MICROCHIP 27C512A

27C512A
512K (64K x 8) CMOS EPROM
PACKAGE TYPES
TSOP
27C512A
A complete family of packages is offered to provide the
most flexibility in applications. For surface mount applications, PLCC, VSOP, TSOP or SOIC packaging is
available. Tape or reel packaging is also available for
PLCC or SOIC packages.
A10
CE
D7
D6
D5
D4
D3
21
20
19
18
17
16
15
VSS
D2
D1
D0
A0
A1
A2
30
1
31
2
32
4
29
6
28
7
27
27C512A
5
8
9
10
11
12
26
25
24
23
22
13
A8
A9
A11
NC
OE/VPP
A10
CE
O7
O6
20
19
21
15
A6
A5
A4
A3
A2
A1
A0
NC
O0
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
O0
O1
O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
27C512A
DIP/SOIC
DESCRIPTION
The Microchip Technology Inc. 27C512A is a CMOS
512K bit electrically Programmable Read Only Memory
(EPROM). The device is organized into 64K words by
8 bits (64K bytes). Accessing individual bytes from an
address transition or from power-up (chip enable pin
going low) is accomplished in less than 90 ns. This
very high speed device allows the most sophisticated
microprocessors to run at full speed without the need
for WAIT states. CMOS design and processing enables
this part to be used in systems where reduced power
consumption and high reliability are requirements.
28
27
26
25
24
23
22
A7
A12
A15
NU
Vcc
A14
A13
PLCC
18
8
9
10
11
12
13
14
17
A15
A12
A7
A6
A5
A4
A3
16
1
2
3
4
5
6
7
3
OE/VPP
A11
A9
A8
A13
A14
VCC
14
• High speed performance
• CMOS Technology for low power consumption
- 25 mA Active current
- 30 µA Standby current
• Factory programming available
• Auto-insertion-compatible plastic packages
• Auto ID aids automated programming
• High speed express programming algorithm
• Organized 64K x 8: JEDEC standard pinouts
- 28-pin Dual-in-line package
- 32-pin PLCC Package
- 28-pin SOIC package
- 28-pin TSOP package
- 28-pin VSOP package
- Tape and reel
• Data Retention > 200 years
• Available for the following temperature ranges
- Commercial:
0˚C to +70˚C
- Industrial:
-40˚C to +85˚C
- Automotive:
-40˚C to +125˚C
O1
O2
VSS
NU
O3
O4
O5
FEATURES
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
A14
A13
A8
A9
A11
OE/VPP
A10
CE
O7
O6
O5
O4
O3
VSOP
OE/VPP
A11
A9
A8
A13
A14
VCC
A15
A12
A7
A6
A5
A4
A3
22
23
24
25
26
27
28
1
2
3
4
5
6
7
 1996 Microchip Technology Inc.
27C512A
21
20
19
18
17
16
15
14
13
12
11
10
9
8
A10
CE
O7
O6
O5
O4
O3
VSS
O2
O1
O0
A0
A1
A2
DS11173E-page 1
This document was created with FrameMaker 4 0 4
27C512A
1.0
ELECTRICAL CHARACTERISTICS
1.1
Maximum Ratings*
TABLE 1-1:
PIN FUNCTION TABLE
Name
Function
VCC and input voltages w.r.t. VSS ........ -0.6V to +7.25V
A0-A15
VPP voltage w.r.t. VSS during
programming ......................................... -0.6V to +14V
CE
Address Inputs
Chip Enable
OE/VPP
Output Enable/Programming Voltage
Output voltage w.r.t. VSS ............... -0.6V to VCC +1.0V
O0 - O7
Data Output
Storage temperature .......................... -65˚C to +150˚C
VCC
+5V Power Supply
Ambient temp. with power applied ..... -65˚C to +125˚C
VSS
Ground
*Notice: Stresses above those listed under “Maximum Ratings”
