Freescale Semiconductor Technical Data Document Number: MRF1570T1 Rev. 6, 5/2006 Replaced by MRF1570NT1/FNT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. MRF1570T1 MRF1570FT1 RF Power Field Effect Transistors Designed for broadband commercial and industrial applications with frequencies up to 470 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common source amplifier applications in 12.5 volt mobile FM equipment. • Specified Performance @ 470 MHz, 12.5 Volts Output Power — 70 Watts Power Gain — 10 dB Efficiency — 50% • Capable of Handling 20:1 VSWR, @ 15.6 Vdc, 470 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Broadband - Full Power Across the Band: 135 - 175 MHz 400 - 470 MHz • Broadband Demonstration Amplifier Information Available Upon Request • 200_C Capable Plastic Package • Available in Tape and Reel. T1 Suffix = 500 Units per 44 mm, 13 inch Reel. 470 MHz, 70 W, 12.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1366 - 04, STYLE 1 TO - 272 - 8 WRAP PLASTIC MRF1570T1 CASE 1366A - 02, STYLE 1 TO - 272 - 8 PLASTIC MRF1570FT1 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS +0.5, +40 Vdc Gate - Source Voltage VGS ± 20 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 165 0.5 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 0.75 °C/W Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions ARCHIVE INFORMATION ARCHIVE INFORMATION N - Channel Enhancement - Mode Lateral MOSFETs Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating Package Peak Temperature Unit 1 260 °C NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF1570T1 MRF1570FT1 1 Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit IDSS — — 1 μA Gate Threshold Voltage (VDS = 12.5 Vdc, ID = 0.8 mAdc) VGS(th) 1.0 — 3 Vdc Drain- Source On - Voltage (VGS = 10 Vdc, ID = 2.0 Adc) VDS(on) — — 1 Vdc Input Capacitance (Includes Input Matching Capacitance) (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Ciss — — 500 pF Output Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Coss — — 250 pF Reverse Transfer Capacitance (VDS = 12.5 Vdc, VGS = 0 V, f = 1 MHz) Crss — — 35 pF 10 — — 50 — — Off Characteristics Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) On Characteristics RF Characteristics (In Freescale Test Fixture) Common - Source Amplifier Power Gain (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz Drain Efficiency (VDD = 12.5 Vdc, Pout = 70 W, IDQ = 800 mA) f = 470 MHz Gps η dB % ARCHIVE INFORMATION ARCHIVE INFORMATION Dynamic Characteristics MRF1570T1 MRF1570FT1 2 RF Device Data Freescale Semiconductor C14 C13 C12 B3 + C11 C10 C38 R1 Z2 RF INPUT C1 Z1 C2 L1 Z4 C4 L3 Z6 C6 R3 Z8 C8 B4 C37 C36 Z12 L9 Z14 Z16 C20 C22 C24 Z10 L5 C35 L7 C26 C23 C25 Z13 Z15 Z17 C27 Z21 R4 L2 Z5 ARCHIVE INFORMATION C5 L4 Z7 B2 C19 C18 C17 Z11 C9 C7 VGG Z9 + C16 Z18 Z20 C21 L6 L8 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C32, C37, C43 270 pF, 100 mil Chip Capacitors C2, C20, C21 33 pF, 100 mil Chip Capacitors C3 18 pF, 100 mil Chip Capacitor C4, C5 30 pF, 100 mil Chip Capacitors C6, C7 180 pF, 100 mil Chip Capacitors C8, C9 150 pF, 100 mil Chip Capacitors C10, C15 300 pF, 100 mil Chip Capacitors C11, C16, C33, C39 10 μF, 50 V Electrolytic Capacitors C12, C17, C34, C40 0.1 μF, 100 mil Chip Capacitors C13, C18, C35, C41 1000 pF, 100 mil Chip Capacitors C14, C19, C36, C42 470 pF, 100 mil Chip Capacitors C22, C23 110 pF, 100 mil Chip Capacitors C24, C25 68 pF, 100 mil Chip Capacitors C26, C27 120 pF, 100 mil Chip Capacitors C28, C29 24 pF, 100 mil