be out of spec. 9. Total current measured at GND terminals. 10. Stop and Sleep mode current will increase if VSUP exceeds 15 V. 11. This parameter is guaranteed by process monitoring but is not production tested. 908E621 8 Analog Integrated Circuit Device Data Freescale Semiconductor STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit VLVRON 3.8 4.2 4.65 V VLVR_HYS 50 – 300 mV Threshold VLVION 6.0 – 7.5 Hysteresis VLVI_HYS 0.3 – 0.8 Threshold VHVION 20 – 24 Hysteresis VHVI_HYS 0.5 – 1.5 TION 125 – 150 TIH 5.0 – 10.0 TRON 155 – 180 TIH 5.0 – 10.0 IOUT = 60 mA, 7.5V < VSUP < 20V VDDRUN1 4.75 5.0 5.25 IOUT = 60 mA, VSUP < 7.5V and VSUP > 20V VDDRUN2 4.75 5.0 5.25 IOUTRUN – 120 150 mA VLR – – 100 mV STOP Mode Output Voltage (14) VDDSTOP 4.75 5.0 5.25 V STOP Mode Total Output Current IOUTSTOP 150 500 850 uA SYSTEM RESETS AND INTERRUPTS Low Voltage Reset (LVR) Threshold Hysteresis Low Voltage Interrupt (LVI) V V High Voltage Interrupt (HVI) °C High Temperature Interrupt (HTI) (12) Threshold TJ Hysteresis °C High Temperature Reset (HTR) (12) Threshold TJ Hysteresis VOLTAGE REGULATOR (13) V Normal Mode Output Voltage (14) Normal Mode Total Output Current Load Regulation - IOUT = 60 mA, VSUP = 9V, TJ = 125°C Notes 12. This parameter is guaranteed by process monitoring but is not production tested. 13. Specification with external low ESR ceramic capacitor 1.0 µF< C < 4.7 µF and 200 mΩ ≤ ESR ≤ 10 Ω. Its not recommended to use capacitor values above 4.7 µF 14. When switching from Normal to Stop mode or from Stop mode to Normal mode, the output voltage can vary within the output voltage specification. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 9 STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit Recessive State, TXD HIGH, IOUT = 1.0 µA V LIN_REC VSUP -1 — — Dominant State, TXD LOW, 500 Ω External Pullup Resistor V LIN_DOM — — 1.4 Normal Mode Pullup Resistor to VSUP R PU 20 30 47 kΩ Stop, Sleep Mode Pullup Current Source IPU — 20 — µA Output Current Shutdown Threshold IBLIM 100 230 280 mA Output Current Shutdown Timing IBLS 5.0 – 40 µs µA LIN PHYSICAL LAYER LIN Transceiver Output Voltage V Leakage Current to GND IBUS – 1.0 10 IBUS-PAS-REC 0.0 3.0 20 µA IBUS-NOGND -1.0 – 1.0 mA Receiver Threshold Dominant VBUS_DOM – – 0.4 Receiver Threshold Recessive VBUS_REC 0.6 – – Receiver Threshold Center VBUS_CNT 0.475 0.5 0.525 Receiver Threshold Hysteresis VBUS_HYS – – 0.175 VSUP Disconnected, VBUS at 18V Recessive state, 8V ≤ VSUP ≤ 18V, 8V ≤ VBUS ≤ 18V, VBUS ≥ VSUP GND Disconnected, VGND = VSUP, VBUS at -18V VSUP LIN Receiver 908E621 10 Analog Integrated Circuit Device Data Freescale Semiconductor STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit RDS(ON)-HS1 – 185 225 IHSOC1 6.0 – 9.0 A tOCB – 4-8 – µs CRRATIOHS1 0.84 1.2 1.56 V/A fPWMHS – – 25 kHz VHSF – 0.9 – V ILeakHS – <0.2 10 µA RDS(ON)-HS23 – 440 500 IHSOC23 3.6 – 5.6 A tOCB – 4-8 – µs CRRATIOHS23 1.16 1.66 2.16 V/A fPWMHS – – 25 kHz VHSF – 0.9 – V ILeakHS – <0.2 10 µA HIGH-SIDE OUTPUT HS1 Switch On Resistance mΩ TJ = 25°C, ILOAD = 1.0 A Overcurrent Shutdown Overcurrent Shutdown blanking time Current to Voltage Ratio (15) (16) VADOUT [V] / IHS [A], (measured and trimmed IHS = 2 A) High-Side Switching Frequency (15) High-Side Free-Wheeling Diode Forward Voltage TJ = 25°C, ILOAD = 1 A Leakage Current HIGH-SIDE OUTPUTS HS2 AND HS3(17) Switch On Resistance mΩ TJ = 25°C, ILOAD = 1.0 A Overcurrent Shutdown Overcurrent Shutdown blanking time (15) Current to Voltage Ratio (16) VADOUT [V] / IHS [A], (measured and trimmed IHS = 2 A) High-Side Switching Frequency (15) High-Side Free-Wheeling Diode Forward Voltage TJ = 25°C, ILOAD = 1 A Leakage Current Notes 15. This parameter is guaranteed by process monitoring but is not production tested. 16. This parameter is guaranteed only if correct trimming was applied. 17. The high-side HS3 can be only used for resistive loads. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 11 STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max High-Side, TJ = 25°C, ILOAD = 1.0 A – 750 900 Low-Side, TJ = 25°C, ILOAD = 1.0 A – 750 900 High-Side 1.0 – 1.5 Low-Side 1.0 – 1.5 Unit HALF-BRIDGE OUTPUTS HB1 AND HB2 Switch On Resistance Overcurrent Shutdown mΩ RDS(ON)-HB12 IHBOC12 A Overcurrent Shutdown blanking time (18) tOCB – 4-8 – µs Switching Frequency (18) fPWM – – 25 kHz High-Side, TJ = 25°C, ILOAD = 1.0 A VHSF – 0.9 – Low-Side, TJ = 25°C, ILOAD = 1.0 A VLSF – 0.9 – ILeakHB – <0.2 10 VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 200 mA) 17.5 25.0 32.5 VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 500 mA) 3.5 5.0 6.5 High-Side, TJ = 25°C, ILOAD = 1.0 A – 275 325 Low-Side, TJ = 25°C, ILOAD = 1.0 A – 275 325 High-Side 4.8 – 7.2 Low-Side 4.8 – 7.2 Free-Wheeling Diode Forward Voltage Leakage Current Low-Side Current to Voltage Ratio (19) V CRRATIOHB12 µA V/A HALF-BRIDGE OUTPUTS HB3 AND HB4 Switch On Resistance Overcurrent Shutdown RDS(ON)-HB34 mΩ IHBOC34 A Overcurrent Shutdown blanking time (18) tOCB – 4-8 – µs Switching Frequency (18) fPWM – – 25 kHz High-Side, TJ = 25°C, ILOAD = 1.0 A VHSF – 0.9 – Low-Side, TJ = 25°C, ILOAD = 1.0 A VLSF – 0.9 – ILeakHB – <0.2 10 Free-Wheeling Diode Forward Voltage Leakage Current Low-Side Current to Voltage Ratio (19) V µA V/A CRRATIOHB34 VADOUT [V] / IHB [A], CSA = 1, (measured and trimmed IHB = 500 mA) 3.5 5.0 6.5 VADOUT [V] / IHB [A], CSA = 0, (measured and trimmed IHB = 2 A) 0.7 1.0 1.3 Notes 18. This parameter is guaranteed by process monitoring but is not production tested. 19. This parameter is guaranteed only if correct trimming was applied 908E621 12 Analog Integrated Circuit Device Data Freescale Semiconductor STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit Overcurrent Shutdown IHVDDOC 25 35 50 mA Overcurrent Shutdown Blanking Time (20) tHVDDOCB HVDDT1:0 = 00 – 950 – HVDDT1:0 = 01 – 536 – HVDDT1:0 = 10 – 234 – HVDDT1:0 = 11 – 78 – SWITCHABLE VDD OUTPUT HVDD µs Overcurrent Flag Delay (20) tHVDDOCFD – 0.5 – ms Drop-Out Voltage @ ILOAD = 20 mA VHVDDDROP – 110 300 mV RATIOVSUP 4.75 5.0 5.25 – Voltage / Temperature Slope (20) STtoV – 26 – mV/°C Output Voltage @25°C VT25 1.7 1.9 2.1 V VSUP DOWN SCALER (21) Voltage Ratio (RATIO VSUP = VSUP / VADOUT) INTERNAL DIE TEMPERATURE SENSOR (21) Notes 20. This parameter is guaranteed by process monitoring but is not production tested. 21. This parameter is guaranteed only if correct trimming was applied 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 13 STATIC ELECTRICAL CHARACTERISTICS Table 3. Static Electrical Characteristics (continued) All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit Input Voltage Low Threshold VLT – – 1.5 V Input Voltage High Threshold VHT 3.5 – – V Input Voltage Hysteresis VHH 100 – 500 mV Pullup resistor RPH 7.0 10 13 kΩ VSUP < 17V VHALL1 – VSUP-1.2 – VSUP >17V VHALL2 – – 15.8 Output Drop @ IOUT = 15mA VH0D – – 2.5 V Sense Current Threshold IHSCT 6.0 7.9 10 mA Sense Current Hysteresis IHSCH 600 1650 µA Sense Current Limitation VHSCLIM 20 40 70 mA CSSEL1:0 = 00 ICS1 – 40 – CSSEL1:0 = 01 ICS2 – 120 – ICS3 – 320 – ICS4 – 800 – Input Voltage Threshold Low VLT – – 1.5 V Input Voltage Threshold High VHT 3.5 – – V Input Voltage Hysteresis VLH 0.5 – – V IN -10 – 10 µA tWUP – 20 – µs HALL-EFFECT SENSOR INPUT H0 - GENERAL PURPOSE INPUT MODE (H0MS = 0) HALL-EFFECT SENSOR INPUT H0 - 2PIN HALL SENSOR INPUT MODE (H0MS = 1) Output Voltage V ANALOG INPUT A0, A0CST µA Current Source A0, A0CST (22) (23) CSSEL1:0 = 10 CSSEL1:0 = 11 WAKE-UP INPUT L0 Input Current Wake-Up Filter Time (24) Notes 22. This parameter is guaranteed only if correct trimming was applied 23. The current values are optimized to read a NTC temperature sensor, e.g. EPCOS type B57861 (R25 = 3000Ω, R/T characteristic 8016) 24. This parameter is guaranteed by process monitoring but is not production tested. 908E621 14 Analog Integrated Circuit Device Data Freescale Semiconductor DYNAMIC ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics All characteristics are for the analog chip only. Please refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit Dominant Propagation Delay TXD to LIN t DOM-MIN — — 50 µs Dominant Propagation Delay TXD to LIN t DOM-MAX — — 50 µs Recessive Propagation Delay TXD to LIN t REC-MIN — — 50 µs Recessive Propagation Delay TXD to LIN t REC-MAX — — 50 µs Duty Cycle 1: D1 = tBus_rec(min) / (2 x tBIT), tBIT = 50 µs, VSUP = 7.0V..18V D1 0.396 – – Duty Cycle 2: D2 = tBus_rec(max) / (2 x tBIT), tBIT = 50 µs, VSUP = 7.6V..18V D2 – – 0.581 Dominant Propagation Delay TXD to LIN t DOM-MIN — — 100 µs Dominant Propagation Delay TXD to LIN t DOM-MAX — — 100 µs Recessive Propagation Delay TXD to LIN t REC-MIN — — 100 µs Recessive Propagation Delay TXD to LIN t REC-MAX — — 100 µs Duty Cycle 3: D3 = tBus_rec(min) / (2 x tBIT), tBIT = 96 µs, VSUP = 7.0V..18V D3 0.417 – – Duty Cycle4: D4 = tBus_rec(max) / (2 x tBIT), tBIT = 96 µs, VSUP = 7.6V..18V D4 – – 0.590 SRFAST — 20 — V/µs Receiver Dominant Propagation Delay (28) t RL — 3.5 6.0 µs Receiver Recessive Propagation Delay (28) t RH — 3.5 6.0 µs t R-SYM -2.0 — 2.0 µs t PROPWL 30 50 150 µs t WAKE — 20 — µs LIN PHYSICAL LAYER Driver Characteristics for Normal Slew Rate (25), (26) Driver Characteristics for Slow Slew Rate (25), (27) Driver Characteristics for Fast Slew Rate LIN High Slew Rate (Programming Mode) Receiver Characteristics and Wake-Up Timings Receiver Propagation Delay Symmetry Bus Wake-Up Deglitcher Bus Wake-Up Event Reported (29) Notes 25. VSUP from 7.0 V to 18 V, bus load R0 and C0 1.0 nF/1.0 kΩ, 6.8 nF/660 Ω, 10 nF/500 Ω. Measurement thresholds: 50% of TXD signal to LIN signal threshold defined at each parameter. 26. See Figure 6, page 18. 27. See Figure 7, page 19. 28. Measured between LIN signal threshold VIL or VIH and 50% of RXD signal. 29. t WAKE is typically 2 internal clock cycles after LIN rising edge detected. See Figure 9 and Figure 8, page 19. In Sleep mode the VDD rise time is strongly dependent upon the decoupling capacitor at VDD terminal. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 15 DYNAMIC ELECTRICAL CHARACTERISTICS Table 4. Dynamic Electrical Characteristics (continued) All characteristics are for the analog chip only. Please refer to the 68HC908EY16 datasheet for characteristics of the microcontroller chip. Characteristics noted under conditions 9.0 V ≤ VSUP ≤ 16 V, -40°C ≤ TJ ≤ 125°C unless otherwise noted. Typical values noted reflect the approximate parameter mean at TA = 25°C under nominal conditions unless otherwise noted. Characteristic Symbol Min Typ Max Unit f SPIOP 0.25 — 4.0 MHz tRST 0.8 1.25 1.94 ms tNORMREQ 51 80 124 ms Watchdog Period (WDP1:0 = 00) tWD80 52 80 124 ms Watchdog Period (WDP1:0 = 01) tWD40 26 40 62 ms Watchdog Period (WDP1:0 = 10) tWD20 13 20 31 ms Watchdog Period (WDP1:0 = 11) tWD10 6.5 10 15.5 ms SPI INTERFACE TIMING SPI Operating Recommended Frequency (30) State Machine Reset Low-Level Duration after VDD High Normal Request Time-out Window Watchdog Timer (31) Notes 30. This parameter is guaranteed by process monitoring but is not production tested. 