may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any
other conditions above those indicated in the operation listings of
this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
NC
No Connection; No Internal Connection
NU
Not Used; No External Connection is
Allowed
Voltage on A9 w.r.t. VSS ...................... -0.6V to +13.5V
TABLE 1-2:
READ OPERATION DC CHARACTERISTICS
VCC = +5V ±10%
Commercial:
Industrial:
Extended (Automotive):
Parameter
Tamb = 0˚C to +70˚C
Tamb = -40˚C to +85˚C
Tamb = -40˚C to +125˚C
Part*
Status
Symbol
Min
Max
Units
Conditions
Input Voltages
all
Logic "1"
Logic "0"
VIH
VIL
2.0
-0.5
VCC+1
0.8
V
V
Input Leakage
all
ILI
-10
10
µA
VIN = 0 to VCC
Output Voltages
all
Logic "1"
Logic "0"
VOH
VOL
2.4
0.45
V
V
IOH = - 400 µA
IOL = 2.1 mA
Output Leakage
all
—
ILO
-10
10
µA
VOUT = 0V to VCC
Input Capacitance
all
—
CIN
—
6
pF
VIN = 0V; Tamb = 25°C;
f = 1 MHz
Output Capacitance
all
—
COUT
—
12
pF
VOUT = 0V; Tamb = 25°C;
f = 1 MHz
Power Supply Current,
Active
C
I, E
TTL input
TTL input
ICC
ICC
—
—
25
35
mA
mA
VCC = 5.5V
f = 1 MHz;
OE/VPP = CE = VIL;
IOUT = 0 mA;
VIL = -0.1 to 0.8V;
VIH = 2.0 to VCC;
Note 1
Power Supply Current,
Standby
C
I, E
all
—
—
—
1
2
30
mA
mA
µA
ICC(S)TLL
TTL input
TTL input
ICC(S)TLL
CMOS input ICC(S)CMOS
CE = Vcc±0.2V
* Parts: C=Commercial Temperature Range; I, E=Industrial and Extended Temperature Ranges
Note 1: Typical active current increases .75 mA per MHz up to operating frequency for all temperature ranges.
DS11173E-page 2
 1996 Microchip Technology Inc.
27C512A
TABLE 1-3:
READ OPERATION AC CHARACTERISTICS
AC Testing Waveform:
Output Load:
Input Rise and Fall Times:
Ambient Temperature:
Parameter
VIH = 2.4V and VIL = .45V;
1 TTL Load + 100 pF
10 ns
Commercial:
Industrial:
Extended (Automotive):
VOH = 2.0V and VOL = 0.8V
Tamb = 0˚C to +70˚C
Tamb = -40˚C to +85˚C
Tamb = -40˚C to +125˚C
27C512-90*
27C512-10*
27C512-12
27C512-15
Min
Max
Min
Max
Min
Max
Min
Max
Sym
Units Conditions
Address to Output
Delay
tACC
—
90
—
100
—
120
—
150
ns
CE = OE/
VPP = VIL
CE to Output Delay
tCE
—
90
—
100
—
120
—
150
ns
OE/VPP =
VIL
OE to Output Delay
tOE
—
40
—
40
—
50
—
60
ns
CE = VIL
OE to Output High
Impedance
tOFF
0
35
0
35
0
40
0
45
ns
Output Hold from
Address, CE or OE/
VPP, whichever
occurred first
tOH
0
—
0
—
0
—
0
—
ns
*90/10 AC Testing Waveforms: VIH = 3.0V and VIL = 0V; VOH = 1.5V and VOL = 1.5V
Output Load: 1 TTL Load + 30 pF
FIGURE 1-1:
READ WAVEFORMS
VIH
Address Valid
Address
VIL
VIH
CE
VIL
t CE(2)
VIH
OE
VIL
Outputs
O0 - O7
VOH
t OFF(1,3)
t OH
t OE(2)
High Z
Valid Output
High Z
VOL
t ACC
Notes: (1) tOFF is specified for OE or CE, whichever occurs first
(2) OE may be delayed up to t CE - t OE after the falling edge of CE without impact on tCE
(3) This parameter is sampled and is not 100% tested.
 1996 Microchip Technology Inc.
DS11173E-page 3
27C512A
TABLE 1-4:
PROGRAMMING DC CHARACTERISTICS
Ambient Temperature: Tamb = 25°C ± 5°C
VCC = 6.5V ± 0.25V, OE/VPP = VH = 13.0V ± 0.25V
Parameter
Status
Symbol
Min.
Max.