Chip Capacitors C30, C31 27 pF, 100 mil Chip Capacitors C38, C44 240 pF, 100 mil Chip Capacitors L1, L2 17.5 nH, 6 Turn Inductors, Coilcraft C44 C43 L3, L4 L5, L6, L7, L8 L9, L10 N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9, Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20, Z21 Z22 Board B6 C42 C41 C32 C31 B5 C15 Z22 C30 RF OUTPUT Z19 C29 L10 R2 + VDD C33 C28 DUT C3 Z3 C34 C40 + VDD C39 5 nH, 2 Turn Inductors, Coilcraft 1 Turn, #18 AWG, 0.33″ ID Inductors 3 Turn, #16 AWG, 0.165″ ID Inductors Type N Flange Mounts 25.5 Ω Chip Resistors (1206) 9.3 Ω Chip Resistors (1206) 0.32″ x 0.080″ Microstrip 0.46″ x 0.080″ Microstrip 0.34″ x 0.080″ Microstrip 0.45″ x 0.080″ Microstrip 0.28″ x 0.240″ Microstrip 0.39″ x 0.080″ Microstrip 0.27″ x 0.080″ Microstrip 0.25″ x 0.080″ Microstrip 0.29″ x 0.080″ Microstrip 0.14″ x 0.080″ Microstrip 0.32″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 1. 135 - 175 MHz Broadband Test Circuit Schematic ARCHIVE INFORMATION B1 VGG MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 3 VDD VGG C11 B3 B4 B1 C12 C13 C14 C1 C2 C3 C6 C10 L1 C4 R1 L3 L4 C5 L2 C7 C17 C18 C19 R2 C15 C20 C24 C8 R3 R4 C9 L9 C28 C36 C35 C34 L7 C30 C26 C22 C23 C27 L10 C21 C25 C44 L5 L6 C31 L8 C32 C29 C42 C41 C40 C43 B5 B6 B2 ARCHIVE INFORMATION GND C37 C38 C16 ARCHIVE INFORMATION GND C33 C39 MRF1570T1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 135 - 175 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 135 - 175 MHz 0 80 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 100 135 MHz 60 175 MHz 40 150 MHz 20 0 1 2 3 4 5 135 MHz −10 175 MHz 155 MHz −15 VDD = 12.5 Vdc VDD = 12.5 Vdc 0 −5 6 −20 10 20 30 40 50 60 70 80 90 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 3. Output Power versus Input Power Figure 4. Input Return Loss versus Output Power MRF1570T1 MRF1570FT1 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS, 135 - 175 MHz 18 70 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 155 MHz VDD = 12.5 Vdc 155 MHz 17 175 MHz 135 MHz 16 15 14 175 MHz 50 135 MHz 40 30 20 30 40 50 60 70 80 20 10 90 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 5. Gain versus Output Power Figure 6. Drain Efficiency versus Output Power η, DRAIN EFFICIENCY (%) 100 Pout , OUTPUT POWER (WATTS) 90 135 MHz 80 175 MHz 155 MHz 70 60 VDD = 12.5 Vdc Pin = 36 dBm 50 400 600 800 1000 1200 1400 80 155 MHz 60 175 MHz 135 MHz 40 20 VDD = 12.5 Vdc Pin = 36 dBm 0 400 1600 600 800 1000 1200 1400 1600 IDQ, BIASING CURRENT (mA) IDQ, BIASING CURRENT (mA) Figure 7. Output Power versus Biasing Current Figure 8. Drain Efficiency versus Biasing Current 100 80 η, DRAIN EFFICIENCY (%) 100 135 MHz 175 MHz 155 MHz 60 40 20 Pin = 36 dBm IDQ = 800 mA 0 10 11 12 13 14 15 155 MHz 80 175 MHz 135 MHz 60 ARCHIVE INFORMATION VDD = 12.5 Vdc 12 10 Pout , OUTPUT POWER (WATTS) ARCHIVE INFORMATION 13 60 40 20 0 Pin = 36 dBm IDQ = 800 mA 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) VDD, SUPPLY VOLTAGE (VOLTS) Figure 9. Output Power versus Supply Voltage Figure 10. Drain Efficiency versus Supply Voltage MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 5 B1 VGG C14 C13 + C12 B3 C11 C10 C9 R1 Z3 RF INPUT C1 Z1 C2 R3 C36 C35 C34 + VDD C33 L3 Z17 L5 Z5 Z7 C7 C5 Z2 B4 C37 Z9 Z11 C21 DUT Z13 C23 Z15 L1 C25 C27 Z19 C3 C22 C4 C24 C31 C29 RF OUTPUT C32 R4 Z6 B2 VGG C20 C19 C18 + C17 C6 R2 Z8 Z10 Z12 C8 Z14 Z16 L2 C26 L6 L4 C28 B5 C16 C15 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C9, C15, C32 270 pF, 100 mil Chip Capacitors C2, C3 7.5 pF, 100 mil