31. This parameter is guaranteed only if correct trimming was applied. Additionally See Watchdog Period Range Value (AWD Trim) on page 49 908E621 16 Analog Integrated Circuit Device Data Freescale Semiconductor MICROCONTROLLER PARAMETRICS MICROCONTROLLER PARAMETRICS Table 5. Microcontroller For a detailed microcontroller description, refer to the MC68HC908EY16 datasheet. Module Description Core High Performance HC08 Core with a Maximum Internal Bus Frequency of 8.0 MHz Timer Two 16-Bit Timers with 2 Channels (TIM A and TIM B) Flash 16 K Bytes RAM 512 Bytes ADC 10-Bit Analog-to-Digital Converter SPI SPI Module ESCI Standard Serial Communication Interface (SCI) Module Bit-Time Measurement Arbitration Prescaler with Fine Baud-Rate Adjustment ICG Internal Clock Generation Module 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 17 TIMING DIAGRAMS TIMING DIAGRAMS Transient Pulse Generator LIN, L0 10k 1nF Note: Waveform in accordance to ISO7637 part 1, test pulses 1, 2, 3a and 3b. Figure 4. Test Circuit for Transient Test Pulses VSUP VSUP R0 TXD LIN RXD C0 R0R0 and C0C0 Combinations: and combinations: • 1.0 kΩ and 1.0 nF - 1k Ohm and 1nF • 600 Ω Ohm and 6.8 - 660 andnF 6.8nF • 500 Ω Ohm and 10 - 500 andnF10nF Figure 5. Test Circuit for LIN Timing Measurements TXD tREC-MAX VLIN tDOM-MIN 58.1% VSUP LIN 74.4% VSUP 40% VSUP 60% VSUP 28.4% VSUP 42.2% VSUP tDOM-MAX tREC-MIN RXD tRL tRH Figure 6. LIN Timing Measurements for Normal Slew Rate 908E621 18 Analog Integrated Circuit Device Data Freescale Semiconductor TIMING DIAGRAMS TXD tREC-MAX VLIN tDOM-MIN 61.6% VSUP LIN 77.8% VSUP 40% VSUP 60% VSUP 25.1% VSUP 38.9% VSUP tDOM-MAX tREC-MIN RXD tRL tRH Figure 7. LIN Timing Measurements for Slow Slew Rate VLIN_REC Vrec LIN 0.4VSUP 0.4 VSUP Dominant Level Dominant level IRQ_A tTpropWL PROPWL tTwake WAKE Figure 8. Wake-Up Stop Mode Timing Vrec VLIN_REC LIN 0.4VSUP 0.4 V SUP Dominant Level Dominant level VDD tTpropWL PROPWL tTwake WAKE Figure 9. Wake-Up Sleep Mode Timing 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 19 TIMING DIAGRAMS VSUP VDD RST_A TRST TNORMREQ Figure 10. Power On Reset and Normal Request Time-out Timing 908E621 20 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DESCRIPTION INTRODUCTION FUNCTIONAL DESCRIPTION INTRODUCTION The 908E621 was designed and developed as a highly integrated and cost-effective solution for automotive and industrial applications. For automotive body electronics, the 908E621 is well suited to perform complete mirror control via a three-wire LIN bus. This device combines an HC908EY16 MCU core with flash memory together with a SmartMOS IC chip. The SmartMOS IC chip combines power and control in one chip. Power switches are provided on the SmartMOS IC configured as half-bridge outputs and three high-side switches. Other ports are also provided, which include one Hall-effect sensor input port, one analog input port with a switched current source, one wake-up terminal, and a selectable HVDD terminal. An internal voltage regulator provides power to the MCU chip. Also included in this device is a LIN physical layer, which communicates using a single wire. This enables this device to be compatible with three-wire bus systems, where one wire is used for communication, one for battery, and one for ground. FUNCTIONAL TERMINAL DESCRIPTION See Figure 2, 908E621 Simplified Internal Block Diagram, page 2, for a graphic representation of the various terminals referred to in the following paragraphs. Also, see the terminal diagram on page 3 for a depiction of the terminal locations on the package. PORT A I/O TERMINALS These terminals are special-function, bidirectional I/O port terminals that are shared with other functional modules in the MCU. PTA0:PTA4 are shared with the keyboard interrupt terminals, KBD0:KBD4. The PTA5/SPSCK terminal is not accessible in this device and is internally connected to the SPI clock terminal of the analog die. The PTA6/SS terminal is not accessible in this device and is internally connected to the SPI slave select input of the analog die. For details refer to the 68HC908EY16 datasheet. PORT B I/O TERMINALS These terminals are special-function, bidirectional I/O port terminals that are shared with other functional modules in the MCU. All terminals are shared with the ADC module. PTB0/AD0 is internally connected to the ADOUT terminal of the analog die, allowing diagnostic measurements to be calculated; e.g., current recopy, VSUP, etc. The PTB1/AD1, PTB2/AD2, PTB6/AD6/TBCH0, PTB7/ AD7/TBCH1 terminals are not accessible in this device. For details refer to the 68HC908EY16 datasheet. PORT C I/O TERMINALS These terminals are special-function, bidirectional I/O port terminals that are shared with other functional modules in the MCU. For example, PTC2:PTC4 are shared with the ICG module. PTC0/MISO and PTC1/MOSI are not accessible in this device and are internally connected to the MISO and MOSI SPI terminals of the analog die. For details refer to the 68HC908EY16 datasheet. PORT D I/O TERMINALS PTD0/TACH0/BEMF and PTD1/TACH1 are specialfunction, bidirectional I/O port terminals that can also be programmed to be timer terminals. PTD0/TACH0 terminal is internally connected to the PWM input of the analog die and only accessible for test purposes (can not be used in the application). For details refer to the 68HC908EY16 datasheet. PORT E I/O TERMINAL PTE0/TXD and PTE1/RXD are special-function, bidirectional I/O port terminals that can also be programmed to be enhanced serial communication. PTE0/TXD is internally connected to the TXD terminal of the analog die. The connection for the receiver must be done externally. PTE1/RXD is internally connected to the RXD terminal of the analog die and only accessible for test purposes (can not be used in the application). For details refer to the 68HC908EY16 datasheet. EXTERNAL INTERRUPT TERMINAL (IRQ) The IRQ terminal is an asynchronous external interrupt terminal. This terminal contains an internal pullup resistor that is always activated, even when the IRQ terminal is pulled LOW. For details refer to the 68HC908EY16 datasheet. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 21 FUNCTIONAL DESCRIPTION FUNCTIONAL TERMINAL DESCRIPTION EXTERNAL RESET TERMINAL (RST) HALL-EFFECT SENSOR INPUT TERMINAL (H0) A logic [0] on the RST terminal forces the MCU to a known startup state. RST is bidirectional, allowing a reset of the entire system. It is driven LOW when any internal reset source is asserted. The Hall-effect sensor input terminal H0 provides an input for Hall-effect sensors (2pin or 3pin) or a switch. This terminal contains an internal pullup resistor that is always activated, even when the reset terminal is pulled LOW. For details refer to the 68HC908EY16 datasheet. These terminals are analog inputs with selectable current source values. The A0CST is intent to trim the A0 input. POWER SUPPLY TERMINALS (VSUP1:VSUP8) This terminal is 40V rated input. It can be used as wake-up source for a system wake-up. The input is falling or rising edge sensitive. VSUP1:VSUP8 are device power supply terminals. The nominal input voltage is designed for operation from 12 V systems. Owing to the low ON-resistance and current requirements of the half-bridge driver outputs and high-side output drivers, multiple VSUP terminals are provided. All VSUP terminals must be connected to get full chip functionality. POWER GROUND TERMINALS (GND1:GND4) GND1:GND4 are device power ground connections. Owing to the low ON-resistance and current requirements of the half-bridge driver outputs and high-side output drivers, multiple terminals are provided. GND1 and GND2 terminals must be connected to get full chip functionality. HALF-BRIDGE OUTPUT TERMINALS (HB1:HB4) The 908E621 device includes power MOSFETs configured as four half-bridge driver outputs. The HB3:HB4 have a lower RDS(ON), to run higher currents (e.g. fold motor), than the HB1:B2 outputs. ANALOG INPUT TERMINALS (A0, A0CST) WAKE-UP INPUT TERMINAL (L0) Important: If unused this terminal should be connected to VSUP or GND to avoid parasitic transitions. In Low Power Mode this could lead to random wake-up events. SWITCHABLE VDD OUTPUT TERMINAL (HVDD) The HVDD terminal is a switchable VDD output for driving resistive loads requiring a regulated 5.0 V supply; e.g., 3-terminal Hall-effect sensors or potentiometers. The output is short-circuit protected. LIN BUS TERMINAL (LIN) The LIN terminal represents the single-wire bus transmitter and receiver. It is suited for automotive bus systems and is based on the LIN bus specification. +5.0 V VOLTAGE REGULATOR OUTPUT TERMINAL (VDD) The VDD terminal is needed to place an external capacitor to stabilize the regulated output voltage. The VDD terminal is intended to supply the embedded microcontroller. The HB1:HB4 outputs are short-circuit and overtemperature protected, and they feature current recopy. Over current protection is done on both high-side and lowside FET’s. The current recopy are done on the low-side MOSFETs. Important The VDD terminal should not be used to supply other loads; use the HVDD terminal for this purpose. The VDD, EVDD and VDDA/VREFH terminals must be connected together. HIGH-SIDE OUTPUT TERMINALS (HS1:HS3) VOLTAGE REGULATOR GROUND TERMINAL (VSS) The HS output terminals are a low RDS(ON) high-side switches. Each HS switch is protected against overtemperature and overcurrent. The output is capable of limiting the inrush current with an automatic PWM or feature a real PWM capability using the PWM input. The VSS terminal is the ground terminal for the connection of all non-power ground connections (microcontroller and sensors). Important VSS, EVSS and VSSA/VREFL terminals must be connected together. The HS1 has a lower RDS(ON), to run higher currents (e.g. heater), than the HS2 and HS3 outputs. RESET TERMINAL (RST_A) For the HS1 two terminals (HS1a:HS1b) are necessary for the current capability and have to be connected externally. RST_A is the bidirectional reset terminal of the analog die. It is an open drain with pullup resistor and must be connected to the RST terminal of the MCU. Important: The HS3 can be only used to drive resistive loads. 908E621 22 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DESCRIPTION FUNCTIONAL TERMINAL DESCRIPTION INTERRUPT TERMINAL (IRQ_A) TEST MODE TERMINAL (TESTMODE) IRQ_A is the interrupt output terminal of the analog die indicating errors or wake-up events. It is an open drain with pullup resistor and must be connected to the IRQ terminal of the MCU. This terminal is for test purpose only. In the application this terminal has to be forced to GND. ADC SUPPLY/REFERENCE TERMINALS (VDDA/ VREFH AND VSSA/VREFL) VDDA and VSSA are the power supply terminals for the analog-to-digital converter (ADC). For Programming/Test this terminal has to be forced to VDD to bring the analog die into Test mode. In Test mode the Reset Time-out (80ms) is disabled and the LIN receiver is disabled NOTE: After detecting a RESET (internal or external) the PSON bit needs to be set within 80ms. If not the device will automatically enter sleep mode. VREFH and VREFL are the reference voltage terminals for the ADC. The supply and reference signals are internally connected. It is recommended that a high quality ceramic decoupling capacitor be placed between these terminals. For details refer to the 68HC908EY16 datasheet. MCU POWER SUPPLY TERMINALS (EVDD AND EVSS) MCU TEST TERMINAL (FLSVPP) This terminal is for test purposes only. This terminal should be either left open (not connected) or can be connected to GND. NO CONNECT TERMINALS (NC) The NC terminals are not connected internally. EVDD and EVSS are the power supply and ground terminals. The MCU operates from a single power supply. Note: Each of the NC terminals can be left open or connected to ground (recommended). Fast signal transitions on MCU terminals place high, shortduration current demands on the power supply. To prevent noise problems, take special care to provide power supply bypassing at the MCU. EXPOSED PAD TERMINAL For details refer to the 68HC908EY16 datasheet. The exposed pad terminal on the bottom side of the package conducts heat from the chip to the PCB board. For thermal performance the pad must be soldered to the PCB board. It is recommended that the pad be connected to the ground potential. VDDA/VREFH EVDD VDD 0,1µF µC Analog Die 4,7µF EVSS VSS VSSA/VREFL 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 23 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES 908E621 ANALOG DIE MODES OF OPERATION The different modes can be selected by the STOP and SLEEP bits in the System Control Register. Figure 11 describes how transitions are done between the different operating modes and Table 6, page 26, gives an overview of the operating modes. RESET VDD High and Reset Delay (tRST) expired Normal Request PSON = 0 and Normal Request timeout (tNORMREQ) expired Reset (LVR, HTR, WDR, ext. Reset) PSON = 1 VDD Low NORMAL SLEEP Command Wake-Up Interrupt Power Up TESTMODE = 1 Power Down STOP Command The 908E621 offers three operating modes: Normal (Run), Stop, and Sleep. In Normal mode the device is active and is operating under normal application conditions. The Stop and Sleep modes are low power modes with wake-up capabilities. Wake-Up (Reset) Reset (LVR, ext. Reset) SLEEP STOP Reset (LVR, ext. Reset, (HTR)) Figure 11. Operating Modes and Transitions Normal Mode This Mode is normal operating mode of the device, all functions and power stages are active and can be enabled/ disabled. The voltage regulator provides the +5V VDD to the MCU. After a reset (e.g. Power On Reset, Wake-Up from Sleep) the MCU has to set the PSON bit in the System Control Register within 80ms typical (tNORMREQ), this is to ensure the MCU has started up and is operating correctly. If the PSON bit is not set within the required time frame the device is entering SLEEP mode to reduce power consumption (fail safe). This MCU monitoring can be disabled e.g. for programming by applying VDD on the TESTMODE terminal. Stop Mode In Stop mode the voltage regulator still supplies the MCU with VDD (limited current capability). To enter the Stop mode the STOP bit in the System Control Register has to be set and the MCU has to be stopped also (see 908EY16 datasheet for details). Wake-up from this mode is possible by LIN bus activity or the wake-up input L0 and is maskable with the LINIE and/or L0IE bits in the Interrupt Mask Register. The analog die is generating an interrupt on IRQ_A terminal to wake-up the MCU. The wake-up / interrupt source can be evaluated with the L0IF and LINIF bits in the Interrupt Flag Register. 