Units
Input Voltages
Logic “1”
Logic “0”
VIH
VIL
2.0
-0.1
VCC+1
0.8
V
V
Input Leakage
—
ILI
-10
10
µA
VIN = 0V to VCC
Logic “1”
Logic “0”
VOH
VOL
2.4
—
0.45
V
V
IOH = -400 µA
IOL = 2.1 mA
VCC Current, program & verify
—
ICC2
—
35
mA
OE/VPP Current, program
—
IPP2
—
25
mA
A9 Product Identification
—
VID
11.5
12.5
V
Output Voltages
Conditions (See Note 1)
CE = VIL
Note 1: VCC must be applied simultaneously or before VPP voltage on OE/VPP and removed simultaneously or after
the VPP voltage on OE/VPP.
TABLE 1-5:
PROGRAMMING AC CHARACTERISTICS
for Program, Program Verify
and Program Inhibit Modes
AC Testing Waveform: VIH=2.4V and VIL=0.45V; VOH=2.0V; VOL=0.8V
Ambient Temperature: 25°C ±5°C
VCC = 6.5V ± 0.25V, OE/VPP = VH = 13.0V ± 0.25 V
Parameter
Symbol
Min.
Max.
Units
Address Set-Up Time
tAS
2
—
µs
Data Set-Up Time
tDS
2
—
µs
Data Hold Time
tDH
2
—
µs
Address Hold Time
tAH
0
—
µs
Float Delay (2)
tDF
0
130
ns
VCC Set-Up Time
tVCS
2
—
µs
Program Pulse Width (1)
tPW
95
105
µs
CE Set-Up Time
tCES
2
—
µs
OE Set-Up Time
tOES
2
—
µs
OE Hold Time
tOEH
2
—
µs
OE Recovery Time
tOR
2
—
µs
OE /VPP Rise Time During Programming
tPRT
50
—
ns
Remarks
100 µs typical
Note 1: For express algorithm, initial programming width tolerance is 100 µs ±5%.
2: This parameter is only sampled and not 100% teted. Output float is defined as the point where data is no
longer driven (see timing diagram).
DS11173E-page 4
 1996 Microchip Technology Inc.
27C512A
FIGURE 1-2:
PROGRAMMING WAVEFORMS (1)
Program
Verify
VIH
Address Stable
Address VIL
t AH
t AS
VIH
Data In Stable
Data VIL
t DF
(2)
t DH
t DS
6.5 V (3)
Data Out Valid
VCC 5.0V
t CE
t VCS
VIH
CE VIL
t CES
(2)
t PW
t OES
t OEH
t OR
13.0 V (3)
OE/V PP
t OPW
VIL
t PRT
Notes:
(1) The input timing reference level is 0.8V for VIL and 2.0V for VIH.
(2) t DF and tOE are characteristics of the device but must be accommodated by the programmer.
(3) VCC = 6.5V ±0.25V, V PP = VH = 13.0V ±0.5V for express programming algorithm.
TABLE 1-6:
MODES
Operation Mode
CE
OE/VPP
A9
O0 - O7
Read
VIL
VIL
X
DOUT
Program
VIL
VH
X
DIN
Program Verify
VIL
VIL
X
DOUT
Program Inhibit
VIH
VH
X
High Z
Standby
VIH
X
X
High Z
Output Disable
VIL
VIH
X
High Z
Identity
VIL
VIL
VH
Identity Code
X = Don’t Care
1.2
Read Mode
(See Timing Diagrams and AC Characteristics)
Read Mode is accessed when
a)
b)
For Read operations, if the addresses are stable, the
address access time (tACC) is equal to the delay from
CE to output (tCE). Data is transferred to the output
after a delay (tOE) from the falling edge of OE/VPP.
the CE pin is low to power up (enable) the chip
the OE/VPP pin is low to gate the data to the
output pins
 1996 Microchip Technology Inc.
DS11173E-page 5
27C512A
1.3
Standby Mode
When this conditions are met, the supply current will
drop from 25 mA to 30 µA.
Since the erased state is “1” in the array, programming
of “0” is required. The address to be programmed is set
via pins A0 - A15 and the data to be programmed is presented to pins O0 - O7. When data and address are
stable, a low going pulse on the CE line programs that
location.
1.4
1.7
The standby mode is entered when the CE pin is high,
and the program mode is not identified.
Output Enable OE/VPP
This multifunction pin eliminates bus connection in multiple bus microprocessor systems and the outputs go to
high impedance when:
• the OE/VPP pin is high (VIH).