Chip Capacitors C4 5.1 pF, 100 mil Chip Capacitor C5, C6 180 pF, 100 mil Chip Capacitors C7, C8 47 pF, 100 mil Chip Capacitors C10, C16, C37, C42 120 pF, 100 mil Chip Capacitors C11, C17, C33, C38 10 μF, 50 V Electrolytic Capacitors C12, C18, C34, C39 470 pF, 100 mil Chip Capacitors C13, C19, C35, C40 1200 pF, 100 mil Chip Capacitors C14, C20, C36, C41 0.1 μF, 100 mil Chip Capacitors C21, C22 33 pF, 100 mil Chip Capacitors C23, C24 27 pF, 100 mil Chip Capacitors C25, C26 15 pF, 100 mil Chip Capacitors C27, C28 2.2 pF, 100 mil Chip Capacitors C29, C30 6.2 pF, 100 mil Chip Capacitors C31 1.0 pF, 100 mil Chip Capacitor C42 L1, L2, L3, L4 L5, L6 N1, N2 R1, R2 R3, R4 Z1 Z2 Z3, Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 Z15, Z16 Z17, Z18 Z19 Board B6 C41 Z18 C40 C39 C30 + VDD C38 1 Turn, #18 AWG, 0.085″ ID Inductors 2 Turn, #16 AWG, 0.165″ ID Inductors Type N Flange Mounts 25.5 Ω Chip Resistors (1206) 10 Ω Chip Resistors (1206) 0.240″ x 0.080″ Microstrip 0.185″ x 0.080″ Microstrip 1.500″ x 0.080″ Microstrip 0.150″ x 0.240″ Microstrip 0.140″ x 0.240″ Microstrip 0.140″ x 0.240″ Microstrip 0.150″ x 0.240″ Microstrip 0.270″ x 0.080″ Microstrip 0.680″ x 0.080″ Microstrip 0.320″ x 0.080″ Microstrip 0.380″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 11. 400 - 470 MHz Broadband Test Circuit Schematic ARCHIVE INFORMATION ARCHIVE INFORMATION Z4 MRF1570T1 MRF1570FT1 6 RF Device Data Freescale Semiconductor VDD VGG C11 GND B3 B4 C10 B1 C33 GND C37 C12 C13 C14 C1 C9 C5 R1 C2 C4 C3 R2 C6 C7 R3 R4 C8 C21 C23 C22 C24 L5 L1 C25 C26 C31 L2 L6 C15 C18 C19 C20 C27 C34 C35 C36 L3 C29 L4 C32 C30 C28 C39 C40 C41 B5 B6 C16 ARCHIVE INFORMATION B2 C17 C38 MRF1570T1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 12. 400 - 470 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 400 - 470 MHz 0 IRL, INPUT RETURN LOSS (dB) 100 Pout , OUTPUT POWER (WATTS) ARCHIVE INFORMATION C42 80 400 MHz 60 440 MHz 470 MHz 40 20 VDD = 12.5 Vdc −5 −10 440 MHz −15 400 MHz VDD = 12.5 Vdc 0 0 1 2 3 4 5 6 7 8 −20 470 MHz 0 10 20 30 40 50 60 70 80 Pin, INPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 13. Output Power versus Input Power Figure 14. Input Return Loss versus Output Power MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS, 400 - 470 MHz 70 15 60 440 MHz 13 470 MHz 11 9 7 ARCHIVE INFORMATION 0 10 20 30 40 50 60 400 MHz 50 40 30 20 0 80 70 VDD = 12.5 Vdc 0 10 20 Pout, OUTPUT POWER (WATTS) 30 40 50 60 70 80 Pout, OUTPUT POWER (WATTS) Figure 15. Gain versus Output Power Figure 16. Drain Efficiency versus Output Power 80 470 MHz η, DRAIN EFFICIENCY (%) 100 Pout , OUTPUT POWER (WATTS) 90 440 MHz 400 MHz 70 60 VDD = 12.5 Vdc Pin = 38 dBm 50 400 600 800 1000 1200 1400 80 470 MHz 400 MHz 60 440 MHz 40 20 VDD = 12.5 Vdc Pin = 38 dBm 0 400 1600 600 800 IDQ, BIASING CURRENT (mA) 1000 1200 1400 1600 IDQ, BIASING CURRENT (mA) Figure 17. Output Power versus Biasing Current Figure 18. Drain Efficiency versus Biasing Current 100 100 400 MHz 90 η, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 440 MHz 10 VDD = 12.5 Vdc 5 470 MHz 470 MHz 80 440 MHz 70 60 Pin = 38 dBm IDQ = 800 mA 50 40 10 11 12 13 14 80 400 MHz 60 440 MHz VDD, SUPPLY VOLTAGE (VOLTS) Figure 19. Output Power versus Supply Voltage 470 MHz 40 Pin = 38 dBm IDQ = 800 mA 20 15 ARCHIVE INFORMATION 400 MHz η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 17 0 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 20. Drain Efficiency versus Supply Voltage MRF1570T1 MRF1570FT1 8 RF Device Data Freescale Semiconductor