Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF6S18060MR1 MRF6S18060MBR1 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs GSM Application • Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 15 dB Drain Efficiency - 50% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg., Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz) Power Gain — 15.5 dB Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM — 2% rms • Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • 200°C Capable Plastic Package • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. 1800 - 2000 MHz, 60 W, 26 V GSM/GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 TO - 270 WB - 4 PLASTIC MRF6S18060MR1 CASE 1484 - 04, STYLE 1 TO - 272 WB - 4 PLASTIC MRF6S18060MBR1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate - Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 216 1.2 W W/°C Storage Temperature Range Tstg - 65 to +175 °C Operating Junction Temperature TJ 200 °C Symbol Value (1) Unit ARCHIVE INFORMATION ARCHIVE INFORMATION Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications. Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 60 W CW Case Temperature 77°C, 25 W CW RθJC 0.81 0.95 °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6S18060MR1 MRF6S18060MBR1 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1B (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 3 260 °C Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) VGS(Q) 2 2.8 4 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) — 0.24 — Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs — 5.3 — S Crss — 1.5 — pF On Characteristics Dynamic Characteristics Reverse Transfer Capacitance (1) (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W, f = 1930 MHz, f = 1990 MHz Gps 14 15 17 dB Power Gain Drain Efficiency ηD 48 50 — % Input Return Loss IRL — - 12 -9 dB P1dB 60 65 — W Pout @ 1 dB Compression Point 1. Part is internally matched both on input and output. ARCHIVE INFORMATION ARCHIVE INFORMATION Off Characteristics (continued) MRF6S18060MR1 MRF6S18060MBR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ = 450 mA, Pout = 25 W Avg., 1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz Power Gain Gps — 15.5 — dB Drain Efficiency ηD — 32 — % Error Vector Magnitude EVM — 2 — % rms Spectral Regrowth at 400 kHz Offset SR1 — - 62 — dBc Spectral Regrowth at 600 kHz Offset SR2 — - 76 — dBc Power Gain Gps — 15 — dB Drain Efficiency ηD — 50 — % Input Return Loss IRL — - 12 — dB P1dB — 65 — W Pout @ 1 dB Compression Point, CW ARCHIVE INFORMATION ARCHIVE INFORMATION Typical CW Performances (In Freescale Broadband Test Fixture, 50 οhm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W, 1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 3 VBIAS VSUPPLY R1 C1 R2 C2 Z6 C9 + C10 C11 Z13 C7 R3 RF INPUT Z8 Z1 Z2 Z3 Z4 Z5 Z9 Z10 Z11 Z7 Z12 RF OUTPUT C4 C8 Z1 Z2* Z3* Z4* Z5 Z6 Z7, Z8 C5 DUT C6 0.250″ x 0.083″ Microstrip 0.950″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.315″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 0.680″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z9 Z10* Z11* Z12 Z13 PCB 0.485″ x 1.000″ Microstrip 0.500″ x 0.083″ Microstrip 0.895″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.200″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning Figure 1. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1900 MHz Table 6. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1900 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C5 1.5 pF 100B Chip Capacitor 100B1R5BW ATC C6 1.8 pF 100B Chip Capacitor 100B1R8BW ATC C7, C8 1 pF 100B Chip Capacitors 100B1R0BW ATC C9, C10 10 μF Chip Capacitors (2220) C5750X5R1H106MT TDK C11 220 μF, 63 V Electrolytic Capacitor, Radial 13668221 Philips R1, R2 10 kW, 1/4 W Chip Resistors (1206) R3 10 W, 1/4 W Chip Resistor (1206) ARCHIVE INFORMATION ARCHIVE INFORMATION C3 MRF6S18060MR1 MRF6S18060MBR1 4 RF Device Data Freescale Semiconductor C11 VGS R1 VDS R2 C2 C1 C9 C10 R3 C5 C8 C4 MRF6S18060N/NB Rev. 0 Figure 2. MRF6S18060MR1(MBR1) Test Circuit Component Layout — 1900 MHz ARCHIVE INFORMATION C6 CUT OUT AREA ARCHIVE INFORMATION C3 C7 MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 5 Gps, POWER GAIN (dB) 17 ηD 57 0 55 −5 53 16 Gps 51 15 IRL 49 14 ηD, DRAIN EFFICIENCY (%) 18 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) TYPICAL CHARACTERISTICS — 1900 MHz VDD = 26 Vdc IDQ = 600 mA 1920 1940 1960 1980 2000 47 2020 −25 ARCHIVE INFORMATION ARCHIVE INFORMATION 13 1900 f, FREQUENCY (MHz) Gps, POWER GAIN (dB) 17 ηD 16 42 0 40 −5 38 Gps 36 15 IRL 14 34 ηD, DRAIN EFFICIENCY (%) 18 −10 −15 −20 IRL, INPUT RETURN LOSS (dB) Figure 3. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 60 Watts VDD = 26 Vdc IDQ = 600 mA 13 1900 1920 1940 1960 1980 2000 32 2020 −25 f, FREQUENCY (MHz) Figure 4. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 30 Watts 17 17 IDQ = 600 mA f = 1960 MHz IDQ = 900 mA 750 mA 16 Gps, POWER GAIN (dB) Gps, POWER GAIN (dB) 16 600 mA 15 450 mA 14 300 mA 15 VDD = 32 V 14 26 V 13 13 VDD = 26 Vdc f = 1960 MHz 20 V 16 V 12 V 24 V 12 12 1 10 100 0 20 40 60 80 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) CW Figure 5. Power Gain versus Output Power Figure 6. Power Gain versus Output Power 100 MRF6S18060MR1 MRF6S18060MBR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS — 1900 MHz 70 15 50 85_C 14 40 30 12 20 VDD = 26 Vdc IDQ = 600 mA f = 1960 MHz 10 1 10 0 100 10 VDD = 26 Vdc IDQ = 450 mA 3 2.5 25 W Avg. 2 1.5 10 W Avg. 1 1900 1920 1940 1980 2000 2020 Figure 7. Power Gain and Drain Efficiency versus CW Output Power Figure 8. Error Vector Magnitude versus Frequency 60 TC = −30_C, 25_C VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz 50 85_C 40 8 ηD 30 6 85_C 25_C 4 20 −30_C 2 10 EVM 0 1 0 100 10 −55 Pout = 35 W Avg. SR 400 kHz −60 25 W Avg. −65 10 W Avg. VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz −70 35 W Avg. SR 600 kHz −75 25 W Avg. 10 W Avg. −80 1920 1940 Pout, OUTPUT POWER (WATTS) AVG. 1960 1980 2000 f, FREQUENCY (MHz) Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency Figure 9. Error Vector Magnitude and Drain Efficiency versus Output Power −55 SPECTRAL REGROWTH @ 600 kHz (dBc) −45 SPECTRAL REGROWTH @ 400 kHz (dBc) 1960 f, FREQUENCY (MHz) 12 10 Pout = 35 W Avg. 3.5 Pout, OUTPUT POWER (WATTS) CW SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) EVM, ERROR VECTOR MAGNITUDE (% rms) 85_C ηD 13 11 ARCHIVE INFORMATION 60 25_C ARCHIVE INFORMATION Gps 4 ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 16 25_C ηD, DRAIN EFFICIENCY (%) TC = −30_C −30_C EVM, ERROR VECTOR MAGNITUDE (% rms) 17 VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz −50 −55 TC = −30_C −60 −65 25_C 85_C −70 −75 VDD = 26 Vdc IDQ = 450 mA f = 1960 MHz −60 TC = 85_C −65 25_C −70 −30_C −75 −80 −85 0 10 20 30 40 50 60 0 10 20 30 40 50 