When a VH input is applied to this pin, it supplies the
programming voltage (VPP) to the device.
1.5
Erase Mode (UV Windowed Versions)
Windowed products offer the ability to erase the memory array. The memory matrix is erased to the all “1's”
state as a result of being exposed to ultraviolet light. To
ensure complete erasure, a dose of 15 watt-second/
cm2 is required. This means that the device window
must be placed within one inch and directly underneath
an ultraviolet lamp with a wavelength of 2537 Angstroms, intensity of 12,000 mW/cm2 for approximately
40 minutes.
1.6
Programming Mode
The Express algorithm must be used for best results. It
has been developed to improve programming yields
and throughput times in a production environment. Up
to 10 100-microsecond pulses are applied until the byte
is verified. A flowchart of the Express algorithm is
shown in Figure 1-3.
Programming takes place when:
a)
b)
c)
VCC is brought to the proper voltage,
OE/VPP is brought to the proper VH level, and
CE line is low.
Verify
After the array has been programmed it must be verified
to ensure all the bits have been correctly programmed.
This mode is entered when all the following conditions
are met:
a)
b)
c)
VCC is at the proper level,
the OE/VPP pin is low, and
the CE line is low.
1.8
Inhibit
When programming multiple devices in parallel with different data, only CE needs to be under separate control
to each device. By pulsing the CE line low on a particular device, that device will be programmed; all other
devices with CE held high will not be programmed with
the data (although address and data will be available on
their input pins).
1.9
Identity Mode
In this mode specific data is output which identifies the
manufacturer as Microchip Technology Inc. and the
device type. This mode is entered when Pin A9 is taken
to VH (11.5V to 12.5V). The CE and OE/VPP lines must
be at VIL. A0 is used to access any of the two non-erasable bytes whose data appears on O0 through O7.
Pin
Identity
Manufacturer
Device Type*
Input
Output
H
e
x
A0
0 O O O O O O O
7 6 5 4 3 2 1 0
VIL
VIH
0 0 1 0 1 0 0 1 29
1 0 0 0 1 1 0 0 0D
* Code subject to change
DS11173E-page 6
 1996 Microchip Technology Inc.
27C512A
FIGURE 1-3:
PROGRAMMING EXPRESS ALGORITHM
Conditions:
Tamb = 25˚C ±5˚C
VCC = 6.5 ±0.25V
VPP = 13.0 ±0.25V
Start
ADDR = First Location
VCC = 6.5V
VPP = 13.0V
X=0
Program one 100 µs pulse
Increment X
Verify
Byte
Pass
Fail
No
X = 10 ?
Last
Address?
Yes
Device
Failed
Yes
No
Increment Address
VCC = VPP = 4.5V, 5.5V
Device
Passed
 1996 Microchip Technology Inc.
Yes
All
bytes
= original
data?
No
Device
Failed
DS11173E-page 7
27C512A
NOTES:
DS11173E-page 8
 1996 Microchip Technology Inc.
27C512A
NOTES:
 1996 Microchip Technology Inc.
DS11173E-page 9
27C512A
NOTES:
DS11173E-page 10
 1996 Microchip Technology Inc.
27C512A
27C512A Product Identification System
To order or to obtain information (e.g., on pricing or delivery),, please use listed part numbers, and refer to factory or listed sales offices.
27C512A –
70
I
/P
Package:
Temperature
Range:
 1996 Microchip Technology Inc.
L
P
SO
TS
VS
=
=
=
=
=
Blank =
I =
E =
Access
Time:
90
10
12
15
Device:
27C512A
=
=
=
=
Plastic Leaded Chip Carrier
Plastic DIP (600 Mil)
Plastic SOIC (300 Mil)
Thin Small Outline Package(TSOP) 8x20mm
Very Small Outline Package(VSOP) 8x13.4mm
0˚C to +70˚C
-40˚C to +85˚C
-40˚C to +125˚C
90 ns
100 ns
120 ns
150 ns
512K (64K x 8) CMOS EPROM
DS11173E-page 11
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9/3/96
All rights reserved.  1996, Microchip Technology Incorporated, USA. 9/96
Printed on recycled paper.
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No representation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement
of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and
name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.
DS11173E-page 12
 1996 Microchip Technology Inc.