908E621 24 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Stop mode has a higher current consumption than Sleep mode, but allows a quicker wake-up. Additionally the wakeup sources can be selected (maskable) which is not possible in Sleep mode. Figure 12 show the procedure to enter the Stop mode and how the system is waking up. MCU Power Die behaves like a power on reset. The wake-up / reset source can be evaluated by the L0WF and/or LINWF bits in the Reset Status Register. Sleep mode has a lower current consumption than Stop mode, but requires a longer time to wake-up. The wake-up sources can not be selected (not maskable). Figure 13 show the procedure to enter the Sleep mode and how a wake-up is performed. MCU From Reset Power Die From Reset initialize operate initialize Enable/disable LIN/L0 wakeup SPI: STOP =1 Switch to VREG low current mode MCU STOP Wake Up on LIN or L0 ? operate SPI: SLEEP =1 Switch off VREG Vdd low, RST low Assert IRQ Wake Up on LIN or L0 ? IRQ interrupt ? Switch to VREG high current mode SPI: reason for interrupt Figure 12. STOP mode Wake-up Procedure Sleep Mode In Sleep mode the voltage regulator is turned off and the MCU is not supplied (VDD = 0 V) also the RST_A terminal is pulled low. To enter the Sleep mode the Sleep bit in the System Control Register has to be set. Wake-up from this mode is possible by LIN bus activity or the wake-up input L0 and is not maskable. The wake-up Store Wake Up Event Start VREG Vdd high, RST high Figure 13. SLEEP mode Wake-up Procedure Table 6 summarized the Operating modes. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 25 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Table 6. Operating Modes Overview Device Mode Voltage Regulator Wake-Up Capabilities Reset VDD ON N/A MCU monitoring/ Watchdog Function Power Stages LIN Interface LOW Disabled Disabled Disabled Disabled Disabled RST_A Output Normal Request VDD ON N/A HIGH tNORMREQ (80 ms typical) time out to set PSON bit in System Control Register Normal (Run) VDD ON N/A HIGH Window Watchdog active if enabled Enabled Enabled Stop VDD ON with limited current capability HIGH Disabled Disabled Recessive state with wake-up capability LOW Disabled Disabled Recessive state with wake-up capability Sleep LIN wake-up, L0 state change (SPI PSON=1) VDD OFF (1) LIN wake-up L0 state change Notes 1. The SPI is still active in Stop mode. However, due to the limited current capability of the voltage regulator in Stop mode, the PSON bit has to be set before the increased current caused from a running MCU causes an LVR. OPERATING MODES OF THE MCU For a detailed description of the operating modes of the MCU, refer to the MC68HC908EY16 datasheet. INTERRUPTS The 908E621 has seven different interrupt sources. An interrupt pulse on the IRQ_A terminal is generated to report an event or fault to the MCU. All interrupts are maskable and can be enabled/disabled via the SPI (Interrupt Mask Register). After reset all interrupts are automatically disabled. Low Voltage Interrupt High Temperature Interrupt The high temperature interrupt (HTI) is generated by the on chip temperature sensors. If the chip temperature is above the HTI threshold the HTIF bit in the Interrupt Flag Register will be set. In case the high temperature interrupt is enabled (HTIE = 1), an interrupt will be initiated. During Stop and Sleep mode the HTI circuitry is disabled. Low voltage interrupt (LVI) is related to external supply voltage VSUP. If this voltage falls below the LVI threshold, it will set the LVIF bit in the Interrupt Flag Register. In case the low voltage interrupt is enabled (LVIE = 1), an interrupt will be initiated. During Sleep and Stop mode the low voltage interrupt circuitry is disabled. The LIN Interrupt is related to the Stop mode. If the LIN interrupt is enabled (LINIE = 1) in Stop mode an interrupt is asserted, if a rising edge is detected and the bus was dominant longer than TpropWL. After the wake-up / interrupt the LINIF is indicating the reason for the wake-up / interrupt. High Voltage Interrupt Power Stage Fail Interrupt The High voltage Interrupt (HVI) is related to the external supply voltage VSUP. If this voltage rises above the HVI threshold it will set the HVIF bit in the Interrupt Flag Register. In case the High voltage Interrupt is enabled (HVIE = 1), an interrupt will be initiated. During Stop and Sleep mode the HVI circuitry is disabled. The power stage fail flag indicates an error condition on any of the power stages (see Figure 14, page 27). In case the power stage fail interrupt is enabled (PSFIE = 1), an interrupt will be initiated if: During Stop and Sleep mode the PSFI circuitry is disabled. LIN Interrupt HO Input Interrupt The H0 interrupt flag H0IF is set in run mode by a state change of the H0F flag (rising or falling edge on the enabled 908E621 26 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES input). The interrupt function is available if the input is selected as General Purpose or as 2pin Hallsensor input. The interrupt is maskable with the H0IE bit in the Interrupt Mask Register. During Stop and Sleep mode the H0I circuitry is disabled. LVIF - Low Voltage Flag Bit L0 input Interrupt The L0 interrupt flag L0IF is set in run mode by a state change of the L0F flag (rising or falling edge). The interrupt is maskable with the L0IE bit in the interrupt mask register. INTERRUPT FLAG REGISTER (IFR) Register Name and Address: IFR - $0A Bit7 6 5 4 3 2 1 Read Bit0 PSFIF L0IF H0IF LINIF 0 HTIF LVIF HVIF 0 0 0 0 0 0 0 Write Reset interrupt cannot be lost due to inadvertent clearing of HTIF. Reset clears the HTIF bit. Writing a logic [0] to HTIF has no effect. 1 = high temperature condition has occurred 0 = high temperature condition has not occurred 0 L0IF - L0 Input Flag Bit This read/write flag is set on a falling or rising edge at the L0 input. Clear L0IF by writing a logic [1] to L0IF. Reset clears the L0IF bit. Writing a logic [0] to L0IF has no effect. 1 = rising or falling edge on L0 input detected 0 = no state change on L0 input detected H0IF - H0 Input Flag Bit This read/write flag is set on a falling or rising edge at the H0 input. Clear H0IF by writing a logic [1] to H0IF. Reset clears the H0IF bit. Writing a logic [0] to H0IF has no effect. 1 = state change on the hallflags detected 0 = no state change on the hallflags detected This read/write flag is set on low voltage condition. Clear LVIF by writing a logic [1] to LVIF. If low voltage condition is still present while writing a logical one to LVIF, the writing has no effect. Therefore, a low voltage interrupt cannot be lost due to inadvertent clearing of LVIF. Reset clears the LVIF bit. Writing a logic [0] to LVIF has no effect. 1 = low voltage condition has occurred 0 = low voltage condition has not occurred HVIF - High Voltage Flag Bit This read/write flag is set on high voltage condition. Clear HVIF by writing a logic [1] to HVIF. If high voltage condition is still present while writing a logical one to HVIF, the writing has no effect. Therefore, a high voltage interrupt cannot be lost due to inadvertent clearing of HVIF. Reset clears the HVIF bit. Writing a logic [0] to HVIF has no effect. 1 = high voltage condition has occurred 0 = high voltage condition has not occurred PSFIF - Power Stage Fail Bit This read-only flag is set on a fail condition on one of the power outputs (HBx, HSx, HVDD, H0). Reset clears the PSFIF bit. Clear this flag, by writing a logic [1] to the appropriate fail flag. 1 = power stage fail condition has occurred 0 = power stage fail condition has not occurred H0OCF H0OCF HVDDOCF LINIF - LIN Flag Bit HVDDOCF This read/write flag is set if a rising edge is detected and the bus was dominant longer than TpropWL. Clear LINIF by writing a logic [1] to LINIF. Reset clears the LINIF bit. Writing a logic [0] to LINIF has no effect. 1 = LIN bus interrupt has occurred 0 = not LIN bus interrupt occurred since last clear HB1OC HB2OC HBFF PSFIF HB3OC HB4OC HS1OC HSFF HTIF - High Temperature Flag Bit This read/write flag is set on high temperature condition. Clear HTIF by writing a logic [1] to HTIF. If high temperature condition is still present while writing a logical one to HTIF, the writing has no effect. Therefore, a high temperature HS2OC HS3OC Figure 14. Principal Implementation of the PSFIF 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 27 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES INTERRUPT MASK REGISTER (IMR) 1 = high temperature reset is disabled 0 = high temperature reset is enabled Register Name and Address: IMR - $09 Bit7 6 5 4 3 2 1 Bit0 L0IE H0IE LINIE HTRD HTIE LVIE HVIE PSFIE Read Write Reset 0 0 0 0 0 0 0 0 Note: Disabling of the high temperature reset can lead to a destruction of the part in cases of high temperature. This bit was foreseen for test purposes only! HTIE - High Temperature Interrupt Enable Bit This read/write bit enables CPU interrupts by the high temperature flag, HTIF. Reset clears the HTIE bit. 1 = interrupt requests from HTIF flag enabled 0 = interrupt requests from HTIF flag disabled L0IE - L0 Input Interrupt Enable Bit This read/write bit enables CPU interrupts by the L0 flag, L0IF. Reset clears the L0IE bit. 1 = interrupt requests from L0IF flag enabled 0 = interrupt requests from L0IF flag disabled LVIE - Low Voltage Interrupt Enable Bit This read/write bit enables CPU interrupts by the low voltage flag, LVIF.Reset clears the LVIE bit. 1 = interrupt requests from LVIF flag enabled 0 = interrupt requests from LVIF flag disabled H0IE - H0 Input Interrupt Enable Bit This read/write bit enables CPU interrupts by the Hallport flag, H0IF. Reset clears the H0IE bit. 1 = interrupt requests from H0IF flag enabled 0 = interrupt requests from H0IF flag disabled HVIE - High Voltage Interrupt Enable Bit This read/write bit enables CPU interrupts by the high voltage flag, HVIF.Reset clears the HVIE bit. 1 = interrupt requests from HVIF flag enabled 0 = interrupt requests from HVIF flag disabled LINIE - LIN line Interrupt Enable Bit This read/write bit enables CPU interrupts by the LIN flag, LINIF. Reset clears the LINIE bit. 1 = interrupt requests from LINIF flag enabled 0 = interrupt requests from LINIF flag disabled PSFIE - Power Stage Fail Interrupt Enable Bit This read/write bit enables CPU interrupts by power stage fail flag, PSFIF. Reset clears the PSFIE bit. 1 = interrupt requests from PSFIF flag enabled 0 = interrupt requests from PSFIF flag disabled HTRD - High Temperature Reset Disable Bit This read/write bit disables the high temperature reset function. Reset clears the HTRD bit. 908E621 28 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES RESETS The 908E621 has four internal and one external reset source. Each internal reset event will cause a reset pin low for tRST (1.25 ms typical), after the reset event is gone. SPI REGISTERS WDRE WD Reset Sensor Reset SPI Register (not RSR) VDD HTRD HTR Reset Sensor Clear RSR and set POR Bit RST_A RSR POR internal VREG LVR Main VREG MONO FLOP Pulse Duration after reset event is removed Figure 15. Internal Reset Routing RESET SOURCE Register. A LVR event will reset all register in the SPI excluding the RSR. High Temperature Reset The device is protected against high temperature. When the chip temperature exceeds a certain temperature, a reset (HTR) is generated. The reset is flagged by bit HTR in the Interrupt Flag Register. A HTR event will reset all registers in the SPI excluding the RSR. The HTR can be disabled by bit HTRD in the Interrupt Mask register. Power On Reset The POR is related to the internal 5V supply. In case the device detects a power on the POR bit in the Reset Status Register (RSR) is set. A power on reset will reset all register in the SPI including the RSR and set the POR bit. The Power On Reset circuitry will force the RST_A terminal low for tRST after the VDD has reached its nominal value (above LVR Threshold). Also see Figure 10, page 20). Note: Disabling the high temperature reset can lead to destruction of the part in cases of high temperature. This bit was foreseen for test purposes only! Reset terminal / external Reset Watchdog Reset An external reset can be applied by pulling down the RST_A terminal. The reset event is flagged by bit PINR in the reset status register. The WatchDog module generates a reset, because of a watchdog time-out or wrong watchdog timer reset. Reset is flagged by bit WDR in the Reset Status Register. A Watchdog reset event will reset all registers in the SPI excluding the RSR. Main VREG Low Voltage Reset The LVR is related to the Main VDD. In case the voltage falls below a certain threshold, it will pull down the RST_A terminal. Reset is flagged by bit LVR in the Reset Status Reset Status Register This register contains five flags that shows the source of the last reset. A power-on reset sets the POR bit and clears all other bits in the Reset Status Register. All bits can be cleared by writing a one to the corresponding bit. Uncleared bits remain set as long as they are not cleared by a power-on reset or by software. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 29 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES In addition the register includes two flags which will indicate the source of a wake-up from Sleep mode: Either LIN bus activity or an event on the L0 wake-up input terminal. 1 = reset source is watchdog 0 = no watchdog reset HTR— High Temperature Reset bit Register Name and Address: RSR - $0D Bit7 6 5 4 3 POR PINR WDR HTR LVR 1 0 0 0 0 Read 2 1 Bit0 This read/write bit is set if the chip temperature exceeds a certain value. Bit is cleared by writing a logic “1” to this location. 1 = reset due to high temperature condition 0 = no high temperature reset 0 LINWF LOWF LVR— Low Voltage Reset bit Write POR 0 0 0 POR— Power On Reset bit This read/write bit is set after power on. Bit is cleared by writing a logic “1” to this location. 1 = Reset due to power on 0 = no power on reset PINR— Reset forced from external Reset terminal bit This read/write bit is set after an reset was forced on the external reset RST_A terminal. Bit is cleared by writing an logic “1” to this location. 1 = reset source is external reset terminal 0 = no external reset WDR— Watch Dog Reset bit This read/write bit is set if the external VDD voltage coming from the main voltage regulator falls below a certain value. Bit is cleared by writing a logic “1” to this location. 1 = reset due to low voltage condition 0 = no low voltage reset LINWF— LIN Wake-Up Flag This read/write bit is set if a bus activity was the case of an wake-up. Bit is cleared by writing a logic “1” to this location. 1 = Wake-up due to bus activity 0 = no wake-up due to bus activity L0WF— L0 Wake-Up Flag This read/write bit is set if a event on the L0 terminal caused an wake-up. Bit is cleared by writing a logic “1” to this location. 1 = Wake-Up due to L0 terminal 0 = no Wake-Up due to L0 terminal This read/write flag is set due to watchdog time-out or wrong watchdog timer reset. Clear WDR by writing a logic “1” to WDR. ANALOG DIE INPUTS/OUTPUTS LIN PHYSICAL LAYER The LIN bus terminal provides a physical layer for singlewire communication in automotive applications. The LIN physical layer is designed to meet the LIN physical layer specification. The LIN driver is a low-side MOSFET with internal current limitation and thermal shutdown. An internal pullup resistor with a serial diode structure is integrated, so no external pullup components are required for the application in a slave node. The fall time from dominant to recessive and the rise time from recessive to dominant is controlled. The symmetry between both slew rate controls is guaranteed. The slew rate can be selected for optimized operation at 10 and 20kBit/s as well as high baud rates for test and programming. The slew rate can be adapted with 2 bits SRS[1:0] in the System Control Register. The initial slew rate is optimized for 20kBit/s. The LIN terminal offers high susceptibility immunity level from external disturbance, guaranteeing communication during external disturbance. The LIN transmitter circuitry is enabled by setting the PSON bit in the System Control Register (SYSCTL). If the transmitter works in the current limitation region, the LINCL bit in the System Status Register (SYSSTAT) is set and the LIN transceiver is disabled after a certain time. 908E621 30 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES the LIN bus at recessive level. In case of a LIN bus short to GND, this feature will reduce the current consumption in STOP and SLEEP modes. For improved performance and safe behavior in case of LIN bus short to Ground or LIN bus leakage during low power mode the internal pull-up resistor on the LIN terminal is disconnected from VSUP and a small current source keeps MODE PSON SRS[1:0] VSUP WakeUp LINIF Control 10µA LINCL 30k LIN bus TXD Slope Control WakeUp Filter GND Receiver TESTMODE RXD Figure 16. LIN Interface TXD Terminal The TXD terminal is the MCU interface to control the state of the LIN transmitter (see Figure 2, page 2). When TXD is LOW, the LIN terminal is low (dominant state). When TXD is HIGH, the LIN output MOSFET is turned off (recessive state). The TXD terminal has an internal pull-up current source in order to set the LIN bus to recessive state in the event, for instance, the microcontroller could not control it during system power-up or power-down. RXD Terminal The RXD transceiver terminal is the MCU interface, which reports the state of the LIN bus voltage. LIN HIGH (recessive state) is reported by a high level on RXD, LIN LOW (dominant state) by a low level on RXD. STOP Mode and Wake-up Feature the LIN terminal in recessive state. The receiver is still active and able to detect wake-up events on the LIN bus line. If the LIN interrupt is enabled (LINIE bit in the Interrupt Mask register is set), a dominant level longer than TpropWL followed by an rising edge will set the LINIF flag and generate an interrupt which causes a system wake-up (see Figure 8, page 19) SLEEP Mode and Wake-up Feature During SLEEP mode operation the transmitter of the physical layer is disabled and the internal pull-up resistor is disconnected from VSUP and a small current source keeps the LIN terminal in recessive state. The receiver is still active to be able to detect wake-up events on the LIN bus line. A dominant level longer than TpropWL followed by an rising edge will generate a system wake-up (reset) and set the LINWF flag in the Reset Status register (RSR). Also see Figure 9, page 19). During STOP mode operation the transmitter of the physical layer is disabled and the internal pull-up resistor is disconnected from VSUP and a small current source keeps 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 31 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES A0 INPUT AND ANALOG MULTIPLEXER A0 is internally connected to the analog multiplexer. This terminal offers a switchable current source. To read the Analog Input the terminal has to be selected with the SS[3:0] bits in the A0MUCTL register. A0 - Analog Input Input A0 is an analog input used for reading switches or as analog inputs for potentiometers, NTC, etc. Source Selection Bits VDD SSx 4 Selectable Current Source CSSEL PSON ADOUT CSON Analog Multiplexer A0 SS[0:3] Analog Port A0/A0CST A0CST 1% Figure 17. Analog Input and Multiplexer A0 Current Source The terminal A0 provides a switchable current source, to be able to read in switches, NTC, etc. without the need of an additional supply line for the sensor. The overall enable of this feature is done by setting the PSON bit in the System Control register. In addition the terminal has to be selected with the SS[3:0] bits. The current source can be enabled with Bit CSON and adjusted with the bits CSSEL[1:0]. The current source is derived from the Vdd voltage and is constant up to an output voltage of ~4.75V. IA0(UA0) 100% With the CSSEL[1:0] bit’s four different current values can be selected (40, 120, 320 and 800µA). This function is ceased during STOP and SLEEP mode operation. 4.75 5 UA0[V] To calibrate the current sources an extra terminal (A0CST) is foreseen. On this terminal an accurate resistor can to be connected. Switching the current sources to this resistor allows the user to measure the current and use the measured value for calculating the current on A0. Analog Multiplexer / ADOUT terminal The ADOUT terminal is the analog output interface to the Analog-to-digital converter of the MCU. To be able to have different sources for the MCU with one single signal an 908E621 32 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Table 7. A0 Current Source Level Selection Bits analog multiplexer is integrated in the analog die. This multiplexer has eleven different sources, which can be selected with the SS[3:0] bits in the A0MUCTL register. CSSEL1 CSSEL0 0 0 40µA 0 1 120µA Half-bridge (HB1:HB4) Current Recopy 1 0 320µA The multiplexer is connected to the four current sense circuits on the low side FET of the half bridges. This sense circuits offers a voltage proportional to the current through the MOSFET. The resolution is depending on bit CSA in the A0 and Multiplexer control register (A0MUCTL). 1 1 800µA High-side (HS1:HS3) Current Recopy The multiplexer is connected to the three high-side switches. This sense circuits offers a voltage proportional to the current through the transistor. Analog Input A0 and A0CST A0 and A0CST are directly connected to the analog multiplexer. It offers the possibility to read analog values from the periphery. Temperature Sensor Current Source Enable (typ.) CSA — H-Bridges Current Sense Amplification Select Bit This read/write bit selects the current sense amplification of the H-Bridges HB1:HB4 current recopy. Reset clears the CSA bit. 1 = low current sense amplification 0 = high current sense amplification SS[3:0] — Analog Source Input Select Bits These read/write bits selects the analog input source for the ADOUT terminal. Reset clears the SS[3:0] bits Table 8. Analog Multiplexer Configuration Bits. SS3 SS2 SS1 SS0 Channel 0 0 0 0 current recopy HB1 0 0 0 1 current recopy HB2 VSUP prescaler 0 0 1 0 current recopy HB3 The VSUP prescaler offers a possibility to measure the external supply voltage. The output of this voltage is VSUP / RATIOVSUP. 0 0 1 1 current recopy HB4 0 1 0 0 current recopy HS1 0 1 0 1 current recopy HS2 0 1 1 0 current recopy HS3 0 1 1 1 not used 1 0 0 0 Chip temperature 1 0 0 1 VSUP prescaler 1 0 1 0 Terminal A0 1 0 1 1 Terminal A0CST 1 1 0 0 not used CSON — Current Source on/off 1 1 0 1 not used This read/write bit enables the current source for the A0 or A0CST inputs Reset clears CSON bit. 1 = Current Source enabled 0 = Current Source disabled 1 1 1 0 not used 1 1 1 1 not used The analog die includes an on chip temperature sensor. This sensor offers a voltage which is proportional to the actual mean chip junction temperature. A0 and Multiplexer Control Register (A0MUCTL) Register Name and Address: A0MUCTL - $08 Bit7 Read 5 4 3 2 1 Bit0 CSON CSSEL 1 CSSEL 0 CSA SS3 SS2 SS1 SS0 0 0 0 0 0 0 0 0 Write Reset 6 CSSEL[1:0] — Current Source Select Bits These read/write bits select the current source values for A0 or A0CST input. Reset clears CSSEL[1:0] bits. Hall-Effect Sensor Input Terminal H0 The H0 terminal can be configured as general purpose input (H0MS = 0) or as hall-effect sensor input (H0MS = 1) to be able to read 3pin / 2pin hall sensors or switches. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 33 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES VDD 10k H0PD VSUP H0MS H0MS H0 H0EN H0F H0EN Current Sense Figure 18. General purpose / hall-effect sensor input (H0) Current Coded Hallsensor Input After switching on the hallport (H0EN = “1”) the hallsensor needs some time to stabilize the output. In RUN mode the software has to take care about waiting for a few µs (40) before sensing the hallflags. H0 is selected as “2 pin hallsensor input”, if the corresponding H0MS bit in the H0/L0 Status and Control Register (HLSCTL) is set. In this mode the terminal current to GND is monitored by a special sense circuitry. Setting bit H0EN in the H0/L0 Status and Control Register switches the output to VSUP and enable the sense circuitry. The result of the sense operation is given by the H0F flag. The flag is low if the sensed current is higher than the sense current threshold IHSCT. In this configuration the HO terminal is protected (current limitation) against short circuit to GND. The hallport output current is sensed. In case of an overcurrent (short to GND) the hallport overcurrent flag (H0OCF) is set and the current is limited. For proper operation of the current limitation an external capacitor (>100nF) close to the H0 terminal is required. VSUP 2 pin hall sensor H0EN Current Sense H0 >0.1uF H0F GND V 908E621 34 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Figure 19. H0 used as 2-pin hallsensor input General Purpose Input H0 is selected as general purpose input, if the H0MS bit in the H0/L0 Status and Control Register (HLSCTL) is cleared. In this mode the input is usable as standard 5V input. The H0 VDD input has a selectable internal pull-up resistors. The pull-up can be switched off with the H0PD bit in the H0/L0 Status and Control Register (HLSCTL). After reset the internal pull-up is enabled. VDD 3 pin hall sensor HVDD Vs 10k HVDDON H0PD H0F H0 OUT GND GND Figure 20. H0 used as 3 pin hall-effect sensor input VDD 10k H0PD H0F H0 GND Figure 21. H0 used to read in standard switches H0 Interrupt The interrupt functionality on this terminal is just available in RUN mode. H0 interrupt flag H0IF is set in run mode by a state change of the H0 flag (rising or falling edge on the enabled input). The interrupt function is available if the input is selected as General Purpose or as 2pin Hallsensor input. The interrupt can be masked with the H0IE bit in the interrupt mask register. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 35 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Wake-up input L0 H0F — H0 Flag Bit The device provides one wake-up capable input for reading VSUP or VDD related signals. RUN mode The actual input state is reflected in bit L0F of the H0/L0 Status and Control register (HLSCTL). The L0 terminal offers an interrupt capability on rising and falling edge. The interrupt can be enabled with the L0IE bit in the Interrupt Mask register. This read only flag reflects the state of the H0 input 1 = Hallport sensed high / current below threshold detected 0 = Hallport sensed low / current above threshold detected H0EN — H0 Input 2pin Hall-effect sensor Enable Bit STOP/SLEEP mode This read/write bit enables the 2pin hall-effect sensor sense circuitry. Reset clears H0EN bit. 1 = Hallport H0 is switched on and sensed 0 = Hallport H0 disabled During STOP and SLEEP mode the terminal can be used to wake-up the device. H0PD — Hallport Pull-up Disable Bit Before entering the STOP or SLEEP mode the actual state of the input is stored. If the state is changing during in the STOP or SLEEP mode a wake-up is initiated. This read/write bit disables the H0 Pull-up resistor. Reset clears H0PD bit. 1 = Hallport Pull-up resistor on H0 disabled 0 = Hallport Pull-up resistor on H0 enabled H0 / L0 Status and Control Register (HLSCTL) H0MS — H0 Mode Select Register Name and Address: HLSCTL - $07 Read Bit7 6 5 L0F 0 0 4 3 2 1 Bit0 H0EN H0PD H0MS 0 0 0 H0F H0OCF Write Reset These read/write bits select the mode of the H0 input Reset clears H0MS bit. 1 = H0 is 2-pin hallsensor input 0 = H0 is general purpose input Half-Bridge Outputs 0 0 0 0 0 L0F — L0 Flag Bit This read only flag reflects the state of the L0 input 1 = L0 input high 0 = L0 input low H0OCF — H0 Overcurrent Flag Bit This read/write flag is set at overcurrent condition on H0 during 2pin hallsensor mode. Clear H0OCF by writing a logic [1] to H0OCF. Reset clears the H0OCF bit. 1 = overcurrent condition on H0 terminal has occurred 0 = no overcurrent condition on H0 terminal has occurred Outputs HB1:HB4 provide four low-resistive half-bridge output stages. The half-bridges can be used in H-Bridge, high-side or low-side configurations. Reset clears all bits in the H-Bridge Output Register (HBOUT) owing to the fact that all half-bridge outputs are switched off. HB1:HB4 output features •Short circuit (overcurrent) protection on high-side and low-side MOSFETs •Current recopy feature (low-side MOSFET) •Overtemperature protection •Overvoltage and undervoltage protection •Active clamp on low-side MOSFET 908E621 36 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES VSUP On/Off High-Side Driver Status Charge Pump Overtemperature Protection Overcurrent Protection PWM Control HBx On/Off Status PWM Low-Side Driver Current Recopy Current Limitation Active Clamp Overcurrent Protection GND Figure 22. Half-Bridge Push-Pull Output Driver 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 37 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Half-Bridge Control Each output MOSFET can be controlled individually. The general enable of the circuitry is done by setting PSON in the System Control Register (SYSCTL). The HBx_L and HBx_H bits form one half bridge. It is not possible to switch on both MOSFETs in one half-bridge at the same time. If both bits are set, the high-side MOSFET is in PWM mode. To avoid both MOSFETs (high-side and low-side) of one half-bridge being on at the same time, a break-before-make circuit exists. Switching the high-side MOSFET on is inhibited as long as the potential between gate and VSS is not below a certain threshold. Switching the low-side MOSFET on is blocked as long as the potential between gate and source of the high-side MOSFET did not fall below a certain threshold. If the incoming signal is low, the high-side MOSFET is switched off. With the current recirculation mode control bit CRM in the Half-Bridge Status and Control Register (HBSCTL) the recirculation behavior in PWM mode can be controlled. If CRM is set the corresponding low-side MOSFET is switched on if the PWM controlled high-side MOSFET is off. Half-Bridge Current Recopy Each low-side MOSFET has an additional sense output to allow a current recopy feature. These sense sources are internally amplified and switched to the Analog Multiplexer. The factor for the Current Sense amplification can be selected via bit CSA in the A0MUCTL register (see page 32) CSA = “1”: low resolution selected HALF-BRIDGE OUTPUT REGISTER (HBOUT) CSA = “0”: high resolution selected Register Name and Address: HBOUT - $01 Half-Bridge Overtemperature Protection Bit7 6 5 4 3 2 1 Bit0 HB4_H HB4_L HB3_H HB3_L HB2_H HB2_L HB1_H HB1_L Read Write Reset 0 0 0 0 0 0 0 0 HBx_H, HBx_L — Half Bridge Output Switches These read/write bits select the output of each half-bridge output according to the following table. Reset clears all HBx_H, HBx_L bits. Table 9. Half-Bridge Configuration HBx_H HBx_L Mode 0 0 Low-side and high-side MOSFET off 0 1 High-side MOSFET off, low-side MOSFET on 1 0 High-side MOSFET on, low-side MOSFET off 1 1 High-side MOSFET in PWM mode Half-Bridge PWM mode The PWM mode is selected by setting both HBxL and HBxH of one Half-bridge to “1”. In this mode the high-side MOSFET is controlled by the incoming PWM signal on the PWM terminal (see Figure 2, page 2). If the incoming signal is high, the high-side MOSFET is switched on. The outputs are protected against overtemperature conditions. Each power output comprises two different temperature thresholds. The first threshold is the high temperature interrupt (HTI). If the temperature reaches this threshold the HTIF bit in the Interrupt Flag Register (IFR) is set and an interrupt will be initiated if HTIE bit in the Interrupt Mask register is set. In addition this interrupt can be used to automatically turn off the power stages. This shutdown can be enabled/disabled by Bits HTIS0-1 in the System Control Register (SYSCTL). The high temperature interrupts flag (HTIF) is cleared (and the outputs reenabled) by writing a “1” to the HTIF flag in the Interrupt Flag Register (IFR) or by a reset. Clearing this flag has no effect as long as a high temperature condition is present. If the HTI shutdown is disabled, a second threshold high temperature reset (HTR) will be used to turn off all power stages (HB (all Fet’s), HS, HVDD, H0) in order to protect the device. Half-Bridge Overcurrent Protection The Half-Bridges are protected against short to GND, VSUP and load shorts. The overcurrent protection is implemented on each HB. If a overcurrent condition on the high-side MOSFET occurs the high-side MOSFET is automatically switched off. An overcurrent condition on the low-side MOSFET will automatically turn off the low-side MOSFET. In both cases the corresponding HBxOCF flag in the Half-Bridge Status and Control Register (HBSCTL) is set. The overcurrent status flag is cleared (and the corresponding Half-Bridge MOSFETs reenabled) by writing a “1” to the HBxOCF in the Half-Bridge Status and Control Register (HBSCTL) or by a reset. 908E621 38 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES 1 = recirculation via switched on low-side MOSFET 0 = recirculation via low-side free wheeling diode Half-Bridge Overvoltage/Undervoltage Protection The half-bridge outputs are protected against undervoltage and overvoltage conditions. This protection is done by the low and high voltage interrupt circuitry. If one of this flags (LVIF, HVIF) is set, the outputs are automatically disabled if the VIS bit in the System Control Register (SYSCTL) is cleared. The overvoltage and undervoltage status flags are cleared (and the outputs reenabled) by writing a “1” to the LVIF / HVIF flags in the Interrupt Flag Register (IFR) or by a reset. Clearing this flag has no effect as long as the high voltage or low voltage condition is still present. Half-Bridge Status and Control Register (HBSCTL) Read 6 5 4 3 2 1 Bit0 0 0 0 HB4 OCF HB3 OCF HB2 OCF HB1 OCF 0 0 0 0 0 0 0 CRM This read/write bit indicates that an overcurrent condition on either the LS or the HS FET on HBx has occurred. Clear HBxOCF and enable Half Bridge by writing a logic [1] to HBxOCF. Writing a logic [0] to HBxOCF has no effect. Reset clears the HBxOCF bit. 1 = overcurrent condition on HBx occurred 0 = no overcurrent condition on HBx High-Side Drivers Register Name and Address: HBSCTL - $03 Bit7 HBxOCF — Half Bridges Overcurrent Flag Bit The high-side outputs are low resistive high-side switches, targeted for driving lamps. The high-sides are protected against overtemperature, overcurrent and overvoltage/ undervoltage. Write Reset 0 CRM — Current Recirculation Mode bit This read/write bit selects the recirculation mode during PWM. Reset clears the CRM bit. VSUP PSON on/off HSxON HSxPWM Control PWM Status Current Limit HS - Driver charge pump over-current protection inrush current limiter PWM HSx Figure 23. HS circuitry The High-sides outputs are enabled if the PSON bit in the System Control Register (SYSCTL) is set. PWM control of the output is enabled, if the HSxPWM bit High-Side Output Register (HSOUT) is set. In this operating mode the high-side MOSFET is on, if the input PWM signal (PWM terminal) is high. Each high-side output is permanently switched on, if the HSxON bit in the High-Side Output Register (HSOUT) is set. The below table shows the behavior of the high-side MOSFETs depending on the HSONx and PWMHSx bits. HIGH-SIDE OPERATING MODES 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 39 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES Table 10. High-Side Configuration Bits HSxPWM HSxON 0 0 High-side MOSFET off 0 1 High-side MOSFET on, in case of overcurrent the overcurrent flag (HSxOCF) is set and the High-side MOSFET is turned off 1 0 Mode In this mode the PWM duty cycle is either controlled by the PWM input signal or in case the overcurrent shutdown value is reached by the part itself. Without reaching the overcurrent shutdown, the high-side driver is directly driven from the PWM input signal. If the Input signal is high the output is on, if low the output is off (PWM control). If the current reaches the overcurrent shutdown value, the high-side will be automatically turned off, with the next rising edge of the PWM input signal the output will turn on again (current limitation). The HSxOCF bit will be set, software has to distinguish between an inrush current and a real short on the output. 