B1 C13 C12 C11 + B3 C10 C9 C8 R1 Z2 RF INPUT Z4 R3 Z6 Z8 Z10 C6 C4 Z1 C31 C30 + VDD C29 Z14 Z16 L1 Z18 C24 C22 Z20 Z3 Z5 C21 Z7 C3 ARCHIVE INFORMATION Z12 C20 DUT R4 B2 VGG C19 C32 L3 C2 C1 B4 C33 C18 C17 + C16 C5 R2 Z9 Z11 C23 Z13 C7 C28 Z15 Z17 L2 Z19 C25 L4 C27 B5 C15 C14 B1, B2, B3, B4, B5, B6 Long Ferrite Beads, Fair Rite Products C1, C8, C14, C28 270 pF, 100 mil Chip Capacitors C2, C3 10 pF, 100 mil Chip Capacitors C4, C5 180 pF, 100 mil Chip Capacitors C6, C7 47 pF, 100 mil Chip Capacitors C9, C15, C33, C38 120 pF, 100 mil Chip Capacitors C10, C16, C29, C34 10 μF, 50 V Electrolytic Capacitors C11, C17, C30, C35 470 pF, 100 mil Chip Capacitors C12, C18, C31, C36 1200 pF, 100 mil Chip Capacitors C13, C19, C32, C37 0.1 μF, 100 mil Chip Capacitors C20, C21 22 pF, 100 mil Chip Capacitors C22, C23 20 pF, 100 mil Chip Capacitors C24, C25, C26, C27 5.1 pF, 100 mil Chip Capacitors L1, L2 1 Turn, #18 AWG, 0.115″ ID Inductors L3, L4 2 Turn, #16 AWG, 0.165″ ID Inductors C38 B6 N1, N2 R1, R2 R3, R4 Z1 Z2, Z3 Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11 Z12, Z13 Z14, Z15 Z16, Z17 Z18, Z19 Z20 Board C26 RF OUTPUT C37 C36 C35 + VDD C34 Type N Flange Mounts 1.0 kΩ Chip Resistors (1206) 10 Ω Chip Resistors (1206) 0.40″ x 0.080″ Microstrip 0.26″ x 0.080″ Microstrip 1.35″ x 0.080″ Microstrip 0.17″ x 0.240″ Microstrip 0.12″ x 0.240″ Microstrip 0.14″ x 0.240″ Microstrip 0.15″ x 0.240″ Microstrip 0.18″ x 0.172″ Microstrip 1.23″ x 0.080″ Microstrip 0.12″ x 0.080″ Microstrip 0.40″ x 0.080″ Microstrip 31 mil Glass Teflon® Figure 21. 450 - 520 MHz Broadband Test Circuit Schematic ARCHIVE INFORMATION VGG MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 9 VDD VGG C10 B1 C9 C13 C12 C11 C8 C2 C1 C3 C14 C4 R1 R2 C5 ARCHIVE INFORMATION C19 C18 C17 GND C33 C30 C31 C32 C6 R3 R4 C7 L1 C24 C20 C22 L3 C26 C28 C21 C23 L4 C27 C25 L2 C35 C36 C37 C15 C38 ARCHIVE INFORMATION GND C29 B3 B4 B5 B6 B2 C16 C34 MRF1570T1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 22. 450 - 520 MHz Broadband Test Circuit Component Layout TYPICAL CHARACTERISTICS, 450 - 520 MHz 0 80 IRL, INPUT RETURN LOSS (dB) Pout , OUTPUT POWER (WATTS) 100 470 MHz 60 450 MHz 40 520 MHz 500 MHz 20 −5 −10 470 MHz 500 MHz −15 450 MHz 520 MHz −20 VDD = 12.5 Vdc VDD = 12.5 Vdc 0 0 1 2 3 4 5 6 7 Pin, INPUT POWER (WATTS) Figure 23. Output Power versus Input Power 8 −25 0 10 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) Figure 24. Input Return Loss versus Output Power MRF1570T1 MRF1570FT1 10 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS, 450 - 520 MHz 70 450 MHz 14 13 η, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) 470 MHz 500 MHz 520 MHz 12 11 10 450 MHz 50 470 MHz 40 30 VDD = 12.5 Vdc VDD = 12.5 Vdc 0 10 20 30 40 50 60 70 80 20 10 90 20 30 40 50 60 70 80 90 Pout, OUTPUT POWER (WATTS) Figure 25. Gain versus Output Power Figure 26. Drain Efficiency versus Output Power 80 80 η, DRAIN EFFICIENCY (%) 90 450 MHz 470 MHz 500 MHz 70 520 MHz 60 800 1200 70 520 MHz 500 MHz 60 470 MHz 50 450 MHz VDD = 12.5 Vdc Pin = 38 dBm VDD = 12.5 Vdc Pin = 38 dBm 50 400 1600 40 400 800 IDQ, BIASING CURRENT (mA) 1200 1600 IDQ, BIASING CURRENT (mA) Figure 27. Output Power versus Biasing Current Figure 28. Drain Efficiency versus Biasing Current 80 100 90 η, DRAIN EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 520 MHz 500 MHz Pout, OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) ARCHIVE INFORMATION 9 60 80 70 450 MHz 470 MHz 500 MHz 520 MHz 60 50 70 520 MHz 60 500 MHz 470 MHz 450 MHz 50 Pin = 38 dBm IDQ = 800 mA 40 30 10 11 12 13 14 ARCHIVE INFORMATION 15 Pin = 38 dBm IDQ = 800 mA 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 29. Output Power versus Supply Voltage 40 10 11 12 13 14 15 VDD, SUPPLY VOLTAGE (VOLTS) Figure 30. Drain Efficiency versus Supply Voltage MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 11 ZOL* f = 135 MHz f = 175 MHz f = 135 MHz Zin f = 175 MHz Zo = 5 Ω f = 400 MHz f = 470 MHz Zo = 5 Ω Zin f = 520 MHz ZOL* f = 400 MHz f = 450 MHz f = 450 MHz ZOL* Zin f = 470 MHz VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W VDD = 12.5 V, IDQ = 0.8 A, Pout = 70 W f MHz Zin Ω ZOL* Ω f MHz Zin Ω ZOL* Ω f MHz Zin Ω ZOL* Ω 135 2.8 +j0.05 0.65 +j0.42 400 0.92 - j0.71 1.05 - j1.10 450 0.94 - j1.12 0.61 - j1.14 155 3.9 +j0.34 1.01 +j0.63 440 1.12 - j1.11 0.83 - j1.45 470 1.03 - j1.17 0.62 - j1.12 175 2.4 - j0.47 0.71 +j0.37 470 0.82 - j0.79 0.59 - j1.43 500 0.95 - j1.71 0.75 - j1.03 520 0.62 - j1.74 0.77 - j0.97 Zin = Complex conjugate of source impedance. ZOL* = Complex conjugate of the load impedance at given output power, voltage, frequency, and ηD > 50 %. Notes: Impedance Zin was measured with input terminated at 50 W. Impedance ZOL was measured with output terminated at 50 W. Input Matching Network Output Matching Network Device Under Test Z in ARCHIVE INFORMATION ARCHIVE INFORMATION f = 520 MHz Z * OL Figure 31. Series Equivalent Input and Output Impedance MRF1570T1 MRF1570FT1 12 RF Device Data Freescale Semiconductor DESIGN CONSIDERATIONS This device is a common - source, RF power, N - Channel enhancement mode, Lateral Metal - Oxide Semiconductor Field - Effect Transistor (MOSFET). Freescale Application Note AN211A, “FETs in Theory and Practice”, is suggested reading for those not familiar with the construction and characteristics of FETs. This surface mount packaged device was designed primarily for VHF and UHF mobile power amplifier applications. Manufacturability is improved by utilizing the tape and reel capability for fully automated pick and placement of parts. However, care should be taken in the design process to insure proper heat sinking of the device. The major advantages of Lateral RF power MOSFETs include high gain, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. MOSFET CAPACITANCES The physical structure of a MOSFET results in capacitors between all three terminals. The metal oxide gate structure determines the capacitors from gate - to - drain (Cgd), and gate - to - source (Cgs). The PN junction formed during fabrication of the RF MOSFET results in a junction capacitance from drain - to - source (Cds). These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter - terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways: 1. Drain shorted to source and positive voltage at the gate. 2. Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case, the numbers are lower. However, neither method represents the actual operating conditions in RF applications. Drain Cgd Gate Cds Ciss = Cgd + Cgs Coss = Cgd + Cds Crss = Cgd Cgs Source DRAIN CHARACTERISTICS One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance, RDS(on), occurs in the linear region of the output characteristic and is specified at a specific gate - source voltage and drain current. The drain - source voltage under these conditions is termed VDS(on). For MOSFETs, VDS(on) has a positive temperature coefficient at high temperatures because it contributes to the power dissipation within the device. BVDSS values for this device are