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. Figure 11. Spectral Regrowth at 400 kHz versus Output Power Figure 12. Spectral Regrowth at 600 kHz versus Output Power 60 MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS X AMPS2) 1.E+09 1.E+08 1.E+07 ARCHIVE INFORMATION 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 13. MTTF Factor versus Junction Temperature ARCHIVE INFORMATION 1.E+06 MRF6S18060MR1 MRF6S18060MBR1 8 RF Device Data Freescale Semiconductor Zo = 10 Ω f = 1930 MHz ARCHIVE INFORMATION ARCHIVE INFORMATION Zsource f = 1990 MHz f = 1990 MHz f = 1930 MHz Zload VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W CW f MHz Zsource Ω Zload Ω 1930 8.00 - j6.48 2.83 - j5.13 1960 7.57 - j6.82 2.63 - j4.84 1990 7.06 - j7.06 2.44 - j4.54 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance — 1900 MHz MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 9 VBIAS VSUPPLY R1 C1 R2 C2 Z6 C10 C11 + C12 Z14 R3 Z8 Z9 Z10 Z11 Z12 Z1 Z2 Z3 Z4 Z5 Z7 C4 C8 C3 ARCHIVE INFORMATION Z13 C6 Z1 Z2* Z3* Z4* Z5 Z6 Z7, Z8 C5 C9 DUT C7 0.250″ x 0.083″ Microstrip 0.320″ x 0.083″ Microstrip 0.660″ x 0.083″ Microstrip 0.535″ x 0.083″ Microstrip 0.365″ x 1.000″ Microstrip 0.860″ x 0.080″ Microstrip 0.115″ x 1.000″ Microstrip Z9 Z10* Z11* Z12* Z13 Z14 PCB 0.485″ x 1.000″ Microstrip 0.420″ x 0.083″ Microstrip 0.230″ x 0.083″ Microstrip 0.745″ x 0.083″ Microstrip 0.250″ x 0.083″ Microstrip 0.640″ x 0.080″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 * Variable for tuning Figure 15. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1800 MHz Table 7. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1800 MHz Part Description Part Number Manufacturer C1, C2, C3, C4 6.8 pF 100B Chip Capacitors 100B6R8CW ATC C5 0.8 pF 600B Chip Capacitor 600B0R8BW ATC C6, C9 0.5 pF 600B Chip Capacitors 600B0R5BW ATC C7 2.2 pF 200B Chip Capacitor 200B2R2BW ATC C8 1.5 pF 600B Chip Capacitor 600B1R5BW ATC C10, C11 10 μF Chip Capacitors (2220) C5750X5R1H106MT TDK C12 220 μF, 63 V Electrolytic Capacitor, Radial 13668221 Philips R1, R2 10 kW, 1/4 W Chip Resistors (1206) R3 10 W, 1/4 W Chip Resistor (1206) ARCHIVE INFORMATION RF INPUT RF OUTPUT MRF6S18060MR1 MRF6S18060MBR1 10 RF Device Data Freescale Semiconductor VGS C12 R1 VDS R2 C2 C1 C10 C11 R3 C5 C7 C8 C9 MRF6S18060N/NB Rev. 0 Figure 16. MRF6S18060MR1(MBR1) Test Circuit Component Layout — 1800 MHz C4 ARCHIVE INFORMATION ARCHIVE INFORMATION C3 CUT OUT AREA C6 MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 11 TYPICAL CHARACTERISTICS — 1800 MHz 17 57 0 55 −4 15 53 14 51 IRL 13 49 −8 −12 −16 IRL, INPUT RETURN LOSS (dB) Gps, POWER GAIN (dB) Gps ηD, DRAIN EFFICIENCY (%) ηD 16 VDD = 26 Vdc IDQ = 600 mA 1820 1840 1860 1880 1900 47 1920 −20 17 0 41 −4 15 39 ηD 37 14 IRL 13 35 ηD, DRAIN EFFICIENCY (%) Gps 16 Gps, POWER GAIN (dB) 43 −8 −12 −16 IRL, INPUT RETURN LOSS (dB) Figure 17. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 60 Watts VDD = 26 Vdc IDQ = 600 mA 12 1760 1780 1800 1820 1840 1860 1880 1900 33 1920 −20 f, FREQUENCY (MHz) Figure 18. Power Gain, Input Return Loss and Drain Efficiency versus Frequency @ Pout = 30 Watts EVM, ERROR VECTOR MAGNITUDE (% rms) 4.5 4 Pout = 35 W Avg. 3.5 3 VDD = 26 Vdc IDQ = 450 mA 2.5 2 25 W Avg. 1.5 15 W Avg. 1 0.5 1780 1800 1820 1840 1860 1880 1900 f, FREQUENCY (MHz) Figure 19. Error Vector Magnitude versus Frequency 1920 10 50 VDD = 26 Vdc IDQ = 450 mA f = 1860 MHz 8 40 ηD 6 30 4 TC = 25_C 2 10 