New Product VSSB3L6S Vishay General Semiconductor Surface Mount Trench MOS Barrier Schottky Rectifier FEATURES • Low profile package ® TMBS • Ideal for automated placement • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Not recommended for PCB bottom side wave mounting DO-214AA (SMB) • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC PRIMARY CHARACTERISTICS • Halogen-free according to IEC 61249-2-21 definition IF(AV) 3.0 A VRRM 60 V IFSM 80 A VF at IF = 3.0 A 0.42 V TJ max. 150 °C TYPICAL APPLICATIONS For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test per Polarity: Color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code VSSB3L6S UNIT 3L6 Maximum repetitive peak reverse voltage Maximum DC forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range VRRM 60 IF (1) 3.0 IF (2) 2.6 IFSM 80 A dV/dt 10 000 V/μs TJ, TSTG - 55 to + 150 °C V A Notes (1) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Document Number: 89347 Revision: 18-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 New Product VSSB3L6S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 3.0 A Instantaneous forward voltage VR = 60 V Reverse current Typical junction capacitance TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF (1) TYP. MAX. 0.49 0.59 0.42 0.52 - 1200 μA 5 25 mA 358 - pF V IR (2) 4.0 V, 1 MHz UNIT CJ Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise specified) PARAMETER SYMBOL Typical thermal resistance VSSB3L6S RθJA (1) 115 RθJM (2) 13 UNIT °C/W Notes (1) Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance R θJA - junction to ambient (2) Mounted on 10 mm x 10 mm pad areas, 1 oz. FR4 PCB; R θJM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE VSSB3L6S-M3/52T 0.096 52T 750 7" diameter plastic tape and reel VSSB3L6S-M3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 2.0 3.0 2.5 2.0 1.5 1.0 TM Measured at Terminal 0.5 D = 0.8 D = 0.5 D = 0.3 1.8 Average Power Loss (W) Average Forward Rectified Current (A) 3.5 D = 0.2 1.6 D = 1.0 1.4 D = 0.1 1.2 1.0 0.8 T 0.6 0.4 0.2 D = tp/T tp 0 0 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89347 Revision: 18-Oct-10 New Product VSSB3L6S Vishay General Semiconductor 1000 Junction Capacitance (pF) Instantaneous Forward Current (A) 100 TA = 150 °C 10 TA = 125 °C 1 TA = 100 °C 100 TA = 25 °C 0.1 0.1 10 0.2 0.3 0.4 0.6 0.5 0.7 0.8 0.9 0.1 1.0 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 5 - Typical Junction Capacitance 100 1000 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p TA = 150 °C 10 TA = 125 °C TA = 100 °C 1 0.1 0.01 TA = 25 °C 0.001 20 40 60 80 Junction to Ambient 100 10 1 0.01 100 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. 4 - Typical Reverse Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.096 (2.44) 0.084 (2.13) 0.220 REF. 0.008 (0.2) 0 (0) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Document Number: 89347 Revision: 18-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1