higher than normally required for typical applications. Measurement of BVDSS is not recommended and may result in possible damage to the device. GATE CHARACTERISTICS The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The DC input resistance is very high - on the order of 109 Ω — resulting in a leakage current of a few nanoamperes. Gate control is achieved by applying a positive voltage to the gate greater than the gate - to - source threshold voltage, VGS(th). Gate Voltage Rating — Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region. Gate Termination — The gates of these devices are essentially capacitors. Circuits that leave the gate open - circuited or floating should be avoided. These conditions can result in turn - on of the devices due to voltage build - up on the input capacitor due to leakage currents or pickup. Gate Protection — These devices do not have an internal monolithic zener diode from gate - to - source. If gate protection is required, an external zener diode is recommended. Using a resistor to keep the gate - to - source impedance low also helps dampen transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate - drain capacitance. If the gate - to - source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate - threshold voltage and turn the device on. DC BIAS Since this device is an enhancement mode FET, drain current flows only when the gate is at a higher potential than the source. RF power FETs operate optimally with a quiescent drain current (IDQ), whose value is application dependent. This device was characterized at IDQ = 800 mA, which is the suggested value of bias current for typical applications. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters. The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system. GAIN CONTROL Power output of this device may be controlled to some degree with a low power dc control signal applied to the gate, thus facilitating applications such as manual gain control, ALC/AGC and modulation systems. This characteristic is very dependent on frequency and load line. ARCHIVE INFORMATION ARCHIVE INFORMATION APPLICATIONS INFORMATION MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 13 first pass approximation. Since RF power MOSFETs are triode devices, they are not unilateral. This coupled with the very high gain of this device yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The RF test fixture implements a parallel resistor and capacitor in series with the gate, and has a load line selected for a higher efficiency, lower gain, and more stable operating region. See Freescale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. ARCHIVE INFORMATION ARCHIVE INFORMATION MOUNTING The specified maximum thermal resistance of 0.75°C/W assumes a majority of the 0.170″ x 0.608″ source contact on the back side of the package is in good contact with an appropriate heat sink. As with all RF power devices, the goal of the thermal design should be to minimize the temperature at the back side of the package. AMPLIFIER DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, “Impedance Matching Networks Applied to RF Power Transistors.” Large - signal impedances are provided, and will yield a good MRF1570T1 MRF1570FT1 14 RF Device Data Freescale Semiconductor NOTES MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 15 NOTES MRF1570T1 MRF1570FT1 16 RF Device Data Freescale Semiconductor NOTES MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 17 PACKAGE DIMENSIONS 2X aaa M 4X P D A B b2 aaa M B E1 A 5 1 6 2 E2 ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ 8 (b1) D B 7 2X b3 D D1 D2 4X 4X b1 aaa M 7 3 8 4 e 4X 6 e1 5 D B C SEATING PLANE Y D SEATING PLANE A1 L q A2 DATUM PLANE H c1 4 3 bbb C A B 2 1 NOTES: 1. CONTROLLING DIMENSION: INCH . 