EVM 0 1 20 10 Pout, OUTPUT POWER (WATTS) AVG. ARCHIVE INFORMATION 1800 f, FREQUENCY (MHz) EVM, ERROR VECTOR MAGNITUDE (% rms) ARCHIVE INFORMATION 1780 ηD, DRAIN EFFICIENCY (%) 12 0 100 Figure 20. Error Vector Magnitude and Drain Efficiency versus Output Power MRF6S18060MR1 MRF6S18060MBR1 12 RF Device Data Freescale Semiconductor VDD = 26 Vdc IDQ = 450 mA Pout = 35 W Avg. −55 −60 25 W Avg. SR 400 kHz −65 15 W Avg. −70 35 W Avg. −75 −80 1780 25 W Avg. 10 W Avg. 1800 1820 1840 SR 600 kHz 1860 1880 1900 1920 f, FREQUENCY (MHz) −60 SPECTRAL REGROWTH @ 600 kHz (dBc) −45 −50 TC = 25_C −55 −60 −65 VDD = 26 Vdc IDQ = 450 mA f = 1860 MHz −70 −75 −65 TC = 25_C −70 −75 VDD = 26 Vdc IDQ = 450 mA f = 1860 MHz −80 −85 0 10 20 30 40 50 60 0 10 20 30 40 50 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) AVG. Figure 22. Spectral Regrowth at 400 kHz versus Output Power Figure 23. Spectral Regrowth at 600 kHz versus Output Power 60 ARCHIVE INFORMATION SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc) −50 Figure 21. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency SPECTRAL REGROWTH @ 400 kHz (dBc) ARCHIVE INFORMATION TYPICAL CHARACTERISTICS — 1800 MHz MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 13 Zo = 10 Ω ARCHIVE INFORMATION ARCHIVE INFORMATION f = 1880 MHz f = 1805 MHz Zload f = 1805 MHz f = 1880 MHz Zsource VDD = 26 Vdc, IDQ = 600 mA, Pout = 65 W CW f MHz Zsource Ω Zload Ω 1805 4.16 - j7.56 3.29 - j4.91 1840 3.89 - j7.40 3.10 - j4.69 1880 3.56 - j7.21 2.88 - j4.45 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 24. Series Equivalent Source and Load Impedance — 1800 MHz MRF6S18060MR1 MRF6S18060MBR1 14 RF Device Data Freescale Semiconductor NOTES MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 15 PACKAGE DIMENSIONS E1 B A 2X E3 GATE LEAD DRAIN LEAD D D1 4X e 4X b1 aaa M C A 2X 2X D2 c1 E H DATUM PLANE F ZONE J A A1 2X A2 E2 NOTE 7 E5 E4 4 D3 3 ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇ E5 BOTTOM VIEW C SEATING PLANE PIN 5 NOTE 8 1 2 CASE 1486 - 03 ISSUE C TO - 270 WB - 4 PLASTIC MRF6S18060MR1 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DATUM PLANE −H− IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D" AND “E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D" AND “E1" DO INCLUDE MOLD MISMATCH AND ARE DETER− MINED AT DATUM PLANE −H−. 5. DIMENSION “b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE “b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS −A− AND −B− TO BE DETERMINED AT DATUM PLANE −H−. 7. DIMENSION A2 APPLIES WITHIN ZONE “J" ONLY. 8. HATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 e aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .712 .720 .688 .692 .011 .019 .600 −−− .551 .559 .353 .357 .132 .140 .124 .132 .270 −−− .346 .350 .025 BSC .164 .170 .007 .011 .106 BSC .004 STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 18.08 18.29 17.48 17.58 0.28 0.48 15.24 −−− 14 14.2 8.97 9.07 3.35 3.56 3.15 3.35 6.86 −−− 8.79 8.89 0.64 BSC 4.17 4.32 0.18 0.28 2.69 BSC 0.10 DRAIN DRAIN GATE GATE SOURCE MRF6S18060MR1 MRF6S18060MBR1 16 RF Device Data Freescale Semiconductor MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 17 MRF6S18060MR1 MRF6S18060MBR1 18 RF Device Data Freescale Semiconductor MRF6S18060MR1 MRF6S18060MBR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF6S18060MR1 MRF6S18060MBR1 Document Number: MRF6S18060 Rev. 2, 5/2006 20 RF Device Data Freescale Semiconductor