Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz • • • • • Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB) High Gain, High Efficiency and High Linearity EVM = 3% Typ @ Pout = +19 dBM, 14% PAE RoHS Compliant In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel. 2400- 2500 MHz, 27.5 dB, 26.5 dBm 802.11g WLAN POWER AMPLIFIER InGaP HBT CASE 1483 - 01 QFN 3x3 Table 1. Maximum Ratings Rating Symbol Value Unit Collector Supply VCC 5 V Base Supply First Stage VB1 5 V Base Supply Second Stage VB2 5 V VBIAS 5 V IDC 171 mA Symbol Value Unit RθJC 185 (1) °C/W Case Operating Temperature Range TC - 40 to +85 °C Storage Temperature Range Tstg - 55 to +150 °C Detector Bias Supply DC Current Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 2 (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) II (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C 1. Simulated. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MMG2401NR2 1 Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted.) VCC = 3.3 Vdc, VBIAS = 3 Vdc, ICQ = 83 mA, f = 2450 MHz Characteristic Symbol Min Typ Max Unit P1dB 24 26.5 — dBm Gp 26 27.5 29 dB Error Vector Magnitude (Pout = 19 dBm, 64 QAM/54 Mbps) EVM — 3 — % Total Current (Pout = 19 dBm) ICtotal — 210 — mA Quiescent Current IDCQ — 156 — mA Bias Control Reference Current (ICQ = 66 mA) Iref — 8.4 — mA Gain Flatness (Over 100 MHz) GF — ±0.2 — dB Gain Variation over Temperature ( - 40 to 85°C) — — ±1 — dB Input Return Loss IRL — - 10 - 7.5 dB Reverse Isolation — — - 35 — dB Second Harmonic (Pout = 19 dBm) — — - 45 — dBc Third Harmonic (Pout = 19 dBm) — — - 35 — dBc Ramp - On Time (10 - 90%) tON — 100 — ns Output Power at 1dB Compression Power Gain (Pout = 19 dBm) MMG2401NR2 2 RF Device Data Freescale Semiconductor Table 6. Functional Pin Description Name Pin Number VB1 1 RFIN 2, 3 Description VCC1 NC VB2 12 11 10 Base power supply for first stage amplifier. RF input for the power amplifier. This pin is DC - shorted to GND and AC - coupled to the transistor base of the first stage. VBIAS 4 Detector bias voltage supply. VREF 5 Detector output voltage reference. Vout - VREF is useful for tracking detector performance over temperature. VOUT 6 Detector output voltage. VCC2 7 Collector power supply for second stage amplifier. RFOUT 8, 9 RF output for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. VB2 10 Base power supply for second stage amplifier. NC 11 Not connected. VCC1 12 Collector power supply for first stage amplifier. GND Backside Center Metal VB1 1 9 RFOUT RFIN 2 8 RFOUT RFIN 3 7 VCC2 6 4 5 VBIAS VREF VOUT (Top View) Figure 1. Pin Connections The center metal base of the QFN 3x3 package provides both DC and RF ground as well as heat sink contact for the power amplifier. MMG2401NR2 RF Device Data Freescale Semiconductor 3 VB1 VCC1 C11 C1 C2 C3 C4 VB2 VCC2 C5 C12 C10 C9 C8 C7 C6 L1 RF INPUT RF OUTPUT Z1 Z2 C15 C14 VBIAS Z1, Z2 PCB VREF C13 VOUT 0.10″ x 0.5395″ Microstrip Getek ML200M, 0.005″, εr = 3.8 Figure 2. MMG2401NR2 Test Circuit Schematic Table 7. MMG2401NR2 Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C6 1 μF Chip Capacitor 12065A105JAT2A AVX C2, C7 0.1 μF Chip Capacitor 12065A104JAT2A AVX C3, C8 0.01 μF Chip Capacitor 12065A103JAT2A AVX C4, C9, C11, C12 100 pF Chip Capacitor 08055A101FAT2A AVX C5, C10, C13, C14, C15 20 pF Chip Capacitor 12065A200CAT2A AVX L1 7.5 nH Chip Inductor 0402CS - 7N5XJBC Coilcraft MMG2401NR2 4 RF Device Data Freescale Semiconductor C1 C2 C3 C4 C11 C12 C5 VB2 VB1 VCC1 VCC2 VBIAS C14 C15 VREF VOUT C13 L1 C10 C9 C8 C7 C6 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 3. MMG2401NR2 Test Circuit Component Layout MMG2401NR2 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS EVM, ERROR VECTOR MAGNITUDE (%) 7 28 TC = 25_C 27 −40_C 85_C 26 25 VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 24 5 0 10 15 5 4 3 2 85_C 1 5 0 10 15 20 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 4. Power Gain versus Output Power Figure 5. Error Vector Magnitude versus Output Power TC = −40_C 20 25_C 15 85_C 10 VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 5 0 5 0 10 15 1 TC = 85_C 0.1 −40_C 25_C VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 0.01 5 0 25 20 25 10 10 15 20 25 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 7. Detector Output Voltage versus Output