1 1 High-side MOSFET is switched on and the inrush current limitation is enabled, means the high side will start automatically with an current limitation around the overcurrent shutdown threshold. (PWM signal must be applied, see Figure 24) If the high-side enters current limitation the HSxOCF bit is set, but the output is not disabled. The software needs to take care about distinguish between an inrush current and a real short on the output. High-Side Overvoltage / Undervoltage Protection The outputs are protected against under- / overvoltage conditions. This protection is done by the low and high voltage interrupt circuitry. If an over- under voltage condition is detected (LVIF / HVIF) and Bit VIS in the High-Side Status Register is cleared, the output is disabled. The over- / undervoltage status flags are cleared (and the output reenabled) by writing a logic [1] to the LVIF / HVIF flags in the Interrupt Flag Register or by reset. Clearing this flag has no effect as long as a high or low voltage condition is present. HIGH-SIDE OVERTEMPERATURE PROTECTION The outputs are protected against over temperature conditions. Each power output comprises two different temperature thresholds. The first threshold is the high temperature interrupt (HTI), if the temperature reach this threshold the HTI bit in the interrupt flag register is set and an interrupt will be generated if HTIE bit in the interrupt mask register is set. In addition this interrupt can be used to automatically turn off the power stages (all high-sides, on Half bridges just the high-side FET’s). This shutdown can be enabled/disabled by Bit HTIS0. The high temperature interrupts flag (HTIE) is cleared (and the outputs reenabled) by writing a logic [1] to the HTIF flag in the Interrupt Status Register or by reset. Clearing this flag has no effect as long as a high temperature condition is present. If the HTIS shutdown is disabled, a second threshold (HTR) will be used to turn off all power stages (HB (all Fet’s), HS, HVDD, H0) in order to protect the device. High-Side Overcurrent Protection The HS outputs are protected against overcurrent. When the overcurrent limit is reached, the output will be automatically switched off and the overcurrent flag is set. Due to the high inrush current of bulbs a special feature was implemented to avoid a overcurrent shutdown during this inrush current. If a PWM frequency will be supplied to the PWM input during the switch on of a bulb, the inrush current will be limited to the overcurrent shutdown limit. This means, if the current reaches the overcurrent shutdown, the highside will be switched off, but each rising edge on the PWM input will enable the driver again. The duty cycle supplied by the MCU has no influence on the switch-on time of the highside driver. In order to distinguish between a shutdown due to an inrush current or a real shutdown, the software has to check if the overcurrent status flag (HSxOCF) in the High-Side Status register is set beyond a certain period of time. 908E621 40 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES HS Current HS Over-Current Shutdown Threshold t PWM Terminal t Figure 24. Inrush Current Limitation on HS Outputs High-Side Current Recopy High-Side Out Register (HSOUT) Each High-Side has an additional sense output to allow a current recopy feature. This sense source is internally connected to a shunt resistor. The drop voltage is amplified and switched to the Analog Multiplexer. Switchable HVDD Outputs The HVDD terminal is a switchable 5V output terminal. It can be used for driving external circuitry which requires a 5V voltage. The output is enabled with bit PSON in the System Control register and can be switched on / off with bit HVDD_ON in the High-Side Out register. Low or high voltage conditions (LVIF / HVIF) will have no influence on this circuitry. Register Name and Address: HSOUT - $02 Bit7 Read Write Reset HVDD ON 0 6 0 0 5 4 3 2 1 Bit0 HS3P WM HS2P WM HS1P WM HS3O N HS2O N HS1O N 0 0 0 0 0 0 HVDD-ON — HVDD On Bit HVDD Over Temperature Protection This read/write bit enables the HVDD output. Reset clears HVDDON bit. 1 = HVDD enabled 0 = HVDD disabled The output is protected against over temperature conditions. HSxON — High-Side on/off Bits HVDD Over Current Protection The HVDD output is protected against overcurrent. In case the current reach the overcurrent limit, the output current will be limited and the HVDDOCF overcurrent flag in the System Status register is set. These read/write bits turn on the High-Side Fet’s permanently Reset clears the HSxON bits. 1 = High-Side x is turned on 0 = High-Side x is turned off 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 41 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES HSxPWM — High-Side PWM on/off Bits These read/write bits enable the PWM control of the HighSide Fet’s. Reset clears the HSxPWM bits. 1 = High-Side x is controlled by PWM input signal 0 = High-Side x is not controlled by PWM input signal Register Name and Address: HSSTAT - $04 Read Write HVDD OCF Reset 6 5 4 3 0 0 0 0 0 0 0 0 2 1 Bit0 HS3O CF HS2O CF HS1O CF 0 0 0 In order to safely Stop mode all other bits (Bit7-Bit2) have to be “0”. Otherwise the STOP command will not be executed. SLEEP — Change to SLEEP Mode Bit 0 HSxOCF — High-Side Overcurrent Flag Bit This read/write flag is set by an overcurrent condition at the high-side drivers x. Clear HSxOCF and enable the HS Driver by writing a logic [1] to HSxOCF. Writing a logic [0] to HSxOCF has no effect. Reset clears the HSxOCF bit. 1 = overcurrent condition on high-side drivers has occurred 0 = no overcurrent condition on high-side drivers has occurred HVDDOCF — HVDD Output Overcurrent Flag Bit This read/write flag is set by an overcurrent condition at HVDD terminal. Clear HVDDOCF and enable the output by writing a logic [1] to the HVDDOCF Flag. Writing a logic [0] to HVDDOCF has no effect. Reset clears the HVDDOCF bit. 1 = overcurrent condition on VDD output has occurred 0 = no overcurrent condition on VDD output has occurred System Control Register (SYSCTL) Register Name and Address: SYSCTL - $00 Bit7 Read 6 5 0 0 STOP SLEEP 0 0 PSON Write Reset STOP — Change to STOP Mode Bit This write bit instructs the chip to enter Stop mode (See Operational Modes on page 24). Reset or CPU interrupt requests clear the STOP bit. 1 = go to Stop mode 0 = not in stop mode High-Side Status Register (HSSTAT) Bit7 output). Reset clears the PSON bit. 1 = power stages enabled 0 = power stages disabled 0 4 3 2 1 Bit0 HTIS1 HTIS0 VIS SRS1 SRS0 0 0 0 0 0 PSON — Power Stages On Bit This write bit instructs the chip to enter Sleep mode (See Operational Modes on page 24). Reset or CPU interrupt requests clear the SLEEP bit. 1 = go to Sleep mode 0 = not in sleep mode In order to safely enter Sleep mode all other bits (Bit7-Bit2) have to be “0”. Otherwise the SLEEP command will not be executed. HTIS0-1 — High Temperature Interrupt Shutdown Bits This read/write bits selects the power stage behavior at High Temperature Interrupt (HTI). Reset clears the HTIS0-1 bits. The HTIS0 bit selects the behavior of the high-side HS1:3 and the high-side FET of the half-bridges HB1:4. 1 = automatic HTI shutdown of the high-side drivers disabled 0 = automatic HTI shutdown of the high-side drivers enabled The HTIS1 bit selects the behavior of the low-side drivers of the half-bridges HB1:4. 1 = automatic HTI shutdown of the low-side drivers disabled 0 = automatic HTI shutdown of the low-side drivers enabled The user has to take care to protect the device against thermal destruction! VIS — Over-/Undervoltage Interrupt Shutdown This read/write bit selects the power stage behavior at LVI/ HVI. Reset clears the VIS bit. 1 = automatic LVI/HVI shutdown disabled 0 = automatic LVI/HVI shutdown enabled This read/write bit enables the power stages (half bridges, high-sides, LIN transmitter, A0 Current Sources and HVDD 908E621 42 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES SRS0-1 — LIN Slew rate Select Bits H0F — H0 Failure Bit These read/write bits enable the user to select the appropriate LIN slew rate for different Baudrate configurations. Reset clears the SRS1:0 bits. This read only bit is a copy of the H0OCF bit in the H0/L0 Status and Control Register (HLSCTL) 1 = overcurrent detected on H0 0 = no overcurrent on H0 Table 11. LIN Slew Rate Selection Bits SRS1 SRS0 Slew rate 0 0 Initial Slew Rate (20kBaud) 0 1 High Speed II (8x) 1 0 Slow Slew Rate (10kBaud) 1 1 High Speed I (4x) HVDDF— HVDD Failure Bit This read only bit is a copy of the HVDDOCF bit in the High-Side Status register 1 = HVDD terminal fail 0 = HVDD normal operating HSF— HS1:3 Failure Bit The high speed slew rates are used, for example, for programming via the LIN and are not intended for use in the application. This read only bit is set if a fail condition on one of the highside outputs is present 1 = HS1:3 terminal fail 0 = HS1:3 normal operating System Status Register (SYSSTAT) HS1OCF HS2OCF HSF Register Name and Address: SYSSTAT - $0C Read Bit7 6 5 4 3 2 1 Bit0 LINC L HTIF VF H0F HVD DF HSF HBF 0 Figure 26. HSF flag generation HBF— HB1:4 Failure Bit Write Reset HS3OCF 0 0 0 0 0 0 0 0 LINCL — LIN Current Limitation Bit This read only bit is set if the LIN transmitter operates in current limitation region. Due to excessive power dissipation in the transmitter, the driver will be automatically turned off after a certain time. 1 = transmitter operating in current limitation region 0 = transmitter not operating in current limitation region HTIF— Overtemperature Status Bit VF — Voltage Failure Bit This read only bit indicates that the supply voltage was out of the allowed range. The bit is set if either the LVIF or the HVIF in the Interrupt Flag register is set. 1 = low/high voltage condition detected 0 = no voltage failure condition detected LVIF HB1OCF HB2OCF HB3OCF HBF HB4OCF Figure 27. HBF flag generation This read only bit is a copy of the HTIF bit in the Interrupt Flag register 1 = overtemperature condition 0 = no overtemperature condition HVIF This read only bit is set if a fail condition on one of the half bridge outputs is present. 1 = HB1:4 terminal overcurrent fail 0 = HB1:4 normal operating VF WINDOW WATCHDOG The window watchdog is to supervise the device and to recover from e.g. code runaways or similar conditions. The use of a window watchdog adds additional safety as the watchdog clear has not only to occur but to be done at a certain time frame / window. Normal mode The window watchdog function is just available in Normal mode and is ceased in Stop and Sleep mode. On setting the WDRE bit, the watchdog functionality is activated. Once this Figure 25. VF flag generation 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 43 FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES function is enabled it is not possible to disable it via software. Reset clears the WDRE bit. To prevent a Watchdog reset, the Watchdog timer has to be cleared in the Window Open frame. This is done by writing a logic “1” to the WDRST bit in the Watchdog Control register (WDCTL). The actual reset of the watchdog counter occurs at the end of the corresponding SPI transmission with the rising edge of the SS signal. If the watchdog is enabled, it will generate a system reset if the timer has reached its end value or if a watchdog reset (WDRST) has occurred in the closed window. The watchdog period can be selected with 2 bits in the WDCTL, in order to get 10ms, 20ms, 40ms and 80ms period. Window closed no watch dog clear allowed Window open for watch dog clear Watchdog Control Register (WDCTL) Register Name and Address: WDCTL - $0B Read Bit7 6 5 4 3 2 1 Bit0 WDRE WDP1 WDP0 0 0 0 0 0 Write WDRST Reset 0 0 0 0 0 0 0 0 WDRE - Watchdog Reset Enable Bit This read/write (write once) bit activates the watchdog The WDRE can only be set and can not be cleared by software. Reset clears the WDRE bit. 1 = Watchdog enabled 0 = Watchdog disabled WDP1:0 - Watchdog Period Select Bits This read/write bit select the clock rate of the Watchdog. Reset clears the WDP1:0 bits. WD timing x 50% WD timing x 50% WD period ( timing selected by Bits WDP1:0) Figure 28. Window Watchdog Period Stop mode Operations of the watchdog function is ceased in stop mode (counter/oscillator stopped). After wake-up the watchdog timer is automatically cleared in order to give the MCU the full time to reset the watchdog. Sleep mode Operations of the watchdog function is ceased is sleep mode. Due to the reason that the main voltage regulator asserts an LVR reset the Watchdog functionality is disabled and the WDRE bit is cleared as soon as sleep mode is entered. To reenable this function bit WDRE has to be set after wake-up. Table 12. Watchdog Period Selection Bits WDP1 WDP0 Mode 0 0 80ms window watchdog period 0 1 40ms window watchdog period 1 0 20ms window watchdog period 1 1 10ms window watchdog period WDRST - Watchdog Reset Bit This write only bit resets the Watchdog. Write a logic [1] to reset the watchdog timer. 1 = Reset WD and restart timer 0 = no effect Voltage Regulator The 908E621 contains a low power, low drop voltage regulator to provide internal power and external power for the MCU. The on-chip regulator consist of two elements, the main regulator and the low voltage reset circuit. The VDD regulator accepts an unregulated input supply and provides a regulated VDD supply to all digital sections of the device. The output of the regulator is also connected to the VDD terminal to provide the 5.0 V to the microcontroller. Run mode During RUN mode the main voltage regulator is on. It will provide a regulated supply to all digital sections. 908E621 44 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES STOP mode SLEEP mode During STOP mode, the Stop mode regulator will take care of suppling a regulated output voltage. The Stop mode regulator has a limited output current capability. In Sleep mode the main voltage regulator external VDD is turned off and the LVR circuitry will force the RST_A terminal low. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 45 FUNCTIONAL DEVICE OPERATION LOGIC COMMANDS AND REGISTERS LOGIC COMMANDS AND REGISTERS 908E621 SERIAL PHERIPHERAL INTERFACE (SPI) The Serial Peripheral Interface (SPI) creates the communication link between the MCU and the analog die. A complete data transfer via the SPI, consists of 2 bytes. The master sends address and data, the slave returns system status and the data of the selected address. The interface consists of four terminals •MOSI - Master Out Slave In (internal pull-down) •MISO - Master In Slave Out •SPSCK - Serial Clock (internal pull-down) •SS - Slave Select (internal pull-up) SS Read/Write, Address, Parity MOSI R/W A4 A3 A2 A1 A0 Data (Register write) P X D7 D6 D5 System Status Register MISO S7 S6 S5 S4 S3 D4 D3 D2 D1 D0 D2 D1 D0 Data (Register read) S2 S1 S0 D7 D6 D5 D4 D3 SPSCK Rising edge of SPSCK Change MISO/MOSI Output Falling edge of SPSCK Sample MISO/MOSI Input Slave latch register address Slave latch data Figure 29. SPI Protocol •During the inactive phase of SS, the new data transfer will be prepared. The falling edge on the SS line, indicates the start of a new data transfer (framing) and puts MISO in the low impedance mode. The first valid data are moved to MISO with the rising edge of SPSCK. •The MOSI, MISO will change data on a rising edge of SPSCK. •The MOSI, MISO will be sampled on a falling edge of SPSCK. •The data transfer is only valid, if exactly 16 sample clock edges are present in the active phase of SS. •After a write operation the transmitted data will be latched into the register, by the rising edge of SS. •Register read data is internally latched into the SPI, at the time when the parity bit is transferred •SS high will force MISO to high impedance R/W includes the information if it is a read or a write operation. •If R/W = 1 (read operation), second byte of master contains no valid information, slave just transmits back register data. •If R/W = 0 (write operation), master sends data to be written in the second byte, slave sends concurrently contents of selected register prior to write operation, write data is latched in the SmartMOS registers on rising edge of SS Parity P completes the total number of 1 bits of (R/W,A[4-0]) to an even number. e.g. (R/W,A[4-0]) = 100001 -> P0 = 0. The parity bit is only evaluated during a write operations and ignored for read operations. Master Address Byte Bit X A4 - A0 not used include the address of the desired register. 908E621 46 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION LOGIC COMMANDS AND REGISTERS Master Data Byte This byte includes data to be written or no valid data during a read operation. Slave Data Byte This byte includes the contents of selected register, during write operation in includes the register content prior to write operation. Slave Status Byte This byte includes always the contents of the system status register ($0C) independent if it is a write or read operation or which register was selected. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 47 FUNCTIONAL DEVICE OPERATION LOGIC COMMANDS AND REGISTERS SPI REGISTER OVERVIEW TABLE 13 SUMMARIZES THE SPI REGISTER ADDRESSES AND THE BIT NAMES OF EACH REGISTER. Table 13. SPI Register Overview Addr Register Name $00 System Control (SYSCTL) $01 Half-Bridge Output (HBOUT) $02 High-Side Output (HSOUT) $03 Half-Bridge Status and Control (HBSCTL) $04 High-Side Status and Control (HSSCTL) $05 Reserved $06 Reserved $07 H0/L0 Status and Control (HLSCTL) R/W Bit 7 R W 6 5 4 3 2 1 0 0 0 STOP SLEEP HTIS1 HTIS0 VIS SRS1 SRS0 HB4_L HB3_H HB3_L HB2_H HB2_L HB1_H HB1_L HS3PWM HS2PWM HS1PWM HS3ON HS2ON HS1ON 0 0 HB4OCF HB3OCF HB2OCF HB1OCF HS3OCF HS2OCF HS1OCF H0EN H0PD H0MS PSON R W HB4_H R W 0 HVDDON R W 0 CRM R W 0 0 0 0 HVDDOCF R reserved W R $08 A0 and Multiplexer Control (A0MUCTL) $09 Interrupt Mask (IMR) $0A Interrupt Flag (IFR) $0B Watchdog Control (WDCTL) R 0 0 H0F W R CSON CSSEL1 CSSEL0 CSA SS3 SS2 SS1 SS0 L0IE H0IE LINIE HTRD HTIE LVIE HVIE PSFIE L0IF H0IF LINIF 0 HTIF LVIF HVIF 0 0 0 0 WDRE WDP1 WDP0 W R W R W PSFIF R W R System Status (SYSSTAT) $0D Reset Status (RSR) $0E System Test (SYSTEST) W $0F System Trim 1 (SYSTRIM1) W $10 System Trim 2 (SYSTRIM2) System Trim 3 (SYSTRIM3) L0F H0OCF $0C $11 reserved W 0 WDRST LINCL HTIF VF H0F HVDDF POR PINR WDR HTR LVR HSF HBF 0 LINWF L0WF W R W 0 R reserved R R W R W HVDDT1 HVDDT0 reserved reserved itrim3 itrim2 itrim1 itrim0 0 0 0 0 0 0 0 0 CRHB5 CRHB4 CRHB3 CRHB2 CRHB1 CRHB0 0 0 0 0 0 0 CRHS5 CRHS4 CRHS3 CRHS2 CRHS1 CRHS0 CRHBHC1 CRHBHC0 0 0 CRHBHC3 CRHBHC2 908E621 48 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION LOGIC COMMANDS AND REGISTERS FACTORY TRIMMING AND CALIBRATION To enhance the ease-of-use of the 908E621, various parameters (e.g. ICG trim value) are stored in the flash memory of the device. The following flash memory locations are reserved for this purpose and might have a value different from the “empty” ($FF) state: Watchdog Period Range Value (AWD Trim) The window watchdog supervises device recover from e.g. code runaways. The application software has to clear the watchdog within the open window. Due to the high variation of the watchdog period - and therefore the reduced width of the watchdog window - a value is stored at address $FDCF. This value classifies the watchdog period into 3 ranges (Range 0, 1, 2). This allows the application software to select one out of three time intervals to clear the watchdog based on the stored value. The classification is done in a way that the application software can have up to ±19% variation of the of optimal clear interval, e.g. caused by ICG variation. •$FD80:$FDDF Trim and Calibration Values •$FFFE:$FFFF Reset Vector In the event the application uses these parameters, one has to take care not to erase or override these values. If these parameters are not used, these flash locations can be erased and otherwise used. Trim Values Below the usage of the trim values located in the flash memory is explained Effective Open Window Having a variation in the watchdog period in conjunction with a 50% open window results in effective open window, which can be calculated by: latest window open time: t_open = t_wd max / 2 earliest window closed time: t_closed = t_wd min Internal Clock Generator (ICG) Trim Value The internal clock generator (ICG) module is used to create a stable clock source for the microcontroller without using any external components. The untrimmed frequency of the low frequency base clock (IBASE), will vary as much as ±25 percent due to process, temperature, and voltage dependencies. To compensate this dependencies a ICG trim values is located at address $FDC2. After trimming the ICG is a range of typ. ±2% (±3% max.) at nominal conditions (filtered (100nF) and stabilized (4,7uF) VDD = 5V, TAmbient~25°C) and will vary over temperature and voltage (VDD) as indicated in the 68HC908EY16 datasheet. To trim the ICG this values has to be copied to the ICG Trim Register ICGTR at address $38 of the MCU. Important The value has to copied after every reset. Optimal Clear Interval The optimal clear interval - meaning the clear interval with the biggest possible variation to latest window open time and to the earliest window closed time can be calculated with the following formula: t_opt = t_open + (t_open+t_closed) / 2 See Table 14 to select the optimal clear interval for the watchdog based on the Window No. and chosen period. Table 14. Window Clear Interval Window Period Range Select bits $FDCF Watchdog Period t_wd WDP1:0 min. max. 00 68 92 01 34 46 0 Unit Effective Open Window t_open t_closed 46 68 23 34 ms Unit Optimal Clear Interval t_opt 17 23 11.5 17 14.25 11 8.5 11.5 5.75 8.5 7.125 00 92 124 62 92 77 01 46 62 31 46 23 31 15.5 23 19.25 11 11.5 15.5 7.75 11.5 9.625 00 52 68 34 52 43 01 26 34 17 26 ms ±19.3% ms ±19.5% ms ±20.9% 38.5 ms 10 2 ms 28.5 ms ms max. variation 57 10 1 Unit 21.5 ms 10 13 17 8.5 13 10.75 11 6.5 8.5 4.25 6.5 5.375 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 49 FUNCTIONAL DEVICE OPERATION LOGIC COMMANDS AND REGISTERS Analog Die System Trim Values For improved application performance and to ensure the outlined datasheet values the analog die needs to be trimmed. For this purpose 3 trim values are stored in the Flash memory at address $FDC4 - $FDC6. These values have to be copied into the analog die SPI registers: • copy $FDC4 into SYSTRIM1 register $0F • copy $FDC5 into SYSTRIM2 register $10 • copy $FDC6 into SYSTRIM3 register $11 Note: This values have to be copied to the respective SPI register after a reset to ensure proper trimming of the device. HVDDT1 HVDDT0 typical Delay 1 1 78us ITRIM3:0 - IRef Trim Bits These write only bits are for trimming of the internal current references IRef (also A0, A0CST). The provided trim values have to be copied into these bits after every reset. Reset clears the ITRIM3:0 bits. Table 16. IRef Trim Bits System Test Register (SYSTEST) itrim3 itrim2 itrim2 itrim0 Adjustment 0 0 0 0 0 0 0 0 1 2% 0 0 1 0 4% 0 0 1 1 8% 0 1 0 0 12% 0 1 0 1 -2% 0 1 1 0 -4% 0 1 1 1 -8% 1 0 0 0 -12% Register Name and Address: SYSTEST - $0E Bit7 6 5 4 3 2 1 Bit0 reserved reserved reserved reserved reserved reserved reserved reserved 0 0 0 0 0 0 0 0 Read Write Reset Note: do not write to the reserved bits The System Test Register is reserved for production testing and is not allowed to be written to. System Trim Register 1 (SYSTRIM1) System Trim Register 2 (SYSTRIM2) Register Name and Address: IBIAS - $0F Bit7 6 HVDDT1 HVDDT0 0 0 Read Write Reset 5 4 3 2 1 Bit0 ITRIM3 ITRIM2 ITRIM1 ITRIM0 0 0 0 0 0 0 reserved reserved 0 0 Register Name and Address: IFBHBTRIM - $10 Bit7 Note: do not change (set) the reserved bits HVDDT1:0 - HVDD Overcurrent Shutdown Delay Bits These read/write bits allow to change the filter time (for capacitive load) for the HVDD over current detection. Reset clears the HVDDT1:0 bits an sets the delay to the maximum value. 6 5 4 3 2 1 Bit0 0 0 Read 0 0 0 0 0 0 Write CRHBHC1 CRHBHC0 CRHB5 CRHB4 CRHB3 CRHB2 Reset 0 0 0 0 0 0 CRHB1 CRHB0 0 0 CRHBHC1:0 - Current Recopy HB1:2 Trim Bits These write only bits are for trimming of the current recopy of the half-bridge HB1 and HB2 (CSA=0). The provided trim values have to be copied into these bits after every reset. Reset clears the CRHBHC1:0 bits. Table 15. HVDD Overcurrent Shutdown Selection Bits HVDDT1 HVDDT0 typical Delay 0 0 950us CRHBHC1 CRHBHC0 Adjustment 0 1 536us 0 0 0 1 0 234us 0 1 -10% Table 17. Current Recopy Trim for HB1:2 (CSA=0) 908E621 50 Analog Integrated Circuit Device Data Freescale Semiconductor FUNCTIONAL DEVICE OPERATION LOGIC COMMANDS AND REGISTERS CRHBHC1 CRHBHC0 Adjustment 1 0 5% 1 1 10% System Trim Register 3 (SYSTRIM3) Register Name and Address: IFBHSTRIM - $11 CRHB5:3 - Current Recopy HB3:4 Trim Bits These write only bits are for trimming of the current recopy of the half-bridge HB3 and HB4 (CSA=1). The provided trim values have to be copied into these bits after every reset. Reset clears the CRHB5:3 bits. Bit7 6 5 4 3 2 1 Bit0 Read 0 0 0 0 0 0 0 0 Write CRHBH C3 CRHBH C2 CRHS5 CRHS4 CRHS3 CRHS2 CRHS1 CRHS0 Reset 0 0 0 0 0 0 0 0 Table 18. Current Recopy Trim for HB3:4 (CSA=1) CRHB5 CRHB4 CRHB3 Adjustment 0 0 0 0 0 0 1 -5% 0 1 0 -10% 0 1 1 -15% 1 0 0 reserved 1 0 1 5% 1 1 0 10% 1 1 1 15% CRHB2:0 - Current Recopy HB1:2 Trim Bits These write only bits are for trimming of the current recopy of the half-bridge HB1 and HB2 (CSA=1). The provided trim values have to be copied into these bits after every reset. Reset clears the CRHB2:0 bits. CRHBHC3:2 - Current Recopy HB3:4 Trim Bits These write only bits are for trimming of the current recopy of the half-bridge HB3 and HB4 (CSA=0). The provided trim values have to be copied into these bits after every reset. Reset clears the CRHBHC3:2 bits. Table 20. Current Recopy Trim for HB3:4 (CSA=0) CRHBHC3 CRHBHC2 Adjustment 0 0 0 0 1 -10% 1 0 5% 1 1 10% CRHS5:3 - Current Recopy HS2:3 Trim Bits These write only bits are for trimming of the current recopy of the high-side HS2 and HS3. The provided trim values have to be copied into these bits after every reset. Reset clears the CRHS5:3 bits. Table 19. Current Recopy Trim for HB1:2 (CSA=1) CRHB2 CRHB1 CRHB0 Adjustment 0 0 0 0 0 0 1 -5% 0 1 0 -10% 0 1 1 -15% 1 0 0 reserved 1 0 1 5% 1 1 0 10% 1 1 1 15% Table 21. Current Recopy Trim for HS2:3 CRHS5 CRHS4 CRHS3 Adjustment 0 0 0 0 0 0 1 -5% 0 1 0 -10% 0 1 1 -15% 1 0 0 reserved 1 0 1 5% 1 1 0 10% 1 1 1 15% 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 51 FUNCTIONAL DEVICE OPERATION LOGIC COMMANDS AND REGISTERS CRHS2:0 - Current Recopy HS1 Trim Bits These write only bits are for trimming of the current recopy of the high-side HS1. The provided Trim values have to be copied into these bits after every reset. Reset clears the CRHS2:0 bits. Current Recopy Trim for HS1 CRHS2 CRHS1 CRHS0 Adjustment 0 0 0 0 0 0 1 -5% 0 1 0 -10% CRHS2 CRHS1 CRHS0 Adjustment 0 1 1 -15% 1 0 0 reserved 1 0 1 5% 1 1 0 10% 1 1 1 15% 908E621 52 Analog Integrated Circuit Device Data Freescale Semiconductor TYPICAL APPLICATIONS TYPICAL APPLICATIONS DEVELOPMENT SUPPORT As the 908E621 has the MC68HC908EY16 MCU embedded, typically all the development tools available for the MCU also apply for this device. However, due to the additional analog die circuitry and the nominal +12V supply voltage, some additional items have to be considered: • nominal 12V rather than 5V or 3V supply • high voltage VTST might be applied not only to IRQ terminal, but IRQ_A terminal • MCU monitoring (Normal request time-out) has to be disabled For a detailed information on the MCU related development support see the MC68HC908EY16 datasheet section development support. The programming is principally possible at two stages in the manufacturing process - first on chip level, before the IC is soldered onto a pcb board, and second after the IC is soldered onto the pcb board. Chip level programming At the Chip level, the easiest way is to only power the MCU with +5V (see Figure 30), and not to provide the analog chip with VSUP. In this setup all the analog terminal should be left open (e.g. VSUP[1:8]) and interconnections between MCU and analog die have to be separated (e.g. IRQ - IRQ_A). This mode is well described in the MC68HC908EY16 datasheet - section development support. VSUP[1:8] VDD GND[1:4] VSS +5V VDDA/VREFH RST EVDD RST_A +5V 1 1µF + 4 C1- GND C2+ V+ + V5 RS232 DB-9 16 + 3 1µF VCC C1+ 100nF IRQ VTST IRQ_A 1µF 15 4.7µF VSSA/VREFL MM908E621 EVSS +5V 1µF + 2 9.8304MHz CLOCK 6 +5V TESTMODE CLK MAX232 1µF C2- 10k PTC4/OSC1 PTB4/AD4 + 10k 74HC125 2 7 T2OUT 3 8 R2IN T2IN 10 6 74HC125 R2OUT 9 10k 5 DATA PTA1/KBD1 PTA0/KBD0 4 3 2 10k PTB3/AD3 1 5 Figure 30. Normal Monitor Mode Circuit (MCU only) Of course its also possible to supply the whole system with Vsup instead (12V) as described in Figure 31, page 54. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 53 TYPICAL APPLICATIONS PCB level programming system has to be powered up providing VSUP (see Figure 31).. If the IC is soldered onto the pcb board, its typically not possible to separately power the MCU with +5V. The whole VDD VSUP + 100nF 47µF VSUP[1:8] VDD GND[1:4] VSS VDDA/VREFH RST EVDD RST_A VDD 1 1µF 16 + + 3 4 1µF VCC C1+ C1- GND C2+ V+ + V5 RS232 DB-9 100nF IRQ VTST 4.7µF VSSA/VREFL MM908E621 IRQ_A EVSS 1µF 15 VDD 1µF + 2 10k 9.8304MHz CLOCK 6 VDD TESTMODE CLK MAX232 10k PTC4/OSC1 PTB4/AD4 1µF C2+ 10k 74HC125 2 7 T2OUT 3 8 R2IN T2IN 10 6 74HC125 R2OUT 9 10k 5 DATA PTA1/KBD1 PTA0/KBD0 10k 4 PTB3/AD3 3 2 1 5 Figure 31. Normal Monitor Mode Circuit Table 22 summarizes the possible configurations and the necessary setups. Table 22. Monitor Mode Signal Requirements and Options Mode IRQ RST TESTMODE Normal Monitor VTST VDD Reset Vector 1 X 1 $FFFF (blank) Serial Communication Mode Selection PTA0 PTA1 PTB3 PTB4 1 0 0 1 VDD Forced Monitor VDD 1 0 X VDD VDD 0 not $FFFF (not blank) X X X COP OFF disabled disabled 9.8304 MHz 2.4576 MHz 9600 OFF disabled disabled 9.8304 MHz 2.4576 MHz 9600 ON disabled disabled — Nominal 1.6MHz Nominal 6300 ON enabled enabled — Nominal 1.6MHz Nominal 6300 X GND User Communication Speed Normal Request Baud Bus Time-out External Clock Frequency Rate ICG X Notes 1. PTA0 must have a pullup resistor to VDD in monitor mode 2. 3. 4. 5. External clock is a 4.9152MHz, 9.8304MHz or 19.6608MHz canned oscillator on OCS1 Communication speed with external clock is depending on external clock value. Baud rate is bus frequency / 256 X = don’t care VTST is a high voltage VDD + 3.5V ≤ VTST ≤ VDD + 4.5V 908E621 54 Analog Integrated Circuit Device Data Freescale Semiconductor TYPICAL APPLICATIONS EMC/EMI RECOMMENDATIONS MCU digital supply terminals (EVDD and EVSS) This paragraph gives some device specific recommendations to improve EMC/EMI performance. Further generic design recommendations can be e.g. found on the Freescale web site www.freescale.com. VSUP terminals (VSUP[1:8]) Fast signal transitions on MCU terminals place high, shortduration current demands on the power supply. To prevent noise problems, take special care to provide power supply bypassing at the MCU. It is recommended that a high quality ceramic decoupling capacitor be placed between these terminals. Its recommended to place a high quality ceramic decoupling capacitor close to the VSUP terminals to improve EMC/EMI behavior. MCU analog supply terminals (VREFH/VDDA and VREFL/ VSSA) LIN terminal For DPI (Direct Power Injection) and ESD (Electrostatic Discharge) its recommended to place a high quality ceramic decoupling capacitor near the LIN terminal. An additional varistor will further increase the immunity against ESD. A ferrite in the LIN line will suppress some of the noise induced. Voltage regulator output terminals (VDD and VSS) To avoid noise on the analog supply terminals, its important to take special care on the layout. The MCU digital and analog supplies should be tied to the same potential via separate traces and connected to the voltage regulator output. Figure 32 and Figure 33 show the recommendations on schematics and layout level and Table 23 indicates recommended external components and layout considerations. Use a high quality ceramic decoupling capacitor to stabilize the regulated voltage. D1 VSUP[1:8] VSUP + C1 VDD C2 VSS VDDA/VREFH L1 LIN LIN EVDD V1 C5 C3 MM908E621 C4 EVSS GND[1:4] VSSA/VREFL Figure 32. EMC/EMI recommendations 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 55 TYPICAL APPLICATIONS 1 54 2 53 3 52 4 51 5 50 49 VDDA/VREFH 48 8 EVDD 47 9 EVSS 46 10 VSSA/VREFL 45 11 44 12 43 VDD 42 908E621 15 16 40 GND1 39 17 38 18 VSUP1 19 GND2 VSUP8 VSUP2 GND 33 23 VSUP6 32 VSUP5 31 GND3 GND4 30 VSUP3 VSUP4 24 26 29 D1 28 VBAT V1 27 35 34 22 25 37 36 VSUP7 20 21 41 C1 14 LIN VSS C2 C5 13 C4 7 C3 6 LIN L1 Figure 33. PCB Layout Recommendations . Table 23. Component Value Recommendation Component Recommended Value(1) D1 Comments / Signal routing reverse battery protection C1 Bulk Capacitor C2 100nF, SMD Ceramic, Low ESR Close to VSUP terminals with good ground return C3 100nF, SMD Ceramic, Low ESR Close (<3mm) to digital supply terminals (EVDD, EVSS) with good ground return. The positive analog (VREFH/ VDDA) and the digital (EVDD) supply should be connected right at the C3. C4 4,7uF, SMD Ceramic, Low ESR Bulk Capacitor C5 180pF, SMD Ceramic, Low ESR Close (<5mm) to LIN terminal. Total Capacitance on LIN has to be below 220pF. (Ctotal = CLIN-Terminal + C5 + CVaristor ~ 10pF + 180pF + 15pF) (2) Varistor Type TDK AVR-M1608C270MBAAB Optional (close to LIN connector) (2) SMD Ferrite Bead Type TDK MMZ2012Y202B Optional, (close to LIN connector) V1 L1 Notes 1. Freescale does not assume liability, endorse, or want components from external manufactures that are referenced in circuit drawings or tables. While Freescale offers component recommendations in this configuration, it is the customer’s responsibility to validate their application. 2. Components are recommended to improve EMC and ESD performance. 908E621 56 Analog Integrated Circuit Device Data Freescale Semiconductor PACKAGE DIMENSIONS PACKAGE DIMENSIONS Important For the most current revision of the package, visit www.freescale.com and do a keyword search on the 98A drawing number: 98ARL10519D. DWB SUFFIX 54-TERMINAL SOICW-EP 98ARL10519D ISSUE A 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 57 ADDITIONAL INFORMATION THERMAL ADDENDUM (REV 1.0) ADDITIONAL INFORMATION 908E621 THERMAL ADDENDUM (REV 1.0) INTEGRATED QUAD H-BRIDGE AND TRIPLE HIGH-SIDE DRIVER WITH EMBEDDED MCU AND LIN FOR MIRROR Introduction This thermal addendum ia provided as a supplement to the MM908E621 technical data sheet. The addendum provides thermal performance information that may be critical in the design and development of system applications. All electrical, application and packaging information is provided in the data sheet. Package and Thermal Considerations This MM908E621 is a dual die package. There are two heat sources in the package independently heating with P1 and P2. This results in two junction temperatures, TJ1 and TJ2, and a thermal resistance matrix with RθJAmn. For m, n = 1, RθJA11 is the thermal resistance from Junction 1 to the reference temperature while only heat source 1 is heating with P1. For m = 1, n = 2, RθJA12 is the thermal resistance from Junction 1 to the reference temperature while heat source 2 is heating with P2. This applies to RθJ21 and RθJ22, respectively. TJ1 TJ2 = RθJA11 RθJA12 RθJA21 RθJA22 . P1 P2 54-TERMINAL SOICW-EP DWB SUFFIX 98ARL105910 54-TERMINAL SOICW-EP Note For package dimensions, refer to the 908E621 device datasheet. The stated values are solely for a thermal performance comparison of one package to another in a standardized environment. This methodology is not meant to and will not predict the performance of a package in an application-specific environment. Stated values were obtained by measurement and simulation according to the standards listed below. Standards Table 24. Thermal Performance Comparison 1.0 1 = Power Chip, 2 = Logic Chip [°C/W] Thermal Resistance m = 1, n=1 m = 1, n = 2 m = 2, n = 1 m = 2, n=2 RθJAmn (1)(2) 23 20 24 RθJBmn (2)(3) 9.0 6.0 10 RθJAmn (1)(4) 52 47 52 RθJCmn (5) 1.0 0 2.0 1.0 0.2 Notes: 1. Per JEDEC JESD51-2 at natural convection, still air condition. 2. 2s2p thermal test board per JEDEC JESD51-7and JESD51-5. 3. Per JEDEC JESD51-8, with the board temperature on the center trace near the power outputs. 4. Single layer thermal test board per JEDEC JESD51-3 and JESD51-5. 5. Thermal resistance between the die junction and the exposed pad, “infinite” heat sink attached to exposed pad. 0.2 * All measurements are in millimeters Soldermast openings Thermal vias connected to top buried plane 54 Terminal SOIC-EP 0.65 mm Pitch 17.9 mm x 7.5 mm Body 10.3 mm x 5.1 mm Exposed Pad Figure 34. Thermal Land Pattern for Direct Thermal Attachment Per JEDEC JESD51-5 908E621 58 Analog Integrated Circuit Device Data Freescale Semiconductor ADDITIONAL INFORMATION THERMAL ADDENDUM (REV 1.0) PTC4/OSC1 PTC3/OSC2 PTC2/MCLK PTB5/AD5 PTB4/AD4 PTB3/AD3 1 54 2 53 3 52 4 51 5 50 6 49 IRQ RST 7 48 8 47 (PTD0/TACH0/BEMF -> PWM) PTD1/TACH1 9 46 10 45 RST_A IRQ_A 11 44 LIN A0CST A0 GND1 HB4 VSUP1 GND2 HB3 VSUP2 NC NC TESTMODE GND3 HB2 VSUP3 13 12 14 15 43 42 Exposed Pad 41 40 16 39 17 38 18 37 19 36 20 35 21 34 22 33 23 32 24 31 25 30 26 29 27 28 A PTA0/KBD0 PTA1/KBD1 PTA2/KBD2 FLSVPP PTA3/KBD3 PTA4/KBD4 VDDA/VREFH EVDD EVSS VSSA/VREFL (PTE1/RXD <- RXD) VSS VDD HVDD L0 H0 HS3 VSUP8 HS2 VSUP7 HS1b HS1a VSUP6 VSUP5 GND4 HB1 VSUP4 908E621 Terminal Connections 54-Terminal SOICW-EP 0.65 mm Pitch 17.9 mm x 7.5 mm Body 10.3 mm x 5.1 mm Exposed Pad Figure 35. Thermal Test Board Device on Thermal Test Board Material: Outline: Area A: Ambient Conditions: Single layer printed circuit board FR4, 1.6 mm thickness Cu traces, 0.07 mm thickness 80 mm x 100 mm board area, including edge connector for thermal testing Cu heat-spreading areas on board surface Natural convection, still air Table 25. Thermal Resistance Performance 1 = Power Chip, 2 = Logic Chip (°C/W) Thermal Resistance RθJAmn RθJSmn Area A (mm2) m = 1, n=1 m = 1, n = 2 m = 2, n = 1 m = 2, n=2 0 53 48 53 300 39 34 38 600 35 30 34 0 21 16 20 300 15 11 15 600 14 9.0 13 RθJA is the thermal resistance between die junction and ambient air. RθJSmn is the thermal resistance between die junction and the reference location on the board surface near a center lead of the package. This device is a dual die package. Index m indicates the die that is heated. Index n refers to the number of the die where the junction temperature is sensed. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 59 ADDITIONAL INFORMATION THERMAL ADDENDUM (REV 1.0) Thermal Resistance [ºC/W] 60 50 40 30 20 x 10 RθJA11 RθJA22 RθJA12 = RθJA21 0 0 300 600 Heat spreading area A [mm²] Figure 36. Device on Thermal Test Board RθJA Thermal Resistance [ºC/W] 100 10 1 x 0.1 1.00E-03 1.00E-02 RθJA11 RθJA22 RθJA12 = RθJA21 1.00E-01 1.00E+00 1.00E+01 1.00E+02 1.00E+03 1.00E+04 Time[s] Figure 37. Transient Thermal Resistance RθJA (1.0 W Step Response) Device on Thermal Test Board Area A = 600 (mm2) 908E621 60 Analog Integrated Circuit Device Data Freescale Semiconductor REVISION HISTORY REVISION HISTORY REVISION DATE DESCRIPTION OF CHANGES 3.0 2/2007 • Implemented Revision History page • Changed Table 3, Ststic Electrical Characteristics, Hall-Effect Sensor Input H0 - 2pin Hall Sensor Input Mode (H0MS = 1), Sense Current Hysteresis on page 14 from a Minimum of 800 to 600 and Typical from 1100 to none. • Removed “Advance” watermark and updated to final Data Sheet. • Removed Peak Package Reflow Temperature During Reflow (solder reflow) parameter from Maximum Ratings on page 6. Added note with instructions from www.freescale.com. 4.0 6/2007 • Updated to Final by removing “Advance Information” from page 1. 908E621 Analog Integrated Circuit Device Data Freescale Semiconductor 61 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http:// www.freescale.com/epp. USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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