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.006 PER SIDE. DIMENSION D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 5. DIMENSIONS b1 AND b2 DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS OF THE b1 AND b2 DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 6. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. A E3 NOTE 6 E3 VIEW Y - Y E Y DRAIN ID STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) CASE 1366 - 04 ISSUE D TO - 272- 8 WRAP PLASTIC MRF1570T1 DIM A A1 A2 D D1 D2 E E1 E2 E3 L P b1 b2 b3 c1 e e1 q aaa bbb INCHES MIN MAX 0.098 0.108 0.000 0.004 0.100 0.104 0.928 0.932 0.810 BSC 0.608 BSC 0.296 0.304 0.248 0.252 0.170 BSC 0.241 0.245 0.060 0.070 0.126 0.134 0.088 0.094 0.066 0.072 0.067 0.073 0.007 0.011 0.104 BSC 0.210 BSC 0_ 6_ 0.004 0.008 MILLIMETERS MIN MAX 2.49 2.74 0.00 0.10 2.54 2.64 23.57 23.67 20.57 BSC 15.44 BSC 7.52 7.72 6.30 6.40 4.32 BSC 6.12 6.22 1.52 1.78 3.20 3.40 2.24 2.39 1.68 1.83 1.70 1.85 0.178 0.279 2.64 BSC 5.33 BSC 0_ 6_ 0.10 0.20 MRF1570T1 MRF1570FT1 18 RF Device Data Freescale Semiconductor 2X aaa M P D A B E1 A B aaa 3X 5 1 b2 aaa M D B 4X 6 2 D1 D B M b 8 3X e2 E2 2X b3 (b1) 7 D D2 4X e 4X 7 e1 3 6 4X aaa b1 D B M 4 8 5 b4 bbb C A B 4X ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ DRAIN ID NOTE 5 4 3 2 1 VIEW Y - Y E c1 A D SEATING PLANE F Y STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8. ZONE "J" SOURCE (COMMON) DRAIN DRAIN SOURCE (COMMON) SOURCE (COMMON) GATE GATE SOURCE (COMMON) Y A1 6 A2 NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE −H−. 4. DIMENSIONS "b" AND "b1" DO NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.005 TOTAL IN EXCESS OF THE "b1" AND "b2" DIMENSIONS AT MAXIMUM MATERIAL CONDITION. 5. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. 6. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. DIM A A1 A2 D D1 D2 E E1 E2 F P b b1 b2 b3 b4 c1 e e1 e2 aaa bbb INCHES MIN MAX 0.098 0.106 0.038 0.044 0.040 0.042 0.926 0.934 0.810 BSC 0.608 BSC 0.492 0.500 0.246 0.254 0.170 BSC 0.025 BSC 0.126 0.134 0.105 0.111 0.088 0.094 0.066 0.072 0.067 0.073 0.077 0.083 0.007 0.011 0.104 BSC 0.210 BSC 0.229 BSC 0.004 0.008 MILLIMETERS MIN MAX 2.49 2.69 0.96 1.12 1.02 1.07 23.52 23.72 20.57 BSC 15.44 BSC 12.50 12.70 6.25 6.45 4.32 BSC 0.64 BSC 3.20 3.40 2.67 2.82 2.24 2.39 1.68 1.83 1.70 1.85 1.96 2.11 0.178 0.279 2.64 BSC 5.33 BSC 5.82 BSC 0.10 0.20 CASE 1366A - 02 ISSUE C TO - 272- 8 PLASTIC MRF1570FT1 MRF1570T1 MRF1570FT1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1 - 8 - 1, Shimo - Meguro, Meguro - ku, Tokyo 153 - 0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center 2 Dai King Street Tai Po Industrial Estate Tai Po, N.T., Hong Kong +800 2666 8080 [email protected] For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 [email protected] Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. RoHS-compliant and/or Pb-free versions of Freescale products have the functionality and electrical characteristics of their non-RoHS-compliant and/or non-Pb-free counterparts. For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program, go to http://www.freescale.com/epp. MRF1570T1 MRF1570FT1 Document Number: MRF1570T1 Rev. 6, 5/2006 20 RF Device Data Freescale Semiconductor