Power Figure 6. Efficiency versus Output Power 4 250 VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 2 200 I CC , TOTAL CURRENT (mA) 3 AM to PM (_) TC = 25_C −40_C 0 25 η, EFFICIENCY (%) VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 6 25 20 Vout , DETECTOR OUTPUT VOLTAGE (V) Gp, POWER GAIN (dB) 29 1 TC = 85_C 150 0 25_C 100 −1 −2 −40_C VCC = 3.3 Vdc VB1 = 2.9 Vdc f = 2450 MHz 50 −3 −4 0 0 5 10 15 20 25 30 0 5 10 15 20 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 8. AM to PM versus Output Power Figure 9. Total Current versus Output Power 25 MMG2401NR2 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 0 IRL, INPUT RETURN LOSS (dB) 35 G p , POWER GAIN (dB) 30 25 20 15 VCC = 3.3 Vdc VB1 = 2.9 Vdc 10 2.1 2.2 2.3 2.4 2.5 2.6 2.7 −10 −15 −20 VCC = 3.3 Vdc VB1 = 2.9 Vdc −25 2.8 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 10. Power Gain (S21) versus Frequency Figure 11. Input Return Loss (S11) versus Frequency 2.8 0 −20 ORL, OUTPUT RETURN LOSS (dB) REVERSE TRANSCONDUCTANCE ISOLATION (dB) 2 −5 −30 −40 −50 −60 VCC = 3.3 Vdc VB1 = 2.9 Vdc −70 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 −5 −10 −15 −20 VCC = 3.3 Vdc VB1 = 2.9 Vdc −25 2.8 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 f, FREQUENCY (GHz) f, FREQUENCY (GHz) Figure 12. Reverse Transconductance Isolation (S12) versus Frequency Figure 13. Output Return Loss (S22) versus Frequency 2.8 MMG2401NR2 RF Device Data Freescale Semiconductor 7 A 4X D C b 1 E E/2 PIN1 ID N=12 4X D 1 2 3 0.45 1 2 3 B 2 F F/2 (Ny - 1)e L 0.25 MIN. 0.25 MIN. SEATING PLANE TOP VIEW SIDE VIEW e (Nx - 1)e 2 BOTTOM VIEW NOTES: 1. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.20 AND 0.25 MM FROM TERMINAL TIP. 2. N IS THE NUMBER OF TERMINALS (12). Nx IS THE NUMBER OF TERMINALS IN X−DIRECTION AND Ny IS THE NUMBER OF TERMINALS IN Y−DIRECTION. 3. ALL DIMENSIONS ARE IN MILLIMETERS. DIM A B C D E F b e Nx Ny SYMBOLS EXPOSED PAD MIN 1.15 MIN NOM MAX 3.00 BSC 3.00 BSC − 0.85 1.00 0.24 0.42 0.60 SEE EXPOSED PAD SEE EXPOSED PAD 0.18 0.23 0.30 0.50 BSC 3 3 E NOM 1.30 MAX 1.45 MIN 1.15 STANDARD DETAIL ”A” - PIN #1 ID AND TIE BAR MARK OPTION F NOM 1.30 MAX 1.45 Figure 14. MMG2401NR2 Specific Mechanical Outline Information MMG2401NR2 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS A 3 M PIN 1 INDEX AREA 2X 0.1 C 3 DETAIL G B M 2X 0.1 C 1.55 1.25 12 10 EXPOSED DIE ATTACH PAD DETAIL M PIN 1 INDEX 9 1 1.55 1.25 3 7 DETAIL N 6 12X 0.75 0.50 9 4 12X 0.30 0.18 0.10 M 8X 0.5 C A B VIEW M - M CASE 1483 - 01 ISSUE A QFN 3x3 NOTES: 1. ALL DIMENSIONS ARE IN MILLIMETERS. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. THE COMPLETE JEDEC DESIGNATOR FOR THIS PACKAGE IS: HF−PQFP−N. 4. FOR ANVIL SINGULATED QFN PACKAGES, MAXIMUM DRAFT ANGLED IS 12 _. 5. PACKAGE WARPAGE MAX 0.05 MM. 6. CORNER CHAMFER MAY NOT BE PRESENT. DIMENSIONS OF OPTIONAL FEATURES ARE FOR REFERENCE ONLY. 7. CORNER LEADS CAN BE USED FOR THERMAL OR GROUND AND ARE TIED TO THE DIE ATTACH PAD. THESE LEADS ARE NOT INCLUDED IN THE LEAD COUNT. 8. COPLANARITY APPLIES TO LEAD, CORNER LEADS, AND DIE ATTACH PAD. 9. THIS DIMENSION APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.20 MM AND 0.25 MM FROM TERMINAL TIP. Page 1 of 3 MMG2401NR2 RF Device Data Freescale Semiconductor 9 0.60 0.24 (45_) (0.25) (0.25) 0.60 0.24 DETAIL N PREFERRED CORNER CONFIGURATION DETAIL N CORNER CONFIGURATION 6 6 0.1 C 1.0 0.8 1.00 0.75 0.05 C 0.05 0.00 C DETAIL G VIEW ROTATED 90_ CW 8 SEATING PLANE CASE 1483 - 01 ISSUE A QFN 3x3 Page 2 of 3 MMG2401NR2 10 RF Device Data Freescale Semiconductor 0.217 0.137 DETAIL S (0.25) 0.217 0.137 (0.1) (0.25) DETAIL S BACKSIDE PIN 1 INDEX DETAIL M PREFERRED BACKSIDE PIN 1 INDEX 7 TIE BAR MARK OPTION PIN 1 ID 4X 0.23 0.13 (45_ ) 4X 0.65 0.30 (0.45) (0.35) R0.2 PIN 1 ID DETAIL M DETAIL M BACKSIDE PIN 1 INDEX OPTION BACKSIDE PIN 1 INDEX OPTION CASE 1483 - 01 ISSUE A QFN 3x3 Page 3 of 3 MMG2401NR2 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 [email protected] RoHS-compliant and/or Pb- free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb- free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale.s Environmental Products program, go to http://www.freescale.com/epp. Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MMG2401NR2 Document Number: MMG2401 Rev. 3, 5/2006 12 RF Device Data Freescale Semiconductor